TW200633147A - Low-voltage, multiple thin-gate oxide and low-resistance gate electrode - Google Patents

Low-voltage, multiple thin-gate oxide and low-resistance gate electrode

Info

Publication number
TW200633147A
TW200633147A TW094145886A TW94145886A TW200633147A TW 200633147 A TW200633147 A TW 200633147A TW 094145886 A TW094145886 A TW 094145886A TW 94145886 A TW94145886 A TW 94145886A TW 200633147 A TW200633147 A TW 200633147A
Authority
TW
Taiwan
Prior art keywords
low
regions
layer
voltage
peripheral
Prior art date
Application number
TW094145886A
Other languages
English (en)
Other versions
TWI371829B (en
Inventor
Tuan Pham
Masaaki Higashitani
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Publication of TW200633147A publication Critical patent/TW200633147A/zh
Application granted granted Critical
Publication of TWI371829B publication Critical patent/TWI371829B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
TW094145886A 2004-12-22 2005-12-22 Low-voltage, multiple thin-gate oxide and low-resistance gate electrode TWI371829B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/021,693 US7202125B2 (en) 2004-12-22 2004-12-22 Low-voltage, multiple thin-gate oxide and low-resistance gate electrode

Publications (2)

Publication Number Publication Date
TW200633147A true TW200633147A (en) 2006-09-16
TWI371829B TWI371829B (en) 2012-09-01

Family

ID=36143766

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145886A TWI371829B (en) 2004-12-22 2005-12-22 Low-voltage, multiple thin-gate oxide and low-resistance gate electrode

Country Status (7)

Country Link
US (2) US7202125B2 (zh)
EP (1) EP1829103A1 (zh)
JP (1) JP4644258B2 (zh)
KR (1) KR100937896B1 (zh)
CN (1) CN101099236A (zh)
TW (1) TWI371829B (zh)
WO (1) WO2006069184A1 (zh)

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Also Published As

Publication number Publication date
TWI371829B (en) 2012-09-01
EP1829103A1 (en) 2007-09-05
US20070115725A1 (en) 2007-05-24
CN101099236A (zh) 2008-01-02
KR100937896B1 (ko) 2010-01-21
JP2008526029A (ja) 2008-07-17
US20060134845A1 (en) 2006-06-22
KR20070100250A (ko) 2007-10-10
US7202125B2 (en) 2007-04-10
WO2006069184A1 (en) 2006-06-29
JP4644258B2 (ja) 2011-03-02

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