TW200837168A - Heat resistant masking tape and usage thereof - Google Patents

Heat resistant masking tape and usage thereof Download PDF

Info

Publication number
TW200837168A
TW200837168A TW096147094A TW96147094A TW200837168A TW 200837168 A TW200837168 A TW 200837168A TW 096147094 A TW096147094 A TW 096147094A TW 96147094 A TW96147094 A TW 96147094A TW 200837168 A TW200837168 A TW 200837168A
Authority
TW
Taiwan
Prior art keywords
meth
heat
acrylic acid
acrylate
masking tape
Prior art date
Application number
TW096147094A
Other languages
English (en)
Inventor
Yorinobu Takamatsu
Rina Mawatari
Yuka Uchida
Masaru Shinohara
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200837168A publication Critical patent/TW200837168A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68345—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during the manufacture of self supporting substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/83005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
    • H01L2224/83013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/85005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/85048—Thermal treatments, e.g. annealing, controlled pre-heating or pre-cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2878—Adhesive compositions including addition polymer from unsaturated monomer
    • Y10T428/2891—Adhesive compositions including addition polymer from unsaturated monomer including addition polymer from alpha-beta unsaturated carboxylic acid [e.g., acrylic acid, methacrylic acid, etc.] Or derivative thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

200837168 九、發明說明： 【發明所屬之技術領域】 本發明係關於耐熱性遮蔽材料及其使用。 【先前技術】 一般而言，包含襯層及黏合層（含有丙烯酸系聚合物作 為形成於襯層上之主要組份）之黏合帶用於各種目的。丙 烯酸系黏著劑通常具有優良耐候性，且在丙烯酸系黏著劑 交聯之情況下，其變得有可能具備耐熱性。 父聯型丙烯酸系黏著劑之一實例揭示於美國專利第 3,284,423號之說明書中。此交聯型丙烯酸系黏著劑含有 (a) 35重量％至75重量％之具有6至15個碳原子之丙烯酸 酉旨，（b) 10重量％至60重量％之丙烯酸甲g旨或丙烯酸乙醋， ⑷0.1重量％至10重量％之酸組份，諸如（甲基）丙烯酸、衣 康酸或丁烯酸，及（d) 〇.1重量％至1〇重量％之甲基丙烯酸 縮水甘油S旨’且可在室溫下或在受熱時發生自交聯。結 果，交聯型丙烯酸系黏著劑可具有内聚力及吸持力，且在 问溫下具有足夠高的黏著力。較佳地，甲基丙 油醋以丨重量%至3重量%之量存在，由此向上述交= 烯酸系黏著劑賦予所要内聚力。 此外，日本專利第2,955,095號揭示一種用於表面保護薄 膜之黏著劑，其包含自使（甲基）丙烯酸醋單體與含有料 :可共聚合單體共聚合而獲得之共聚物，該共聚物藉由： ^子具有兩個或兩個以上環氧基之環氧化合物^如= 衣虱丙基蜮或聚環氧丙基胺)而交聯，其中該黏著劑在交 127236.doc 200837168 聯後具有〇·8至4.0 kgf/cm2之10%模數。其描述將該黏著劑 用於保護樹脂板之表面。其進一步描述，其藉由將黏著劑 之模數調整至0.8 kg/cm2或0.8 kg/cm2以上而允許自樹脂板 高速釋離具有黏著劑之保護薄膜。 美國專利第3,729,338號之說明書揭示一種自黏式黏合 帶，其係藉由將藉由將少量催化劑及/或多官能性化合物 添加至低分子量共聚物中而製備之材料塗佈至基底材料且 經加熱固化該材料而產生，該低分子量共聚物包含（a)85重 量％至99.95重量％之具有4至12個碳原子之丙烯酸烷酯， 及（b)0.05至15重量份的可共聚合單體，其除雙鍵外亦具有 一或多個反應性基團。此文獻描述，此黏合帶具有良好黏 附性及良好耐熱性。將曱基丙烯酸縮水甘油酯及（甲基）丙 烯酸用作具有反應性基團之單體，且將諸如辛基磷酸或對 甲苯磺酸之酸及諸如氣化鋅或二丁基二月桂酸錫 (dibutyltin dilaurate)之金屬化合物用作催化劑。 曰本未審查專利公開案（Kokai)第2005-5 3975號揭示一種 耐熱性遮蔽帶，其包含：（1)耐熱性襯膜層，及（2)安置於 該耐熱性襯膜層上之黏合層，其中該黏合層包含由使包含 具有S 4至15個石反原子之烧基之（甲基）丙稀酸烧基醋、甲基 丙烯酸縮水甘油酯及（甲基）丙烯酸之單體混合物聚合及交 聯而產生之聚合物，甲基丙烯酸縮水甘油酯存在之量為單 體總重量之2重量％至13重量％，且（甲基）丙烯酸存在之量 為單體總重量之1重量％至7重量。/〇。具體言之，丙烯酸正 丁酯主要用作（甲基）丙烯酸烷基酯。 127236.doc 200837168 然而，當使用環氧模塑化合物（EMC)之封裝試驗以使用 包含在上文提及之專利文獻中描述之黏著劑及引線框架之 上述黏合帶的製造晶片級封裝（CSP)之製程進行時，在以 下意外條件下可能出現使用之不便利性。假定上述黏著劑 並不經受在CPS中遭遇之高於1 5〇°C之溫度，且因此其在高 溫下具有不足之黏附力。又，在加熱固化Emc之步驟之後 難以釋離遮蔽帶，此係因為黏著劑與EMC之間存在高親和
力。難以自EMC釋離遮蔽帶，且因此黏著劑殘餘物留在封 裝上。在此情況下，清潔封裝之步驟變得有必要，從而導 致高製造成本。 【發明内容】 + 2用於（諸如）製造晶片級封裝中所使用之引線框架的遥 2帶等之領域中，需要能夠耐受愈加嚴苛之條件之黏合 贡。舉:列而言’需要黏著性遮蔽帶，其具有足夠初始黏附 f生及黏者力及内聚力以獲得可重定位性，在高溫下長時間 熱處理及f漿處理時具有穩定#附強度，且稍後可容易地 釋離而不會留下黏著劑殘餘物。本發明之目標為提供滿足 此等要求之遮蔽帶。 八 例中，本發明提供一種耐熱性遮蔽帶，其包 耐熱性襯膜層，及（2)安置於該耐熱性襯膜層上之 25。= σ層’其中該黏合層包含溶解性參數（SP)值在 下為2〇MPa°.5或2晴，5以下之聚合物。 含在二耐1%例中，本發明提供-種耐熱性遮蔽帶，其包 熱性襯膜層’及⑺安置於該耐熱性襯膜層上之 127236.doc 200837168 壓敏性黏合層，其中該黏合層包含自使包含（甲基）丙烯酸 烷基酯、（f基）丙烯酸及尹基丙烯酸縮水甘油酯之單體混 合物聚合而得到之聚合物，其中（甲基）丙烯酸烷基酯之均 聚物在25°C下之溶解性參數（SP)值為19 Μρ,·5或19 Mpa〇.5
以下，其中（甲基）丙烯酸烷基酯存在之量為以（γ基）丙烯 酸烷基醋與（甲基）丙烯酸之總重量之1〇〇重量份計的卯至的 重里伤，其中（甲基）丙烯酸存在之量為以（甲基）丙烯酸烷 基酯與（甲基）丙烯酸之總重量之1〇〇重量份計的丨至1〇重量 伤，且其中甲基丙烯酸縮水甘油酯存在之量為以1莫耳（甲 基）丙烯酸計之〇·25至2.5莫耳。 在另-實施例中，本發明提供—種用於產生晶片級封裝 之方法包含以下步驟：層壓遮蔽帶與引線框架，將半 導體晶片安裝於該引線框架上，電連接該晶片，及使用包 覆成型化合物來樹脂密封該封裝，其中該遮蔽帶為上述财 熱！·生遮蔽τ，且該包覆成型化合物為環氧模塑化合物 【實施方式】 根據本發明之具有黏合層之耐熱性遮蔽帶可為可重新定 位遮蔽帶’在應用後具有足夠黏著強度，不 處理或電漿處理之作用而锩碰★ ^、、 乍用而釋離或增加黏著強度，且 用後釋離而無殘餘黏著劑。 當在製造使用引線框架之晶片級封 ，，CSP’，）之製程中使用又中柄為 衣乳杈塑化合物（下文中稱為”EMC，，、 用作至引線框牟夕、疮> 木之遮蔽帶以便封農時，$需要清潔封裝之 127236.doc 200837168 步驟’此係因為报少（若存在）的黏著劑殘餘物留在環氧模 塑化合物’’EMC”上。 ' 如本文中所使用，術語，，（甲基）丙稀酸酿”意謂丙稀酸酿 或曱基丙烯酸S旨，且術語”（曱基）丙稀酸，，意謂丙稀酸或甲 基丙烯I。此外，術語”耐熱性遮蔽帶，，應廣泛地解釋為涵 蓋薄膜、薄片或帶。 / 現將藉助於較佳實施例來闡釋本發明之耐熱性遮蔽帶。 -般技術者應瞭解，本發明並不限於該等特定描述之實施 例0 本發明之对熱性遮蔽帶包含耐熱性概膜層及安置於該而 熱性襯膜層上之壓敏性黏合層。該黏合層安置於耐熱性福 膜層之至^表面的至少—部分上。耐熱性襯膜層支樓索 黏合層。耐熱性襯膜層可僅在其—全部表面或部分表面』 支撐丙烯酸系黏合層’或可在其全部表面或部分表面之两 側上支撐黏合層。通常，視遮蔽帶在使用時遭遇之溫度而 適當選擇用於耐熱性襯臈層之材料。舉例而言，當在處理 期間遭遇之溫度低於時，可選擇聚對苯二甲酸乙二 MPET)薄臈作為較佳的耐熱性襯膜層。當處理溫度為 1 70 c至200 C時’較{圭而f熱性襯膜層4聚醚醯亞胺、聚醚 石風、聚奈二f酸乙二醋或聚苯硫喊之薄膜。此外，當處理 -度為約2GG°C或更高時，較佳耐熱性襯膜層為聚㈣ 晒、聚酿胺醯亞胺或聚醯亞胺之薄膜。特定考慮到可用性 及化學穩定性’ PET、聚萘二甲酸乙二醋、聚苯硫醚及聚 醯亞胺較佳，此係因為其具有高通用'杜。考慮到處置及可 127236.doc -10- 200837168 用性’耐熱性襯膜層較佳具有約1 pm至約250 μπι之厚度。 黏合層包含溶解性參數（SP)值在25t下為2〇 MPaG.5或20 MPaG·5以下之聚合物。 I占合層包含自使單體混合物聚合及交聯而得到之聚合 物’該單體混合物含有： 90至99重量份的（甲基）丙烯酸烷基酯（a)，其中均聚物之 溶解性參數值在25°C下為19 MPa0.5或19 MPa0.5以下， 1至10重量份的（甲基）丙烯酸（b)，及 甲基丙烯酸縮水甘油酯（c)，其量為以1莫耳（甲基）丙烯 酸（b)計之0.25至2.5莫耳。單體混合物中（甲基）丙烯酸烷基 酯與（甲基）丙烯酸之總重量為i 00重量份。 當均聚物之溶解性參數（SP)值在25°C下為19 MPaG.5或19 MPa以下之（甲基）丙烯酸烷基酯之含量為9〇至99重量份 時’構成黏合層之聚合物在25°C下之溶解性參數（SP)值為 20 MPa0’5或20 MPa0.5以下。另一方面，EMc在25dc下之溶 解性參數（SP)值通常為2〇.〇至26.0 MPa0·5。一般而言，具 有較接近SP值之聚合物具有高親和力，而具有不同sp之聚 合物具有低親和力。有可能藉由減小構成黏合層之聚合物 的SP值來改良黏著劑自EMC之可釋離性。當單體組合物經 選擇以將SP值調整至20 MPaG.5或20 MPaG.5以下時，黏合層 中之聚合物可在熱處理後展現黏合層自EMC之足夠的可釋 離性。 如本文中所使用，SP值意謂在25t下量測之SP值。 ”25 C下之溶解性參數（SP)值（δ)π係由以下等式定義： 127236.doc -11 - 200837168 δ = (ΔΕν/ν)0·5 其中ΑΕν表示莫耳汽化能量，且V表示莫耳體積。根據 Fedors法，可僅藉由化學結構來計算SP值（參見，例如，R. F. Fedors，A Method for Estimating Both the Solubility Parameters and Molar Volumes of Liquids，Polym. Eng. Sci·，14 (2)，第147頁，1974)。實例中展示了特定計算實 例。 均聚物在25°C下之溶解性參數（SP)值為19 MPa0.5或19 MPaG·5以下之（甲基）丙烯酸烧基酯（a)為（例如）丙烯酸2_乙 基己酯（其均聚物之SP= 18.9 MPa0.5)、丙烯酸異辛醋（其均 聚物之SP= 18·9 MPa0 5)、丙烯酸十二烷酯（其均聚物之sp = 18.7 MPaG·5)，或丙烯酸異冰片酯（其均聚物之sp= 18 6 MPa0·5)。丙烯酸正丁酯不適用，因為其sp值為2〇〇 MPa0.5 〇 (甲基）丙烯酸（b)存在之量為以（甲基）丙烯酸烷基酯（a)與 (甲基）丙稀酸（b)之總量的1〇〇重量份計之1至1〇重量份。舉 例而言，丙烯酸之SP值為26.4,且當單體化）之量超過1〇重 量份時，聚合物之SP值增大。另一方面，當單體(b)之量 小於1.0重量份時，歸因於（曱基）丙稀酸（b)之叛基與甲基 丙稀酸縮水甘油酯（C)之縮水甘、、占装+ 广士 视不甘，由基之間的反應之交聯較不 可能發生，且耐熱性劣化，且糸 口為不良的内聚力而在使用 後留下黏著劑殘餘物。 甲基丙烯酸縮水甘油酯旧在A 3 «^曰存在之f為以1莫耳（曱基）丙 烯酸（b)計之0.25至2.5莫耳。各旦、A , 士 天开 备里過小時，黏著劑之耐熱 127236.doc -12- 200837168 性變低，且黏著劑殘餘物可能在熱處理之後留在黏附體 上。另一方面，當（甲基）丙烯酸（b)之量過大時，可能在使 用期間因為至黏附體之黏附性低而發生分層。考慮到黏合 層之内聚力與至黏附體之黏附的良好平衡，甲基丙烯酸縮 水甘油酯為如上描述之狀態。 構成黏著劑之聚合物的單體混合物除上述單體（a)、（b) 及（c)外亦可含有其他單體，只要不對本發明之效應施加不 利衫響即可。具體言之，其他單體包括（例如）丙烯酸8 烷基酯，諸如丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸異辛 酉曰丙烯酸乙基己酯、丙烯酸2-甲基丁酯、丙烯酸異戊 酉曰或丙烯酸正辛酯；及甲基丙烯酸Cm烷基酯，諸如甲基 丙烯§文辛基酯、甲基丙烯酸2-乙基己酯、甲基丙烯酸十二 烷酯及/或甲基丙烯酸正辛酯。其實例進一步包括（甲基）丙 烯酸烷基酯，諸如（甲基）丙烯酸甲酯、甲基丙烯酸乙酯、 (甲基）丙烯酸十八烷醯酯、（甲基）丙烯酸環己酯或丙烯酸 月桎ί曰，（甲基）丙烯酸羥基烷基酯，諸如（曱基）丙烯酸羥 基乙S曰（甲基）丙烯酸羥基丙酯或（甲基）丙烯酸羥基丁 酉曰，及極性單體，諸如丙烯醯胺、（甲基）丙烯酸二甲基胺 基乙S曰、Ν-乙烯基吡咯啶酮、丙烯酸2_羥基苯氧基丙 酉曰一甲基胺基丙基醯胺、Ν，Ν-二甲基丙烯醯胺、異丙基 丙烯醯胺或羥甲基丙烯醯胺。 聚口物之耐熱性及黏著劑殘餘物之防止可展現為規因於 足夠又聯之向内聚力。因此，有必要充分執行單體（b)之羧 基/、單體（c)之縮水甘油基之間的反應。通常，在聚合期 127236.doc -13- 200837168 間’縮水甘油基打開環以形成與羧基之交聯。此外，可執 行後固化以增加在聚合後的交聯度。可在（例如）6(rc至 1 〇〇°C之溫度下執行後固化步驟歷時若干小時至3天。亦有 可能藉由混合單體混合物與固化促進劑而省去後固化步 驟。以磷為主之固化劑可用作固化促進劑，且通常以單體 總重量計以0.05至5.0重量％之量使用。適用的以磷為主之 固化劑包括三苯基膦（TPP)。 此外，構成黏合層之聚合物較佳在25t：或8(rc下分別具 有為0.1X105至l〇.〇xl〇5(Pa)之彈性模數，以展現至黏附體 之足夠的初始黏附，及在使用後自黏附體的可釋離性。當 彈性模數過大時，至黏附體之初始黏附可能變得不夠。另 方面，s彈性模數過小時，内聚力減小，且黏著劑殘餘 物可能在釋離之後留在黏附體上。具體言之，可考慮到彈 性模數在增加（甲基）丙烯酸的量及/或甲基丙烯酸縮水甘油 酯與（甲基）丙烯酸酯之比增加時增加來調整彈性模數。較 佳地，8(TC下之損耗角正切（tan s)較佳小於〇5。當損耗角 正切在以上範圍㈣，通常不會留下黏著劑殘餘物，此係 因為存在足夠交聯，亦即，高内聚力。 本文中所使用，彈性模數”意謂如使用動態黏彈性計 以剪切模式在以下條件下所量測的儲存彈性模數G，：
Hz之頻率，在鐵至⑽。c範圍内的溫度，及5umin之溫 升速率X，知耗角正切（tan δ)意謂在量測中獲得的 儲存彈性模數（G")/儲存彈性模數（G,)。 黏合層較佳具有〇.5至100 μΓη之厚度。當黏合層具有小 127236.doc -14- 200837168 於0.5 μιη之厚度時，所得薄膜在與黏附體接觸時很難與黏 附體貼合，且很可能在使用期間釋離。另一方面，當黏合 層具有大於100 μιη之厚度時，在塗佈黏合層之後難以充分 移除溶劑，或者在熱處理黏合層時可能出現發泡。 在耐熱性襯膜層與黏合層之間的黏附（錨定特性）不良之 情況下，在自黏附體釋離耐熱性遮蔽帶時有時會在耐熱性 襯膜層與黏合層之間出現分層。在該情況下，耐熱性襯膜 層之一表面可使用習知技術經受表面處理以易於結合。表 面處理之較佳實例包括物理處理，諸如電暈放電處理、火 焰處理、電漿處理或紫外線照射處理；或濕式化學處理。 電暈放電處理尤其較佳，此係因為經受電暈放電處理之耐 熱性襯膜層可購得且容易得到。 在未進行表面處理或甚至在表面處理後錯定特性仍不良 之情況下，可進行底塗處理以進一步改良錨定特性。底塗 處理係指在耐熱性襯膜層上提供對耐熱性襯膜層及黏合層 皆具有優良黏附性之塗層（底塗層）的處哩，且黏合層可提 供於底塗層上。在該情況下，底塗層之厚度較佳為〇1至2 l·1111。¥底塗層之厚度為0.1 μπι或〇 · 1 pm以下時，不可預期 其效應。另一方面’當厚度為2 μηι或2 μιη以上時，溶劑或 化學物可能滲透，且可能出現耐熱性遮蔽帶之分層及對黏 附體之污染。 耐熱性襯膜層之與上面安置有黏合層之側相對之表面可 經文釋離處理。當該相對側表面經受釋離處理時，本發明 之耐熱性遮蔽帶可以捲帶之形式儲存。關於用於釋離處理 127236.doc -15- 200837168 之釋離劑，可使用（例如）以聚矽氧為主之釋離劑、以氟為 主之釋離劑、具有長鏈烷基之（甲基）丙烯酸系釋離劑及具 有長鏈烷基之以乙烯基醚為主之釋離劑。 只要不會不利地影響本發明之目標及效應，黏合層可含 有添加劑，諸如抗氧化劑、紫外吸收劑、填充劑（例如， 無機填充劑、導電性顆粒或顏料）、潤滑劑（諸如蠟）、增黏 劑、增塑劑、固化促進劑及/或螢光染料。 接下來，將闡釋用於製備上述耐熱性遮蔽帶之方法之一 實例。 首先，使_L it單體混合物聚合。f體混合物可在基於偶 氮化合物或過氧化物之聚合引發劑之存在下發生自由基聚 合。作為聚合方法’可使用諸如溶液聚合方法、乳液聚合 方法、懸浮液聚合方法及本體聚合方法或其類似方法之; 知聚合方法。在此等方法中，溶液聚合方法尤其較佳，此 係因為黏合層可藉由在聚合後塗佈及㈣含有所得聚合物 之溶液而容易地形成於耐熱性襯膜層上。溶液聚合通常在 氮氣氣氛下，在贼至8(TC之聚合溫度下進行，聚合時間 為124小時。將如上文所述而製備之聚合物溶解於有機 溶劑中以製備塗佈溶液。作為有機溶劑，通常可使用乙酸 乙醋、甲基關（MEK)、f苯或其混合物。接著，藉由模 塗法、刮刀塗法、棒塗法或其他習知塗佈方法將塗佈溶液 均勾地塗佈於财熱性襯膜層上。由於大多數塗佈溶液僅係 由上述聚合物及溶劑製成，因此其可容易地實現均句塗 佈。接著，藉由乾燥塗佈溶液連同耐熱性襯膜層而移除溶 127236.doc -16- 200837168 劑。接著，藉由將耐熱性襯膜層上之聚合物加熱而使聚八 物交聯。可藉由在低於100艺或1〇〇。(：以下之溫度下來進行 加熱而使乾燥步驟亦充當交聯步驟。或者，可在乾燥步= 期間預先執行交聯，且接著在額外加熱步驟期間另行 交聯。藉由聚合物中之縮水甘油基與羧基之間的反應發^ 父聯。然而，交聯不必完全完成。舉例而言，使用後之足 夠的黏結強度及可釋離性可藉由在6(rc至〗〇〇它之溫度下 進行反應歷時若干小時至約3天而獲得。當纟單體混合物 聚合之後與固化促進劑（諸如以磷為主之固化促進劑）混合 且促進交聯時，不必執行上述交聯步驟（後固化）。如上所 述’可製備本發明之耐熱性遮蔽帶。 當欲藉由模塑而覆蓋引線框架上之半導體晶片時，本發 明之耐熱性遮蔽帶尤其適用作層壓至銅基板或鎳鈀合金基 板以防止環氧模塑化合物（EMC)洩漏之遮蔽帶。圖i展示 四邊爲平無引腳（QFN)晶片級封裝之製造過程流程圖^一 實施例。首S ’製備在耐熱性襯膜層2上具有黏合層3之本 發明之财熱性遮蔽帶丨。層壓耐熱性遮蔽帶丨與引線框架 11，以便引線框架11之背側與遮蔽帶丨之黏合層3接觸（步 驟⑷)。因此’可防止模塑化合物在稍後步驟中自引線框 架11經由引線框架11之開口而流至引線框架u之背側。 接下來，藉由電漿處理（諸如，氬電漿、氬/氧電漿、氮/ 風電漿、氬/氮電漿）清潔引線框架u，以便移除黏附至引 線框架11上之污染物（步驟⑻）。此時，儘管電漿經由引線 框架之開口轟擊本發明之遮蔽帶丨之黏合層3，但遮蔽帶i 127236.doc -17- 200837168 之黏合層3不會釋離，或者不會發生黏著強度之過度增 加0 接下來，將模-結合帶黏著劑12塗佈於引線框架丨丨上， 將半導體晶片13安裝於其上，且藉由加熱來固化模_結合 黏著劑12(步驟（c))。模-結合帶12通常為以環氧樹脂為主 之熱固性黏著劑，且可藉由在18(rcs24(rc之溫度下處理 約數分鐘至1小時而固化。 f 在如在步驟（b)中執行之電漿清潔之後，執行線結合（步 驟（d))。線結合通常用以將晶片上之電極襯墊藉由諸如金 線之金屬線電連接至引線。線結合通常藉由將諸如金線之 金屬線藉由（例如）火花熔融及將其熱壓至晶片上之電極上 而執行。在此過程中，可將層壓體自18〇〇c加熱至21〇它， 且在某些情況下，可將其自200t：加熱至240°C。 接著，藉由使用包覆成型化合物來執行樹脂密封步驟 (步驟（e))。包覆成型化合物為（例如）以環氧樹脂為主之熱 固性樹脂，亦即，環氧模塑化合物（EMC)。藉由將流體化 樹脂加熱至約16(TC至24(TC而將其固化為密封樹脂14。 接下來’釋離附著至引線框架U之遮蔽帶1(步驟⑴）。 本發明之遮蔽帶1之特性未因高溫熱處理及電漿處理而降 低’且遮蔽帶保持穩定的黏著強度。結果，其並未分層且 不會引起黏著強度之過度增加。歸因於對於釋離之足夠低 的黏著強度及黏著劑之足夠高的内聚強度，其不會在釋離 時於引線框架11上留下任何黏著劑殘餘物。 在釋離遮蔽帶1之後，可對所得主體執行常用程序。舉 127236.doc -18· 200837168 例而言，將其經焊料電鍍、固定至分割帶上，且分割為個 別封裝。 實例 將藉助於實例來闡釋本發明。一般技術者應瞭解，本發 ^ 明並不限於該等實例。 實例1至29(Εχ· 1至29)及比較性實例1至7(Comp. 1至7) 丙烯酸系共聚物之合成 藉由使在乙酸乙酯溶劑中具有50重量％之單體濃度的單 ( 體溶液共聚合而製備具有如在下表1及2中所示之以下組成 比的丙烯酸系共聚物。作為引發劑，偶氮雙（2，4_二甲基戊 腈）（由 Wako Pure Chemical IndustHes，⑽·製造之 v_65(商 標名))使用之量為以單體重量計之0.25重量％。在以氮淨 化反應裔後，在55 C下在水浴中執行聚合歷時24小時。
127236.doc -19- 200837168 表1 :丙烯酸系聚合物之組成 組成 重量份 莫耳比 GMA/AA 共聚物 之SP值 (MPa05) 交聯 之前 交聯 之後 分子量 Mw (χΙΟ5) Mw/Mn PSA1 BA:AA:GMA 98.0:2.0:7.9 2.0 20.2 20.3 7.8 6.1 PSA2 2EHA:AA:GMA 98.0:2.0:7.9 2.0 19.2 19.3 8.6 8.3 PSA3 2EHA:AA:GMA 96.0:4.0:7.9 1.0 19.3 19.5 10.2 9.8 PSA4 2EHA:AA:GMA 94.0:6.0:7.9 0.7 19.4 19.6 8.0 9.0 PSA5 2EHA:TBA:AA:GMA 76.0:20.0:4.0:7.9 1.0 19.2 19.4 10.9 8.7 PSA6 2EHA:TBA:AA:GMA 68.0:30.0:2.0:7.9 2.0 19.1 19.2 8.0 7.3 PSA7 2EHA:TBA:AA:GMA 66.0:30.0:4.0:7.9 1.0 19.2 19.4 9.6 8.7 PSA8 2EHA:TBA:AA:GMA 56.0:40.0:4.0:7.9 1.0 19.2 19.4 9.8 8.7 PSA9 2EHA:LA:AA:GMA 59.0:39.0:2.0:7.9 2.0 19.0 19.1 8.0 7.9 PSA10 IOA:IBXA:AA:GMA 80.0:16.0:4.0:7.9 1.0 19.3 19.5 10.5 10.2 PSA11 2EHA:AA:GMA 94.0:6.0:4.0 0.3 19.4 19.4 8.2 6.0 PSA12 2EHA:AA:GMA 92.0:8.0:5.9 0.4 19.5 19.7 8.7 7.5 表2 :材料 共聚物之SP值(MPaG·5) 丙烯酸丁酯(BA) 20.0 丙烯酸2-乙基己酯(2EHA) 18.9 丙烯酸異辛酯(IOA) 18.9 丙烯酸第三丁酯(TBA) 18.5 丙烯酸月桂酯(LA) 18.7 丙烯酸異冰片酯(ffiXA) 18.6 丙烯酸(AA) 26.4 甲基丙稀酸縮水甘油酿(GMA) 22.0 溶解性參數 根據Fedors之方法，可僅藉由化學結構來計算SP值（請 參見，R. F. Fedors，A Method for Estimating Both the Solubility Parameters and Molar Volumes of Liquids, Polym. Eng. Sci·，14 (2)，第 147 頁，1974)。具體言之，藉 由表3及4中所示之程序來測定構成黏合層之聚合物的SP 值0 -20- 127236.doc 200837168 表3 :均聚物之SP值之計算實例 基團 汽化能量莫耳體積
Aei Δνί 單位 Aei Δνί (cal/mol) (cal/mol) (cal/mol) (cal/mol) 丙烯酸正丁酯 COO 4300 18 1 4300 18 ch3 1125 33.5 1 1125 33.5 ch2 1180 16.1 4 4720 64.4 CH 820 -1 1 820 -1 ZAei 10965 Σδνί 114.9 (ZAei/XAvi)0·5 9.8 (cal/cm3)0 5 (ZAei/ZAvi)0·5 20.00 MPa0 5 丙烯酸2-乙基己酯 COO 4300 18 1 4300 18 ch3 1125 33.5 2 2250 67 ch2 1180 16.1 6 7080 96.6 CH 820 _1 2 1640 -2 ZAei 15270 Σδνί 179.6 (ZAei/IAvi)0·5 9.2 (cal/cm3)0 5 (ZAei/ZAvi)0·5 18.9 MPa05 丙烯酸 COOH 6600 28.5 1 6600 28.5 ch2 1180 16.1 1 1180 16.1 CH 820 -1 1 820 -1 Tg>25 C - 4 2 8 主鏈 之原 子數 ZAei 8600 Σδνί 51.6 (EAei/lAvi)0·5 12.9 (cal/cm3)0 5 (ZAei/XAvi)0·5 26.4 MPa0 5 127236.doc -21 - 200837168 表3(續） 基團 汽化能量 莫耳體積 Aei Δνί 單 Aei Δνί (cal/mol) (cal/mol) 位 (cal/mol) (cal/mol) 曱基丙烯酸二 COO 4300 18 1 4300 18 縮水甘油西旨 ch3 1125 33.5 1 1125 33.5 ch2 1180 16.1 3 3540 48.3 CH 820 -1 1 820 -1 C 350 19.2 1 350 -19.2 D 800 3.8 1 800 3.8 750 18 1 750 1.8 [Aei 11685 Σδνί 101.4 (Z6ei/I5vi)0·5 10.7 (cal/cm3)0 5 (Z5ei/X5vi)05 22.00 MPa0 5 甲基丙烯酸2-羥基-3-丙烯醯氧基丙酯（丙烯酸與甲基丙烯酸縮水甘油酯之交聯反應產物) COO 4300 18 2 8600 36 ch3 1125 33.5 1 1125 33.5 ch2 1180 16.1 4 4720 64.4 CH 820 -1 2 1640 -2 C 350 -19.2 1 350 -19.2 OH 5220 13 1 5220 13 Tg>25 C 4 2 8 主鏈 之 原子 數 XAei 21655 Σδνί 133.7 (lAei/IAvi)0·5 _12.7 (cal/cm3)0 5 (XAei/XAvi)0·5 丨 26.0 MPa0·5 127236.doc 22- 200837168 表4 :黏著劑聚合物之SP值之計算實例 .0.0.9.9 8.0.3.5. PSA1(交聯之前） 重量份 Mol% Mol Σδνί BA 98.0 90.18% 0.766 9887.8 103.6 AA 2.0 3.27% 0.028 281.4 1.7 GMA 7.9 6.55% 0.056 765.7 6.6 ZAei 10934.8 0.849 Σδνί 111.9 (ZAei/ZAvi)0·5 9.9 (cal/cm3)05 (ZAei/lAvi)0·5 20.2 MPau' PSA1(交聯之後） 重量份 Mol% Mol ZAei Σδνί 93.23% 0.00% 3.38% 3.38% 0.766 0.000 0.028 0.028 10223.2 0.0 395.3 732.5 107.1 0.0 3.4 4.5
BA
AA
GMA 交聯反應產物 ZAei 11351.0 0.821 Χδνί 115.1 (XAei/EAvi)0·5 9.9 (cal/cm3)05 (XAei/XAvi)0·5 1 20.3 MPa0^ PSA2(交聯之前）重量份 Mol% Mol ZAei Σδνί
2EHA AA GMA 0 0 9 82.7. 9 86.45% 4.51% 9.03% 0.533 0.028 0.056 13202.4 387.8 1055.3 155.3 2.3 9.2 XAei 14645.5 0.616 Χδνί 166.8 ([△ei/IAvi)05 9.4 (cal/cm3)05 (XAei/IAvi)0*5 1 19.2 MPau^ PSA2(交聯之後）重量份 Mol% Mol ΣΔβί Σδνί 2EHA AA GMA 交聯反應產物 .0.0.9.9 8.0.3.5. 9 90.55% 0.00% 4.72% 4.72% 0.533 0.000 0.028 0.028 13827.7 0.0 551.9 1022.7 6 0 8 3 2.0.4.6. 6 XAei 15402.2 0.588 Σδνί 173.7 (ZAei/IAvi)0·5 9.4 (cal/cm3)05 (XAei/IAvi)0*5 | 19.3 交聯之前與交聯之後的SP值之間的比較展示於表4中， 其證實兩種情況下的值幾乎相同。 分子量之量測 藉由凝膠滲透層析法（GPC)在以下條件下量測重量平均 127236.doc -23 - 200837168 分子量Mw、數量平均分子量Μη及多分散性Mw/Mn。 裝置：HP-1090 SERIES II 稀釋劑：四氫呋喃（THF) 管柱：PLgel MIXED-Ax2(300 mmx7.5 mm，内徑（i.d·): 5 mm) . 烘箱溫度：室溫（25°C) 流動速率：1 ·〇 mL/min 偵測器：折射率 C 樣本濃度：0.1% (w/w) 注入體積：50微升 校正標準物：聚苯乙烯 遮蔽帶之製備 如以下表5所示，藉由混合100重量份固含量的上述聚合 物與預定量的三苯膦（TPP)而製備黏著劑溶液。將所有溶 液之濃度調整至固含量於甲苯中為30重量％之濃度。以黏 著劑溶液塗佈25 μηι厚的聚醯亞胺薄膜（由Du Pont-Toray ί K Co·，Ltd·製造之Kapton 100V)，在烘箱中於65°C下乾燥5分 鐘，且接著將其層壓至經聚矽氧處理之50 μηι厚的聚對苯 二甲酸乙二酯（PET)薄膜（由Teijin Dupont Co. Ltd·製造之 Purex A50)。將黏著劑之塗層厚度調整至在乾燥後為5 μηι。此外，如表5所示，在烘箱中於6 5 °C下執行後固化歷 時3天，以便相對於一些帶促進交聯反應。 黏彈性之量測 以上文獲得之溶液樣本塗佈經聚矽氧處理之50 μιη厚的 127236.doc -24- 200837168 聚對苯二甲酸乙二酯（ρΕΤ)薄膜（由Teijin DUp〇nt c〇. Ud 製造之Purex A50) ’且接著在烘箱中於65°c下乾燥5分鐘以 形成5 厚的黏合層。使用由Rhe〇metrix &製造之 ARES，以剪切模式在以下條件下量測儲存彈性模數（^)、 儲存彈性模數（G,1)及損耗角正切δ)(儲存彈性模數 f V儲存彈性模數（G，)）： U Hz之頻率、在_8代至1〇〇。〇 耗圍内的溫度，及rc/min之溫度上升速率。又，將玻璃 轉移溫度(Tg)敎為損耗角正切（_ s)之峰值溫度。將 25 c或8Gt：下之儲存彈性模數與8(rc下tan δ的值進行比 較。在足夠交聯度之情況下，仏“的值小於〇 5。 表5 ·遮蔽帶之評估結果
127236.doc -25 200837168
表5(續）
在上述諸表中，比較性實例1至4(Comp· 1至4)在聚合物 組成方面並不在本發明之範疇内，此係因為使用了 sp值為
20.0的正丁基單體。又，比較性實例5至7(cornp· 5至7)在 丙烯酸系聚合物未交聯之實情方面並不在本發明之範_ 内’此係因為未執行後固化，且未添加固化促進劑。此實 情與下文描述之tan δ為0.64或0.64以上且實例1至25(Εχ· 1 至25)之經交聯聚合物之tarl δ小於〇·5之實情形成對比。 咸信所有樣本（實例及比較性實例）可充分展現初始黏著 強度，此係因為Tg為25°C或25°C以下且25°C或80°C下之彈 性模數為〇.1\1〇5至1〇xl〇5(Pa)。咸信，當tan δ超過〇·5時， 127236.doc -26- 200837168 交聯度不夠，且因此會留下黏著劑殘餘物。當tan §為ο: 或0.5以下時，交聯度為足夠的，且因此不會留下任何黏 著劑殘餘物。 黏著強度（對銅板）之量測（初始黏著強度及熱處理之後的 黏著強度） 將以上獲得之樣本切開為寬度25 mm之樣本，且將其每 一者藉由往復滾動一次之2 kg滾筒壓附至銅板（由Nippon Tact Κ·Κ·製造之C1100，1.0 mm厚度）。將經壓附之樣本在 至/m下留置20分鐘’且在拉力試驗機（tensil〇n)上量測其 90剝離黏著強度（n/25 mm)。在25°C下以300 mm/min之 量測速率執行該量測。此稱為”初始黏著強度"。在將樣本 壓附至面板，在烘箱中於2〇〇。〇下留置45分鐘，且在室溫 下留置1小時之後，在拉力試驗機上量測9〇剝離黏著強 度（N/25 mm)。此稱為”熱處理之後的黏著強度，，。結果展 示於表6中。 黏著強度（對EMC)之量測 在以上獲得之帶樣本上，在2.0 kgf/cm2之壓力及185°C 之，皿度之條件下熱壓EMC(由Hitachi Chemicals Co·，Ltd·製 造之CEL-9200-HF10)歷時9〇秒。將經壓製樣本在室溫下留 置1小時，且將其切開為寬度為25 mm之樣本，且接著在 25 C下在300 mm/min之量測速率下量測9〇剝離黏著強度 (N/25 mm)。結果展示於表6中。 應用測試 模擬在製造四邊扁平無引腳（qFN)晶片級封裝（csp)中使 127236.doc -27- 200837168 藉由以下過程1至5進 離遮蔽帶時的黏著劑 之銅框架。 引線框架，以使得不 用的弓I線框架應用中所遭遇的條件。 行評估，以便檢查EMC之洩漏及在釋 殘餘物。作為引線框架，使用鍍鎳鈀 步驟1 :將以上獲得之遮蔽帶層壓至 會在其間併入氣泡。 步驟2 :為了模擬模附著環氧黏著劑之熱固化及線結合， 在200°C下對層壓體進行熱處理 歷時10分鐘。
步驟3 ·在 185C 下執行使用 EMC (由 Hitachi Chemicals Co·, Ltd·製造之CEL-9200-HF10)執行之熔融模塑及固化歷時90 秒。 步驟4 :釋離該帶。 步驟5 :藉由顯微鏡觀察引線框架之帶剝離表面。 結果展示於表6中。 127236.doc -28- 200837168 表6 :遮蔽帶之評估結果 PSA 黏著強度(N/25mm) 應用測試 銅板 至EMC EMC之表面 初始 熱處理之後 黏著劑殘餘物 表面粗糙度 Comp. 1 PSA1 3.9 1.5 6.6 許多殘餘物 非常粗糙 Comp. 2 2.2 1.6 6.8 較少殘餘物 粗糙 Comp. 3 0.8 1.0 3.0 許多殘餘物 非常粗糖 Comp. 4 0.3 0.6 1.9 較少殘餘物 粗糙 Comp. 5 PSA2 4.3 1.3 1.4 許多殘餘物 粗糙 Ex. 1 2.2 1.1 1.6 無殘餘物 略顯粗糙 Ex. 2 1.5 0.8 1.3 無殘餘物 略顯粗糙 Ex. 3 0.5 0.7 1.0 無殘餘物 光滑 Comp. 6 PSA3 3.7 1.3 1.3 許多殘餘物 粗糖 Ex. 4 1.9 1.1 1.0 無殘餘物 略顯粗糙 Ex. 5 2.6 1.4 1.5 無殘餘物 略顯粗糙 Ex. 6 0.6 1.0 1.3 無殘餘物 光滑 Ex. 7 0.9 0.9 1.0 無殘餘物 略顯粗糙 Ex. 8 0.4 0.9 1.1 無殘餘物 光滑 Ex. 9 1.5 1.3 1.1 無殘餘物 略顯粗糙 Ex. 10 0.5 0.7 0.9 無殘餘物 光滑 Comp. 7 PSA4 3.6 1.2 2.0 許多殘餘物 略顯粗糙 Ex. 11 1.9 1.1 2.8 無殘餘物 光滑 Ex. 12 1.9 1.2 1.6 無殘餘物 光滑 Ex. 13 0.8 0.7 1.8 無殘餘物 光滑 Ex. 14 PSA5 3.5 1.9 2.5 無殘餘物 光滑 Ex. 15 0.7 1.0 1.8 無殘餘物 光滑 Ex. 16 PSA6 3.3 2.2 2.8 無殘餘物 略顯粗糙 Ex. 17 0.7 1.3 1.4 無殘餘物 光滑 Ex. 18 PSA7 3.3 2.0 2.8 無殘餘物 光滑 Ex. 19 0.6 1.2 2.3 無殘餘物 光滑 Ex. 20 PSA8 3.9 2.3 3.9 無殘餘物 光滑 Ex. 21 0.7 1.0 2.9 無殘餘物 光滑 Ex. 22 PSA9 2.0 0.7 1.1 無殘餘物 略顯粗糙 Ex. 23 0.2 0.4 0.8 無殘餘物 光滑 Ex. 24 PSA10 2.1 1.8 2.8 無殘餘物 略顯粗糙 Ex. 25 0.7 1.4 2.6 無殘餘物 光滑 Ex. 26 PSA11 2.5 2.3 5.3 無殘餘物 略顯粗糙 Ex. 27 1.1 1.1 3.0 無殘餘物 光滑 Ex. 28 PSA12 2.1 2.0 4.7 無殘餘物 略顯粗糙 Ex. 29 1.2 1.3 4.0 無殘餘物 光滑 所有遮蔽帶未在處理期間分層，且亦未證實EMC之洩 127236.doc -29- 200837168 漏。又，所有遮蔽帶在帶自銅框架之可釋離性上係優良 的，且未觀察到諸如黏著劑殘餘物之污染。 然而，當構成黏合層之聚合物的”值較高時（如比較性 實例1至4，亦即使用卯值為2〇·〇 MIV.5之丙烯酸正丁酉旨 (在整個聚合物之情況下大於2〇() MPaG.5))，1置之親和 力較高，且因此EMC可能熔融黏附。結果，EMC之表面在 釋離遮蔽帶時大大_化。此現象在未進行後固化之樣本中 尤其明顯，且在比較性實例i中留下黏著劑殘餘物。此情 形展示黏合層之不良的内聚強度，亦即，未發生足夠的交 聯。 在本發明中，由於使用構成黏合層之聚合物具有低SP 值，亦即均聚物之SP值為19 Μΐν.5419 MPa〇.5以下（在整 個聚合物之情況下小於20.0 MPaG.5)之單體作為主要組份， 因此對EMC之親和力較低，且EMC較不可能熔融黏附。結 果，發現未在EMC之表面上留下任何黏著劑殘餘物，且 EMC之表面在釋離遮蔽帶時未糙化。 發現添加TPP大大促進黏著劑之交聯反應，且在以黏著 塗佈後僅/jnL和的乾燥步驟（在6 〇 歷時5分鐘）即賦予所需 的内聚力。因此，不必執行通常需要的歷時較長時間的後 固化。當對其中添加有τρρ之樣本進一步進行後固化時， 其展現至黏附體之足夠的初始黏著強度，且可在於熱處理 後不對黏結強度引起較大變化的情況下釋離。發現，當使 用本發明之遮蔽帶時，黏附體未被EMC污染，且因此在使 用後釋離遮蔽帶時不需要清潔步驟。 127236.doc -30- 200837168 【圖式簡單說明】 圖1展示四邊扁平無引腳（QFN)晶片級封裝之製造過程流 程圖之一實施例。 【主要元件符號說明】
C 1 财熱性遮蔽帶 2 耐熱性襯膜層 3 黏合層 11 引線框架 12 模-結合帶黏著劑 13 半導體晶片 14 密封樹脂 127236.doc -31 -

Claims (1)

  1. 200837168 十、申請專利範圍： 1· 一種耐熱性遮蔽帶，其包含：（1)耐熱性襯膜層，及（2) 安置於該耐熱性襯膜層上之壓敏性黏合層，其中該黏合 層包含溶解性參數（SP)值在25°C下為20 MPaG.5或20 MPaG·5以下之聚合物。 2· —種耐熱性遮蔽帶，其包含··（1)耐熱性襯膜層，及（2) 安置於該耐熱性襯膜層上之壓敏性黏合層，其中該黏合 層包含自使包含（甲基）丙烯酸烷基酯、（甲基）丙烯酸及 甲基丙烯酸縮水甘油酯之單體混合物聚合而得到之聚合 物’其中該（甲基）丙烯酸烧基酯之均聚物在2 5 °C下之溶 解性參數（SP)值為19 MPa0.5或19 MPa0·5以下，其中以1〇〇 重量份之該（曱基）丙烯酸烷基酯與該（甲基）丙烯酸之總 重量計，該（甲基）丙稀酸烧基酯之存在量為9〇至99重量 份，其中以100重量份之該（甲基）丙烯酸烷基酯與該（甲 基）丙稀酸之總重3：計，該（甲基）丙烯酸之存在量為1至 10重量份，且其中以1莫耳該（甲基）丙烯酸計，該（甲基） 丙稀酸縮水甘油酯之存在量為0.25至2.5莫耳。 3·如請求項1或2之耐熱性遮蔽帶，其中該（甲基）丙稀酸燒 基酯為選自由以下各物組成之群中之至少一者··丙稀酉知 2-乙基己酯、丙烯酸異辛酯、丙烯酸月桂酯、丙烯酸第 三丁酯及丙烯酸異冰片酯。 4·如請求項1至3中任一項之耐熱性遮蔽帶，其中該耐熱性 襯膜層具有選自由以下各物組成之群之材料：聚對笨一 甲酸乙二酯（PET)、聚醚醯亞胺、聚醚碾、聚蔡二甲酸 127236.doc 200837168 乙二醋或聚苯硫醚、聚醚醚酮、聚醯胺醯亞胺及聚醯亞 胺。 5 · 一種產生晶片級封裝之方法，其包含以下步驟：層壓遮 蔽帶與引線框架，將半導體晶片安裝於該引線框架上， 電連接该晶片，及使用包覆成型（overmolding)化合物來 樹脂密封該封裝，其中該遮蔽帶為在請求項1至4中任一 項中所描述之耐熱性遮蔽帶，且該包覆成型化合物為環 氧模塑化合物（EMC)。 6·如請求項5之產生晶片級封裝之方法，其中該環氧模塑 化合物（EMC)在25°C下具有大於20.0 MPaG·5且不大於26 〇 MPaG·5之SP值，且構成黏合層之聚合物具有2〇.〇 MPa0.5 或20·0 MPaG 5以下之SP值。 127236.doc
TW096147094A 2006-12-11 2007-12-10 Heat resistant masking tape and usage thereof TW200837168A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006333151A JP2008144047A (ja) 2006-12-11 2006-12-11 耐熱性マスキングテープ及びその使用方法

Publications (1)

Publication Number Publication Date
TW200837168A true TW200837168A (en) 2008-09-16

Family

ID=39512393

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096147094A TW200837168A (en) 2006-12-11 2007-12-10 Heat resistant masking tape and usage thereof

Country Status (6)

Country Link
US (1) US20110045638A1 (zh)
JP (1) JP2008144047A (zh)
KR (1) KR20090088898A (zh)
CN (1) CN101553547A (zh)
TW (1) TW200837168A (zh)
WO (1) WO2008073703A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI715534B (zh) * 2014-07-14 2021-01-11 日商電化股份有限公司 聚氟化亞乙烯基系樹脂黏著膜、透明基材之維修用黏著膜、及維修方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102105617A (zh) * 2008-08-08 2011-06-22 美国圣戈班性能塑料公司 热喷涂遮蔽胶带
ES2398505T3 (es) * 2008-10-14 2013-03-19 Basf Se Copolímeros con acrilatos de cadena larga
TW201107442A (en) 2009-04-30 2011-03-01 Furukawa Electric Co Ltd Tape for wafer processing
JP5551568B2 (ja) * 2009-11-12 2014-07-16 日東電工株式会社 樹脂封止用粘着テープ及びこれを用いた樹脂封止型半導体装置の製造方法
JP5366781B2 (ja) * 2009-12-14 2013-12-11 日東電工株式会社 樹脂封止用耐熱性粘着テープ及びこれを用いた樹脂封止型半導体装置の製造方法
KR20110087547A (ko) * 2010-01-26 2011-08-03 도레이첨단소재 주식회사 내열성 점착시트를 이용한 반도체 장치의 제조방법
JP6032197B2 (ja) * 2011-03-10 2016-11-24 住友ベークライト株式会社 半導体装置の製造方法
JP6279316B2 (ja) * 2012-12-27 2018-02-14 日本合成化学工業株式会社 耐熱粘着フィルム用アクリル系樹脂の製造方法
CN104995273B (zh) * 2013-02-18 2017-10-20 3M创新有限公司 压敏胶带及其制成的制品
JP2015017159A (ja) * 2013-07-09 2015-01-29 スリーエム イノベイティブ プロパティズ カンパニー 半導体ウェハ加工用粘着フィルム、薄層化された半導体ウェハの製造方法及び半導体チップの製造方法
KR101854493B1 (ko) * 2014-08-29 2018-05-04 삼성에스디아이 주식회사 점착필름, 및 이를 이용한 디스플레이 부재
JP6777974B2 (ja) * 2015-04-01 2020-10-28 デンカ株式会社 雨樋
US10121765B2 (en) 2017-03-01 2018-11-06 Semiconductor Components Industries, Llc Semiconductor device and method of forming WLCSP
JP7099896B2 (ja) * 2018-07-20 2022-07-12 スリーエム イノベイティブ プロパティズ カンパニー ウィンドウフィルム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3284423A (en) * 1963-12-20 1966-11-08 Monsanto Co Pressure-sensitive creep-resistant resin composition
DE1719096B2 (de) * 1967-10-31 1976-11-04 Beiersdorf Ag, 2000 Hamburg Verfahren zur herstellung von selbstklebebaendern oder -folien
US4812541A (en) * 1987-12-23 1989-03-14 Avery International Corporation High performance pressure-sensitive adhesive polymers
KR0153746B1 (ko) * 1989-09-14 1998-11-16 에드윈 씨.섬머스 점착성이 부여된 이중 경화성 압감성 접착제
DE19960466A1 (de) * 1999-12-15 2001-09-20 Beiersdorf Ag Klebeband, insbesondere zum Maskieren einer KTL-Grundierung
WO2003081653A1 (fr) * 2002-03-27 2003-10-02 Mitsui Chemicals, Inc. Film adhesif sensible a la pression destine a la protection de surface de plaquettes de semi-conducteurs et procede de protection de plaquettes de semi-conducteurs a l'aide de ce film
JP4266120B2 (ja) * 2002-03-27 2009-05-20 三井化学株式会社 半導体ウェハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウェハの保護方法
JP4610168B2 (ja) * 2003-08-06 2011-01-12 スリーエム イノベイティブ プロパティズ カンパニー 耐熱マスキングテープ
KR100576068B1 (ko) * 2004-04-21 2006-05-03 일동화학 주식회사 아크릴계 방열 패드
KR20060102197A (ko) * 2005-03-23 2006-09-27 강규정 바닥재 ｐｖｃ 타일용 친환경 아크릴계 에멀젼 접착제조성물

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI715534B (zh) * 2014-07-14 2021-01-11 日商電化股份有限公司 聚氟化亞乙烯基系樹脂黏著膜、透明基材之維修用黏著膜、及維修方法

Also Published As

Publication number Publication date
WO2008073703A3 (en) 2008-07-31
JP2008144047A (ja) 2008-06-26
CN101553547A (zh) 2009-10-07
KR20090088898A (ko) 2009-08-20
WO2008073703A2 (en) 2008-06-19
US20110045638A1 (en) 2011-02-24

Similar Documents

Publication Publication Date Title
TW200837168A (en) Heat resistant masking tape and usage thereof
US20190071589A1 (en) Pressure-sensitive adhesive sheet
EP2997107B1 (en) Adhesive composition
JP4610168B2 (ja) 耐熱マスキングテープ
EP2610319A1 (en) Acrylic adhesive composition, acrylic adhesive layer, and acrylic adhesive tape
EP2385090B1 (en) Acrylic pressure-sensitive adhesive tape
JP2004527590A (ja) 架橋型感圧接着剤組成物、および高温での用途に有用な架橋型感圧接着剤組成物ベースの接着製品
EP2452961B1 (en) Pressure-sensitive adhesive composition, pressure-sensitive adhesive layer, and pressure-sensitive adhesive tape or sheet
TW201006900A (en) Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheet and semi-conductor wafer backgrinding method using the same
TWI729164B (zh) 黏著片
JP2017212441A (ja) バックグラインドテープ
JP2012117040A (ja) 粘着テープ又はシート
JP7063690B2 (ja) 粘着シート
JP2019070102A (ja) アクリル系粘着剤組成物および粘着シート
TW201923006A (zh) 黏著片材
CN110256976B (zh) 感温性粘着片及层叠体
TW201520301A (zh) 攜帶電子機器用兩面黏著帶
CN112300729A (zh) 双面压敏粘合带
JP4879049B2 (ja) 両面粘着テープ及びその製造方法
JP7125259B2 (ja) 粘着シート
JP2686324B2 (ja) 感圧性接着剤組成物
CN109852267B (zh) 粘合片
JP2015147870A (ja) 粘着シート
JP6359284B2 (ja) 感圧接着剤
JP2019059902A (ja) 粘着剤組成物