WO2009060693A1 - デバイスおよびデバイス製造方法 - Google Patents

デバイスおよびデバイス製造方法 Download PDF

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Publication number
WO2009060693A1
WO2009060693A1 PCT/JP2008/068544 JP2008068544W WO2009060693A1 WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1 JP 2008068544 W JP2008068544 W JP 2008068544W WO 2009060693 A1 WO2009060693 A1 WO 2009060693A1
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WIPO (PCT)
Prior art keywords
substrate
intermediate layer
main component
functional intermediate
bonding functional
Prior art date
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PCT/JP2008/068544
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English (en)
French (fr)
Inventor
Jun Utsumi
Takayuki Goto
Kensuke Ide
Hideki Takagi
Masahiro Funayama
Original Assignee
Mitsubishi Heavy Industries, Ltd.
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Mitsubishi Heavy Industries, Ltd., National Institute Of Advanced Industrial Science And Technology filed Critical Mitsubishi Heavy Industries, Ltd.
Priority to CA2704610A priority Critical patent/CA2704610C/en
Priority to KR1020107009745A priority patent/KR101240063B1/ko
Priority to CN2008801145566A priority patent/CN101849276B/zh
Priority to US12/741,916 priority patent/US20100276723A1/en
Priority to EP08846882.2A priority patent/EP2207195A4/en
Publication of WO2009060693A1 publication Critical patent/WO2009060693A1/ja
Priority to US13/797,521 priority patent/US8936998B2/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
    • H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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Abstract

　本発明によるデバイスは、主成分が二酸化ケイ素である第１基板と、主成分がシリコンあるいは化合物半導体あるいは二酸化ケイ素あるいはフッ化物のいずれかである第２基板と、第１基板と第２基板との間に配置される接合機能中間層とを備えている。第１基板は、接合機能中間層を介して第１基板のスパッタリングされた第１表面と第２基板のスパッタリングされた第２表面とを接触させる常温接合により第２基板に接合されている。このとき、接合機能中間層の材料は、第１基板の主成分と異なり、第２基板の主成分と異なり、酸化物あるいはフッ化物あるいは窒化物のうちの光透過性を有する材料から選択される。
PCT/JP2008/068544 2007-11-08 2008-10-14 デバイスおよびデバイス製造方法 WO2009060693A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CA2704610A CA2704610C (en) 2007-11-08 2008-10-14 Device and device manufacture method
KR1020107009745A KR101240063B1 (ko) 2007-11-08 2008-10-14 디바이스 및 디바이스 제조 방법
CN2008801145566A CN101849276B (zh) 2007-11-08 2008-10-14 一种利用光的设备及其制造方法
US12/741,916 US20100276723A1 (en) 2007-11-08 2008-10-14 Device and device manufacture method
EP08846882.2A EP2207195A4 (en) 2007-11-08 2008-10-14 DEVICE AND METHOD FOR MANUFACTURING THE DEVICE
US13/797,521 US8936998B2 (en) 2007-11-08 2013-03-12 Manufcaturing method for room-temperature substrate bonding

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-290922 2007-11-08
JP2007290922A JP4348454B2 (ja) 2007-11-08 2007-11-08 デバイスおよびデバイス製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/741,916 A-371-Of-International US20100276723A1 (en) 2007-11-08 2008-10-14 Device and device manufacture method
US13/797,521 Division US8936998B2 (en) 2007-11-08 2013-03-12 Manufcaturing method for room-temperature substrate bonding

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Publication Number Publication Date
WO2009060693A1 true WO2009060693A1 (ja) 2009-05-14

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PCT/JP2008/068544 WO2009060693A1 (ja) 2007-11-08 2008-10-14 デバイスおよびデバイス製造方法

Country Status (8)

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US (2) US20100276723A1 (ja)
EP (1) EP2207195A4 (ja)
JP (1) JP4348454B2 (ja)
KR (1) KR101240063B1 (ja)
CN (1) CN101849276B (ja)
CA (1) CA2704610C (ja)
TW (1) TWI391316B (ja)
WO (1) WO2009060693A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107406292A (zh) * 2014-10-31 2017-11-28 康宁股份有限公司 激光焊接的玻璃封装和制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102498542B (zh) 2009-09-04 2016-05-11 住友化学株式会社 半导体基板、场效应晶体管、集成电路和半导体基板的制造方法
JP6122297B2 (ja) * 2011-01-31 2017-04-26 須賀　唯知 接合基板作成方法、基板接合方法、及び接合基板作成装置
KR101927559B1 (ko) * 2011-08-30 2018-12-10 에베 그룹 에. 탈너 게엠베하 고체 상태 확산 또는 상 변환에 의해 연결 층에 의한 웨이퍼의 영구 접착을 위한 방법
CN102693996B (zh) * 2012-06-20 2015-03-11 中国科学院上海高等研究院 图像传感器
CN105074868B (zh) * 2013-02-19 2019-02-22 日本碍子株式会社 复合基板、半导体装置及半导体装置的制法
JP2015064321A (ja) 2013-09-26 2015-04-09 キヤノン株式会社 流路デバイス
CN103692119A (zh) * 2013-12-17 2014-04-02 南京理工大学 基于视觉传感的电子束深熔焊熔池动态监测装置
CH711295B1 (fr) * 2015-07-06 2019-11-29 Cartier Int Ag Procédé de fixation par assemblage anodique.
KR20190133794A (ko) * 2016-03-25 2019-12-03 엔지케이 인슐레이터 엘티디 접합 방법
TWI780103B (zh) * 2017-05-02 2022-10-11 日商日本碍子股份有限公司 彈性波元件及其製造方法
JP7287772B2 (ja) * 2018-11-26 2023-06-06 ランテクニカルサービス株式会社 透明基板の接合方法及び積層体
JP7222493B2 (ja) 2021-04-28 2023-02-15 日本電産マシンツール株式会社 半導体装置の製造方法、及び常温接合装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63101085A (ja) * 1986-10-16 1988-05-06 Fuji Electric Co Ltd 拡散接合方法
JPH10200079A (ja) * 1996-11-15 1998-07-31 Canon Inc 半導体部材の製造方法および半導体部材
JP2004054170A (ja) 2002-07-24 2004-02-19 Japan Atom Energy Res Inst イオンビームエッチングを用いたレーザー光学結晶の接合法
JP2004337927A (ja) 2003-05-15 2004-12-02 Tadatomo Suga 基板接合方法および基板接合装置
JP2004343359A (ja) 2003-05-14 2004-12-02 Fujitsu Media Device Kk 弾性表面波素子の製造方法
JP2005104810A (ja) 2003-10-02 2005-04-21 Hitachi Metals Ltd 異種材料複合体およびその製造方法
JP2007042750A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5427638A (en) * 1992-06-04 1995-06-27 Alliedsignal Inc. Low temperature reaction bonding
JP3415183B2 (ja) * 1992-11-27 2003-06-09 オリンパス光学工業株式会社 光学素子接合体の製造方法および光学素子接合体
JP3266041B2 (ja) * 1996-05-22 2002-03-18 株式会社島津製作所 部材接合法及びこの方法により製造した光学測定装置
US6054363A (en) * 1996-11-15 2000-04-25 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
CA2220600C (en) * 1996-11-15 2002-02-12 Canon Kabushiki Kaisha Method of manufacturing semiconductor article
JP3862867B2 (ja) * 1998-08-07 2006-12-27 信越化学工業株式会社 光アイソレータとその製造方法
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6639249B2 (en) * 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6822326B2 (en) * 2002-09-25 2004-11-23 Ziptronix Wafer bonding hermetic encapsulation
TWI227550B (en) * 2002-10-30 2005-02-01 Sanyo Electric Co Semiconductor device manufacturing method
US7109092B2 (en) * 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
JP2005070682A (ja) * 2003-08-27 2005-03-17 Kyocera Corp 光学デバイスおよびその製造方法
US7115182B2 (en) * 2004-06-15 2006-10-03 Agency For Science, Technology And Research Anodic bonding process for ceramics
US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
CN105603425A (zh) * 2016-01-25 2016-05-25 熙腾电子科技（上海）有限公司 铜选择性蚀刻液和钛选择性蚀刻液

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63101085A (ja) * 1986-10-16 1988-05-06 Fuji Electric Co Ltd 拡散接合方法
JPH10200079A (ja) * 1996-11-15 1998-07-31 Canon Inc 半導体部材の製造方法および半導体部材
JP2004054170A (ja) 2002-07-24 2004-02-19 Japan Atom Energy Res Inst イオンビームエッチングを用いたレーザー光学結晶の接合法
JP2004343359A (ja) 2003-05-14 2004-12-02 Fujitsu Media Device Kk 弾性表面波素子の製造方法
JP2004337927A (ja) 2003-05-15 2004-12-02 Tadatomo Suga 基板接合方法および基板接合装置
JP2005104810A (ja) 2003-10-02 2005-04-21 Hitachi Metals Ltd 異種材料複合体およびその製造方法
JP2007042750A (ja) * 2005-08-01 2007-02-15 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
SATORU SUEHARA ET AL.: "Sekiei Wafer no Plasma Kasseika Teion Setsugo", THE TRANSACTIONS OF THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS. C, vol. J88-C, no. 11, 1 November 2005 (2005-11-01), pages 920 - 927, XP008135401 *
See also references of EP2207195A4
TAKAGI ET AL.: "Proceedings of NEDO (New Energy and Industrial Technology Development Organization)", 2003 RESEARCH PROMOTION BUSINESS ACCOMPLISHMENT REPORT MEETING, 2003, pages 220 - 225

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107406292A (zh) * 2014-10-31 2017-11-28 康宁股份有限公司 激光焊接的玻璃封装和制造方法

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CN101849276A (zh) 2010-09-29
EP2207195A1 (en) 2010-07-14
TWI391316B (zh) 2013-04-01
US20130213561A1 (en) 2013-08-22
JP4348454B2 (ja) 2009-10-21
KR20100082000A (ko) 2010-07-15
US20100276723A1 (en) 2010-11-04
JP2009117707A (ja) 2009-05-28
EP2207195A4 (en) 2015-11-18
CA2704610C (en) 2015-12-15
KR101240063B1 (ko) 2013-03-06
TW200927636A (en) 2009-07-01
CN101849276B (zh) 2012-07-18
CA2704610A1 (en) 2009-05-14

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