JP6337026B2 - 基板貫通ビア(tsv)を備えた容量性微細加工超音波トランスデューサ(cumt)デバイス - Google Patents
基板貫通ビア(tsv)を備えた容量性微細加工超音波トランスデューサ(cumt)デバイス Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/0292—Electrostatic transducers, e.g. electret-type
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B8/00—Diagnosis using ultrasonic, sonic or infrasonic waves
- A61B8/44—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device
- A61B8/4483—Constructional features of the ultrasonic, sonic or infrasonic diagnostic device characterised by features of the ultrasound transducer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/002—Electrostatic motors
- H02N1/006—Electrostatic motors of the gap-closing type
- H02N1/008—Laterally driven motors, e.g. of the comb-drive type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
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Description
Claims (20)
- 容量性微細加工超音波トランスデューサ(CMUT)セルを含むCMUTデバイスであって、
前記CMUTセルが、
頂部側と底部側とを含む基板と、
前記基板の頂部側の上の誘電体層であって、第1の領域と、前記第1の領域により横方向に囲まれて前記第1の領域よりも薄い第2の領域とを含み、前記第1及び第2の領域がキャビティを定める、前記誘電体層と、
前記誘電体層の第1の領域上に直接に接合され、前記誘電体層の第2の領域の上で前記キャビティを取り囲む薄膜層であって、前記キャビティ内に可動薄膜を含む、前記薄膜層と、
前記基板と前記誘電体層と前記薄膜層とに入り込み、前記可動薄膜から横方向に離れて位置する基板貫通ビア(TSV)であって、前記薄膜層と共面になるように、前記基板の底部側から延在する導電性充填材を含む、前記基板貫通ビア(TSV)と、
前記基板の頂部側の上で前記導電性充填材に接する金属層であって、前記薄膜層に沿って横方向に延び、前記可動薄膜に接する、前記金属層と、
を含む、デバイス。 - 請求項1に記載のCMUTデバイスであって、
前記金属層の上の誘電性パッシベーション層を更に含む、デバイス。 - 請求項1に記載のCMUTデバイスであって、
第2のCMUTセルと、
前記基板の底部側の下の前記第1のCMUTセルの前記導電性充填材に接して前記第1のCMUTセルを前記第2のCMUTセルに接続する第2の金属層と、
を更に含む、デバイス。 - 請求項1に記載のCMUTデバイスであって、
前記薄膜層が単結晶シリコン材料を含む、デバイス。 - 請求項1に記載のCMUTデバイスであって、
前記導電性充填材が、銅を含み、前記基板の前記底部側から突出する、デバイス。 - 請求項1に記載のCMUTデバイスであって、
前記基板が、0.1Ω−cmより小さいか又はそれに等しい抵抗を有する、デバイス。 - 請求項1に記載のCMUTデバイスであって、
前記薄膜層が前記誘電体層に真空融解ボンディングされる、デバイス。 - トランスデューサデバイスであって、
第1の側と第1の側の反対の第2の側とを有する基板と、
トランスデューサセルと、
を含み、
前記トランスデューサセルが、
前記基板の第1の側の上の誘電体層であって、第1の領域と、第1の領域よりも薄く、キャビティを定めるために前記第1の領域により横方向に囲まれる第2の領域とを有する、前記誘電体層と、
前記キャビティを取り囲み、前記誘電体層の第2の領域の上に可動薄膜を含む薄膜層と、
前記基板と前記誘電体層と前記薄膜層とに入り込む貫通基板ビア(TSV)と、
を含む、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
前記薄膜層が前記誘電体層の第1の領域上に直接に接合される、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
前記TSVが、前記可動薄膜に垂直に重なっていない、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
前記TSVが、前記薄膜層と共面になるように前記基板の第2の側から延びる導電性充填材を含む、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
前記基板の第1の側に隣接する前記TSVに接する金属層であって、前記薄膜層に沿って横方向に延び、前記可動薄膜に接する、前記金属層を更に含む、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
前記薄膜層が単結晶シリコン材料を含む、デバイス。 - 請求項8に記載のトランスデューサデバイスであって、
第2のトランスデューサセルと、
前記第2のトランスデューサセルを前記基板の第2の側に隣接する前記トランスデューサセルの前記TSVに接続する金属層と、
を更に含む、デバイス。 - トランスデューサデバイスであって、
第1の側と前記第1の側の反対の第2の側とを有する基板と、
複数のトランスデューサセルであって、各トランスデューサセルが、
前記基板の第1の側の上の誘電体層であって、第1の領域と、前記第1の領域よりも薄く、キャビティを定めるように前記第1の領域により横方向に囲まれる第2の領域とを有する、前記誘電体層と、
前記キャビティを取り囲む薄膜層であって、前記誘電体層の第2の領域の上に可動薄膜を含む、前記薄膜層と、
前記基板と前記誘電体層と前記薄膜層とに入り込む貫通基板ビア(TSV)であって、誘電体充填材を含む、前記TSVと、
を含む、前記複数のトランスデューサセルと、
前記基板の第2の側に隣接する少なくとも2つの前記トランスデューサセルの導電性充填材に接続する相互接続金属層と、
を含む、デバイス。 - 請求項15に記載のトランスデューサデバイスであって、
前記薄膜層が前記誘電体層の第1の領域に直接に接合される、デバイス。 - 請求項15に記載のトランスデューサデバイスであって、
前記TSVが、前記可動薄膜に垂直に重ならない、デバイス。 - 請求項15に記載のトランスデューサデバイスであって、
前記導電性充填材が、前記薄膜層と共面となるように前記基板の第2の側から延びる、デバイス。 - 請求項15に記載のトランスデューサデバイスであって、
前記基板の第1の側に隣接する前記TSVに接する相互セル金属層であって、前記薄膜層に沿って横方向に延び、前記可動薄膜に接する、前記相互セル金属層を更に含む、デバイス。 - 請求項15に記載のトランスデューサデバイスであって、
前記薄膜層が単結晶シリコン材料を含む、デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/779,376 US9520811B2 (en) | 2013-02-27 | 2013-02-27 | Capacitive micromachined ultrasonic transducer (CMUT) device with through-substrate via (TSV) |
US13/779,376 | 2013-02-27 | ||
PCT/US2014/019011 WO2014134301A1 (en) | 2013-02-27 | 2014-02-27 | Capacitive micromachined ultrasonic transducer (cmut) device with through-substrate via (tsv) |
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JP2016511607A JP2016511607A (ja) | 2016-04-14 |
JP2016511607A5 JP2016511607A5 (ja) | 2017-04-06 |
JP6337026B2 true JP6337026B2 (ja) | 2018-06-06 |
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US (2) | US9520811B2 (ja) |
JP (1) | JP6337026B2 (ja) |
CN (1) | CN105025802B (ja) |
WO (1) | WO2014134301A1 (ja) |
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CN105025802B (zh) | 2018-01-05 |
JP2016511607A (ja) | 2016-04-14 |
CN105025802A (zh) | 2015-11-04 |
US20170050217A1 (en) | 2017-02-23 |
US20140239769A1 (en) | 2014-08-28 |
US9520811B2 (en) | 2016-12-13 |
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US10335827B2 (en) | 2019-07-02 |
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