JP2005123501A5 - - Google Patents

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Publication number
JP2005123501A5
JP2005123501A5 JP2003358993A JP2003358993A JP2005123501A5 JP 2005123501 A5 JP2005123501 A5 JP 2005123501A5 JP 2003358993 A JP2003358993 A JP 2003358993A JP 2003358993 A JP2003358993 A JP 2003358993A JP 2005123501 A5 JP2005123501 A5 JP 2005123501A5
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based semiconductor
gan
type gan
emitting device
layer
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JP2003358993A
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JP4259268B2 (en
JP2005123501A (en
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Priority claimed from JP2003358993A external-priority patent/JP4259268B2/en
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Publication of JP2005123501A5 publication Critical patent/JP2005123501A5/ja
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Publication of JP4259268B2 publication Critical patent/JP4259268B2/en
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Claims (4)

ｎ型ＧａＮ系半導体層とｐ型ＧａＮ系半導体層を備えたＧａＮ系半導体発光素子において、
前記ｐ型ＧａＮ系半導体層上に形成された透光性電極を備え、
前記透光性電極は、前記ｐ型ＧａＮ系半導体層上に部分的に配置された接着性金属層を介して前記ｐ型ＧａＮ系半導体層と密着した構成を有し、前記ｐ型ＧａＮ系半導体層に達する光出射用の複数の貫通孔を有することを特徴とするＧａＮ系半導体発光素子。 In a GaN-based semiconductor light-emitting device including an n-type GaN-based semiconductor layer and a p-type GaN-based semiconductor layer,
A translucent electrode formed on the p-type GaN-based semiconductor layer;
The translucent electrode has a configuration in close contact with the p-type GaN-based semiconductor layer through an adhesive metal layer partially disposed on the p-type GaN-based semiconductor layer, and the p-type GaN-based semiconductor A GaN-based semiconductor light-emitting element having a plurality of through holes for light emission reaching a layer. 前記透光性電極は、ＩＴＯ、ＩＺＯ、或いはＡＺＯによって形成されることを特徴とする請求項１記載のＧａＮ系半導体発光素子。 The translucent electrode, ITO, IZO, or GaN-based semiconductor light-emitting device according to claim 1, characterized in that it is formed by AZO. 前記接着性金属層は、前記透光性電極上に形成されるパッド電極の直下、及び前記透光性電極の周辺部に形成されることを特徴とする請求項１記載のＧａＮ系半導体発光素子。 The adhesive metal layer, the right under the pad electrode formed on the transparent electrode, and the GaN-based semiconductor light-emitting device according to claim 1, characterized in that it is formed in the peripheral portion of the translucent electrode . 前記接着性金属層は、ロジウムによって形成されることを特徴とする請求項１または３記載のＧａＮ系半導体発光素子。 The adhesive metal layer, GaN-based semiconductor light emitting device according to claim 1 or 3, wherein the formed by rhodium.
JP2003358993A 2003-10-20 2003-10-20 Semiconductor light emitting device Expired - Fee Related JP4259268B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003358993A JP4259268B2 (en) 2003-10-20 2003-10-20 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003358993A JP4259268B2 (en) 2003-10-20 2003-10-20 Semiconductor light emitting device

Publications (3)

Publication Number Publication Date
JP2005123501A JP2005123501A (en) 2005-05-12
JP2005123501A5 true JP2005123501A5 (en) 2007-08-16
JP4259268B2 JP4259268B2 (en) 2009-04-30

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Family Applications (1)

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JP2003358993A Expired - Fee Related JP4259268B2 (en) 2003-10-20 2003-10-20 Semiconductor light emitting device

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Families Citing this family (16)

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JP2007103712A (en) * 2005-10-05 2007-04-19 Arima Optoelectronics Corp High brightness garium nitride light emitting diode
JP5265090B2 (en) 2006-04-14 2013-08-14 豊田合成株式会社 Semiconductor light emitting device and lamp
KR100886819B1 (en) * 2006-08-23 2009-03-04 한국광기술원 Reflector Electrode, Compound Semiconductor Light Emitting Device Including The Reflector Electrode And Method Of Manufacturing The Same
KR100853851B1 (en) * 2006-10-30 2008-08-22 삼성전기주식회사 Nitride semiconductor light emitting device
JP5201566B2 (en) 2006-12-11 2013-06-05 豊田合成株式会社 Compound semiconductor light emitting device and manufacturing method thereof
JP5318353B2 (en) * 2007-02-14 2013-10-16 三菱化学株式会社 GaN-based LED element and light emitting device
WO2009072365A1 (en) * 2007-12-07 2009-06-11 Idemitsu Kosan Co., Ltd. Amorphous transparent conductive film for gallium nitride compound semiconductor light-emitting device
JP2009260237A (en) 2008-01-24 2009-11-05 Showa Denko Kk Compound semiconductor light-emitting element and its manufacturing method, conduction type translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus
DE102008035110A1 (en) * 2008-07-28 2010-02-11 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor chip
JP2011187616A (en) * 2010-03-08 2011-09-22 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
JP5988568B2 (en) * 2011-11-14 2016-09-07 Ｄｏｗａエレクトロニクス株式会社 Semiconductor light emitting device and manufacturing method thereof
JP2014011333A (en) * 2012-06-29 2014-01-20 Daiichi Jitsugyo Kk Optical semiconductor element and manufacturing method thereof
JP2014045108A (en) 2012-08-28 2014-03-13 Toyoda Gosei Co Ltd Semiconductor light-emitting element
JP6067401B2 (en) * 2013-02-13 2017-01-25 学校法人 名城大学 Semiconductor light emitting device and manufacturing method thereof
CN107768496B (en) * 2017-09-28 2019-10-22 厦门乾照光电股份有限公司 A kind of LED flip chip, preparation method and LED wafer
JP7136020B2 (en) * 2019-06-28 2022-09-13 セイコーエプソン株式会社 Light-emitting device and projector

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
JP3009095B2 (en) * 1995-10-27 2000-02-14 日亜化学工業株式会社 Nitride semiconductor light emitting device
JPH10256602A (en) * 1997-03-12 1998-09-25 Sharp Corp Semiconductor light emitting device
JPH11204887A (en) * 1998-01-19 1999-07-30 Toshiba Corp Semiconductor device having low resistance electrode
JP2000216431A (en) * 1998-11-19 2000-08-04 Sanyo Electric Co Ltd Light emitting element
US6287947B1 (en) * 1999-06-08 2001-09-11 Lumileds Lighting, U.S. Llc Method of forming transparent contacts to a p-type GaN layer
US7205578B2 (en) * 2000-02-15 2007-04-17 Osram Gmbh Semiconductor component which emits radiation, and method for producing the same
JP2002190621A (en) * 2000-10-12 2002-07-05 Sharp Corp Semiconductor light emitting element and manufacturing method of it
JP2002175030A (en) * 2000-12-08 2002-06-21 Canon Inc Display device and its manufacturing method
JP2002313749A (en) * 2001-04-10 2002-10-25 Showa Denko Kk LIGHT-EMITTING DEVICE n TYPE ELECTRODE, ITS MANUFACTURING METHOD AND III GROUP NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SAME
JP2002353506A (en) * 2001-05-23 2002-12-06 Sharp Corp Semiconductor light-emitting element and manufacturing method therefor
JP2003101071A (en) * 2001-09-25 2003-04-04 Hitachi Cable Ltd Semiconductor light-emitting device
JP3711055B2 (en) * 2001-09-25 2005-10-26 三洋電機株式会社 Method for forming nitride semiconductor device
JP2003133589A (en) * 2001-10-23 2003-05-09 Mitsubishi Cable Ind Ltd GaN BASED SEMICONDUCTOR LIGHT EMITTING DIODE

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