TW200739755A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- TW200739755A TW200739755A TW096106515A TW96106515A TW200739755A TW 200739755 A TW200739755 A TW 200739755A TW 096106515 A TW096106515 A TW 096106515A TW 96106515 A TW96106515 A TW 96106515A TW 200739755 A TW200739755 A TW 200739755A
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- dicing tape
- blade
- semiconductor wafer
- manufacturing
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006073141A JP4719042B2 (ja) | 2006-03-16 | 2006-03-16 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200739755A true TW200739755A (en) | 2007-10-16 |
TWI340415B TWI340415B (zh) | 2011-04-11 |
Family
ID=38518374
Family Applications (1)
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TW096106515A TW200739755A (en) | 2006-03-16 | 2007-02-26 | Manufacturing method of semiconductor device |
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US (2) | US7736999B2 (zh) |
JP (1) | JP4719042B2 (zh) |
KR (1) | KR100870288B1 (zh) |
CN (1) | CN101038891B (zh) |
TW (1) | TW200739755A (zh) |
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Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0574932A (ja) | 1991-09-17 | 1993-03-26 | Fujitsu Ltd | 半導体ウエハのダイシング方法 |
JP3195236B2 (ja) * | 1996-05-30 | 2001-08-06 | 株式会社日立製作所 | 接着フィルムを有する配線テープ,半導体装置及び製造方法 |
JP2001308262A (ja) | 2000-04-26 | 2001-11-02 | Mitsubishi Electric Corp | 樹脂封止bga型半導体装置 |
JP2001345287A (ja) * | 2000-05-31 | 2001-12-14 | Hitachi Ltd | 半導体装置の製造方法 |
JP2003031526A (ja) | 2001-07-16 | 2003-01-31 | Mitsumi Electric Co Ltd | モジュールの製造方法及びモジュール |
JP3760378B2 (ja) * | 2001-09-14 | 2006-03-29 | 株式会社村田製作所 | 端面反射型表面波装置及びその製造方法 |
JP2003158096A (ja) | 2001-11-26 | 2003-05-30 | Hitachi Ltd | 半導体装置の製造方法 |
JPWO2003056613A1 (ja) * | 2001-12-25 | 2005-05-12 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP3912223B2 (ja) | 2002-08-09 | 2007-05-09 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP4123027B2 (ja) | 2003-03-31 | 2008-07-23 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4383768B2 (ja) * | 2003-04-23 | 2009-12-16 | スリーエム イノベイティブ プロパティズ カンパニー | 封止用フィルム接着剤、封止用フィルム積層体及び封止方法 |
KR101215728B1 (ko) * | 2003-06-06 | 2012-12-26 | 히다치 가세고교 가부시끼가이샤 | 반도체 장치의 제조방법 |
JP2005142399A (ja) | 2003-11-07 | 2005-06-02 | Tokyo Seimitsu Co Ltd | ダイシング方法 |
JP2005243947A (ja) | 2004-02-26 | 2005-09-08 | Sumitomo Electric Ind Ltd | 半導体装置の製造方法、及び半導体装置 |
US20050205981A1 (en) | 2004-03-18 | 2005-09-22 | Kabushiki Kaisha Toshiba | Stacked electronic part |
TWI294904B (en) * | 2004-05-11 | 2008-03-21 | Hitachi Chemical Co Ltd | Adhesive film, lead frame with adhesive film, and semiconductor device using same |
US7629695B2 (en) | 2004-05-20 | 2009-12-08 | Kabushiki Kaisha Toshiba | Stacked electronic component and manufacturing method thereof |
CN1700467A (zh) | 2004-05-20 | 2005-11-23 | 株式会社东芝 | 半导体器件 |
JP4677758B2 (ja) * | 2004-10-14 | 2011-04-27 | 日立化成工業株式会社 | ダイボンドダイシングシート及びその製造方法、並びに、半導体装置の製造方法 |
TW200727446A (en) | 2005-03-28 | 2007-07-16 | Toshiba Kk | Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method |
JP4719042B2 (ja) * | 2006-03-16 | 2011-07-06 | 株式会社東芝 | 半導体装置の製造方法 |
-
2006
- 2006-03-16 JP JP2006073141A patent/JP4719042B2/ja active Active
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2007
- 2007-02-26 TW TW096106515A patent/TW200739755A/zh unknown
- 2007-03-09 US US11/715,961 patent/US7736999B2/en active Active
- 2007-03-15 KR KR1020070025359A patent/KR100870288B1/ko not_active IP Right Cessation
- 2007-03-16 CN CN2007100883391A patent/CN101038891B/zh active Active
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI501378B (zh) * | 2012-09-10 | 2015-09-21 | Toshiba Kk | 積層型半導體裝置及其製造方法 |
TWI633593B (zh) * | 2013-06-21 | 2018-08-21 | 日東電工股份有限公司 | Cutting ‧ grain bonded film |
US11315971B2 (en) | 2017-09-12 | 2022-04-26 | Sony Semiconductor Solutions Corporation | Imaging device, method of producing imaging device, imaging apparatus, and electronic apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN101038891A (zh) | 2007-09-19 |
US7736999B2 (en) | 2010-06-15 |
US8039364B2 (en) | 2011-10-18 |
US20100207252A1 (en) | 2010-08-19 |
CN101038891B (zh) | 2010-08-25 |
US20070218586A1 (en) | 2007-09-20 |
KR100870288B1 (ko) | 2008-11-25 |
JP4719042B2 (ja) | 2011-07-06 |
TWI340415B (zh) | 2011-04-11 |
JP2007250886A (ja) | 2007-09-27 |
KR20070094495A (ko) | 2007-09-20 |
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