TW200614501A - Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated methods - Google Patents

Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated methods

Info

Publication number
TW200614501A
TW200614501A TW094130910A TW94130910A TW200614501A TW 200614501 A TW200614501 A TW 200614501A TW 094130910 A TW094130910 A TW 094130910A TW 94130910 A TW94130910 A TW 94130910A TW 200614501 A TW200614501 A TW 200614501A
Authority
TW
Taiwan
Prior art keywords
integrated circuit
optical device
active optical
energy band
superlattice
Prior art date
Application number
TW094130910A
Other languages
Chinese (zh)
Other versions
TWI282172B (en
Inventor
Robert J Mears
Robert John Stephenson
Original Assignee
Mears R J Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/936,933 external-priority patent/US20050032247A1/en
Application filed by Mears R J Llc filed Critical Mears R J Llc
Publication of TW200614501A publication Critical patent/TW200614501A/en
Application granted granted Critical
Publication of TWI282172B publication Critical patent/TWI282172B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

An integrated circuit may include at least one active optical device including a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The integrated circuit may further include a waveguide coupled to the at least one active optical device.
TW094130910A 2004-09-09 2005-09-08 Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated methods TWI282172B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/936,933 US20050032247A1 (en) 2003-06-26 2004-09-09 Method for making an integrated circuit comprising an active optical device having an energy band engineered superlattice
US10/936,903 US7432524B2 (en) 2003-06-26 2004-09-09 Integrated circuit comprising an active optical device having an energy band engineered superlattice

Publications (2)

Publication Number Publication Date
TW200614501A true TW200614501A (en) 2006-05-01
TWI282172B TWI282172B (en) 2007-06-01

Family

ID=35414689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130910A TWI282172B (en) 2004-09-09 2005-09-08 Integrated circuit comprising an active optical device having an energy band engineered superlattice and associated methods

Country Status (6)

Country Link
EP (1) EP1794805A1 (en)
JP (1) JP2008512873A (en)
AU (1) AU2005285192A1 (en)
CA (1) CA2579846A1 (en)
TW (1) TWI282172B (en)
WO (1) WO2006031601A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480607B (en) * 2011-12-15 2015-04-11 Alcatel Lucent Usa Inc Electronic/photonic integrated circuit architecture and method of manufacture thereof
TWI694613B (en) * 2018-04-12 2020-05-21 美商安托梅拉公司 Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007130973A1 (en) * 2006-05-01 2007-11-15 Mears Technologies, Inc. Semiconductor device including a dopant blocking superlattice and associated methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216262A (en) * 1992-03-02 1993-06-01 Raphael Tsu Quantum well structures useful for semiconductor devices
JP2982619B2 (en) * 1994-06-29 1999-11-29 日本電気株式会社 Semiconductor optical waveguide integrated photodetector
JPH08107253A (en) * 1994-08-12 1996-04-23 Mitsubishi Electric Corp Manufacturing method of photowaveguide, semiconductor, laser-waveguide integrated device, semiconductor laser-waveguide-photodiode integrated device, semiconductor laser-waveguide-mode matching integrated device, mode matching element
US5682455A (en) * 1996-02-29 1997-10-28 Northern Telecom Limited Semiconductor optical waveguide

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI480607B (en) * 2011-12-15 2015-04-11 Alcatel Lucent Usa Inc Electronic/photonic integrated circuit architecture and method of manufacture thereof
US9423560B2 (en) 2011-12-15 2016-08-23 Alcatel Lucent Electronic/photonic integrated circuit architecture and method of manufacture thereof
TWI694613B (en) * 2018-04-12 2020-05-21 美商安托梅拉公司 Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice
US10884185B2 (en) 2018-04-12 2021-01-05 Atomera Incorporated Semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice
US11355667B2 (en) 2018-04-12 2022-06-07 Atomera Incorporated Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

Also Published As

Publication number Publication date
WO2006031601A9 (en) 2006-08-03
WO2006031601A1 (en) 2006-03-23
CA2579846A1 (en) 2006-03-23
EP1794805A1 (en) 2007-06-13
AU2005285192A1 (en) 2006-03-23
TWI282172B (en) 2007-06-01
JP2008512873A (en) 2008-04-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees