WO2011008042A3 - 폴리이미드 및 이를 포함하는 감광성 수지 조성물 - Google Patents

폴리이미드 및 이를 포함하는 감광성 수지 조성물 Download PDF

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Publication number
WO2011008042A3
WO2011008042A3 PCT/KR2010/004634 KR2010004634W WO2011008042A3 WO 2011008042 A3 WO2011008042 A3 WO 2011008042A3 KR 2010004634 W KR2010004634 W KR 2010004634W WO 2011008042 A3 WO2011008042 A3 WO 2011008042A3
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polyimide
light
resin composition
sensitive resin
same
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PCT/KR2010/004634
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English (en)
French (fr)
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WO2011008042A2 (ko
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김상우
박찬효
김경준
성혜란
신세진
정혜원
조정호
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주식회사 엘지화학
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Priority to CN2010800151393A priority Critical patent/CN102388086A/zh
Priority to JP2011547830A priority patent/JP5645138B2/ja
Priority to US12/940,403 priority patent/US9012595B2/en
Publication of WO2011008042A2 publication Critical patent/WO2011008042A2/ko
Publication of WO2011008042A3 publication Critical patent/WO2011008042A3/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1042—Copolyimides derived from at least two different tetracarboxylic compounds or two different diamino compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1003—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

본 발명은 반도체의 Buffer coating에 적용되는 것으로서 폴리이미드 및 이를 포함하는 감광성 수지 조성물을 제공한다. 상기 폴리이미드는 화학식 1로 표시되는 폴리이미드 중합체이다. 또한, 본 발명은 1) BDA 계열의 70% 이상의 i-선 투과도를 가지는 가용성 폴리이미드; 2) 신장률이 40% 이상인 폴리아믹산; 3) 노볼락 수지 및 4) 다이아조나프토퀴논계 감광성 물질을 포함하며, 반도체의 Buffer coating의 요구 특성인 고해상도, 고감도, 우수한 필름 특성 및 기계적 물성을 가지는 감광성 수지 조성물을 제공한다.
PCT/KR2010/004634 2009-07-16 2010-07-16 폴리이미드 및 이를 포함하는 감광성 수지 조성물 WO2011008042A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2010800151393A CN102388086A (zh) 2009-07-16 2010-07-16 聚酰亚胺及含有该聚酰亚胺的光敏树脂组合物
JP2011547830A JP5645138B2 (ja) 2009-07-16 2010-07-16 ポリイミドおよびこれを含む感光性樹脂組成物
US12/940,403 US9012595B2 (en) 2009-07-16 2010-11-05 Polyimide and photoresist resin composition comprising thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0064932 2009-07-16
KR20090064932 2009-07-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/940,403 Continuation US9012595B2 (en) 2009-07-16 2010-11-05 Polyimide and photoresist resin composition comprising thereof

Publications (2)

Publication Number Publication Date
WO2011008042A2 WO2011008042A2 (ko) 2011-01-20
WO2011008042A3 true WO2011008042A3 (ko) 2011-06-09

Family

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PCT/KR2010/004634 WO2011008042A2 (ko) 2009-07-16 2010-07-16 폴리이미드 및 이를 포함하는 감광성 수지 조성물

Country Status (6)

Country Link
US (1) US9012595B2 (ko)
JP (1) JP5645138B2 (ko)
KR (1) KR101249686B1 (ko)
CN (1) CN102388086A (ko)
TW (1) TWI448512B (ko)
WO (1) WO2011008042A2 (ko)

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JP5721459B2 (ja) * 2011-02-04 2015-05-20 日本化薬株式会社 感光性樹脂組成物、これを用いた硬化物、および多層材料
KR101431486B1 (ko) * 2011-07-27 2014-08-20 주식회사 엘지화학 내 흡습성이 우수한 감광성 수지 조성물
CN104641293B (zh) * 2012-09-18 2019-04-19 旭化成株式会社 感光性树脂组合物
TWI471360B (zh) * 2012-12-26 2015-02-01 Ind Tech Res Inst 感光型聚亞醯胺及負型光阻組成物
CN105209974B (zh) * 2013-05-13 2020-05-29 日产化学工业株式会社 含有使用双酚醛的酚醛清漆树脂的抗蚀剂下层膜形成用组合物
KR101676534B1 (ko) * 2013-09-30 2016-11-15 주식회사 엘지화학 폴리이미드를 포함하는 열가소성 수지
KR101642563B1 (ko) * 2014-05-30 2016-07-25 주식회사 엘지화학 폴리이미드 공중합체를 포함하는 위상차 필름 및 이를 포함하는 디스플레이 장치
CN106687541B (zh) * 2014-07-22 2019-09-24 布鲁尔科技公司 聚酰亚胺用作用于3d ic应用的激光剥离材料
WO2016021746A1 (ko) * 2014-08-05 2016-02-11 연세대학교 산학협력단 고투과성 저위상차 무색 투명 폴리이미드 박막 및 이의 제조방법
SG11201807054RA (en) * 2016-03-28 2018-09-27 Toray Industries Resin composition, cured relief pattern thereof, and method for manufacturing semiconductor electronic component or semiconductor equipment using the same
CN105801787B (zh) * 2016-04-25 2018-05-22 宋芳 一种大分子结构光敏剂及其制备方法和用该光敏剂制备的光刻胶
KR102542260B1 (ko) * 2016-08-30 2023-06-13 주식회사 이엔에프테크놀로지 칼라필터용 박리액 조성물
KR101994976B1 (ko) 2016-10-24 2019-07-01 주식회사 엘지화학 폴리이미드계 블록 공중합체 및 이를 포함하는 폴리이미드계 필름
CN108885375B (zh) * 2016-11-28 2021-05-18 株式会社Lg化学 液晶取向膜、用于制备其的方法和使用其的液晶显示装置
JP6961342B2 (ja) * 2016-12-27 2021-11-05 サムスン エレクトロニクス カンパニー リミテッド ポリイミド樹脂およびポジ型感光性樹脂組成物
KR102065718B1 (ko) 2017-10-17 2020-02-11 주식회사 엘지화학 액정 배향막 및 이를 이용한 액정표시소자
KR102152075B1 (ko) * 2018-11-29 2020-09-04 (주)켐이 폴리이미드계 화합물 및 이를 포함하는 감광성 조성물
CN111416039A (zh) * 2019-01-07 2020-07-14 纽多维有限公司 制剂和层
US20210364919A1 (en) * 2019-01-23 2021-11-25 Microcosm Technology Co., Ltd. Photosensitive resin composition and application thereof
KR102551047B1 (ko) 2019-02-01 2023-07-04 주식회사 엘지화학 폴리이미드 필름, 이를 이용한 플렉서블 기판 및 플렉서블 기판을 포함하는 플렉서블 디스플레이
CN111303421A (zh) * 2019-11-20 2020-06-19 上海极紫科技有限公司 一种可用作正性光刻胶的聚酰亚胺树脂及其制备方法
CN111303422A (zh) * 2019-11-21 2020-06-19 上海极紫科技有限公司 一种可正性光刻胶用聚酰亚胺树脂及其制备方法
CN111423582B (zh) * 2020-01-09 2023-04-18 上海极紫科技有限公司 正性光刻胶用聚酰亚胺树脂及其制备方法
CN112940250B (zh) * 2021-02-02 2022-09-23 武汉柔显科技股份有限公司 感光性树脂组合物及感光性树脂膜
CN117487215B (zh) * 2023-09-28 2024-11-05 住井科技(深圳)有限公司 双Beta-二酮基元无色透明聚酰亚胺薄膜的制备方法

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US6685997B1 (en) * 1999-04-09 2004-02-03 Chisso Corporation Varnish composition and liquid-crystal display element
KR20040040662A (ko) * 2002-11-07 2004-05-13 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
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Publication number Publication date
TWI448512B (zh) 2014-08-11
US20110111341A1 (en) 2011-05-12
JP5645138B2 (ja) 2014-12-24
TW201122058A (en) 2011-07-01
CN102388086A (zh) 2012-03-21
US9012595B2 (en) 2015-04-21
KR101249686B1 (ko) 2013-04-05
JP2012516375A (ja) 2012-07-19
WO2011008042A2 (ko) 2011-01-20
KR20110007588A (ko) 2011-01-24

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