TW201002089A - Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer - Google Patents
Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer Download PDFInfo
- Publication number
- TW201002089A TW201002089A TW098114039A TW98114039A TW201002089A TW 201002089 A TW201002089 A TW 201002089A TW 098114039 A TW098114039 A TW 098114039A TW 98114039 A TW98114039 A TW 98114039A TW 201002089 A TW201002089 A TW 201002089A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- hole
- layer
- diaphragm
- converter
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 238000005530 etching Methods 0.000 claims abstract description 30
- 238000000866 electrolytic etching Methods 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims description 45
- 238000007789 sealing Methods 0.000 claims description 34
- 229910052770 Uranium Inorganic materials 0.000 claims description 10
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 95
- 230000008569 process Effects 0.000 description 25
- 229910052581 Si3N4 Inorganic materials 0.000 description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 244000166124 Eucalyptus globulus Species 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002952 polymeric resin Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 210000003298 dental enamel Anatomy 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- KXSKAZFMTGADIV-UHFFFAOYSA-N 2-[3-(2-hydroxyethoxy)propoxy]ethanol Chemical compound OCCOCCCOCCO KXSKAZFMTGADIV-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 240000000731 Fagus sylvatica Species 0.000 description 1
- 235000010099 Fagus sylvatica Nutrition 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 101000693243 Homo sapiens Paternally-expressed gene 3 protein Proteins 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 102100025757 Paternally-expressed gene 3 protein Human genes 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Inorganic materials [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/038—Microengines and actuators not provided for in B81B2201/031 - B81B2201/037
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0315—Cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/04—Electrodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0114—Electrochemical etching, anodic oxidation
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008120391 | 2008-05-02 | ||
| JP2009057263A JP5305993B2 (ja) | 2008-05-02 | 2009-03-11 | 容量型機械電気変換素子の製造方法、及び容量型機械電気変換素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201002089A true TW201002089A (en) | 2010-01-01 |
Family
ID=40848069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098114039A TW201002089A (en) | 2008-05-02 | 2009-04-28 | Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8288192B2 (https=) |
| EP (1) | EP2274108B1 (https=) |
| JP (1) | JP5305993B2 (https=) |
| CN (1) | CN102015127B (https=) |
| TW (1) | TW201002089A (https=) |
| WO (1) | WO2009133961A1 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452651B (https=) * | 2012-03-08 | 2014-09-11 | ||
| CN107111788A (zh) * | 2014-10-31 | 2017-08-29 | Sk电信有限公司 | 防止露出绝缘层的离子阱装置及其制造方法 |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5376982B2 (ja) | 2008-06-30 | 2013-12-25 | キヤノン株式会社 | 機械電気変換素子と機械電気変換装置および機械電気変換装置の作製方法 |
| JP5317826B2 (ja) * | 2009-05-19 | 2013-10-16 | キヤノン株式会社 | 容量型機械電気変換素子の製造方法 |
| JP2012033806A (ja) * | 2010-08-02 | 2012-02-16 | Canon Inc | 電気機械変換装置 |
| KR101215919B1 (ko) | 2010-08-13 | 2012-12-27 | 전자부품연구원 | 정전용량형 압력센서 및 그의 제조방법 |
| CA2814123A1 (en) | 2010-10-12 | 2012-04-19 | Micralyne Inc. | Soi-based cmut device with buried electrodes |
| JP5778914B2 (ja) * | 2010-11-04 | 2015-09-16 | キヤノン株式会社 | 電気機械変換装置の製造方法 |
| JP5875244B2 (ja) * | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| JP5875243B2 (ja) * | 2011-04-06 | 2016-03-02 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| JP5921079B2 (ja) * | 2011-04-06 | 2016-05-24 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| JP5787586B2 (ja) * | 2011-04-14 | 2015-09-30 | キヤノン株式会社 | 電気機械変換装置 |
| JP5812660B2 (ja) * | 2011-04-19 | 2015-11-17 | キヤノン株式会社 | 電気機械変換装置及びその製造方法 |
| JP2013051459A (ja) * | 2011-08-30 | 2013-03-14 | Canon Inc | 電気機械変換装置及びその製造方法 |
| US8440523B1 (en) * | 2011-12-07 | 2013-05-14 | International Business Machines Corporation | Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch |
| MX2014008852A (es) * | 2012-01-27 | 2014-10-06 | Koninkl Philips Nv | Transductor capacitivo micromaquinado y metodo de manufactura del mismo. |
| JP6209537B2 (ja) * | 2012-01-27 | 2017-10-04 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 |
| CN104379268B (zh) * | 2012-05-31 | 2017-02-22 | 皇家飞利浦有限公司 | 晶片及其制造方法 |
| US8900975B2 (en) | 2013-01-03 | 2014-12-02 | International Business Machines Corporation | Nanopore sensor device |
| EP3604207A1 (en) * | 2013-03-05 | 2020-02-05 | Ams Ag | Semiconductor device with capacitive sensor and integrated circuit |
| JP5901566B2 (ja) * | 2013-04-18 | 2016-04-13 | キヤノン株式会社 | トランスデューサ、トランスデューサの製造方法、及び被検体情報取得装置 |
| EP2796209B1 (en) * | 2013-04-25 | 2020-06-17 | Canon Kabushiki Kaisha | Capacitive transducer and method of manufacturing the same |
| JP6238556B2 (ja) | 2013-04-25 | 2017-11-29 | キヤノン株式会社 | 被検体情報取得装置およびその制御方法、ならびに探触子 |
| EP2796210B1 (en) * | 2013-04-25 | 2016-11-30 | Canon Kabushiki Kaisha | Capacitive transducer and method of manufacturing the same |
| US9955949B2 (en) * | 2013-08-23 | 2018-05-01 | Canon Kabushiki Kaisha | Method for manufacturing a capacitive transducer |
| JP2015153978A (ja) * | 2014-02-18 | 2015-08-24 | キヤノン株式会社 | 貫通配線の作製方法 |
| US9067779B1 (en) | 2014-07-14 | 2015-06-30 | Butterfly Network, Inc. | Microfabricated ultrasonic transducers and related apparatus and methods |
| JP2016101417A (ja) * | 2014-11-28 | 2016-06-02 | キヤノン株式会社 | 静電容量型音響波トランスデューサ及びこれを備えた被検体情報取得装置 |
| DE102015221193B4 (de) * | 2015-10-29 | 2018-05-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zur Steuerung einer Intensität eines transmittierenden Anteils von auf die Vorrichtung einfallender elektromagnetischer Strahlung und Verfahren zur Herstellung der Vorrichtung |
| JP6177375B2 (ja) * | 2016-04-14 | 2017-08-09 | キヤノン株式会社 | 電気機械変換装置及びその作製方法 |
| US10062636B2 (en) * | 2016-06-27 | 2018-08-28 | Newport Fab, Llc | Integration of thermally conductive but electrically isolating layers with semiconductor devices |
| US10662055B2 (en) | 2017-04-27 | 2020-05-26 | Seiko Epson Corporation | MEMS element, sealing structure, electronic device, electronic apparatus, and vehicle |
| CN108423632A (zh) * | 2018-05-04 | 2018-08-21 | 李扬渊 | 一种能够实现超声波传感的电子设备及其制造方法 |
| CN108871389B (zh) * | 2018-05-10 | 2020-03-31 | 京东方科技集团股份有限公司 | 超声波传感单元及制作方法、超声波传感器及显示装置 |
| DE102018222749A1 (de) | 2018-12-21 | 2020-06-25 | Robert Bosch Gmbh | Verfahren zum Verschließen von Zugängen in einem MEMS-Element |
| CN114555248A (zh) | 2019-04-12 | 2022-05-27 | 布弗莱运营公司 | 用于微加工超声换能器器件的分段式吸气剂开口 |
| US11845654B2 (en) * | 2020-06-18 | 2023-12-19 | The University Of British Columbia | Methods of fabricating micro electro-mechanical systems structures |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL215555A (https=) | 1956-03-23 | |||
| GB849477A (en) * | 1957-09-23 | 1960-09-28 | Nat Res Dev | Improvements in or relating to semiconductor control devices |
| JPH0797643B2 (ja) * | 1987-07-08 | 1995-10-18 | 日産自動車株式会社 | 圧力変換装置の製造方法 |
| JPH06216111A (ja) | 1993-01-12 | 1994-08-05 | Nippondenso Co Ltd | ウェットエッチング方法 |
| JPH07115209A (ja) | 1993-10-18 | 1995-05-02 | Omron Corp | 半導体圧力センサ及びその製造方法並びに触覚センサ |
| JP3424371B2 (ja) * | 1995-01-31 | 2003-07-07 | 松下電工株式会社 | 加速度センサの製造方法 |
| GB9815992D0 (en) | 1998-07-23 | 1998-09-23 | Secr Defence | Improvements in and relating to microchemical devices |
| EP1105344B1 (de) * | 1998-08-11 | 2012-04-25 | Infineon Technologies AG | Mikromechanischer sensor und verfahren zu seiner herstellung |
| DE19922967C2 (de) | 1999-05-19 | 2001-05-03 | Siemens Ag | Mikromechanischer kapazitiver Ultraschallwandler und Verfahren zu dessen Herstellung |
| US20040094086A1 (en) | 2001-03-29 | 2004-05-20 | Keiichi Shimaoka | Production device and production method for silicon-based structure |
| US6659954B2 (en) * | 2001-12-19 | 2003-12-09 | Koninklijke Philips Electronics Nv | Micromachined ultrasound transducer and method for fabricating same |
| US6958255B2 (en) * | 2002-08-08 | 2005-10-25 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined ultrasonic transducers and method of fabrication |
| JP4193615B2 (ja) | 2003-07-04 | 2008-12-10 | セイコーエプソン株式会社 | 超音波変換装置 |
| ITRM20050093A1 (it) | 2005-03-04 | 2006-09-05 | Consiglio Nazionale Ricerche | Procedimento micromeccanico superficiale di fabbricazione di trasduttori ultracustici capacitivi microlavorati e relativo trasduttore ultracustico capacitivo microlavorato. |
| JP4632853B2 (ja) | 2005-05-13 | 2011-02-16 | オリンパスメディカルシステムズ株式会社 | 静電容量型超音波振動子とその製造方法 |
| JP5110885B2 (ja) * | 2007-01-19 | 2012-12-26 | キヤノン株式会社 | 複数の導電性の領域を有する構造体 |
| DE102007019639A1 (de) * | 2007-04-26 | 2008-10-30 | Robert Bosch Gmbh | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| JP5408935B2 (ja) * | 2007-09-25 | 2014-02-05 | キヤノン株式会社 | 電気機械変換素子及びその製造方法 |
| JP5712471B2 (ja) * | 2009-08-03 | 2015-05-07 | 富士通株式会社 | 化合物半導体装置の製造方法 |
-
2009
- 2009-03-11 JP JP2009057263A patent/JP5305993B2/ja not_active Expired - Fee Related
- 2009-04-28 CN CN2009801150893A patent/CN102015127B/zh not_active Expired - Fee Related
- 2009-04-28 TW TW098114039A patent/TW201002089A/zh unknown
- 2009-04-28 US US12/918,660 patent/US8288192B2/en not_active Expired - Fee Related
- 2009-04-28 WO PCT/JP2009/058720 patent/WO2009133961A1/en not_active Ceased
- 2009-04-28 EP EP09738898.7A patent/EP2274108B1/en not_active Not-in-force
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI452651B (https=) * | 2012-03-08 | 2014-09-11 | ||
| CN107111788A (zh) * | 2014-10-31 | 2017-08-29 | Sk电信有限公司 | 防止露出绝缘层的离子阱装置及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5305993B2 (ja) | 2013-10-02 |
| US8288192B2 (en) | 2012-10-16 |
| JP2009296569A (ja) | 2009-12-17 |
| CN102015127A (zh) | 2011-04-13 |
| CN102015127B (zh) | 2013-05-29 |
| WO2009133961A1 (en) | 2009-11-05 |
| EP2274108A1 (en) | 2011-01-19 |
| US20100327380A1 (en) | 2010-12-30 |
| EP2274108B1 (en) | 2013-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201002089A (en) | Method of manufacturing capacitive electromechanical transducer and capacitive electromechanical transducer | |
| JP5677016B2 (ja) | 電気機械変換装置及びその作製方法 | |
| US8426235B2 (en) | Method for manufacturing capacitive electromechanical transducer | |
| CN106454665B (zh) | 用于多电极mems器件的系统和方法 | |
| US8723241B2 (en) | MEMS device fabricated with integrated circuit | |
| CN105073280B (zh) | 具有贯穿衬底通孔（tsv）衬底插塞的电容式微机械超声换能器（cmut） | |
| JP6209537B2 (ja) | 容量性マイクロマシン・トランスデューサ及びこれを製造する方法 | |
| CN111151431B (zh) | 压电微机械超声换能器及其制造方法 | |
| JP6337026B2 (ja) | 基板貫通ビア（ｔｓｖ）を備えた容量性微細加工超音波トランスデューサ（ｃｕｍｔ）デバイス | |
| JP6190387B2 (ja) | 容量型微細加工トランスデューサ及びその製造方法 | |
| CN114728311A (zh) | 经边缘凹槽、虚拟枢轴和自由边界提高mut耦合效率和带宽 | |
| JP2012519958A (ja) | 低温ウエハ接合によって作製されるモノリシック集積型ｃｍｕｔ | |
| JP2003527947A (ja) | ウェーハ貫通バイア接続を有する容量性ミクロ機械加工超音波振動子素子のアレー | |
| JP6328131B2 (ja) | 容量性マイクロマシントランスデューサ及びその製造方法 | |
| CN111170265A (zh) | Mems器件及其制造方法 | |
| US20160001324A1 (en) | Electromechanical transducer and method for manufacturing the same | |
| Zhang et al. | Fabrication of capacitive micromachined ultrasonic transducers with through-glass-via interconnects | |
| WO2013089648A1 (en) | Capacitive micromachined ultrasonic transducer arrangement and method of fabricating the same | |
| JP2011254281A (ja) | 容量型電気機械変換装置の作製方法、及び容量型電気機械変換装置 | |
| KR20110029809A (ko) | 초음파 트랜스듀서 및 그 제조 방법 | |
| CN112423208B (zh) | 一种扬声器及其制造方法 | |
| CN104160721A (zh) | 高频cmut | |
| CN114505213A (zh) | 一种cmut芯片及其加工方法、cmut | |
| CN118283511A (zh) | Mems麦克风及其制作方法 | |
| JP2015154469A (ja) | デバイスの作製方法 |