TW200628249A - Sb-Te based alloy powder for sintering and sintered sputtering target prepared by sintering said powder, and method for preparing Sb-Te based alloy powder for sintering - Google Patents

Sb-Te based alloy powder for sintering and sintered sputtering target prepared by sintering said powder, and method for preparing Sb-Te based alloy powder for sintering

Info

Publication number
TW200628249A
TW200628249A TW094142758A TW94142758A TW200628249A TW 200628249 A TW200628249 A TW 200628249A TW 094142758 A TW094142758 A TW 094142758A TW 94142758 A TW94142758 A TW 94142758A TW 200628249 A TW200628249 A TW 200628249A
Authority
TW
Taiwan
Prior art keywords
powder
sintering
based alloy
sputtering target
alloy powder
Prior art date
Application number
TW094142758A
Other languages
English (en)
Other versions
TWI299010B (zh
Inventor
Hideyuki Takahashi
Original Assignee
Nikko Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikko Materials Co Ltd filed Critical Nikko Materials Co Ltd
Publication of TW200628249A publication Critical patent/TW200628249A/zh
Application granted granted Critical
Publication of TWI299010B publication Critical patent/TWI299010B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C12/00—Alloys based on antimony or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • B22F2009/041—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by mechanical alloying, e.g. blending, milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • B22F2009/043—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling by ball milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302—Metals or metalloids
    • G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/266—Sputtering or spin-coating layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
TW094142758A 2005-01-18 2005-12-05 Sb-Te based alloy powder for sintering and sintered sputtering target prepared by sintering said powder, and method for preparing Sb-Te based alloy powder for sintering TW200628249A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005009784 2005-01-18

Publications (2)

Publication Number Publication Date
TW200628249A true TW200628249A (en) 2006-08-16
TWI299010B TWI299010B (zh) 2008-07-21

Family

ID=36692086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094142758A TW200628249A (en) 2005-01-18 2005-12-05 Sb-Te based alloy powder for sintering and sintered sputtering target prepared by sintering said powder, and method for preparing Sb-Te based alloy powder for sintering

Country Status (9)

Country Link
US (1) US7947106B2 (zh)
EP (1) EP1840240B1 (zh)
JP (1) JP4615527B2 (zh)
KR (1) KR100947197B1 (zh)
CN (1) CN101103134B (zh)
AT (1) ATE463314T1 (zh)
DE (1) DE602005020509D1 (zh)
TW (1) TW200628249A (zh)
WO (1) WO2006077692A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI481725B (zh) * 2008-02-26 2015-04-21 Jx Nippon Mining & Metals Corp Sb-Te alloy powder for sintering, production method of the powder, and sintered body target
TWI488984B (zh) * 2007-09-13 2015-06-21 Jx Nippon Mining & Metals Corp A sintered body, a sintered body, a sputtering target and a sputtering target-supporting plate assembly
TWI626316B (zh) * 2014-03-25 2018-06-11 Jx Nippon Mining & Metals Corp Ｓｂ－Ｔｅ基合金燒結體濺鍍靶

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1826291B1 (en) * 2004-11-30 2014-10-29 JX Nippon Mining & Metals Corporation Sb-Te BASE ALLOY SINTERED SPATTERING TARGET
EP1829985B1 (en) * 2004-12-24 2013-10-16 JX Nippon Mining & Metals Corporation Sb-Te ALLOY SINTERING PRODUCT TARGET
KR20090051260A (ko) 2006-10-13 2009-05-21 닛코 킨조쿠 가부시키가이샤 Ｓｂ-Ｔｅ 기 합금 소결체 스퍼터링 타겟
US20090107834A1 (en) * 2007-10-29 2009-04-30 Applied Materials, Inc. Chalcogenide target and method
US9328411B2 (en) * 2008-02-08 2016-05-03 Jx Nippon Mining & Metals Corporation Ytterbium sputtering target and method of producing said target
US20110017590A1 (en) * 2008-03-17 2011-01-27 Jx Nippon Mining & Metals Corporation Sintered Compact Target and Method of Producing Sintered Compact
KR20190112857A (ko) 2009-05-27 2019-10-07 제이엑스금속주식회사 소결체 타겟 및 소결체의 제조 방법
KR20170020541A (ko) 2010-04-26 2017-02-22 제이엑스금속주식회사 Ｓｂ-Ｔｅ기 합금 소결체 스퍼터링 타깃
CN109226768A (zh) * 2018-10-09 2019-01-18 北京航空航天大学 一种过渡金属掺杂的碲化锑合金靶材的制备方法
CN113614281A (zh) * 2019-03-20 2021-11-05 Ｊｘ金属株式会社 溅射靶及溅射靶的制造方法
CN111531172B (zh) * 2020-05-29 2021-12-31 同济大学 高强度铝硅合金的3d打印工艺方法
CN112719278A (zh) * 2020-12-29 2021-04-30 先导薄膜材料（广东）有限公司 锗锑碲合金粉体的制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2970813B2 (ja) 1989-11-20 1999-11-02 株式会社東芝 スパッタリングターゲットおよびその製造方法，およびそのターゲットを用いて形成された記録薄膜，光ディスク
JPH1081962A (ja) 1996-09-06 1998-03-31 Sumitomo Metal Mining Co Ltd Ｇｅ−Ｔｅ−Ｓｂ系スパッタリング用ターゲット材の製造方法
JP3113639B2 (ja) 1998-10-29 2000-12-04 トヨタ自動車株式会社 合金粉末の製造方法
JP2001098366A (ja) 1999-07-26 2001-04-10 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123266A (ja) * 1999-10-21 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
JP2001123267A (ja) 1999-10-26 2001-05-08 Sanyo Special Steel Co Ltd Ｇｅ−Ｓｂ−Ｔｅ系スパッタリングターゲット材の製造方法
DE10017414A1 (de) * 2000-04-07 2001-10-11 Unaxis Materials Deutschland G Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung
JP2001342505A (ja) 2000-05-31 2001-12-14 Sanyo Special Steel Co Ltd 低融点ターゲット材およびその製造方法
JP2001342559A (ja) 2000-05-31 2001-12-14 Sanyo Special Steel Co Ltd Ｔｅ系合金ターゲット材の製造方法
JP2002358699A (ja) 2001-06-01 2002-12-13 Nikko Materials Co Ltd 相変化型光ディスク保護膜形成用スパッタリングターゲット及び該ターゲットを使用して相変化型光ディスク保護膜を形成した光記録媒体
US7156964B2 (en) * 2002-02-25 2007-01-02 Nippon Mining & Metals Co., Ltd. Sputtering target for phase-change memory, film for phase change memory formed by using the target, and method for producing the target
JP2004162109A (ja) * 2002-11-12 2004-06-10 Nikko Materials Co Ltd スパッタリングターゲット及び同製造用粉末
EP1826291B1 (en) * 2004-11-30 2014-10-29 JX Nippon Mining & Metals Corporation Sb-Te BASE ALLOY SINTERED SPATTERING TARGET

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI488984B (zh) * 2007-09-13 2015-06-21 Jx Nippon Mining & Metals Corp A sintered body, a sintered body, a sputtering target and a sputtering target-supporting plate assembly
TWI481725B (zh) * 2008-02-26 2015-04-21 Jx Nippon Mining & Metals Corp Sb-Te alloy powder for sintering, production method of the powder, and sintered body target
TWI626316B (zh) * 2014-03-25 2018-06-11 Jx Nippon Mining & Metals Corp Ｓｂ－Ｔｅ基合金燒結體濺鍍靶

Also Published As

Publication number Publication date
JP4615527B2 (ja) 2011-01-19
US7947106B2 (en) 2011-05-24
CN101103134A (zh) 2008-01-09
EP1840240A1 (en) 2007-10-03
DE602005020509D1 (de) 2010-05-20
TWI299010B (zh) 2008-07-21
EP1840240B1 (en) 2010-04-07
KR100947197B1 (ko) 2010-03-11
US20090071821A1 (en) 2009-03-19
CN101103134B (zh) 2010-07-07
ATE463314T1 (de) 2010-04-15
JPWO2006077692A1 (ja) 2008-08-07
WO2006077692A1 (ja) 2006-07-27
KR20070087144A (ko) 2007-08-27
EP1840240A4 (en) 2008-07-09

Similar Documents

Publication Publication Date Title
TW200628249A (en) Sb-Te based alloy powder for sintering and sintered sputtering target prepared by sintering said powder, and method for preparing Sb-Te based alloy powder for sintering
JP5452623B2 (ja) ナトリウム／モリブデン粉末圧縮体およびその同じものを製造するための方法
JP5954196B2 (ja) 円筒形Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP5324033B2 (ja) 圧密圧力の低いサブミクロン超硬合金粉末混合物の製造方法及び超硬合金粉末
EP1548148A4 (en) IRON SILICURE SPRAY TARGET AND METHOD OF MANUFACTURE
JP6490589B2 (ja) マグネトロンスパッタリング用ターゲット
CN101084324B (zh) Sb-Te系合金烧结体靶及其制造方法
JP2008179892A (ja) ＡｌＲｕスパッタリングターゲットの製造方法
JP5815678B2 (ja) 二ホウ化チタンターゲット
TWI518185B (zh) 碳化物／結合金屬之複合粉體
JP2012102358A (ja) Ｃｕ−Ｇａ合金粉末の製造方法及びＣｕ−Ｇａ合金粉末、並びにＣｕ−Ｇａ合金スパッタリングターゲットの製造方法及びＣｕ−Ｇａ合金スパッタリングターゲット
JP2006206966A (ja) スパッタリングターゲット材の製造方法
JP2006503983A (ja) 高圧での成形による鉄系構成部品の製造方法
JP6028714B2 (ja) Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP2012511629A (ja) 焼結された金属部材を製造するための半製品、半製品の製造方法並びに部材の製造
JP5505844B2 (ja) 酸化コバルト及び非磁性酸化物を有するＣｏＣｒＰｔに基づく合金スパッタリングターゲット及びその製造法
JP2016216775A (ja) Ａｇ−ＺｎＯ系電気接点材料及びその製造方法
JPH0214401B2 (zh)
CN107723656A (zh) 一种含Au纳米粒子梯度耐磨涂层的制备方法
JP2006218443A (ja) チタンまたはチタン系合金フィルターの製造方法
US20130008784A1 (en) Cocrpt-based alloy sputtering targets with cobalt oxide and non-magnetic oxide and manufacturing methods thereof
JP2015086434A (ja) Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JPH1046208A (ja) ＴｉＮｉ系合金焼結体の製造方法
Wu et al. Effects of preparation method on microstructure and performance of Ag-ZnO contact materials.
Doi et al. Effects on mechanical properties of titanium and titanium alloys processed by MIM