TW200733379A - Electronic device including a poled superlattice having a net electrical dipole moment - Google Patents
Electronic device including a poled superlattice having a net electrical dipole momentInfo
- Publication number
- TW200733379A TW200733379A TW095148199A TW95148199A TW200733379A TW 200733379 A TW200733379 A TW 200733379A TW 095148199 A TW095148199 A TW 095148199A TW 95148199 A TW95148199 A TW 95148199A TW 200733379 A TW200733379 A TW 200733379A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- electronic device
- dipole moment
- poled superlattice
- net electrical
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 8
- 239000002356 single layer Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75298505P | 2005-12-22 | 2005-12-22 | |
US75314105P | 2005-12-22 | 2005-12-22 | |
US75314205P | 2005-12-22 | 2005-12-22 | |
US75298405P | 2005-12-22 | 2005-12-22 | |
US75299005P | 2005-12-22 | 2005-12-22 | |
US75312005P | 2005-12-22 | 2005-12-22 | |
US75314305P | 2005-12-22 | 2005-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200733379A true TW200733379A (en) | 2007-09-01 |
Family
ID=38093051
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148208A TWI334646B (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice |
TW095148202A TW200746237A (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
TW095148199A TW200733379A (en) | 2005-12-22 | 2006-12-21 | Electronic device including a poled superlattice having a net electrical dipole moment |
TW095148211A TWI316294B (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a selectively polable superlattice |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148208A TWI334646B (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice |
TW095148202A TW200746237A (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148211A TWI316294B (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a selectively polable superlattice |
Country Status (3)
Country | Link |
---|---|
US (4) | US20070158640A1 (zh) |
TW (4) | TWI334646B (zh) |
WO (2) | WO2007075942A2 (zh) |
Cited By (1)
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TWI407608B (zh) * | 2009-06-11 | 2013-09-01 | Elpida Memory Inc | 固態記憶體裝置、資料處理系統、及資料處理裝置 |
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US20070158640A1 (en) * | 2005-12-22 | 2007-07-12 | Rj Mears, Llc | Electronic device including a poled superlattice having a net electrical dipole moment |
US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
US8324783B1 (en) | 2012-04-24 | 2012-12-04 | UltraSolar Technology, Inc. | Non-decaying electric power generation from pyroelectric materials |
US9406753B2 (en) | 2013-11-22 | 2016-08-02 | Atomera Incorporated | Semiconductor devices including superlattice depletion layer stack and related methods |
CN106104805B (zh) | 2013-11-22 | 2020-06-16 | 阿托梅拉公司 | 包括超晶格穿通停止层堆叠的垂直半导体装置和相关方法 |
KR102318317B1 (ko) | 2014-05-27 | 2021-10-28 | 실라나 유브이 테크놀로지스 피티이 리미티드 | 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조 |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
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US7586165B2 (en) * | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Microelectromechanical systems (MEMS) device including a superlattice |
US20060223215A1 (en) * | 2003-06-26 | 2006-10-05 | Rj Mears, Llc | Method for Making a Microelectromechanical Systems (MEMS) Device Including a Superlattice |
CN1816914B (zh) * | 2003-07-02 | 2010-12-29 | Nxp股份有限公司 | 半导体器件、制造量子阱结构的方法和包括这种量子阱结构的半导体器件 |
US20070108502A1 (en) * | 2005-11-17 | 2007-05-17 | Sharp Laboratories Of America, Inc. | Nanocrystal silicon quantum dot memory device |
US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
US20070158640A1 (en) * | 2005-12-22 | 2007-07-12 | Rj Mears, Llc | Electronic device including a poled superlattice having a net electrical dipole moment |
-
2006
- 2006-12-21 US US11/614,477 patent/US20070158640A1/en not_active Abandoned
- 2006-12-21 TW TW095148208A patent/TWI334646B/zh active
- 2006-12-21 WO PCT/US2006/048890 patent/WO2007075942A2/en active Application Filing
- 2006-12-21 US US11/614,559 patent/US20070166928A1/en not_active Abandoned
- 2006-12-21 US US11/614,535 patent/US20070187667A1/en not_active Abandoned
- 2006-12-21 TW TW095148202A patent/TW200746237A/zh unknown
- 2006-12-21 WO PCT/US2006/049009 patent/WO2007076008A2/en active Application Filing
- 2006-12-21 TW TW095148199A patent/TW200733379A/zh unknown
- 2006-12-21 TW TW095148211A patent/TWI316294B/zh active
-
2010
- 2010-05-18 US US12/782,211 patent/US20100270535A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI407608B (zh) * | 2009-06-11 | 2013-09-01 | Elpida Memory Inc | 固態記憶體裝置、資料處理系統、及資料處理裝置 |
Also Published As
Publication number | Publication date |
---|---|
TW200742059A (en) | 2007-11-01 |
TW200746237A (en) | 2007-12-16 |
WO2007075942A2 (en) | 2007-07-05 |
TWI334646B (en) | 2010-12-11 |
WO2007075942A3 (en) | 2007-09-13 |
US20070158640A1 (en) | 2007-07-12 |
US20070166928A1 (en) | 2007-07-19 |
TWI316294B (en) | 2009-10-21 |
US20070187667A1 (en) | 2007-08-16 |
TW200742060A (en) | 2007-11-01 |
WO2007076008A2 (en) | 2007-07-05 |
WO2007076008A3 (en) | 2007-09-20 |
US20100270535A1 (en) | 2010-10-28 |
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