JP5271426B2 - フッ化炭素膜の表面処理 - Google Patents
フッ化炭素膜の表面処理 Download PDFInfo
- Publication number
- JP5271426B2 JP5271426B2 JP2011554343A JP2011554343A JP5271426B2 JP 5271426 B2 JP5271426 B2 JP 5271426B2 JP 2011554343 A JP2011554343 A JP 2011554343A JP 2011554343 A JP2011554343 A JP 2011554343A JP 5271426 B2 JP5271426 B2 JP 5271426B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- annealing
- layer
- cfx
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/412—Deposition of metallic or metal-silicide materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/44—Physical vapour deposition [PVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
- H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
- H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
- H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20575209P | 2009-01-22 | 2009-01-22 | |
| US61/205,752 | 2009-01-22 | ||
| US20797109P | 2009-02-17 | 2009-02-17 | |
| US61/207,971 | 2009-02-17 | ||
| PCT/JP2010/000347 WO2010084759A1 (en) | 2009-01-22 | 2010-01-22 | Surface treatment for a fluorocarbon film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012516065A JP2012516065A (ja) | 2012-07-12 |
| JP2012516065A5 JP2012516065A5 (https=) | 2012-11-29 |
| JP5271426B2 true JP5271426B2 (ja) | 2013-08-21 |
Family
ID=42355815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011554343A Expired - Fee Related JP5271426B2 (ja) | 2009-01-22 | 2010-01-22 | フッ化炭素膜の表面処理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8765605B2 (https=) |
| JP (1) | JP5271426B2 (https=) |
| KR (1) | KR101269925B1 (https=) |
| CN (1) | CN102292798A (https=) |
| TW (1) | TW201044462A (https=) |
| WO (1) | WO2010084759A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5710606B2 (ja) * | 2009-06-26 | 2015-04-30 | 東京エレクトロン株式会社 | アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善 |
| PL2683251T3 (pl) | 2011-03-11 | 2021-12-13 | Intercontinental Great Brands Llc | Sposób wytwarzania wielowarstwowych wyrobów cukierniczych |
| JP5912180B2 (ja) | 2011-07-21 | 2016-04-27 | インターコンチネンタル グレート ブランズ エルエルシー | チューインガムの形成および冷却のためのシステムおよび方法 |
| US8691709B2 (en) | 2011-09-24 | 2014-04-08 | Tokyo Electron Limited | Method of forming metal carbide barrier layers for fluorocarbon films |
| JP5807511B2 (ja) * | 2011-10-27 | 2015-11-10 | 東京エレクトロン株式会社 | 成膜装置及びその運用方法 |
| KR101319929B1 (ko) * | 2011-11-03 | 2013-10-18 | 주식회사 우신산업 | 차량용 사이드 리피터의 제조방법 |
| US9111939B2 (en) * | 2012-07-27 | 2015-08-18 | Intel Corporation | Metallization of fluorocarbon-based dielectric for interconnects |
| JP2014103165A (ja) * | 2012-11-16 | 2014-06-05 | Tokyo Electron Ltd | 半導体素子の製造方法、および半導体素子の製造装置 |
| US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
| EP3131405A1 (en) | 2014-03-03 | 2017-02-22 | Intercontinental Great Brands LLC | Method for manufacturing a comestible |
| CN104078344B (zh) * | 2014-07-11 | 2017-04-05 | 上海华力微电子有限公司 | 减少自对准硅化镍尖峰缺陷和管道缺陷的方法 |
| KR102378538B1 (ko) * | 2015-08-11 | 2022-03-25 | 삼성디스플레이 주식회사 | 표시 장치의 제조 방법 |
| KR102361083B1 (ko) * | 2015-09-01 | 2022-02-11 | 한국화학연구원 | 탄화불소 박막의 제조방법 및 이의 제조장치 |
| WO2017039339A1 (ko) * | 2015-09-01 | 2017-03-09 | 한국화학연구원 | 탄화불소 박막의 제조방법 |
| US10443146B2 (en) | 2017-03-30 | 2019-10-15 | Lam Research Corporation | Monitoring surface oxide on seed layers during electroplating |
| US12230539B2 (en) * | 2018-08-01 | 2025-02-18 | Texas Instruments Incorporated | Wafer chip scale packaging with ball attach before repassivation |
| US11527413B2 (en) * | 2021-01-29 | 2022-12-13 | Tokyo Electron Limited | Cyclic plasma etch process |
| US12317554B2 (en) * | 2021-04-09 | 2025-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structures for semiconductor devices |
| TW202503924A (zh) * | 2023-07-10 | 2025-01-16 | 美商應用材料股份有限公司 | 形成互連結構的方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1052694A4 (en) * | 1998-01-10 | 2004-11-24 | Tokyo Electron Ltd | SEMICONDUCTOR ARRANGEMENT WITH INSULATING FILM BASED ON FLUORIDE CARBON |
| JP3189781B2 (ja) * | 1998-04-08 | 2001-07-16 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP4005295B2 (ja) | 2000-03-31 | 2007-11-07 | 富士通株式会社 | 半導体装置の製造方法 |
| US20050064701A1 (en) * | 2003-09-19 | 2005-03-24 | International Business Machines Corporation | Formation of low resistance via contacts in interconnect structures |
| US7776736B2 (en) | 2004-05-11 | 2010-08-17 | Tokyo Electron Limited | Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same |
| JP4555143B2 (ja) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
| US8193642B2 (en) * | 2005-06-20 | 2012-06-05 | Tohoku University | Interlayer insulating film, interconnection structure, and methods of manufacturing the same |
| JP2007067336A (ja) * | 2005-09-02 | 2007-03-15 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法及び半導体装置 |
| US7902641B2 (en) * | 2008-07-24 | 2011-03-08 | Tokyo Electron Limited | Semiconductor device and manufacturing method therefor |
-
2010
- 2010-01-21 TW TW099101690A patent/TW201044462A/zh unknown
- 2010-01-22 WO PCT/JP2010/000347 patent/WO2010084759A1/en not_active Ceased
- 2010-01-22 KR KR1020117017379A patent/KR101269925B1/ko not_active Expired - Fee Related
- 2010-01-22 US US13/138,242 patent/US8765605B2/en not_active Expired - Fee Related
- 2010-01-22 JP JP2011554343A patent/JP5271426B2/ja not_active Expired - Fee Related
- 2010-01-22 CN CN2010800052966A patent/CN102292798A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012516065A (ja) | 2012-07-12 |
| CN102292798A (zh) | 2011-12-21 |
| WO2010084759A1 (en) | 2010-07-29 |
| KR20110105847A (ko) | 2011-09-27 |
| TW201044462A (en) | 2010-12-16 |
| US8765605B2 (en) | 2014-07-01 |
| KR101269925B1 (ko) | 2013-05-31 |
| US20110318919A1 (en) | 2011-12-29 |
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