KR101296572B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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KR101296572B1
KR101296572B1 KR1020070057541A KR20070057541A KR101296572B1 KR 101296572 B1 KR101296572 B1 KR 101296572B1 KR 1020070057541 A KR1020070057541 A KR 1020070057541A KR 20070057541 A KR20070057541 A KR 20070057541A KR 101296572 B1 KR101296572 B1 KR 101296572B1
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wiring
plating
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semiconductor device
main surface
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KR20070119521A (ko
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데쯔하루 다노우에
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르네사스 일렉트로닉스 가부시키가이샤
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020070057541A 2006-06-14 2007-06-13 반도체 장치의 제조 방법 Expired - Fee Related KR101296572B1 (ko)

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JP5188289B2 (ja) * 2008-06-26 2013-04-24 ラピスセミコンダクタ株式会社 プリント基板の製造方法
US8749074B2 (en) * 2009-11-30 2014-06-10 Micron Technology, Inc. Package including an interposer having at least one topological feature
JP5587123B2 (ja) 2010-09-30 2014-09-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9082780B2 (en) * 2012-03-23 2015-07-14 Stats Chippac, Ltd. Semiconductor device and method of forming a robust fan-out package including vertical interconnects and mechanical support layer
JP6068175B2 (ja) * 2013-02-12 2017-01-25 新光電気工業株式会社 配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法
KR20160000293A (ko) * 2014-06-24 2016-01-04 삼성전자주식회사 탭 핀에 타이바가 없는 반도체 모듈
JP2016122802A (ja) * 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置
JP6293248B2 (ja) * 2016-12-12 2018-03-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US10879160B2 (en) * 2018-02-01 2020-12-29 SK Hynix Inc. Semiconductor package with packaging substrate
CN110112117A (zh) * 2018-02-01 2019-08-09 爱思开海力士有限公司 半导体封装
KR20190093488A (ko) * 2018-02-01 2019-08-09 에스케이하이닉스 주식회사 반도체 패키지
KR102509051B1 (ko) * 2018-02-01 2023-03-10 에스케이하이닉스 주식회사 반도체 패키지
US11462501B2 (en) * 2019-10-25 2022-10-04 Shinko Electric Industries Co., Ltd. Interconnect substrate and method of making the same
CN116130445A (zh) * 2021-11-12 2023-05-16 合肥本源量子计算科技有限责任公司 一种量子器件及其制备方法、一种量子计算机

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US11557523B2 (en) 2018-02-01 2023-01-17 SK Hynix Inc. Semiconductor packages and methods of forming the semiconductor packages

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US7659146B2 (en) 2010-02-09
US8420451B2 (en) 2013-04-16
US20120282737A1 (en) 2012-11-08
US7915086B2 (en) 2011-03-29
US20070292993A1 (en) 2007-12-20
CN101090081A (zh) 2007-12-19
US20120083072A1 (en) 2012-04-05
KR20070119521A (ko) 2007-12-20
US20110124159A1 (en) 2011-05-26
US8048722B2 (en) 2011-11-01
US20090311833A1 (en) 2009-12-17
TW200807666A (en) 2008-02-01
US8258018B2 (en) 2012-09-04

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