TW200746388A - Complex oxide laminate, method of manufacturing complex oxide laminate, and device - Google Patents

Complex oxide laminate, method of manufacturing complex oxide laminate, and device

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Publication number
TW200746388A
TW200746388A TW095131790A TW95131790A TW200746388A TW 200746388 A TW200746388 A TW 200746388A TW 095131790 A TW095131790 A TW 095131790A TW 95131790 A TW95131790 A TW 95131790A TW 200746388 A TW200746388 A TW 200746388A
Authority
TW
Taiwan
Prior art keywords
complex oxide
oxide laminate
manufacturing
laminate
oxide layer
Prior art date
Application number
TW095131790A
Other languages
English (en)
Inventor
Takeshi Kijima
Koji Ohashi
Yasuaki Hamada
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200746388A publication Critical patent/TW200746388A/zh

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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    • H03H9/02535—Details of surface acoustic wave devices
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    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
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    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
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    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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    • H10N30/00—Piezoelectric or electrostrictive devices
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    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Acoustics & Sound (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Laminated Bodies (AREA)
  • Thin Film Transistor (AREA)
TW095131790A 2005-09-05 2006-08-29 Complex oxide laminate, method of manufacturing complex oxide laminate, and device TW200746388A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005256416A JP4553137B2 (ja) 2005-09-05 2005-09-05 複合酸化物積層体の製造方法

Publications (1)

Publication Number Publication Date
TW200746388A true TW200746388A (en) 2007-12-16

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TW095131790A TW200746388A (en) 2005-09-05 2006-08-29 Complex oxide laminate, method of manufacturing complex oxide laminate, and device

Country Status (7)

Country Link
US (1) US20070054038A1 (zh)
EP (1) EP1760770B1 (zh)
JP (1) JP4553137B2 (zh)
KR (1) KR100830013B1 (zh)
CN (1) CN1929038B (zh)
DE (1) DE602006017480D1 (zh)
TW (1) TW200746388A (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4433200B2 (ja) * 2005-12-20 2010-03-17 セイコーエプソン株式会社 強誘電体キャパシタおよび半導体装置
JP4164701B2 (ja) * 2006-05-31 2008-10-15 セイコーエプソン株式会社 強誘電体キャパシタ、強誘電体キャパシタの製造方法、強誘電体メモリおよび強誘電体メモリの製造方法
JP5328007B2 (ja) * 2007-03-30 2013-10-30 パナソニック株式会社 圧電体素子及びその製造方法
JP2009076571A (ja) * 2007-09-19 2009-04-09 Seiko Epson Corp 強誘電体キャパシタとその製造方法、及び強誘電体メモリ装置
JP2009080434A (ja) * 2007-09-27 2009-04-16 Ricoh Opt Ind Co Ltd 光学素子製造方法および光学素子
US8956731B2 (en) * 2008-02-27 2015-02-17 Dai Nippon Printing Co., Ltd. Gas barrier sheet
JP2009252786A (ja) * 2008-04-01 2009-10-29 Seiko Epson Corp 酸化物原料溶液、酸化物膜、圧電素子、酸化物膜の形成方法および圧電素子の製造方法
KR101021973B1 (ko) * 2008-09-26 2011-03-16 서울대학교산학협력단 비휘발성 기억소자 및 비휘발성 기억소자의 정보기록방법과정보판독방법
JP5509419B2 (ja) * 2009-07-24 2014-06-04 株式会社ユーテック 強誘電体膜、電子部品及び強誘電体膜の製造方法
JP5561464B2 (ja) * 2009-09-30 2014-07-30 セイコーエプソン株式会社 圧電素子、液体噴射ヘッドおよび液体噴射装置
JP5834675B2 (ja) * 2011-09-16 2015-12-24 株式会社リコー 電気−機械変換素子、液滴吐出ヘッド、液滴吐出装置及び画像形成装置
JP5919814B2 (ja) * 2011-12-27 2016-05-18 株式会社リコー 電気機械変換素子の製造方法、液滴吐出ヘッドの製造方法
JP6028419B2 (ja) * 2012-06-29 2016-11-16 株式会社リコー 電気機械変換素子及びその製造方法、並びに液滴吐出ヘッド及び液滴吐出装置
KR101497888B1 (ko) * 2012-11-14 2015-03-02 엔지케이 인슐레이터 엘티디 복합 기판 및 그 제법
JP6036460B2 (ja) * 2013-03-26 2016-11-30 三菱マテリアル株式会社 ＰＮｂＺＴ強誘電体薄膜の形成方法
CN114070235A (zh) * 2020-08-06 2022-02-18 联华电子股份有限公司 半导体模块及其制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139313A (ja) * 1999-11-11 2001-05-22 Nec Corp 酸化物膜の製造方法と強誘電体メモリの製造方法
JP4051654B2 (ja) * 2000-02-08 2008-02-27 セイコーエプソン株式会社 圧電体素子、インクジェット式記録ヘッド及びこれらの製造方法並びにインクジェットプリンタ
JP2002164247A (ja) * 2000-11-24 2002-06-07 Murata Mfg Co Ltd 誘電体セラミック組成物および積層セラミックコンデンサ
US6914282B2 (en) * 2002-10-15 2005-07-05 Macronix International Co., Ltd. Ferroelectric device and method for making
JP3791614B2 (ja) * 2002-10-24 2006-06-28 セイコーエプソン株式会社 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ
JP4578774B2 (ja) * 2003-01-08 2010-11-10 富士通株式会社 強誘電体キャパシタの製造方法
KR20040070564A (ko) * 2003-02-04 2004-08-11 삼성전자주식회사 강유전체 커패시터 및 그 제조방법
US7215067B2 (en) * 2003-02-07 2007-05-08 Canon Kabushiki Kaisha Ferroelectric thin film element, piezoelectric actuator and liquid discharge head
JP2004311924A (ja) * 2003-03-26 2004-11-04 Seiko Epson Corp 強誘電体キャパシタおよびその製造方法、強誘電体メモリ、圧電素子。
JP4720969B2 (ja) * 2003-03-28 2011-07-13 セイコーエプソン株式会社 強誘電体膜、圧電体膜、強誘電体メモリ及び圧電素子
JP2004319651A (ja) * 2003-04-14 2004-11-11 Seiko Epson Corp メモリの素子及びその製造方法
JP2005159308A (ja) * 2003-11-05 2005-06-16 Seiko Epson Corp 強誘電体膜、強誘電体キャパシタ、および強誘電体メモリ
JP4700332B2 (ja) * 2003-12-05 2011-06-15 イビデン株式会社 多層プリント配線板
JP4171908B2 (ja) * 2004-01-20 2008-10-29 セイコーエプソン株式会社 強誘電体膜、強誘電体メモリ、及び圧電素子
JP2005294308A (ja) * 2004-03-31 2005-10-20 Fujitsu Ltd 強誘電体膜を含んだ電子素子とその製造方法
JP4709544B2 (ja) * 2004-05-31 2011-06-22 セイコーエプソン株式会社 前駆体組成物、前駆体組成物の製造方法、強誘電体膜の製造方法、圧電素子、半導体装置、圧電アクチュエータ、インクジェット式記録ヘッド、およびインクジェットプリンタ

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CN1929038A (zh) 2007-03-14
JP4553137B2 (ja) 2010-09-29
DE602006017480D1 (de) 2010-11-25
KR20070026258A (ko) 2007-03-08
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EP1760770A3 (en) 2008-07-16

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