TW200712778A - Novel positive photosensitive polybenzoxazole precursor compositions - Google Patents
Novel positive photosensitive polybenzoxazole precursor compositionsInfo
- Publication number
- TW200712778A TW200712778A TW095130113A TW95130113A TW200712778A TW 200712778 A TW200712778 A TW 200712778A TW 095130113 A TW095130113 A TW 095130113A TW 95130113 A TW95130113 A TW 95130113A TW 200712778 A TW200712778 A TW 200712778A
- Authority
- TW
- Taiwan
- Prior art keywords
- polybenzoxazole precursor
- composition
- positive photosensitive
- polymer
- precursor compositions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US70899405P | 2005-08-17 | 2005-08-17 | |
US81061106P | 2006-06-02 | 2006-06-02 | |
US11/500,251 US7803510B2 (en) | 2005-08-17 | 2006-08-07 | Positive photosensitive polybenzoxazole precursor compositions |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200712778A true TW200712778A (en) | 2007-04-01 |
TWI409590B TWI409590B (zh) | 2013-09-21 |
Family
ID=37758287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095130113A TWI409590B (zh) | 2005-08-17 | 2006-08-16 | 新穎的正型光敏性聚苯并唑前驅組成物 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7803510B2 (zh) |
EP (1) | EP1946185A2 (zh) |
JP (1) | JP5030955B2 (zh) |
KR (1) | KR20080036225A (zh) |
TW (1) | TWI409590B (zh) |
WO (1) | WO2007022124A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8703367B2 (en) | 2008-09-29 | 2014-04-22 | Cheil Industries Inc. | Positive photosensitive resin composition |
US8841064B2 (en) | 2010-12-31 | 2014-09-23 | Cheil Industries Inc. | Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film |
US9176381B2 (en) | 2009-12-29 | 2015-11-03 | Cheil Industries Inc. | Positive type photosensitive resin composition |
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WO2007034604A1 (ja) * | 2005-09-22 | 2007-03-29 | Hitachi Chemical Dupont Microsystems Ltd. | ネガ型感光性樹脂組成物、パターン形成方法及び電子部品 |
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US8211614B2 (en) * | 2006-08-04 | 2012-07-03 | Dongwoo Fine-Chem. Co., Ltd. | Photoresist composition and patterning method thereof |
JP4911454B2 (ja) * | 2006-09-19 | 2012-04-04 | 富士フイルム株式会社 | ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法 |
JP5205772B2 (ja) * | 2007-03-01 | 2013-06-05 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物、硬化膜、保護膜、絶縁膜およびそれを用いた半導体装置、表示体装置 |
JP4931644B2 (ja) * | 2007-03-02 | 2012-05-16 | 旭化成イーマテリアルズ株式会社 | 感光性樹脂組成物 |
WO2008111470A1 (ja) * | 2007-03-12 | 2008-09-18 | Hitachi Chemical Dupont Microsystems, Ltd. | 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品 |
JP5332326B2 (ja) * | 2007-06-18 | 2013-11-06 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
JP5120539B2 (ja) * | 2007-08-31 | 2013-01-16 | 国立大学法人豊橋技術科学大学 | 耐熱性樹脂組成物 |
TW200927832A (en) * | 2007-10-16 | 2009-07-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
KR101275474B1 (ko) * | 2007-10-29 | 2013-06-14 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | 포지티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품 |
JP2009222733A (ja) * | 2008-01-25 | 2009-10-01 | Rohm & Haas Electronic Materials Llc | ノボラック樹脂ブレンドを含むフォトレジスト |
WO2009099954A1 (en) * | 2008-02-04 | 2009-08-13 | Fujifilm Electronic Materials U.S.A., Inc. | Novel positive photosensitive resin compositions |
KR100932765B1 (ko) * | 2008-02-28 | 2009-12-21 | 한양대학교 산학협력단 | 폴리이미드-폴리벤조옥사졸 공중합체, 이의 제조방법, 및이를 포함하는 기체 분리막 |
JP2009282513A (ja) * | 2008-04-23 | 2009-12-03 | Asahi Kasei E-Materials Corp | 感光性樹脂組成物及びそれを用いた感光性フィルム |
JP5213518B2 (ja) * | 2008-05-13 | 2013-06-19 | 国立大学法人豊橋技術科学大学 | 耐熱性樹脂組成物 |
CA2640517A1 (en) * | 2008-05-19 | 2009-11-19 | Industry-University Cooperation Foundation, Hanyang University | Polyamic acids dope composition, preparation method of hollow fiber using the same and hollow fiber prepared therefrom |
US8013103B2 (en) * | 2008-10-10 | 2011-09-06 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
US8487064B2 (en) | 2008-10-10 | 2013-07-16 | Industry-University Cooperation Foundation, Hanyang University | Polymer compounds and a preparation method thereof |
US20100240220A1 (en) * | 2009-03-20 | 2010-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process for stripping photoresist and removing dielectric liner |
KR101692758B1 (ko) * | 2013-10-23 | 2017-01-04 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자 |
KR101750463B1 (ko) * | 2013-11-26 | 2017-06-23 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자 |
KR101728820B1 (ko) * | 2013-12-12 | 2017-04-20 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자 |
KR101705755B1 (ko) * | 2013-12-19 | 2017-02-10 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자 |
JP6138067B2 (ja) * | 2014-02-03 | 2017-05-31 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | ノボラック樹脂ブレンドを含むフォトレジスト |
KR102585279B1 (ko) * | 2014-10-02 | 2023-10-05 | 에이치디 마이크로시스템즈 가부시키가이샤 | 포지티브형 감광성 수지 조성물, 패턴 경화막의 제조 방법, 경화물, 층간 절연막, 커버 코트층, 표면 보호막 및 전자 부품 |
CN104356389A (zh) * | 2014-11-21 | 2015-02-18 | 沈阳化工大学 | 聚(亚萘基)苯并二噁唑的制备方法 |
TWI731961B (zh) | 2016-04-19 | 2021-07-01 | 德商馬克專利公司 | 正向感光材料及形成正向凸紋影像之方法 |
KR102288387B1 (ko) * | 2018-09-03 | 2021-08-10 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 전자 소자 |
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US11515234B2 (en) * | 2020-12-03 | 2022-11-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package including promoters and method of manufacturing the same |
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TWI776586B (zh) * | 2021-07-09 | 2022-09-01 | 律勝科技股份有限公司 | 聚苯并噁唑前驅物及其應用 |
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KR20060004908A (ko) * | 2003-03-11 | 2006-01-16 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 새로운 감광성 수지 조성물들 |
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WO2004111726A2 (en) * | 2003-06-06 | 2004-12-23 | Fujifilm Electronic Materials U.S.A., Inc. | Novel photosensitive resin compositions |
JP4244309B2 (ja) * | 2003-09-12 | 2009-03-25 | 富士フイルム株式会社 | 平版印刷版原版 |
TWI363249B (en) * | 2003-10-15 | 2012-05-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
US7687208B2 (en) * | 2006-08-15 | 2010-03-30 | Asahi Kasei Emd Corporation | Positive photosensitive resin composition |
-
2006
- 2006-08-07 US US11/500,251 patent/US7803510B2/en active Active
- 2006-08-15 JP JP2008527040A patent/JP5030955B2/ja active Active
- 2006-08-15 KR KR1020087006447A patent/KR20080036225A/ko not_active Application Discontinuation
- 2006-08-15 WO PCT/US2006/031725 patent/WO2007022124A2/en active Application Filing
- 2006-08-15 EP EP06789760A patent/EP1946185A2/en not_active Withdrawn
- 2006-08-16 TW TW095130113A patent/TWI409590B/zh active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8703367B2 (en) | 2008-09-29 | 2014-04-22 | Cheil Industries Inc. | Positive photosensitive resin composition |
US9176381B2 (en) | 2009-12-29 | 2015-11-03 | Cheil Industries Inc. | Positive type photosensitive resin composition |
TWI514078B (zh) * | 2009-12-29 | 2015-12-21 | Cheil Ind Inc | 正型光敏性樹脂組成物 |
US8841064B2 (en) | 2010-12-31 | 2014-09-23 | Cheil Industries Inc. | Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film |
Also Published As
Publication number | Publication date |
---|---|
WO2007022124A2 (en) | 2007-02-22 |
US7803510B2 (en) | 2010-09-28 |
JP5030955B2 (ja) | 2012-09-19 |
EP1946185A2 (en) | 2008-07-23 |
WO2007022124A3 (en) | 2007-11-22 |
TWI409590B (zh) | 2013-09-21 |
KR20080036225A (ko) | 2008-04-25 |
JP2009505157A (ja) | 2009-02-05 |
US20070099111A1 (en) | 2007-05-03 |
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