TW200837830A - Method of manufacturing semiconductor chip - Google Patents

Method of manufacturing semiconductor chip Download PDF

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Publication number
TW200837830A
TW200837830A TW097108006A TW97108006A TW200837830A TW 200837830 A TW200837830 A TW 200837830A TW 097108006 A TW097108006 A TW 097108006A TW 97108006 A TW97108006 A TW 97108006A TW 200837830 A TW200837830 A TW 200837830A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
pad
mask
wafer
semiconductor
Prior art date
Application number
TW097108006A
Other languages
English (en)
Inventor
Kiyoshi Arita
Atsushi Harikai
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200837830A publication Critical patent/TW200837830A/zh

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dicing (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

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200837830 九、發明說明： 【發明所屬之技術領域】 本發明係關於-種半導體晶片之製造方法 對於每-積體電路分割—在切割線上已形 ：同： 之半導體晶圓而製造半導體晶片。 “忒圖案 【先前技術】 半導體晶片係以下面方式製造:在半導體晶圓狀 式形成複數個積體電路後，沿著切割線切割該半 =值：便相對於該等積體電路之每—者分割該半導 體曰曰®。傳統上已使用數種晶圓切割方法’例如，已知一 猎由旋轉刀片機械式地切割該晶圓之晶圓切割方法 參考專利公告1}，以及已知另—所謂根據—電聚切 副$程之方法的晶圓切割方法以取代該機械切割方法，其 =藉由-電漿蚀刻製程移除該晶圓之對應於切割線的部 刀，以便分割該晶圓（例如，參考專利公告2)等。 另一方面，在用以製造半導體晶片之階段♦，當形成電 路圖案時，在對應該等切割線之區域上形成用於特性測試 ，測试圖案；以及在已完成這些測試圖案之功能後，在切 剎製程期間切除或移除這些測試圖案。在專利公告】所示 之範例中，在用以切割該晶圓本身之切割製程前，已藉由 使用較寬之旋轉刀片事先移除該等測試圖案。結果，因為 移，該等測試圖案之全部部分，所以可允許避免切割平面 ^毛邊（burrs)」，其中該等「毛邊」係發生在部分切割 該等測試圖案的時候。 97108006 6 200837830 然後’關於在應用該電漿切割製程之勉中 案之移除已提出專利公告3所示之另一 q 範例中，以下面方式將一保護塾黏附至一 S = 電路形成平面：使該保護塾與測試圖案接觸ς，、 電=成平面之背面上形成一電㈣刻用罩幕，土及= 私漿蝕刻製程切割該晶圓；以及然後，鬆開盘該保護墊 結合之在該電㈣刻製程中尚未被移除而是被保留下來 之此一測試圖案及因而移除該測試圖案。結果，在該電將 程後再電漿灰化該電路形成平面侧，以便移= =幕’ Μ及因此’可去除該電漿灰化製程所造成之對該 包路形成平面的損害0 / [專利公告 1]JP-A-2001-250800 [專利公告 2]JP-A-2005-1 91 039 [專利公告 3]JP-A-2006-179768 【發明内容】 _ (發明所欲解決之問題） 此外，在上述專利公告中所述之習知技術包含下面困難 二+：即’在專利公告1所述之f知範例中，因為在該切 二=-·中需要使用兩種旋轉刀片之切割加卫，所以增加該 :处理步驟之總數，以致於阻礙生產力之改善。並且，在 ,專利公告3所述之範例中，在該等測試圖案之尺寸較大且 •=该等切割線上彼此相鄰之半導體晶片係彼此耦接而沒 、，何間隙之方式形成該等測試圖案的情況中，無法藉由 、气系歹】之製私氣體的使用只實施這樣的電漿姓刻製程 97108006 7 200837830 來移除該等測試圖荦。纟士罢Sfl 除之^ “關於通用特性很難限制可去 η:如先前所述，在該等習知半導體晶片之製: 法中’具有下面所述之問題 w方 '會很難以較高效率及簡單步驟特性時， •測試圖案。 7輝在該切❹驟中移除該等 本發明之一目的係提供一種能在簡單步驟中 之製造方法。〇確保仙特性之半導體晶片 (解決問題之手段） 依據本發明之一態樣，一半導體 ^ , ΠΓ ΛΛ „ ^ . 干^體日日片之製造方法的特徵 為如下的+導體晶片之製造方法，其中藉由一電黎㈣制 ^割-包含複數個形成於以複數個：： ^個區域中之積體電路及包含複數個形成於該等」^ —之^圖案的+導體晶圓’以便相對於該等積體電路之 =者製造個別半導體晶片，以及其中該半導體晶片之製 =方法包括：-測試圖案移除步驟，其中因為沿著該半導 租晶圓之切割線從該等稽髀帝 雷射光，所以與該半導體晶圓：一 面侧照射 ^ 版日日IU之正面層一起移除該等測 &圖案；-電路保護墊黏附步驟，用以在實施該測試圖案 移除步驟後，黏附-電路保護塾於該半導體晶圓之該電路 形成平面上；一晶圓背面研磨步驟，用以在已黏附該電路 保濩塾之狀況下從該電路形成平面之背面機械式地研磨 該半導體晶圓，以便薄化該半導體晶圓；一罩幕用塾黏附 步驟’用以在實施該晶圓背面研磨步驟後，黏附一罩幕用 97108006 8 200837830 墊於u亥半^體晶圓之为面’該罩幕用塾構成在該電襞姓刻 製程中之一罩幕；一罩幕加工處理步驟，其中因為沿著黏 附有該罩幕用墊之該半導體晶圓的切割線從該罩幕用墊 侧知射雷射光，所以只移除在該等切割線上之該罩幕用墊 的預疋見度，以便加工處理該罩幕；一電襞切割步驟， 其中因為在實施該罩幕加工處理步驟後，電漿蝕刻在該半 導體晶圓中對應於該罩幕用墊之該移除預定寬度的部 ⑩分，所以移除一因該雷射光照射所產生之受損層，以及並 且，相對於該等個別積體電路分割該半導體晶圓；一黏著 墊黏附步驟，其中在實施該電漿切割製程後，藉由覆蓋該 罩幕用墊之上面將一黏著墊黏附至該半導體晶圓，同時使 用該黏著墊，以便在已個別分割該等半導體晶片之狀況下 握=該等半導體晶片；以及一電路保護墊移除步驟，用以 該黏著墊黏附步驟後，從該半導體晶圓移除該電路 保δ隻2C1。 (發明效果） 依：本务明，使用下面所述之電漿切割用罩幕加工方 光，以：梦ί此方法中’從該電路形成平面侧照射該雷射 塾,該等測試圖案；以及之後，在將該電路保護 妒成平^⑨路形成平面之狀況下，機械式地薄化該電路 加工處理”將+ 及然後精由照射該雷射光 漿切割f+ 禾攸該溥化製程至該電 衣私可猎由❹—組該電路保護墊握持該半導體 97108006 9 200837830 晶圓。因此，當確保該通用特性時， 步驟移除該等職圖案。 了叫以率及簡單 【實施方式】 之半導體晶圓！，該半導體晶U係使 、依據本發明之具體例模式的半導體晶片之製造方 將，车2 1巾’藉由使用配置成晶袼形狀之切割線2a 體晶圓i分割成複數個具有矩形形狀之晶片區
'，以便彼此切斷個別半導體晶片。在該半導體晶圓J #主電路开少成平面1 a上，已在每一晶片區域2中分別形 j、和體電路3，以及已在該等切割線2a中形成測試圖案 P該^測忒圖案4係在半導體晶片之製造步驟中用於特性 測減等’ ϋ在完成該等測試圖t 4之功能後移除該等測試 圖案#4。在本具體例模式所示之半導體晶片之製造方法 97108006 200837830 中，在-晶圓支撐單元U上支撐該半導體晶圓卜其中 在該正面la上形成有該等切割線2a所分割之晶圓區域 、2。在該晶圓支撐單幻1上方，藉由—運輸機構π以-自由運輸方式配置-安裝有—雷射照射單元5及一攝影 ，機19之運輸板18。該雷射照射單元5相對於在該雷射照 射單元5下方之半導體晶圓1照射由-雷射產生單元14 所產生之雷射光5a。 該攝影機19係一紅外線摄旦彡德议m • 1π r踝攝衫機及用以成像在該攝影機 下方之半導體晶圓卜以便成像該半導體晶圓1之積體 電路3、識別記號等。然後，藉由一識別單元16識別處 ==，以便糊在該半導體晶圓1中之積體電路 及=線2a之行列位置。藉由—控制單元㈣制該雷 =生=元14、該識別單元16及該運輪機構17。當該控 =早二15控制這些個別結構單元，以回應從—操作/輸入 二所輪人之操作指令時，該控制單幻5參考在一工 癱作貧料儲存單元13中所儲在欠 響留m "甲所储存之貝枓。在該工作資料儲存 已儲存關於該等切割線2a之行列位置、關於對 線2&之寬度的切割寬度之資料及另外關於 形成於專切割、線2a上之測試圖案4的寬度尺寸之 料。可以藉由該操作/輸入單 、 .儲存早το 13之資料寫入操作。 貝付 •當上述雷射加工裝置1〇實施-雷射加工操作，同护佶 -用該半導體晶圓j做為一加工標的時 制 $ 據該識別單元16所_之半導體日圓= ，只』心千涂骽日日ID i的一實際位置及 97108006 11 200837830 在該工作資料儲存單元13中所儲存之用以表示 線％的位置之資料來控制該運輸機構17。結果，兮運二 —機構Π在該半導趙晶W之上面上方沿著該等果心= 該雷：照射單元5。然後，因為該控制單元二 生^工作貝料儲存單元13中所儲存之資料控制該雷射產 =早兀\4’所以移除構成該標的之測試圖案4。除此以 一因為趣制單元15根據上述#料控制該雷射產生 。射該雷射照射單元5照射具有適當輸出二 ==呈:有適當輸出功率之雷射光，以便在下 ”斤：之罩幕加工操作中移除一對應於 除寬度的罩幕用墊9(參考圖5)。 』見度之和 接著，在該測試圖案移除步驟ST1 加工操作，所以當將一口為貝知此雷射 笪丨仏Ο 置在一用以移除形成於古玄 專切節a上之測試圖案4所需之 二：亥 移除與該等測試圖案4結合之該正面層:以=二/二％ ’ 體晶圓1之電路形成平面丨中 9 《在該半導 丨叫id甲形成一凹部卜。 在該凹部1C之底面中形成-受損層…該受二心 因實施該雷射加工操作而改變 又才貝層1d係 所構成。換句話說，在此階段中，+二體:曰圓;^夕成分 1之切割線2a從該等積體電路3之電路；*體晶圓 =該雷射光5a’所以移除與該半導體晶圓之面1:: 合之在對應於該半導體晶圓】中 广1之正面層結 形成之測試圖案4。 al、〃 2a的位置上所 接下來，如圖3之部分⑷所示，在執行該賴圖案移 97108006 12 200837830 除^驟ST1後，將-電路保護塾6黏附至該半導體晶圓i 之電路形成平面la側上（電路保護墊黏附步驟ST2)。該 、，路保護墊6係-具有-黏著層之㈣塾。在此具體^ .式中，使用此- UV(紫外線）帶，藉由以紫外線來照射以 降低其黏著力。之後，實施一晶圓薄化加工。亦即，如圖 3之部分⑷所示’在已將該電路保護墊6黏附至該電ς 形^平面la之狀況下，藉由使用一研磨工具？〇從該半導 鲁體晶圓1之背面lb機械式地研磨該半導體晶圓1來薄化 该半導體晶圓1至一預定厚度（晶圓背面研磨步驟奵3)。 5亥半導體晶圓1之背面lb相對於其電路形成平面la。接 下來，如圖5之部分（a)所示，因為在機械式地研磨該半 導體晶圓1後，對該背面lb提供氟氣電漿「ρι」之效應， 所以藉由一使用圖6所示之一電漿處理裝置2〇的電漿蝕 刻製程移除一在該晶圓背面研磨步驟ST3中實施該機械 研磨操作所產生之處理變化層（處理變化層移除步驟 ST4) 〇 接下來，參考圖6來描述在上述用以移除該處理變化層 之電漿蝕刻製程及一稍後所述之電漿切割製程中所使用 之電襞處理裝置20。在圖6中，一真空室21之内部空間 構成一緊密密封處理空間，以便相對於該半導體晶圓i實 施一電漿處理操作。在該真空室21之内部空間中，'以二 對位置方式配置一高頻側電極22及一氣體供應電極23。 在一絕緣環22a包圍該半導體晶圓1之周圍部分的狀況下 在該高頻側電極22上安裝做為一待處理之標的的半導體 97108006 13 200837830 曰曰圓1以及以冑空吸附方式或—靜電吸附方式在該言 頻侧電極22上握持該安財導體晶圓1。 ⑽ 產=t體供應單元27a及另-電漿產生用氣 肢供應早凡27b分別經由關/明p日 „ ΟΛ 由開/關閥25&及25b及流速控制 =26&*柳連接至一形成於該氣體供應電極23中」 =孔…。該電漿產生用氣體供應單元％供應一氟 电水產生用乳體’该氟系列電聚產生用氣體係使用於 :用以移除該半導體晶圓（之矽(亦即，主要成分)以便形 、切副槽及移除該處理變化層之電漿切割製程中。該♦ 裝產生用氣體供應單元27b供應氧氣或一氧混合氣體，^ 乳氣或氧混合氣體係㈣於此―用以執行—能移除該樹 脂墊之灰化製程的電浆處理操作中。因為控制該等開鳩 閥j5a及25b及該等流速控制閥26a及2牝，所以可選擇 對該氣體供應孔23a所供應之電漿產生氣體的種類，以及 可調整該等氣體供應流速。 • 經由一在該氣體供應電極23之下面所安裝之多孔板24 相對於在該高頻侧電極21上所安裝之半導體晶圓丨均勻 地噴灑該供應電漿產生用氣體。在上述情況下，驅動一高 頻電源供應單元28以便供應高頻電壓。結果，在該氣= 供應包極23與該尚頻侧電極22間產生該氧氣體之電漿或 •該氟系列之電漿，以便藉由使用該產生電漿氣體實施一用 於每一情況之電漿處理操作。在此電漿處理步驟中，驅動 冷卻單元29 ’以便使一冷卻劑在該高頻侧電極22内循 環’以及因此’可避免因接收該產生電漿之熱而增加該半 97108006 14 200837830 導體晶圓1之溫度。 之後’如圖5之部分㈦所示’在該晶圓背面研磨步驟 ST3後移除該變化層（步驟ST4)之後，將一罩幕 附至該半導體晶圓1之背面「⑽」（亦即，罩幕用塾黏^ 步驟ST5)。該罩幕㈣9在__電漿㈣製程巾構 幕’以便分割該半導體晶圓！成為個別半導體晶片。在牛 驟ST5中，當使用—具有—晶粒黏著膜7之樹脂塾8㈣ 料^墊9時，以使此晶粒黏著膜7接觸該半導體晶圓 1之月面「⑽」的方式將上述罩幕用塾9黏附至面 「⑽」。並且，設計使用一⑽帶做為該樹脂墊8,同時 該UV帶具有一可藉由紫外線之照射來降低黏著力之黏著 層。在該等後繼步驟之晶粒接合步驟中，從該叭帶之下 面侧照射紫外線’以便可輕易獲得個別半導體晶片。 接下來，藉由使用圖4所示之雷射加玉裝/1()，照射 雷射光以實施-罩幕加工操作（步驟咖）。亦即，如圖5 之部分（c)所示’因為沿著上面已黏附有該罩幕用塾9之 半導體晶圓1的切割線2a從該罩幕用塾9侧照射該雷射 光5a，所以只移除在該等切割線2a上—預定寬度之所黏 附的罩幕用墊9 ’以便形成一槽告"a及加工處理一用於 電漿切割製程之罩幕(罩幕加工步驟ST6)。該預定寬度對 應於一切割寬度。 在使用該雷射光5a之罩幕加卫操作中，藉由該雷射光 5a移除該罩幕用墊9之對應於切㈣2以界線區域之樹 脂成分，以便形成上述槽部9a。然後，該槽部9&之底部 97108006 15 200837830 達到該罩幕用墊9之下面(亦即，該晶粒黏著膜7之下 面），以及之後，可以對該半導 3, ^ m | , 〒體日日W 1挺供該雷射光5a •之效應。'‘果，相似於圖3之部分⑻所示之凹部lc，在 ,半導^曰1] 該雷射光5a移除該 “脰曰曰0 1之正面層的凹部lc。然後，在該凹部卜之 下面形成另-包含非常小裂縫之受損層ld。 如果只留下該等受損層1d，m 、 ^ ^ a 、 則降低該半導體晶圓1之 強度。於疋，必須移除這4b受 中，當在該半導體晶圓i之—電本具體例模式 形成該等受損層Id，在此一萨V面a及背面11)上 分割該半導體晶圓^電^^由牛實施一電裝姓刻製程以 除該等受損層。在此時：：.細:中，企圖同時移 該槽部9a之底部的開口寬度斤示一，因超出 之產生範圍。在該開口寬度「:」：擴f該專糊ld id之最小移除寬度「w 」^不#下該等受損層 處於被該罩幕用塾9之·;面^⑼中’使該等受損層id 部分⑷所示之箭頭「a)面^分覆蓋之狀況（參考圖7之 該電㈣㈣歡縣的；^下’無法提供 9之下面所覆蓋的部分，而f:? 1(1之被該罩幕用塾 分割該半導體晶圓i成為在猎由該電聚切割製程 成為该專個別半導體晶片後，會有使 戎4文扣層Id部分留下之可能性。 便 結果’實施能在該雷婿 損戶Id之制〇彳衣程中完全移除上述有害受 貝層之衣^呆作（ST7)。亦即，實施一所謂「灰化」制 程，以便以該電襞姓刻製程使該罩幕用墊9之槽部9a = 97108006 16 200837830 開口見度「w^擴大成開口寬度「心」，其中該開口寬度 id - VI上述最小移除寬度「Wr」寬，以便使所有受損二 =路於該槽部9a之底部。藉由實施—初步電聚^ :末執行此灰化製程’以便在電漿切割步_之執行： =該雷射光5a所移除之該罩幕用塾9的槽部&之開= 換D之，當使用在該罩幕加工步驟ST6後所獲得之 虹日日圓1做為標的時，實施此一〆胁 做為該電漿產生用氣體之” “乳以該“合氣體 部八⑷新 處理操作。結果，如圖5之 q刀 不，相對於在該罩幕用墊9中形成有該等栌部 該1提供氧氣錢⑺」之效果，以^ ^ 9及該等槽部9a内部提供該氧氣電漿「p2 収成之等向性偏彳效果，以及並且，實施—灰 」，
It由該灰化掣翁你非_1 r- 衣矛壬 棟^使對應於有機物質之罩幕轉9成為灰 姐，便以該氧氣電漿「P2」來移除。 果現圖8來描述上述灰化製程所達成之詳細效 操作後之一二？ (a)顯示在藉由該雷射光實施該罩幕加工 θ 9a的狀況。如圖8之部分（a)所示，在奋 幕T操作後之槽部9a，，該樹脂塾8之内‘ “疋一平滑面，而是處於形成具有非常細微條狀之凹/ 狀况。然後’在該槽部9a之上緣的上緣部8b形成 “亥‘化樹脂墊δ隆起及固化之毛邊部。又，該上缘部 讥之附近中的部分處於黏附有喷綱c之狀況。在該等 嘴濺物8C中，使該樹脂墊8之曾經熔化的樹脂成分固化 97108006 17 200837830 成非常小粒子形狀。此外，在該槽部9a之底部出現殘留 物？a，同時在這些殘留物7a中部分留下該晶粒黏著膜7 ^ =未移除部分。接著，在上述狀況下，該槽部9a在該底 ，部之開口寬度變成比上述最小移除寬度「Wr」小之「W1」。
、圖2之部分（b)表示相對於圖8之部分（a)所示之狀況在 以該氧氣電聚「P2」實施-灰化製程後所獲得之該槽部 9a的狀況。如此圖式所示，由於該氧氣電漿「p2」之等 φ向性㈣效果，平滑化在該樹脂塾8之表面及該内侧面 8a之内部所存在之凹/凸部，以致於該内側面心及該上 緣部8b可以成為平滑表面，以及因此，該等嘴濺物8c及 該等殘留物7a消失不見了。接著，對該槽部9a之内侧面 8a及底部提供祕刻效果，以便擴大該槽部之開口寬度 成為比圖8之部分(a)所示之開口寬度「wi」&「計」J 之「W2」。結果’可以達到下面關於該等受損们d之改善。 亦即’如圖7之部分（a)所示，該罩幕用墊9在其兩個邊 ♦緣部上（參考箭頭「a」）部分覆蓋該等受損層Id之狀況可 以變成在該槽部9a中暴露該等受損層Id之整個部分的狀 況（如圖7之部分（b)所子、.^ t 、 下）。在擴大該切割寬度之狀況下 實施下述電漿切割製程。 接下來貝，上述電漿切割製程（步驟ST8)。亦即，如 圖9之4刀⑻所不，在該灰化製程步驟st
該半導體晶圓1之部分，t J _ / — 问4上述部分對應於該擴大切割 覓度（預定寬度），以便移广姑 矛、該雷射光5a照射所產生之受 損層Id，以及再者，相斟认斗斤 土心又 子於该專積體電路3之每一者分 97108006 18 200837830 割該半導體晶圓1 (電漿切割步驟ST8)。結果，將該半導 體晶圓1切割成個別半導體晶片「1>fc」。之後，如圖9之 ^ 部分（b)所不’在實施該電漿切割製程後，藉由覆蓋該罩 幕用墊9之上面的樹脂墊8將一黏著墊黏附至該半導 •體晶圓1(黏著墊黏附步驟ST9)。使用該黏著墊30，以便 在分割狀況下握持該等半導體晶片1>fc。 接著，在實施該黏著墊黏附步驟ST9後，從該半導體晶 _圓1移除該電路保護墊6(電路保護墊移除步驟ST1〇)。換 句話說，如圖9之部分（c)所示，在沿著上/下方向反轉黏 附有該黏著墊30之半導體晶圓丨及然後使該黏著墊3〇位 於下面側後，向上撕開該電路保護墊6，以便相 個別半導體晶片「1*」從嗲丰導，曰同7 4 」攸这牛蛤體晶圓1之上面la鬆開 口亥电路保濩塾6。此時’將紫外線事先照射至該電路保護 墊6,以便降低該電路保護塾6之黏著力。然後，結果^ 如圖9之部分⑷所示，可以完成該等半導體晶片「^」 ，組合體m。該組合體101具有下面這樣的結構：藉由 刀剎圖1所不之半導體晶圓1成為 ㈣個別半導體晶片4」所製成之半導體晶片…成= 由该罩幕用墊9而被握持在該黏著墊30上。 」、、二 τ在以一像一晶圓環之夾具握持此組合體101的狀、兄 下，將該等半導體晶片Γ1 * 的狀况 位人止 片1」之組合體1〇1運送至一日物 接合步驟，以及然後，如圖10所 曰曰拉 之握持從該黏著塾30 -個-個地連續^ ^工具31 體晶片「1木」。當獲得該 、、、固別半導 寻千V體日日片Γι*」時，因為事 97108006 200837830 著墊3G之下面侧照射紫外線，所以降低用以黏 :該曰曰叔黏著膜7之樹脂墊8的黏著力，以致於可以在該 月面Π)上所黏附之晶粒黏著膜7與該樹脂墊8分離之狀 又：廷些半導體晶片Γ1*」。然•，將該等獲得半導 跑：日日片1 *」經由對應於該黏著層之晶粒黏著膜7接合在 一基板（未顯示）上。 、口 μ 了解到在上述具體例模式中，可能發生下述技術困 難點。亦即’在圖5之部分（c)所示之罩幕加工步驟sT6 中’在該雷射光5a穿過該罩幕用墊9之處的槽部肫之剖 面中，因接收雷射光5a之熱而熔化該晶粒黏著膜7及爷 樹脂墊8之邊緣面。結果，當獲得圖1〇所示之半導體晶 片「1*」日夺，可能很難使該晶粒黏著膜7與該樹脂塾8彼 此分離。在此情況中，使用下面黏附該黏著墊30兩次之 方法。 相似於圖9所示之狀況，K u之部分（a)表示在該電裝 φ切割製程後將該黏著墊30黏附至該樹脂墊8之狀況。此 時，在黏附該黏著塾30前已事先將紫外線照射至該樹脂 墊8，以便降低該樹脂墊8之黏著力。接下來，如圖工工 之部分（b)所示，向上分離該黏著墊3〇。結果，可以使黏 著力已降低之樹脂墊8與該晶粒黏著膜7分離，以便與該 黏著墊3 0 —起被鬆開。
I ，接下來，如圖11之部分（c)所示，再次將一黏著墊3〇 黏附至該晶粒黏著膜7之上面。然後，如圖u之部分（d) 所示，在沿著上/下方向反轉再次黏附有該黏著墊3〇之半 97108006 20 200837830 昏體晶圓1及然後使該黏著墊3〇位於下面侧後，向上撕 開該電路保護墊6,以便相對於該等個別半導體晶片「1*」 從該半導體晶圓1之電路形成平面la鬆開該電路保護塾 6。此時，將紫外線事先照射至該電路保護墊6，以便降 低該電路保護墊6之黏著力。
，果，如圖11之部分（e)所示，可以完成該等半導體晶 片丨*」之組合體1〇1Α，同時該組合體1〇1A具有下面這 枚的結構.該等半導體晶片「丨*」經由該晶粒黏著膜7已 被握持在該黏著墊30上。然後，在圖12所示之晶粒接合 γ騄中，當藉由該握持工具31握持該等個別半導體晶片 1*時，從該黏著墊30 —個一個地連接獲得這些半導體晶 片1*。此時’如果相似於圖10所示之範例使用一 uv ; 做為該黏著# 30 ’則因為事先將紫外線照射至該黏著塾 3〇，可以輕易地從此獲得該等半導體晶片 換言之’在上述具體例中，藉由包含一第一黏著塾黏 步驟、-樹脂墊鬆開步驟及—第二黏著墊黏附步驟以具 化該黏著墊黏附步驟^在該第一黏著墊黏附步驟中，藉 覆蓋該樹脂墊8之上面來黏附該黏著墊3〇。該樹脂‘ 開步驟在該第一黏著墊黏附步驟後鬆開與該黏著墊如 合之該樹脂墊8。在第二黏著墊黏附步驟中，藉由在該 脂墊鬆開步驟後覆蓋該晶粒黏著冑7之上心黏附； 著墊30。 ~ 之半導體晶片之製 工方法。亦即，從 如先前所述，在本具體例模式所揭露 造方法中，使用下述電漿切割用罩幕加 97108006 21 200837830 該電路形成平面la侧照射該雷射光，以便移除該等測試 圖案4;以及之後’在將該電路保護墊6黏附至該電路形 .j平面18之狀況下，機械式地薄化該電路形成平面^之 .背面lb;在該平面薄化製程後’將構成在該電漿蝕 程中之罩幕的罩幕用塾9黏附至該半導體晶圓！之背面 lb ’以及職’藉由照射該雷射光來加I處理該
用罩幕。 书K刀口J •結果’從該薄化製程至該電㈣割製程可藉由使用 =路保，塾6握持該半導體晶圓！。因此，可確保通用特 ’叫可以較尚效率及簡單步驟移除該等測試圖案4。 換句話說，相較於習知所使用之各種方法（例如，夢 中使用一兩種旋轉刀片機械式地移除該等'則試 :案之方法)’可貫現該等測試圖案4之移除步驟的簡單 可以應用本具體例所示之方法至下 較大時’以使在切割線上彼此相鄰之； 圖案形成情況中所使用之像氣系：氣= 刻製程，可在該電漿姓刻製程中以該氣“ = 體的使用移除該等測試圖案。結果，因為庫 藉由使用該等簡單步驟結構以較高 X月，可 較好通用特性之半導體晶片之製造方法產政率實現該具有 (產業上之可利用性） 97108006 22 200837830 本^之半導體晶片之製造方法具有下面優點：可在該 :、Θ車y驟中以效率移除該等測試圖案，同 ^用特性’以及上述半導體晶片之製造方法可以有效地 應用至下面技術領域：相對於每一積體電路分割一形成 稷數個積體電路之半導體晶圓，以便製造個別半導體晶 【圖式簡單說明】 j依據本發明之—具體例模式的-半導體晶片 衣t '所使用之一半導體晶圓的詳細說明圖。 片據本發^缝式料導體晶 導= 之至說:依據本發明之具體例模式的半 宁日日乃I衣化方法之步驟的說明圖。 曰表示在依據本發明之具體纏式的半導體 曰= 中所使用之一雷射加工裝置的立體圖。 半i體在依據本發明之具體例模式的 圖6係用以顯示在依據之本一於+m圓的部分剖面圖。 曰據本 具體例模式的半導體 曰曰片之衣&方法中之一電漿處理裝置的剖面圖。 、，圖（）（b)係用以顯示在依據本發明之具體例模式的 半導體晶、片之製造方法中之-半導體晶圓的剖面圖： 丰【二：係用以顯示在依據本發明之具體例模式的 + V體二片,4造方法中之-半導體晶圓的剖面圖。 田 )係用以說明依據本發明之具體例模式的半 97108006 23 200837830 導體晶片之製造方法之步驟的說明圖。 二 =以說明依據本發明之具體例模式的半導體晶 衣以方法之步驟的說明圖。 半明㈣本發明之具體例模式的 ^/衣&方法之步驟的說明圖。 圖12係用以說明依據 【主要元件符號說明】 1 半導體晶圓 1* 半導體晶片 la 電路形成平面 lb 背面 lb* 背面 1c 凹部 Id 受損層 2 晶片區域 2a 切割線 3 積體電路 4 測試圖案 5 雷射照射單元 5a 雷射光 6 電路保護墊 7 晶粒黏著膜 7a 殘留物 片之制、止t、+兄月依據本發明之具體例模式的半導 片之製造方法之步驟的說明圖。 曰曰
97108006 200837830
8 樹脂墊 8a 内侧面 8b 上緣部 8c 喷濺物 9 罩幕用墊 9a 槽部 10 雷射加工裝置 11 晶圓支撐單元 12 操作/輸入單元 13 工作資料儲存單元 14 雷射產生單元 15 控制單元 16 識別單元 17 運輸機構 18 運輸板 19 攝影機 20 電漿處理裝置 21 真空室 22 南頻側電極 22a 絕緣環 23 氣體供應電極 23a 氣體供應孔 24 多孔板 25a 開/關閥 97108006 25 200837830 25 b 開/關閥 26a 流速控制閥 26b 流速控制閥 27a 電漿產生用氣體供應單元 27b 電漿產生用氣體供應單元 28 高頻電源供應單元 29 冷卻單元 30 黏著墊
31 握持工具 70 研磨工具 101 組合體 101A 組合體 a 箭頭 P1 氟氣電漿 P2 氧氣電漿 W1 開口寬度 W2 開口寬度
Wr 最小移除寬度 97108006 26

Claims (1)

  1. 200837830 十、申請專利範圍： 1. -種半導體晶片之製造方法，其中藉由— 程分割-包含複數個形成於以複數個切割二/衣 .:個區域中之積體電路及包含複數個形成於該；； =之測4圖案的半導體晶圓，以便相對於該 ： :者而製造個別半導體晶片，該半導體晶片之製::: •旬：:=案移除步驟’其中因為沿著該半導體晶圓之切 讀=㈣積體電路之電路形成平面侧照射雷射光 與遠半導體晶圓之一正面層一起移除該等測試圖案； 電路保遵塾黏附步驟，用以在實施該測試圖案移+ 驟後’黏附-電路保護墊於該半導體晶圓之該電路形成; 面上； 、一 ^圓背面研磨步驟，用以在已㈣該電路保護塾之狀 況下從《亥電路形成平面之背面機械式地研磨該半導體晶 圓，以便薄化該半導體晶圓； 曰 罩幕用墊黏附步驟，用以在實施該晶圓背面研磨步驟 後’、黏附一罩幕用墊於該半導體晶圓之背面，該罩幕用墊 構成在該電漿飯刻製程中之一罩幕· -罩幕加工處理步驟，其中因為沿著黏附有該罩幕用墊 之該半導體晶圓的切割線從該罩幕用塾側照射雷射光，所 以只移除在該等切割線上之該罩幕用塾的一預定寬度，以 便加工處理該罩幕； 一電漿切割步驟，其中因為在實施該罩幕加工處理步驟 97108006 27 200837830 後ϋ蝕刻在該半導體晶圓中對應於該罩幕用墊之該移 除預定寬度的部分，所以移除—因該雷射光照射所產生之 受損層’以及並且’相對於該#個別積體電路分割該半導 體晶圓； -黏著墊黏附步驟，其中在實施該電漿切割製程後 由覆盖該罩幕用墊之上面將—黏著墊黏附至該半導體晶 圓’同#使用該黏著墊，以便在已個別分割該等半導 片之狀況下握持該等半導體晶片；以及 曰曰 一電路保護墊移除步驟，用以在 後，從該半導體晶圓移㈣= 4墊黏附步驟 2·如申請專利範圍第丨項之半導體 Π將在實施該晶圓背面研磨步驟後之機械研磨二ί 為一標的時，藉由一恭將4 *丨制 （疋 產生之-處理變化層 〜程㈣該機械研磨操作所 二範圍第1項之半導雜晶片之製造方法，其 Τ 田使用 具有一晶粒黏菩膜夕杜η匕批 時，在該罩幕用塾黏附步以:曰做為該罩幕用墊 導體晶圓之背面方式黏附該罩幕使用;— 4.如申請專利範圍第！項之半導體 中」在該電聚切割步驟前，實施-用以擴大談Γ罩幕用執 製程。 彻口寬度之初步電漿餘刻 其 5·如申請專利範圍第4 中，在該初步電漿蝕刻製 項之半導體晶片之製造方法 耘中使用氧氣或一含氧氣體 97108006 28 200837830 6.如申請專圍第3項之半導體晶狀製造方法，直 中，該黏著墊黏附步驟包括用以藉由覆蓋該樹脂塾之 上巧黏附該霉占著墊之第-㈣墊黏附步u以在實 施該苐一黏著墊黏附步驟後鬆開與該黏著塾結合之該樹 ' 脂墊之樹脂墊鬆開步驟；以及一用以在實施該樹脂墊鬆開 步驟後藉由覆蓋該晶粒黏著膜之上面來黏附一黏著墊之 弟一黏者塾黏附步驟。
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US20100022071A1 (en) 2010-01-28

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