CN102292798A - 氟碳化合物膜的表面处理 - Google Patents

氟碳化合物膜的表面处理 Download PDF

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Publication number
CN102292798A
CN102292798A CN2010800052966A CN201080005296A CN102292798A CN 102292798 A CN102292798 A CN 102292798A CN 2010800052966 A CN2010800052966 A CN 2010800052966A CN 201080005296 A CN201080005296 A CN 201080005296A CN 102292798 A CN102292798 A CN 102292798A
Authority
CN
China
Prior art keywords
insulating barrier
accordance
cfx
described insulating
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800052966A
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English (en)
Chinese (zh)
Inventor
堀込正弘
黑鸟讬也
小林保男
松冈孝明
野泽俊久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN102292798A publication Critical patent/CN102292798A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2010800052966A 2009-01-22 2010-01-22 氟碳化合物膜的表面处理 Pending CN102292798A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20575209P 2009-01-22 2009-01-22
US61/205,752 2009-01-22
US20797109P 2009-02-17 2009-02-17
US61/207,971 2009-02-17
PCT/JP2010/000347 WO2010084759A1 (en) 2009-01-22 2010-01-22 Surface treatment for a fluorocarbon film

Publications (1)

Publication Number Publication Date
CN102292798A true CN102292798A (zh) 2011-12-21

Family

ID=42355815

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800052966A Pending CN102292798A (zh) 2009-01-22 2010-01-22 氟碳化合物膜的表面处理

Country Status (6)

Country Link
US (1) US8765605B2 (https=)
JP (1) JP5271426B2 (https=)
KR (1) KR101269925B1 (https=)
CN (1) CN102292798A (https=)
TW (1) TW201044462A (https=)
WO (1) WO2010084759A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN104078344A (zh) * 2014-07-11 2014-10-01 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法

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JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
PL2683251T3 (pl) 2011-03-11 2021-12-13 Intercontinental Great Brands Llc Sposób wytwarzania wielowarstwowych wyrobów cukierniczych
JP5912180B2 (ja) 2011-07-21 2016-04-27 インターコンチネンタル グレート ブランズ エルエルシー チューインガムの形成および冷却のためのシステムおよび方法
US8691709B2 (en) 2011-09-24 2014-04-08 Tokyo Electron Limited Method of forming metal carbide barrier layers for fluorocarbon films
JP5807511B2 (ja) * 2011-10-27 2015-11-10 東京エレクトロン株式会社 成膜装置及びその運用方法
KR101319929B1 (ko) * 2011-11-03 2013-10-18 주식회사 우신산업 차량용 사이드 리피터의 제조방법
US9111939B2 (en) * 2012-07-27 2015-08-18 Intel Corporation Metallization of fluorocarbon-based dielectric for interconnects
JP2014103165A (ja) * 2012-11-16 2014-06-05 Tokyo Electron Ltd 半導体素子の製造方法、および半導体素子の製造装置
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
EP3131405A1 (en) 2014-03-03 2017-02-22 Intercontinental Great Brands LLC Method for manufacturing a comestible
KR102378538B1 (ko) * 2015-08-11 2022-03-25 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102361083B1 (ko) * 2015-09-01 2022-02-11 한국화학연구원 탄화불소 박막의 제조방법 및 이의 제조장치
WO2017039339A1 (ko) * 2015-09-01 2017-03-09 한국화학연구원 탄화불소 박막의 제조방법
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US12230539B2 (en) * 2018-08-01 2025-02-18 Texas Instruments Incorporated Wafer chip scale packaging with ball attach before repassivation
US11527413B2 (en) * 2021-01-29 2022-12-13 Tokyo Electron Limited Cyclic plasma etch process
US12317554B2 (en) * 2021-04-09 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structures for semiconductor devices
TW202503924A (zh) * 2023-07-10 2025-01-16 美商應用材料股份有限公司 形成互連結構的方法

Citations (5)

* Cited by examiner, † Cited by third party
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JP2001284358A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
CN1624895A (zh) * 2003-09-19 2005-06-08 国际商业机器公司 在互连结构中低电阻通道接触的形成
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
CN1943021A (zh) * 2004-05-11 2007-04-04 东京毅力科创株式会社 电子装置用基板及其处理方法
CN101238555A (zh) * 2005-06-20 2008-08-06 国立大学法人东北大学 层间绝缘膜、布线结构以及它们的制造方法

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EP1052694A4 (en) * 1998-01-10 2004-11-24 Tokyo Electron Ltd SEMICONDUCTOR ARRANGEMENT WITH INSULATING FILM BASED ON FLUORIDE CARBON
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
US7776736B2 (en) 2004-05-11 2010-08-17 Tokyo Electron Limited Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same
US7902641B2 (en) * 2008-07-24 2011-03-08 Tokyo Electron Limited Semiconductor device and manufacturing method therefor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284358A (ja) * 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置
CN1624895A (zh) * 2003-09-19 2005-06-08 国际商业机器公司 在互连结构中低电阻通道接触的形成
CN1943021A (zh) * 2004-05-11 2007-04-04 东京毅力科创株式会社 电子装置用基板及其处理方法
CN101238555A (zh) * 2005-06-20 2008-08-06 国立大学法人东北大学 层间绝缘膜、布线结构以及它们的制造方法
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078344A (zh) * 2014-07-11 2014-10-01 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法

Also Published As

Publication number Publication date
JP2012516065A (ja) 2012-07-12
WO2010084759A1 (en) 2010-07-29
KR20110105847A (ko) 2011-09-27
TW201044462A (en) 2010-12-16
US8765605B2 (en) 2014-07-01
KR101269925B1 (ko) 2013-05-31
US20110318919A1 (en) 2011-12-29
JP5271426B2 (ja) 2013-08-21

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Application publication date: 20111221