TW200625686A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device

Info

Publication number
TW200625686A
TW200625686A TW094130949A TW94130949A TW200625686A TW 200625686 A TW200625686 A TW 200625686A TW 094130949 A TW094130949 A TW 094130949A TW 94130949 A TW94130949 A TW 94130949A TW 200625686 A TW200625686 A TW 200625686A
Authority
TW
Taiwan
Prior art keywords
emitting device
semiconductor light
light
gan semiconductor
layer
Prior art date
Application number
TW094130949A
Other languages
English (en)
Inventor
Kentaro Tamura
Ken Nakahara
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200625686A publication Critical patent/TW200625686A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW094130949A 2004-09-08 2005-09-08 Semiconductor light-emitting device TW200625686A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004260524 2004-09-08

Publications (1)

Publication Number Publication Date
TW200625686A true TW200625686A (en) 2006-07-16

Family

ID=36036399

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094130949A TW200625686A (en) 2004-09-08 2005-09-08 Semiconductor light-emitting device

Country Status (4)

Country Link
US (1) US7582905B2 (zh)
JP (1) JPWO2006028118A1 (zh)
TW (1) TW200625686A (zh)
WO (1) WO2006028118A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201518A (zh) * 2010-03-22 2011-09-28 Lg伊诺特有限公司 发光器件、电极结构、发光器件封装以及照明系统

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US7582905B2 (en) * 2004-09-08 2009-09-01 Rohm Co., Ltd. Semiconductor light emitting device
US20070215998A1 (en) * 2006-03-20 2007-09-20 Chi Lin Technology Co., Ltd. LED package structure and method for manufacturing the same
US9111950B2 (en) 2006-09-28 2015-08-18 Philips Lumileds Lighting Company, Llc Process for preparing a semiconductor structure for mounting
US8410510B2 (en) 2007-07-03 2013-04-02 Nichia Corporation Semiconductor light emitting device and method for fabricating the same
KR100999756B1 (ko) * 2009-03-13 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
US8536618B2 (en) 2009-11-03 2013-09-17 The Regents Of The University Of California Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
US8319309B2 (en) * 2009-08-28 2012-11-27 Samsung Electro-Mechanics Co., Ltd. Semiconductor device and method for manufacturing of the same
TWI394299B (zh) * 2009-11-06 2013-04-21 Semileds Optoelectronics Co 具有外移式電極之垂直發光二極體
CN101847677B (zh) * 2010-04-07 2012-11-14 中国科学院半导体研究所 采用mvpe两步法制备氧化锌透明电极的方法
KR20120015651A (ko) * 2010-08-12 2012-02-22 서울옵토디바이스주식회사 개선된 광 추출 효율을 갖는 발광 다이오드
US20120205695A1 (en) * 2011-02-16 2012-08-16 Tzu-Han Lin Light-emitting diode device
JP2012186190A (ja) * 2011-03-03 2012-09-27 Central Glass Co Ltd ドライクリーニング方法
US9269870B2 (en) 2011-03-17 2016-02-23 Epistar Corporation Light-emitting device with intermediate layer
US9601657B2 (en) * 2011-03-17 2017-03-21 Epistar Corporation Light-emitting device
CN102169944B (zh) * 2011-04-06 2012-11-07 上海大学 Ag/ITO/氧化锌基复合透明电极的发光二极管及其制备方法
JP5629669B2 (ja) * 2011-10-11 2014-11-26 株式会社東芝 半導体発光素子の製造方法
JP5974808B2 (ja) * 2012-10-17 2016-08-23 日亜化学工業株式会社 半導体発光素子
JP2014170815A (ja) * 2013-03-01 2014-09-18 Ushio Inc Ｌｅｄ素子
WO2015011586A1 (en) * 2013-07-26 2015-01-29 Koninklijke Philips N.V. Led dome with inner high index pillar
CN103554060A (zh) * 2013-09-13 2014-02-05 华中科技大学 甘油和碳酸二甲酯一步法合成缩水甘油的催化剂
US9577045B2 (en) 2014-08-04 2017-02-21 Fairchild Semiconductor Corporation Silicon carbide power bipolar devices with deep acceptor doping
DE102016122810A1 (de) * 2016-11-25 2018-05-30 Osram Opto Semiconductors Gmbh Bauteil mit einem lichtemittierenden halbleiterchip
KR20220097402A (ko) * 2019-11-08 2022-07-07 이데미쓰 고산 가부시키가이샤 적층체 및 반도체 장치
JP7326452B2 (ja) * 2020-03-06 2023-08-15 天津三安光電有限公司 フリップチップ発光ダイオード
CN115411131A (zh) * 2022-09-21 2022-11-29 五邑大学 一种紫外光电探测器及其制备方法与应用

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JP2770717B2 (ja) * 1993-09-21 1998-07-02 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
EP0952617B1 (en) 1993-04-28 2004-07-28 Nichia Corporation Gallium nitride-based III-V group compound semiconductor device
JP3219969B2 (ja) * 1995-05-29 2001-10-15 沖電気工業株式会社 発光ダイオードの製造方法
US6777805B2 (en) 2000-03-31 2004-08-17 Toyoda Gosei Co., Ltd. Group-III nitride compound semiconductor device
JP4810746B2 (ja) * 2000-03-31 2011-11-09 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP2001339101A (ja) 2000-05-26 2001-12-07 Sharp Corp 窒化ガリウム系化合物半導体素子
JP5143977B2 (ja) 2000-11-09 2013-02-13 星和電機株式会社 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2002164570A (ja) 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP2003006907A (ja) 2001-06-27 2003-01-10 Asahi Glass Co Ltd 光ヘッド装置
JP2003023178A (ja) * 2001-07-06 2003-01-24 Shiro Sakai 窒化ガリウム系発光素子
JP4507532B2 (ja) * 2002-08-27 2010-07-21 日亜化学工業株式会社 窒化物半導体素子
JP4036073B2 (ja) * 2002-10-21 2008-01-23 住友金属工業株式会社 薄膜付き石英基板
JP4620340B2 (ja) * 2002-10-23 2011-01-26 信越半導体株式会社 発光素子及びその製造方法
JP4244653B2 (ja) 2003-02-17 2009-03-25 日亜化学工業株式会社 シリコンナイトライド系蛍光体及びそれを用いた発光装置
US7582905B2 (en) * 2004-09-08 2009-09-01 Rohm Co., Ltd. Semiconductor light emitting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201518A (zh) * 2010-03-22 2011-09-28 Lg伊诺特有限公司 发光器件、电极结构、发光器件封装以及照明系统
US8723203B2 (en) 2010-03-22 2014-05-13 Lg Innotek Co., Ltd. Light emitting device, electrode structure, light emitting device package, and lighting system
CN102201518B (zh) * 2010-03-22 2015-04-22 Lg伊诺特有限公司 发光器件、电极结构、发光器件封装以及照明系统
US9496460B2 (en) 2010-03-22 2016-11-15 Lg Innotek Co., Ltd. Light emitting device, electrode structure, light emitting device package, and lighting system
US9882092B2 (en) 2010-03-22 2018-01-30 Lg Innotek Co., Ltd. Light emitting device, electrode structure, light emitting device package, and lighting system

Also Published As

Publication number Publication date
WO2006028118A1 (ja) 2006-03-16
US7582905B2 (en) 2009-09-01
JPWO2006028118A1 (ja) 2008-05-08
US20080073659A1 (en) 2008-03-27

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