TW200707724A - Semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer - Google Patents

Semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer

Info

Publication number
TW200707724A
TW200707724A TW095123912A TW95123912A TW200707724A TW 200707724 A TW200707724 A TW 200707724A TW 095123912 A TW095123912 A TW 095123912A TW 95123912 A TW95123912 A TW 95123912A TW 200707724 A TW200707724 A TW 200707724A
Authority
TW
Taiwan
Prior art keywords
semiconductor
superlattice
soi
insulator
configuration
Prior art date
Application number
TW095123912A
Other languages
Chinese (zh)
Inventor
Kalipatnam Vivek Rao
Original Assignee
Mears R J Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mears R J Llc filed Critical Mears R J Llc
Publication of TW200707724A publication Critical patent/TW200707724A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A semiconductor device may include a substrate, an insulating layer on the substrate, and a semiconductor layer on the insulating layer on a side thereof opposite the substrate. The semiconductor device may farther include a superlattice on the semiconductor layer on a side thereof opposite the insulating layer. The superlattice may include a plurality of stacked groups of layers, with each group comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon. The at least one non-semiconductor monolayer may be constrained within a crystal lattice of adjacent base semiconductor portions.
TW095123912A 2005-06-30 2006-06-30 Semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer TW200707724A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69558805P 2005-06-30 2005-06-30

Publications (1)

Publication Number Publication Date
TW200707724A true TW200707724A (en) 2007-02-16

Family

ID=37068469

Family Applications (2)

Application Number Title Priority Date Filing Date
TW095123912A TW200707724A (en) 2005-06-30 2006-06-30 Semiconductor device having a semiconductor-on-insulator (SOI) configuration and including a superlattice on a thin semiconductor layer
TW095123904A TWI311373B (en) 2005-06-30 2006-06-30 Method for making a semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW095123904A TWI311373B (en) 2005-06-30 2006-06-30 Method for making a semiconductor device having a semiconductor-on-insulator (soi) configuration and including a superlattice on a thin semiconductor layer

Country Status (7)

Country Link
EP (1) EP1920466A1 (en)
JP (1) JP2008544581A (en)
CN (1) CN101278400A (en)
AU (1) AU2006265096A1 (en)
CA (1) CA2612243A1 (en)
TW (2) TW200707724A (en)
WO (1) WO2007005862A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9954154B2 (en) 2012-04-10 2018-04-24 Ud Holdings, Llc Superlattice quantum well thermoelectric generator via radiation exchange and/or conduction/convection
US9941359B2 (en) 2015-05-15 2018-04-10 Atomera Incorporated Semiconductor devices with superlattice and punch-through stop (PTS) layers at different depths and related methods
EP3776073A1 (en) * 2018-04-12 2021-02-17 Atomera Incorporated Semiconductor device and method including vertically integrated optical and electronic devices and comprising a superlattice

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03270072A (en) * 1990-03-20 1991-12-02 Fujitsu Ltd Manufacture of semiconductor device
US5216262A (en) * 1992-03-02 1993-06-01 Raphael Tsu Quantum well structures useful for semiconductor devices
US5461243A (en) * 1993-10-29 1995-10-24 International Business Machines Corporation Substrate for tensilely strained semiconductor
US6376337B1 (en) * 1997-11-10 2002-04-23 Nanodynamics, Inc. Epitaxial SiOx barrier/insulation layer
AU2004300982B2 (en) * 2003-06-26 2007-10-25 Mears Technologies, Inc. Semiconductor device including MOSFET having band-engineered superlattice
US6830964B1 (en) * 2003-06-26 2004-12-14 Rj Mears, Llc Method for making semiconductor device including band-engineered superlattice

Also Published As

Publication number Publication date
WO2007005862A1 (en) 2007-01-11
EP1920466A1 (en) 2008-05-14
TWI311373B (en) 2009-06-21
JP2008544581A (en) 2008-12-04
CA2612243A1 (en) 2007-01-11
AU2006265096A1 (en) 2007-01-11
TW200707723A (en) 2007-02-16
CN101278400A (en) 2008-10-01

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