JP2005123501A5 - - Google Patents

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Publication number
JP2005123501A5
JP2005123501A5 JP2003358993A JP2003358993A JP2005123501A5 JP 2005123501 A5 JP2005123501 A5 JP 2005123501A5 JP 2003358993 A JP2003358993 A JP 2003358993A JP 2003358993 A JP2003358993 A JP 2003358993A JP 2005123501 A5 JP2005123501 A5 JP 2005123501A5
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JP
Japan
Prior art keywords
based semiconductor
gan
type gan
emitting device
layer
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Application number
JP2003358993A
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English (en)
Japanese (ja)
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JP2005123501A (ja
JP4259268B2 (ja
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Priority to JP2003358993A priority Critical patent/JP4259268B2/ja
Priority claimed from JP2003358993A external-priority patent/JP4259268B2/ja
Publication of JP2005123501A publication Critical patent/JP2005123501A/ja
Publication of JP2005123501A5 publication Critical patent/JP2005123501A5/ja
Application granted granted Critical
Publication of JP4259268B2 publication Critical patent/JP4259268B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003358993A 2003-10-20 2003-10-20 半導体発光素子 Expired - Fee Related JP4259268B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003358993A JP4259268B2 (ja) 2003-10-20 2003-10-20 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003358993A JP4259268B2 (ja) 2003-10-20 2003-10-20 半導体発光素子

Publications (3)

Publication Number Publication Date
JP2005123501A JP2005123501A (ja) 2005-05-12
JP2005123501A5 true JP2005123501A5 (zh) 2007-08-16
JP4259268B2 JP4259268B2 (ja) 2009-04-30

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ID=34615359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003358993A Expired - Fee Related JP4259268B2 (ja) 2003-10-20 2003-10-20 半導体発光素子

Country Status (1)

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JP (1) JP4259268B2 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103712A (ja) * 2005-10-05 2007-04-19 Arima Optoelectronics Corp 高輝度のＧａＮ系発光ダイオ−ド
JP5265090B2 (ja) 2006-04-14 2013-08-14 豊田合成株式会社 半導体発光素子およびランプ
KR100886819B1 (ko) * 2006-08-23 2009-03-04 한국광기술원 반사막 전극, 이를 구비하는 화합물 반도체 발광소자 및그의 제조방법
KR100853851B1 (ko) 2006-10-30 2008-08-22 삼성전기주식회사 질화물 반도체 발광소자
JP5201566B2 (ja) 2006-12-11 2013-06-05 豊田合成株式会社 化合物半導体発光素子及びその製造方法
JP5318353B2 (ja) * 2007-02-14 2013-10-16 三菱化学株式会社 ＧａＮ系ＬＥＤ素子および発光装置
JPWO2009072365A1 (ja) * 2007-12-07 2011-04-21 出光興産株式会社 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜
JP2009260237A (ja) 2008-01-24 2009-11-05 Showa Denko Kk 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置
DE102008035110A1 (de) * 2008-07-28 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
JP2011187616A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子およびその製造方法
JP5988568B2 (ja) * 2011-11-14 2016-09-07 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP2014011333A (ja) * 2012-06-29 2014-01-20 Daiichi Jitsugyo Kk 光半導体素子およびその製造方法
JP2014045108A (ja) 2012-08-28 2014-03-13 Toyoda Gosei Co Ltd 半導体発光素子
JP6067401B2 (ja) * 2013-02-13 2017-01-25 学校法人 名城大学 半導体発光素子、及び、その製造方法
CN107768496B (zh) * 2017-09-28 2019-10-22 厦门乾照光电股份有限公司 一种led倒装芯片、制备方法及led晶片
JP7136020B2 (ja) * 2019-06-28 2022-09-13 セイコーエプソン株式会社 発光装置およびプロジェクター

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009095B2 (ja) * 1995-10-27 2000-02-14 日亜化学工業株式会社 窒化物半導体発光素子
JPH10256602A (ja) * 1997-03-12 1998-09-25 Sharp Corp 半導体発光素子
JPH11204887A (ja) * 1998-01-19 1999-07-30 Toshiba Corp 低抵抗電極を有する半導体装置
JP2000216431A (ja) * 1998-11-19 2000-08-04 Sanyo Electric Co Ltd 発光素子
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
JP5231701B2 (ja) * 2000-02-15 2013-07-10 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 放射線を発する半導体デバイス及びその製造方法
JP2002190621A (ja) * 2000-10-12 2002-07-05 Sharp Corp 半導体発光素子およびその製造方法
JP2002175030A (ja) * 2000-12-08 2002-06-21 Canon Inc 表示装置とその製造方法
JP2002313749A (ja) * 2001-04-10 2002-10-25 Showa Denko Kk 発光素子用ｎ型電極及びその製造方法並びにそれを用いたＩＩＩ族窒化物半導体発光素子
JP2002353506A (ja) * 2001-05-23 2002-12-06 Sharp Corp 半導体発光素子およびその製造方法
JP3711055B2 (ja) * 2001-09-25 2005-10-26 三洋電機株式会社 窒化物系半導体素子の形成方法
JP2003101071A (ja) * 2001-09-25 2003-04-04 Hitachi Cable Ltd 半導体発光素子
JP2003133589A (ja) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光ダイオード

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