TW200714953A - Method of manufacturing display panel for flexible display device - Google Patents

Method of manufacturing display panel for flexible display device

Info

Publication number
TW200714953A
TW200714953A TW095129199A TW95129199A TW200714953A TW 200714953 A TW200714953 A TW 200714953A TW 095129199 A TW095129199 A TW 095129199A TW 95129199 A TW95129199 A TW 95129199A TW 200714953 A TW200714953 A TW 200714953A
Authority
TW
Taiwan
Prior art keywords
films
sputtering
display panel
torr
thin film
Prior art date
Application number
TW095129199A
Other languages
English (en)
Inventor
Sung-Jin Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200714953A publication Critical patent/TW200714953A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW095129199A 2005-09-23 2006-08-09 Method of manufacturing display panel for flexible display device TW200714953A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050088798A KR20070034280A (ko) 2005-09-23 2005-09-23 가요성 표시 장치용 표시판의 제조 방법

Publications (1)

Publication Number Publication Date
TW200714953A true TW200714953A (en) 2007-04-16

Family

ID=37894596

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095129199A TW200714953A (en) 2005-09-23 2006-08-09 Method of manufacturing display panel for flexible display device

Country Status (5)

Country Link
US (1) US7572658B2 (zh)
JP (1) JP2007086789A (zh)
KR (1) KR20070034280A (zh)
CN (1) CN1936664A (zh)
TW (1) TW200714953A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298431B2 (en) 2008-08-28 2012-10-30 Au Optronics Corporation Manufacturing method of flexible display panel and manufacturing method of electro-optical apparatus
TWI500006B (zh) * 2008-10-10 2015-09-11 尼康股份有限公司 A flexible substrate, a manufacturing method of a display element, and a manufacturing apparatus for a display device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101304413B1 (ko) * 2006-10-25 2013-09-10 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
JP2008281799A (ja) * 2007-05-11 2008-11-20 Ulvac Japan Ltd 液晶表示装置の製造方法
CN106291995A (zh) * 2015-05-12 2017-01-04 上海和辉光电有限公司 一种激光修补线缺陷的方法
CN107993918A (zh) * 2017-11-09 2018-05-04 信利半导体有限公司 一种柔性显示器的制备方法
JP7344851B2 (ja) * 2018-11-28 2023-09-14 株式会社半導体エネルギー研究所 液晶表示装置
CN114442387A (zh) * 2020-10-30 2022-05-06 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
JPH0756131A (ja) 1993-08-12 1995-03-03 Tonen Chem Corp 透明導電膜の製造方法
JPH08124850A (ja) 1994-10-28 1996-05-17 Toshiba Microelectron Corp 半導体装置の製造方法
JPH09195035A (ja) 1996-01-10 1997-07-29 Teijin Ltd 透明導電性フィルムの製造装置
KR19980083821A (ko) 1997-05-19 1998-12-05 서상기 스퍼터링법에 의한 전자파 차폐용 금속박막 제조장치 및 제조방법
JP2000129436A (ja) 1998-08-19 2000-05-09 Asahi Glass Co Ltd インライン型スパッタリング装置およびスパッタリング方法
JP4138971B2 (ja) 1998-11-06 2008-08-27 株式会社アルバック プラスチック製基材の表面処理法および被覆プラスチック物品
US6274412B1 (en) * 1998-12-21 2001-08-14 Parelec, Inc. Material and method for printing high conductivity electrical conductors and other components on thin film transistor arrays
KR20010028341A (ko) 1999-09-21 2001-04-06 주덕영 분말 타겟을 이용한 투명전도성 박막의 저온 제조 방법
US6720119B2 (en) * 2000-07-27 2004-04-13 Fuji Xerox Co., Ltd. Method of fabricating high-dielectric color filter
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
KR100376960B1 (ko) 2001-03-27 2003-03-29 임조섭 플라스틱 기판상에 전자파 차폐용 기능막을 형성하는방법과 이를 통한 전자파 차폐 장치
US20020195928A1 (en) * 2001-06-25 2002-12-26 Grace Anthony J. Electroluminescent display device and method of making
TW564471B (en) * 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
DE10237311A1 (de) 2001-08-14 2003-05-22 Samsung Corning Co Vorrichtung und Verfahren zum Aufbringen von Dünnschichten auf einen Glasträger
US7351300B2 (en) * 2001-08-22 2008-04-01 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
WO2003096757A1 (en) * 2002-05-08 2003-11-20 Zeolux Corporation Feedback enhanced ligth emitting device
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
KR100686494B1 (ko) * 2002-12-30 2007-02-23 엘지.필립스 엘시디 주식회사 금속막 증착을 위한 스퍼터와 스퍼터를 이용한 액정 표시장치의 제조법
TWI360702B (en) 2003-03-07 2012-03-21 Semiconductor Energy Lab Liquid crystal display device and method for manuf
KR20030037240A (ko) 2003-03-27 2003-05-12 (주) 월드비젼 연속 증착 방식에 의한 전자파 차폐용 기능성 박막 제조 방법 및 그 제조 장치
KR100593804B1 (ko) 2003-04-01 2006-06-28 아이티엠 주식회사 플라스틱 기판 상의 고 응착력 박막 형성 방법
US20050099615A1 (en) * 2003-06-03 2005-05-12 Fusao Ishii System for fabricating electronic modules on substrates having arbitrary and unexpected dimensional changes
KR100514000B1 (ko) 2003-08-20 2005-09-13 학교법인 성균관대학 박막트랜지스터 및 그 제조방법
KR100691507B1 (ko) 2003-12-01 2007-03-09 삼성전자주식회사 플라스틱 기판의 적층 방법 및 이를 이용한 유연성을 갖는기판의 제조방법
KR100628272B1 (ko) * 2004-06-30 2006-09-27 엘지.필립스 엘시디 주식회사 Ｃｏｔ형 액정표시소자의 제조방법
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7381586B2 (en) * 2005-06-16 2008-06-03 Industrial Technology Research Institute Methods for manufacturing thin film transistors that include selectively forming an active channel layer from a solution

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298431B2 (en) 2008-08-28 2012-10-30 Au Optronics Corporation Manufacturing method of flexible display panel and manufacturing method of electro-optical apparatus
TWI384434B (zh) * 2008-08-28 2013-02-01 Au Optronics Corp 可撓式顯示面板及其製造方法、光電裝置及其製造方法
TWI500006B (zh) * 2008-10-10 2015-09-11 尼康股份有限公司 A flexible substrate, a manufacturing method of a display element, and a manufacturing apparatus for a display device
US9178155B2 (en) 2008-10-10 2015-11-03 Nikon Corporation Flexible substrate, manufacturing method of display element, and manufacturing apparatus of display element

Also Published As

Publication number Publication date
CN1936664A (zh) 2007-03-28
US7572658B2 (en) 2009-08-11
KR20070034280A (ko) 2007-03-28
US20070072323A1 (en) 2007-03-29
JP2007086789A (ja) 2007-04-05

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