TWI316294B - Method for making an electronic device including a selectively polable superlattice - Google Patents
Method for making an electronic device including a selectively polable superlatticeInfo
- Publication number
- TWI316294B TWI316294B TW095148211A TW95148211A TWI316294B TW I316294 B TWI316294 B TW I316294B TW 095148211 A TW095148211 A TW 095148211A TW 95148211 A TW95148211 A TW 95148211A TW I316294 B TWI316294 B TW I316294B
- Authority
- TW
- Taiwan
- Prior art keywords
- polable
- superlattice
- selectively
- making
- electronic device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Composite Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Bipolar Transistors (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75298505P | 2005-12-22 | 2005-12-22 | |
US75314105P | 2005-12-22 | 2005-12-22 | |
US75298405P | 2005-12-22 | 2005-12-22 | |
US75314205P | 2005-12-22 | 2005-12-22 | |
US75312005P | 2005-12-22 | 2005-12-22 | |
US75314305P | 2005-12-22 | 2005-12-22 | |
US75299005P | 2005-12-22 | 2005-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200742060A TW200742060A (en) | 2007-11-01 |
TWI316294B true TWI316294B (en) | 2009-10-21 |
Family
ID=38093051
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148208A TWI334646B (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice |
TW095148211A TWI316294B (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a selectively polable superlattice |
TW095148199A TW200733379A (en) | 2005-12-22 | 2006-12-21 | Electronic device including a poled superlattice having a net electrical dipole moment |
TW095148202A TW200746237A (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148208A TWI334646B (en) | 2005-12-22 | 2006-12-21 | Electronic device including a selectively polable superlattice |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095148199A TW200733379A (en) | 2005-12-22 | 2006-12-21 | Electronic device including a poled superlattice having a net electrical dipole moment |
TW095148202A TW200746237A (en) | 2005-12-22 | 2006-12-21 | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
Country Status (3)
Country | Link |
---|---|
US (4) | US20070187667A1 (zh) |
TW (4) | TWI334646B (zh) |
WO (2) | WO2007076008A2 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
TWI334646B (en) * | 2005-12-22 | 2010-12-11 | Mears Technologies Inc | Electronic device including a selectively polable superlattice |
JP2010287744A (ja) * | 2009-06-11 | 2010-12-24 | Elpida Memory Inc | 固体メモリ、データ処理システム及びデータ処理装置 |
US8324783B1 (en) | 2012-04-24 | 2012-12-04 | UltraSolar Technology, Inc. | Non-decaying electric power generation from pyroelectric materials |
CN105900241B (zh) | 2013-11-22 | 2020-07-24 | 阿托梅拉公司 | 包括超晶格耗尽层堆叠的半导体装置和相关方法 |
WO2015077595A1 (en) | 2013-11-22 | 2015-05-28 | Mears Technologies, Inc. | Vertical semiconductor devices including superlattice punch through stop layer and related methods |
WO2015181648A1 (en) | 2014-05-27 | 2015-12-03 | The Silanna Group Pty Limited | An optoelectronic device |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
CN106415854B (zh) * | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 包括n型和p型超晶格的电子装置 |
WO2015191561A1 (en) | 2014-06-09 | 2015-12-17 | Mears Technologies, Inc. | Semiconductor devices with enhanced deterministic doping and related methods |
DE102014109147A1 (de) * | 2014-06-30 | 2015-12-31 | Infineon Technologies Ag | Feldeffekthalbleiter-Bauelement sowie Verfahren zu dessen Betrieb und Herstellung |
US9722046B2 (en) | 2014-11-25 | 2017-08-01 | Atomera Incorporated | Semiconductor device including a superlattice and replacement metal gate structure and related methods |
WO2016187038A1 (en) | 2015-05-15 | 2016-11-24 | Atomera Incorporated | Semiconductor devices with superlattice and punch-through stop (pts) layers at different depths and related methods |
US9721790B2 (en) | 2015-06-02 | 2017-08-01 | Atomera Incorporated | Method for making enhanced semiconductor structures in single wafer processing chamber with desired uniformity control |
US9558939B1 (en) | 2016-01-15 | 2017-01-31 | Atomera Incorporated | Methods for making a semiconductor device including atomic layer structures using N2O as an oxygen source |
KR20180097377A (ko) * | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 제조 방법 |
US10614868B2 (en) * | 2018-04-16 | 2020-04-07 | Samsung Electronics Co., Ltd. | Memory device with strong polarization coupling |
US11837634B2 (en) | 2020-07-02 | 2023-12-05 | Atomera Incorporated | Semiconductor device including superlattice with oxygen and carbon monolayers |
TWI803219B (zh) * | 2021-03-03 | 2023-05-21 | 美商安托梅拉公司 | 包含具超晶格之接地面層之射頻半導體元件及相關方法 |
Family Cites Families (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4485128A (en) * | 1981-11-20 | 1984-11-27 | Chronar Corporation | Bandgap control in amorphous semiconductors |
JPH0656887B2 (ja) * | 1982-02-03 | 1994-07-27 | 株式会社日立製作所 | 半導体装置およびその製法 |
US4594603A (en) * | 1982-04-22 | 1986-06-10 | Board Of Trustees Of The University Of Illinois | Semiconductor device with disordered active region |
DE3431164A1 (de) * | 1984-02-08 | 1985-08-14 | Gerhard 7262 Althengstett Kurz | Staubsauger |
US4590399A (en) * | 1984-02-28 | 1986-05-20 | Exxon Research And Engineering Co. | Superlattice piezoelectric devices |
US4882609A (en) * | 1984-11-19 | 1989-11-21 | Max-Planck Gesellschaft Zur Forderung Der Wissenschafter E.V. | Semiconductor devices with at least one monoatomic layer of doping atoms |
JPS61210679A (ja) * | 1985-03-15 | 1986-09-18 | Sony Corp | 半導体装置 |
US5281518A (en) * | 1986-05-01 | 1994-01-25 | Washington Research Foundation | Detection of a unique chlamydia strain associated with acute respiratory disease |
US4908678A (en) * | 1986-10-08 | 1990-03-13 | Semiconductor Energy Laboratory Co., Ltd. | FET with a super lattice channel |
US4733431A (en) * | 1986-12-09 | 1988-03-29 | Whirlpool Corporation | Vacuum cleaner with performance monitoring system |
US4733430A (en) * | 1986-12-09 | 1988-03-29 | Whirlpool Corporation | Vacuum cleaner with operating condition indicator system |
JPH0824652B2 (ja) * | 1988-12-06 | 1996-03-13 | 松下電器産業株式会社 | 電気掃除機 |
US5081513A (en) * | 1991-02-28 | 1992-01-14 | Xerox Corporation | Electronic device with recovery layer proximate to active layer |
KR930005714B1 (ko) * | 1991-06-25 | 1993-06-24 | 주식회사 금성사 | 진공 청소기의 흡입력 제어방법 및 장치 |
JPH05198293A (ja) * | 1992-01-20 | 1993-08-06 | Sanyo Electric Co Ltd | 電池パック |
US5216262A (en) * | 1992-03-02 | 1993-06-01 | Raphael Tsu | Quantum well structures useful for semiconductor devices |
JPH0643482A (ja) * | 1992-07-24 | 1994-02-18 | Matsushita Electric Ind Co Ltd | 空間光変調素子およびその製造方法 |
US6310373B1 (en) * | 1992-10-23 | 2001-10-30 | Symetrix Corporation | Metal insulator semiconductor structure with polarization-compatible buffer layer |
US5955754A (en) * | 1992-10-23 | 1999-09-21 | Symetrix Corporation | Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
US20030152813A1 (en) * | 1992-10-23 | 2003-08-14 | Symetrix Corporation | Lanthanide series layered superlattice materials for integrated circuit appalications |
US5357119A (en) * | 1993-02-19 | 1994-10-18 | Board Of Regents Of The University Of California | Field effect devices having short period superlattice structures using Si and Ge |
US5606177A (en) * | 1993-10-29 | 1997-02-25 | Texas Instruments Incorporated | Silicon oxide resonant tunneling diode structure |
US5507067A (en) * | 1994-05-12 | 1996-04-16 | Newtronics Pty Ltd. | Electronic vacuum cleaner control system |
US5466949A (en) * | 1994-08-04 | 1995-11-14 | Texas Instruments Incorporated | Silicon oxide germanium resonant tunneling |
US5627386A (en) * | 1994-08-11 | 1997-05-06 | The United States Of America As Represented By The Secretary Of The Army | Silicon nanostructure light-emitting diode |
US5561302A (en) * | 1994-09-26 | 1996-10-01 | Motorola, Inc. | Enhanced mobility MOSFET device and method |
US5577061A (en) * | 1994-12-16 | 1996-11-19 | Hughes Aircraft Company | Superlattice cladding layers for mid-infrared lasers |
FR2734097B1 (fr) * | 1995-05-12 | 1997-06-06 | Thomson Csf | Laser a semiconducteurs |
US5608944A (en) * | 1995-06-05 | 1997-03-11 | The Hoover Company | Vacuum cleaner with dirt detection |
US6326650B1 (en) * | 1995-08-03 | 2001-12-04 | Jeremy Allam | Method of forming a semiconductor structure |
US6344271B1 (en) * | 1998-11-06 | 2002-02-05 | Nanoenergy Corporation | Materials and products using nanostructured non-stoichiometric substances |
US5815884A (en) * | 1996-11-27 | 1998-10-06 | Yashima Electric Co., Ltd. | Dust indication system for vacuum cleaner |
JPH10173177A (ja) * | 1996-12-10 | 1998-06-26 | Mitsubishi Electric Corp | Misトランジスタの製造方法 |
US6058127A (en) * | 1996-12-13 | 2000-05-02 | Massachusetts Institute Of Technology | Tunable microcavity and method of using nonlinear materials in a photonic crystal |
US5994164A (en) * | 1997-03-18 | 1999-11-30 | The Penn State Research Foundation | Nanostructure tailoring of material properties using controlled crystallization |
US6255150B1 (en) * | 1997-10-23 | 2001-07-03 | Texas Instruments Incorporated | Use of crystalline SiOx barriers for Si-based resonant tunneling diodes |
US6376337B1 (en) * | 1997-11-10 | 2002-04-23 | Nanodynamics, Inc. | Epitaxial SiOx barrier/insulation layer |
JP3443343B2 (ja) * | 1997-12-03 | 2003-09-02 | 松下電器産業株式会社 | 半導体装置 |
JP3547037B2 (ja) * | 1997-12-04 | 2004-07-28 | 株式会社リコー | 半導体積層構造及び半導体発光素子 |
US6608327B1 (en) * | 1998-02-27 | 2003-08-19 | North Carolina State University | Gallium nitride semiconductor structure including laterally offset patterned layers |
JP3854731B2 (ja) * | 1998-03-30 | 2006-12-06 | シャープ株式会社 | 微細構造の製造方法 |
RU2142665C1 (ru) * | 1998-08-10 | 1999-12-10 | Швейкин Василий Иванович | Инжекционный лазер |
US6586835B1 (en) * | 1998-08-31 | 2003-07-01 | Micron Technology, Inc. | Compact system module with built-in thermoelectric cooling |
JP3592981B2 (ja) * | 1999-01-14 | 2004-11-24 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
ATE452445T1 (de) * | 1999-03-04 | 2010-01-15 | Nichia Corp | Nitridhalbleiterlaserelement |
US6350993B1 (en) * | 1999-03-12 | 2002-02-26 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
US6151241A (en) * | 1999-05-19 | 2000-11-21 | Symetrix Corporation | Ferroelectric memory with disturb protection |
US6281532B1 (en) * | 1999-06-28 | 2001-08-28 | Intel Corporation | Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering |
US6570898B2 (en) * | 1999-09-29 | 2003-05-27 | Xerox Corporation | Structure and method for index-guided buried heterostructure AlGalnN laser diodes |
US6501092B1 (en) * | 1999-10-25 | 2002-12-31 | Intel Corporation | Integrated semiconductor superlattice optical modulator |
RU2173003C2 (ru) * | 1999-11-25 | 2001-08-27 | Септре Электроникс Лимитед | Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств |
WO2001071816A1 (en) * | 2000-03-23 | 2001-09-27 | Symetrix Corporation | Ferroelectric fet with polycrystalline crystallographically oriented ferroelectric material |
US6956348B2 (en) * | 2004-01-28 | 2005-10-18 | Irobot Corporation | Debris sensor for cleaning apparatus |
DE10025264A1 (de) * | 2000-05-22 | 2001-11-29 | Max Planck Gesellschaft | Feldeffekt-Transistor auf der Basis von eingebetteten Clusterstrukturen und Verfahren zu seiner Herstellung |
US6571422B1 (en) * | 2000-08-01 | 2003-06-03 | The Hoover Company | Vacuum cleaner with a microprocessor-based dirt detection circuit |
US7902546B2 (en) * | 2000-08-08 | 2011-03-08 | Translucent, Inc. | Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon |
US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
US6638838B1 (en) * | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US20020100942A1 (en) * | 2000-12-04 | 2002-08-01 | Fitzgerald Eugene A. | CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs |
US6673646B2 (en) * | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6690699B2 (en) * | 2001-03-02 | 2004-02-10 | Lucent Technologies Inc | Quantum cascade laser with relaxation-stabilized injection |
US6646293B2 (en) * | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
WO2003025984A2 (en) * | 2001-09-21 | 2003-03-27 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
AU2003222003A1 (en) * | 2002-03-14 | 2003-09-29 | Amberwave Systems Corporation | Methods for fabricating strained layers on semiconductor substrates |
US6816530B2 (en) * | 2002-09-30 | 2004-11-09 | Lucent Technologies Inc. | Nonlinear semiconductor light sources |
US7023010B2 (en) * | 2003-04-21 | 2006-04-04 | Nanodynamics, Inc. | Si/C superlattice useful for semiconductor devices |
US20060223215A1 (en) * | 2003-06-26 | 2006-10-05 | Rj Mears, Llc | Method for Making a Microelectromechanical Systems (MEMS) Device Including a Superlattice |
US6830964B1 (en) * | 2003-06-26 | 2004-12-14 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
US7586165B2 (en) * | 2003-06-26 | 2009-09-08 | Mears Technologies, Inc. | Microelectromechanical systems (MEMS) device including a superlattice |
JP2007521650A (ja) * | 2003-07-02 | 2007-08-02 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス並びに量子井戸構造体を製造する方法及び量子井戸構造体を有する半導体デバイス |
US20070108502A1 (en) * | 2005-11-17 | 2007-05-17 | Sharp Laboratories Of America, Inc. | Nanocrystal silicon quantum dot memory device |
TWI334646B (en) * | 2005-12-22 | 2010-12-11 | Mears Technologies Inc | Electronic device including a selectively polable superlattice |
US7517702B2 (en) * | 2005-12-22 | 2009-04-14 | Mears Technologies, Inc. | Method for making an electronic device including a poled superlattice having a net electrical dipole moment |
-
2006
- 2006-12-21 TW TW095148208A patent/TWI334646B/zh active
- 2006-12-21 US US11/614,535 patent/US20070187667A1/en not_active Abandoned
- 2006-12-21 WO PCT/US2006/049009 patent/WO2007076008A2/en active Application Filing
- 2006-12-21 TW TW095148211A patent/TWI316294B/zh active
- 2006-12-21 TW TW095148199A patent/TW200733379A/zh unknown
- 2006-12-21 US US11/614,477 patent/US20070158640A1/en not_active Abandoned
- 2006-12-21 US US11/614,559 patent/US20070166928A1/en not_active Abandoned
- 2006-12-21 TW TW095148202A patent/TW200746237A/zh unknown
- 2006-12-21 WO PCT/US2006/048890 patent/WO2007075942A2/en active Application Filing
-
2010
- 2010-05-18 US US12/782,211 patent/US20100270535A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW200733379A (en) | 2007-09-01 |
US20100270535A1 (en) | 2010-10-28 |
WO2007075942A3 (en) | 2007-09-13 |
WO2007075942A2 (en) | 2007-07-05 |
TWI334646B (en) | 2010-12-11 |
US20070158640A1 (en) | 2007-07-12 |
US20070166928A1 (en) | 2007-07-19 |
WO2007076008A2 (en) | 2007-07-05 |
WO2007076008A3 (en) | 2007-09-20 |
TW200746237A (en) | 2007-12-16 |
US20070187667A1 (en) | 2007-08-16 |
TW200742060A (en) | 2007-11-01 |
TW200742059A (en) | 2007-11-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI316294B (en) | Method for making an electronic device including a selectively polable superlattice | |
EP2543971B8 (en) | A method for an electronic device | |
EP1917574A4 (en) | DEVICE AND METHOD FOR IDENTIFYING MOTION PATTERNS | |
EP1926158A4 (en) | METHOD AND DEVICE FOR PRODUCING A MAGNETORESISTIVE DEVICE | |
GB2419464B (en) | Organic electronic device and method for producing the same | |
EP1964194A4 (en) | METHOD AND DEVICE FOR PRODUCING A BATTERY AND BATTERY | |
AP2903A (en) | An apparatus for circumcising a penis | |
EP1880267A4 (en) | METHOD FOR ENTERING SIGNS IN AN ELECTRONIC DEVICE | |
GB2455215B (en) | Method for fabricating an organic electronic device | |
GB0523019D0 (en) | Automated immunoassay apparatus | |
GB0516246D0 (en) | A data entry device and method | |
EP1965414A4 (en) | EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS | |
EP1922749A4 (en) | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE | |
PL1779512T3 (pl) | Sposób sterowania zaworem elektronicznym | |
EP1925374A4 (en) | FOLDING DEVICE AND METHOD FOR MANAGING THE MATRIX, METHOD FOR ARRANGING THE MATRIX, AND METHOD FOR SELECTING THE MATRIX STORAGE ELEMENT | |
TWI348077B (en) | A method and apparatus for immersion lithography | |
GB2431370B (en) | An apparatus for electromagnetically forming a workpiece | |
TWI348203B (en) | Method for fabricating a integrated circuit | |
TWI348201B (en) | Method for forming narrow structures in a semiconductor device | |
EP1905075A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT | |
EP1791069A4 (en) | METHOD FOR DESIGNING ELECTRONIC COMPONENTS | |
EP1895582A4 (en) | SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF | |
SG133552A1 (en) | Lithographic apparatus and method for manufacturing a device | |
EP1850371A4 (en) | EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS | |
GB0523191D0 (en) | Apparatus and method for producing a hologram |