TW200807666A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

Info

Publication number
TW200807666A
TW200807666A TW096114262A TW96114262A TW200807666A TW 200807666 A TW200807666 A TW 200807666A TW 096114262 A TW096114262 A TW 096114262A TW 96114262 A TW96114262 A TW 96114262A TW 200807666 A TW200807666 A TW 200807666A
Authority
TW
Taiwan
Prior art keywords
wiring
semiconductor device
power supply
main surface
manufacturing
Prior art date
Application number
TW096114262A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuharu Tanoue
Original Assignee
Renesas Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp filed Critical Renesas Tech Corp
Publication of TW200807666A publication Critical patent/TW200807666A/zh

Links

Classifications

    • H10W74/117
    • H10W70/60
    • H10W70/05
    • H10W70/65
    • H10W90/701
    • H10W70/685
    • H10W72/073
    • H10W72/07353
    • H10W72/075
    • H10W72/334
    • H10W72/352
    • H10W72/5522
    • H10W72/884
    • H10W72/931
    • H10W74/00
    • H10W90/734
    • H10W90/754

Landscapes

  • Wire Bonding (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW096114262A 2006-06-14 2007-04-23 Manufacturing Method of Semiconductor Device TW200807666A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006164822A JP2007335581A (ja) 2006-06-14 2006-06-14 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200807666A true TW200807666A (en) 2008-02-01

Family

ID=38862090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114262A TW200807666A (en) 2006-06-14 2007-04-23 Manufacturing Method of Semiconductor Device

Country Status (5)

Country Link
US (5) US7659146B2 (enExample)
JP (1) JP2007335581A (enExample)
KR (1) KR101296572B1 (enExample)
CN (1) CN101090081A (enExample)
TW (1) TW200807666A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5692952B2 (ja) * 2007-12-11 2015-04-01 シチズン電子株式会社 発光ダイオード
JP5188289B2 (ja) * 2008-06-26 2013-04-24 ラピスセミコンダクタ株式会社 プリント基板の製造方法
US8749074B2 (en) * 2009-11-30 2014-06-10 Micron Technology, Inc. Package including an interposer having at least one topological feature
JP5587123B2 (ja) * 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9082780B2 (en) * 2012-03-23 2015-07-14 Stats Chippac, Ltd. Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer
JP6068175B2 (ja) * 2013-02-12 2017-01-25 新光電気工業株式会社 配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法
KR20160000293A (ko) * 2014-06-24 2016-01-04 삼성전자주식회사 탭 핀에 타이바가 없는 반도체 모듈
JP2016122802A (ja) * 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置
JP6293248B2 (ja) * 2016-12-12 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR20190093488A (ko) * 2018-02-01 2019-08-09 에스케이하이닉스 주식회사 반도체 패키지
KR102509051B1 (ko) * 2018-02-01 2023-03-10 에스케이하이닉스 주식회사 반도체 패키지
CN110112116B (zh) 2018-02-01 2023-06-06 爱思开海力士有限公司 半导体封装件和形成半导体封装件的方法
CN110112117A (zh) * 2018-02-01 2019-08-09 爱思开海力士有限公司 半导体封装
US10879160B2 (en) * 2018-02-01 2020-12-29 SK Hynix Inc. Semiconductor package with packaging substrate
US11462501B2 (en) * 2019-10-25 2022-10-04 Shinko Electric Industries Co., Ltd. Interconnect substrate and method of making the same
CN116130445A (zh) * 2021-11-12 2023-05-16 合肥本源量子计算科技有限责任公司 一种量子器件及其制备方法、一种量子计算机

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450450A (en) * 1987-08-20 1989-02-27 Toshiba Corp Package for semiconductor integrated circuit
JP3339473B2 (ja) * 1999-08-26 2002-10-28 日本電気株式会社 パッケージ基板、該パッケージ基板を備える半導体装置及びそれらの製造方法
JP3721299B2 (ja) * 2000-08-03 2005-11-30 新光電気工業株式会社 半導体パッケージの製造方法
JP3619773B2 (ja) * 2000-12-20 2005-02-16 株式会社ルネサステクノロジ 半導体装置の製造方法
CN101303984B (zh) * 2001-06-07 2012-02-15 瑞萨电子株式会社 半导体装置的制造方法
JP2003086735A (ja) * 2001-06-27 2003-03-20 Shinko Electric Ind Co Ltd 位置情報付配線基板及びその製造方法並びに半導体装置の製造方法
US6861764B2 (en) * 2001-06-27 2005-03-01 Shinko Electric Industries Co., Ltd. Wiring substrate having position information
JP2005079129A (ja) 2003-08-28 2005-03-24 Sumitomo Metal Electronics Devices Inc プラスチックパッケージ及びその製造方法
KR100557540B1 (ko) * 2004-07-26 2006-03-03 삼성전기주식회사 Bga 패키지 기판 및 그 제작 방법
JP4651359B2 (ja) 2004-10-29 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2006261485A (ja) * 2005-03-18 2006-09-28 Renesas Technology Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7915086B2 (en) 2011-03-29
CN101090081A (zh) 2007-12-19
US20070292993A1 (en) 2007-12-20
US20110124159A1 (en) 2011-05-26
US20090311833A1 (en) 2009-12-17
KR20070119521A (ko) 2007-12-20
US8420451B2 (en) 2013-04-16
US20120083072A1 (en) 2012-04-05
US7659146B2 (en) 2010-02-09
JP2007335581A (ja) 2007-12-27
US8258018B2 (en) 2012-09-04
KR101296572B1 (ko) 2013-08-13
US20120282737A1 (en) 2012-11-08
US8048722B2 (en) 2011-11-01

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