JP2007103712A - High brightness garium nitride light emitting diode - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high brightness GaN light emitting diode which raises the brightness-conductivity characteristic. <P>SOLUTION: The diode comprises a light-permeable insulation substrate 116, a first lower GaN binding layer 15 of a first conductivity type formed on the insulation substrate 116, an InGaN light emitting layer 13 formed on the binding layer 15, a second upper GaN binding layer 12 of a second conductivity type formed on the light emitting layer 13, a GaN contact layer 17A of a gallium-rich phase formed on the second upper binding layer 12, an AlGaInSnO photoconductive layer 11B formed on the contact layer 17A, a first electrode 14 formed in the exposed section of the first lower binding layer 15, and a second electrode 10 formed on the photoconductive layer 11B. The contact layer 17A forms a stable contact surface with the photoconductive layer 11B, and the contact surface reduces the ohmic contact electric resistance and raises the light emitting efficiency and the reliability. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a GaN-based light-emitting diode, and more particularly, a GaN-based light-emitting diode that enhances luminance and conductivity characteristics by employing a new AlGaInSnO transparent conductive oxide layer instead of the well-known Ni / Au layer. -Related to

The relatively high direct band gap energy among all the III-V materials is the III-V oxide material, but the carrier concentration of the p-type GaN semiconductor compound is 1 × 10 after the heat treatment. ^{It is 18} cm ⁻³ or less, and the most preferable electric resistance coefficient is around 1 Ωcm. Since the conductivity is not so preferable, it is impossible to efficiently distribute the current flowing from the electrode over the entire chip, and a phenomenon occurs in which the current stagnates. Therefore, the luminous efficiency is affected.

  At the end of 1993, Nichia Corporation in Japan officially announced that it had succeeded in producing a light-emitting diode by using a metal thin film for the first time as a p-electrode mainly composed of GaN. After that, Nichia Corporation announced a more preferred metal thin film composed of Au and Ni. Of these, Ni is formed directly on the p-type semiconductor layer, after which Au is formed on the Ni layer, and after heat treatment, is in ohmic contact with the photoconductive layer of the III-V group p-type GaN-based semiconductor compound. A Ni / Au alloy composite layer structure can be formed as the layer.

  A well-known technique shown in FIG. 1 is a structure posted by Patent Document 1 of Nichia Corporation. The GaN light emitting diode is composed of a sapphire substrate 116, an n-type Gan constrained layer 15, an n-type Ti / Al electrode 14, an InGaN light-emitting layer 13, a p-type GaN constrained layer 12, and a Ni / Au thin film 11A. And a p-type Ni / Au electrode 10.

  The Ni / Au thin film 11A has a thickness of only a few hundred Angstroms (Å), and efficiently distributes current throughout the chip as a current distribution layer. The transmittance of the Ni / Au thin film 11A is about 20% to 40%. Therefore, the light emitted from most of the light emitting layer is reduced in light emission efficiency as it is absorbed by the current distribution layer.

  Further, Indium Tin Oxide (ITO) used as a photoconductive layer instead of the Ni / Au thin film of the well-known technique is a sapphire substrate 116, an n-type Gan constraining layer 15, an n-type AlGaN as shown in FIG. A constraining layer 15A, an n-type electrode 14, an InGaN light emitting layer 13, a p-type GaN constraining layer 12, a high carrier concentration p-type contact layer 117, an ITO photoconductive layer 11C, and a p-type electrode 10 are provided.

Further, patent technology such as this type can be understood by referring to the structure of an InGaN light emitting diode manufactured by Epistar Co. Since the carrier concentration of GaN is usually 1 × 10 ¹⁸ cm ⁻³ or less, it is impossible to make good contact with metal or ITO. Therefore, Akimoto Kogyo Co., Ltd. controlled the carrier concentration of GaN to 5 × 10 ¹⁸ cm ⁻³ or more and the thickness to 500 mm or less. In addition, the GaN contact layer 117 is extremely thin on the surface and has a very high carrier concentration by methods such as zinc diffusion (Zn diffusion), magnesium diffusion (Mg diffusion), zinc ion implantation (Zn ion implantation), and magnesium ion implantation. The formation of the contact layer 117 and the formation of the ITO photoconductive layer 11C thereon by sputtering or electron gun evaporation can increase the luminous efficiency. Akimoto Photoelectric Co., Ltd. has been able to maintain the overall transmittance from 50% to 70% or more by this method. However, since the carrier injected into the ITO film layer is from tin oxide and donor oxide ions, moisture is easily scattered on the ITO film layer, destroying the intermediate surface of the ITO and GaN contact layer. , Increase ohmic contact electrical resistance. Therefore, the stability and reliability of the LED are lowered under high humidity conditions.
To summarize the above, in the prior art applied to the GaN-based light emitting device, no optical layer having good efficiency and reliability has been posted yet.

United States Patent No. 6,093,965

The main object of the present invention is a thin film which is amorphous or nanocrystalline, has good conductivity and is ten times higher than the ITO film layer mentioned above. A new Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system transparent conductive oxide layer (TCO) production method for a highly efficient GaN-based light emitting device is provided.

Another object of the present invention is to reduce the contact electrical resistance between the III-V group GaN based semiconductor light emitting device and the new Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ transparent conductive oxide layer. Thus, it is to provide a GaN-based contact layer in a gallium rich phase. This contact layer is any one of n-type, p-type, or one to which nothing is added.

  Another object of the present invention is made of a material composed of any one group such as AlGaInN, InGaN, InN, and the like, and is formed between the constraining layer and the contact layer. The band-gap energy is limited to be lower than that of the GaN constraining layer, and an intermediate layer is provided that reduces the electrical spiking effect between the constraining layer and the contact layer.

  In order to achieve the above object, a GaN light emitter diode according to the present invention includes a translucent insulating substrate, a first conductivity type GaN formed on the translucent insulating substrate as a first lower constraining layer, An InGaN light emitting layer formed on the lower constraining layer, a second conductivity type GaN formed on the light emitting layer as the second upper constraining layer, and formed on the second upper constraining layer and having a thickness of A GaN-based contact layer of a gallium-rich phase (Gallium rich phase) between 5 Angstroms (で) and 1000 Angstroms (Å), and a light transmitting layer formed on the contact layer, with a thickness of 5 Angstroms ( I) The AlGaInSnO system transparent conductive oxide layer (TCO) which is the above, a first electrode formed on the exposed area of the first conductivity type GaN, and a second electrode formed on the photoconductive layer. .

With the above-described configuration, it is possible to replace the translucent insulating base with a conductive base and to form the first electrode on the bottom edge of the conductive base.
With the above-described configuration, it is possible to form a transparent conductive oxidation window layer on the AlGaInSnO photoconductive layer.

According to the above technical means, a high-brightness GaN-based light emitting diode according to the present invention is produced, and the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer and p-type GaN constrained layer are produced. It is possible to produce an ohmic contact with the photoconductive layer and to further enhance the light emission and current dispersion effects by the contact layer formed in the photoconductive layer.
Further, the contact layer of the gallium-rich phase can form a stable contact surface (Interface) with the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer. Can reduce ohmic contact electrical resistance, increase luminous efficiency, and increase reliability.

First, samples of ITO, Ga _1.6 In _6.4 Sn ₂ O ₁₆ , Ga _2.8 In _5.2 Sn ₂ O ₁₆ and Al _0.1 Ga _2.7 In _5.2 Sn ₂ O ₁₆ transparent conductive oxide layers having the same thickness are prepared. The color of the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system sample varies from light blue green (containing a small amount of aluminum) to light green (containing a large amount of gallium), green (small amount of gallium) ). The color of the double-crystal ITO transparent conductive film is green that is deeper than the color of any one Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ family sample.

As shown in FIG. 9, when the wavelength λ is 400 nm or more, the transmittance of the Al _x Ga _{3 -xy} In _{5 + y} Sn _{2 -z} O _16-2z compound is slightly superior to the ITO transparent conductive film. Further, if the _{Al x Ga 3-xy In 5} + y Sn 2-z O 16-2z compound is seated in the ultraviolet region, the absorbent is relatively low. In this example, by increasing the content of gallium in the Al _x Ga _3-xy In _{5 + y} Sn _2-z O _16-2z compound or increasing the aluminum content in a minute amount, It is possible to obtain a relatively high transmittance.

The transmission characteristics of the transparent conductive oxide layer are determined by the band gap energy in the lower wavelength range. The relational expression is as follows.
λ _bg = hc / E _g
The upper wavelength is determined by the density of the charged particles. The relational expression is as follows.
λ _p = 2π [mc ² / 4π (N / V) e ² ] ^1/2

Further, the transmission characteristics of the transparent conductive oxide layer are determined by the defect density and phase relationship of the material. When the aluminum content in the Al _x Ga _{3 -xy} In _{5 + y} Sn _{2 -z} O _16-2z compound of this example is increased until x> 1, Al _x Ga _{3 -xy} In _{5 + y} Sn The translucency of the _2-z O _16-2z compound is greatly reduced.

From the results of this example, when the Al _x Ga _3-xy In _{5 + y} Sn _2-z O _16-2z compound is x> 1, the thin film electrical resistance increases and the charged particle content decreases. I understand. In addition, when the content of aluminum in the Al _x Ga _{3 -xy} In _{5 + y} Sn _{2 -z} O _16-2z compound is too high, the defect density increases. In addition, when the density of aluminum in the Al _x Ga _3-xy In _{5 + y} Sn _2-z O _16-2z compound is increased and x> 1 is exceeded, the monoclinic β-Gallia phase structure is destroyed. . A relatively preferable embodiment of the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system is represented by the following relational expression.
Al _x Ga _3-xy In _{5 + y} Sn _2-z O _16-2z
However, 0 ≦ x <2, 0 <y <3, 0 ≦ z <2

_{Moreover, Al x Ga 3-xy In} 5 + y Sn 2-z O 16-2z of this embodiment has a square structure phase. Of these, zinc (Sn) is not an alternating additive material in the ITO transparent conductive film, but is bonded as a structural unit, so the new Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system is ITO. Stability and reliability are relatively preferred over transparent conductive films.

Also, the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ photoconductive layer of this example is limited to be interconnected to the p-type GaN-based constraining layer, and is 200 ° C. or It undergoes annealing at higher temperatures. This causes an impact-type interruption and a poor electrical resistance contact between the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ and p-type GaN constraining layers. FIG. 10 shows the current and voltage characteristics of the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer in contact with the p-type GaN-based constraining layer of this example. It is a figure which shows the graph which shows.
Moreover, as a result of considering the electrical conductivity of the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer, this example limits the thickness to 5 mm or more.

In this example, a gallium-rich GaN-based contact layer is disposed between an Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system and a p-type GaN-based constrained layer at 200 ° C. Ani under temperatures above - to implement the ring, gallium GaN-based contact layer of rich gallium phase partially _{Al x Ga 3-xy in 5} + y Sn photoconductive layer of _2-z O 16-2z Al _x Ga _{3 -xy} In _{5 + y} Sn _{2 -z} O _{16 -2z} interface with a relatively high gallium content diffused into the surface and good electrical resistance contact with the GaN-based contact layer Form. The thickness of the GaN-based contact layer is 5 to 1000 mm. FIG. 11 shows the current in a GaN-based contact layer of a gallium-rich phase disposed between an Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system and a p-type GaN-based constrained layer. It is a figure which shows the graph which shows the characteristic of a voltage.

The gallium-rich GaN-based contact layer is more advanced and irregular in structure than the p-type GaN-based constrained layer, and the current passes through the p-type GaN-based constrained layer and the GaN-based contact layer. When the peak appears between the constraining layer and the contact layer, the thickness of the InN-based intermediate layer is 5 to 500 mm.
FIG. 7 shows an InN-based intermediate layer 17B disposed between the p-type constraining layer 12 and the GaN-based contact layer 17A. The InN-based intermediate layer 17B is made of a material composed of any one group such as AlGaInN, AlInN, InGaN, or InN, and is any one of p-type, n-type, or nothing added. is there.

  FIG. 12 shows a graph showing the current and voltage characteristics of the low band gap energy of the material of the InN-based intermediate layer 17B disposed between the p-type GaN-based constraining layer 12 and the GaN-based contact layer 17A. FIG. At this time, the function of reducing the electrical high peak effect occurs, and the current passes through the p-type GaN-based constraining layer and the GaN-based contact layer.

Shown in FIG. 3 is a translucent insulating substrate 116 of this example, for example, Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O on Al ₂ O ₃ , LiGaO ₂ , LiAlO ₂ and MgAl ₂ O ₄ substrates. FIG. 6 is a cross-sectional view of a light emitting device provided with a _3- SnO ₂ system photoconductive layer 11B and a gallium-rich GaN-based contact layer 17A.

The structure is such that the n-type GaN disposed on the translucent insulating substrate 116 as the first lower constraining layer 15, the InGaN light emitting layer 13 disposed on the first lower constraining layer 15, and the second upper constraining layer 12. The p-type GaN disposed on the InGaN light emitting layer 13, the gallium-rich phase GaN-based contact layer 17 A formed on the second upper constraining layer 12, and a part of the exposed region of the first lower constraining layer 15. The n-type electrode 14 to be formed and the p-type electrode 10 formed at the top end of the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer 11B are provided.

FIG. 4 shows an Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system on the first conductive type translucent conductive substrate 216 of this example, for example, SiC, GaN, AlN substrate. It is sectional drawing of the light-emitting device provided with the photoconductive layer 11B and the GaN-type contact layer 17A of the gallium rich phase. The difference between this embodiment and the embodiment shown in FIG. 3 resides in the n-type electrode 14 disposed below the translucent conductive substrate 216.

FIG. 5 shows a photoconductive layer 11B of Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system on a silicon or ZnSe substrate 316 of this example and a GaN-based contact in a gallium-rich phase. It is sectional drawing of the light-emitting device provided by the layer 17A.
FIG. 6 shows a light-absorbing conductive substrate 416 of this embodiment, for example, an Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ system photoconductive layer 11B on a GaAs or GaP substrate. It is sectional drawing of the light-emitting device provided with the GaN-type contact layer 17A of the gallium phase.

FIG. 7 shows the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ photoconductive layer 11B, gallium-rich GaN-based contact layer 17A, and InN-based intermediate layer 17B of the present embodiment. It is sectional drawing of the light-emitting device provided by.
FIG. 8 shows the Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ photoconductive layer 11B, gallium-rich GaN-based contact layer 17A, SnO ₂ , In _{2 O 3, ITO, Cd 2} SnO 4, ZnO, is a cross-sectional view of a light emitting device provided by _{CuAlO 2, CuCaO 2, SrCuO 2} , NiO or transparent conductive oxide window layer 11D and the like AgCoO _2. At this time, it is possible to improve efficiency and current diffusion by contacting the photoconductive electrode. Further, as a result of considering light efficiency and current diffusion of the transparent conductive oxide, the thickness needs to be 5 mm or more.

Summarizing the above, it is considered that the technical means posted by the present invention satisfy the requirements of the patent application claim that the novelty, the inventive step, the point applicable to the industry, etc. are all the same.
In addition, since the above-described drawings and description are only a relatively preferable example of the present invention, it is understood that a person who is familiar with this technology makes modifications or equivalent changes based on the spirit category of the present invention. Should belong to the claims.

It is sectional drawing of a known light-emitting device. It is sectional drawing of a known light-emitting device. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 1 is a cross-sectional view showing a light-emitting device of a high-intensity GaN-based light-emitting diode according to an embodiment of the present invention. 3 is a graph comparing transmission coefficients of high-luminance GaN-based light emitting diodes according to an embodiment of the present invention. It is a figure which shows the graph which shows the characteristic of the electric current and voltage of the photoconductive layer of the high-intensity GaN-type light emitting diode by one Example of this invention. It is a figure which shows the graph which shows the characteristic of the electric current and voltage of the GaN-type contact layer of the high-intensity GaN-type light emitting diode by one Example of this invention. It is a figure which shows the graph which shows the characteristic of the electric current and voltage of the low band gap energy of the material of the InN type | system | group intermediate layer of the high-intensity GaN-type light emitting diode by one Example of this invention.

Explanation of symbols

10 p-type electrode, 12 second upper bound layer, 13 light emitting layer, 14 n-type electrode, 11B Al ₂ O ₃ —Ga ₂ O ₃ —In ₂ O ₃ —SnO ₂ photoconductive layer, 11D transparent conductive oxidation window 15, first lower bound layer, 17A gallium-rich GaN-based contact layer, 116 translucent insulating substrate, 216 translucent conductive substrate, 316 silicon or ZnSe substrate, 416 light absorbing conductive substrate

Claims (18)

A translucent insulating substrate;
A first conductivity type GaN formed on the translucent insulating substrate as a first lower binding layer;
An InGaN light emitting layer formed on the first lower constraining layer;
A second conductivity type GaN formed on the light emitting layer as a second upper bound layer;
A gallium rich phase GaN-based contact layer formed on the second top constraining layer and having a thickness of between 5 and 1000 mm;
A transparent conductive oxide layer (TCO) of an AlGaInSnO system formed on the contact layer as a light transmitting layer and having a thickness of 5 mm or more;
A first electrode formed on the exposed area of the first conductivity type GaN;
A second electrode formed on the photoconductive layer;
A high-brightness GaN-based light-emitting diode comprising: The composition of the transparent conductive oxide layer (TCO) _{is, Al x Ga 3-xy In} 5 + y Sn 2-z O 16-2z ( where, 0 <x <2,0 <y <3,0 <z <2) The high-brightness GaN-based light-emitting diode according to claim 1, wherein _2. The high-luminance GaN according to claim 1, wherein the translucent insulating substrate is made of a material composed of any one group of Al ₂ O ₃ , LiGaO ₂ , LiAlO _2, and MgAl ₂ O _4. Light emitting diode.   2. The high-brightness GaN-based light emitting diode according to claim 1, wherein the GaN-based contact layer is made of a material composed of any one group of AlGaN, GaN, InGaN and the like. A first conductivity type substrate;
A first conductivity type GaN formed on the first conductivity type substrate as a first lower binding layer;
An InGaN light emitting layer formed on the first lower constraining layer;
A second conductivity type GaN formed on the light emitting layer as a second upper bound layer;
A gallium rich phase GaN-based contact layer formed on the second top constraining layer and having a thickness of between 5 and 1000 mm;
A transparent conductive oxide layer (TCO) of an AlGaInSnO system formed on the contact layer as a light transmitting layer and having a thickness of 5 mm or more;
A first electrode formed on the bottom surface of the first conductivity type substrate;
A second electrode formed on the photoconductive layer;
A high-brightness GaN-based light-emitting diode comprising: The composition of the transparent conductive oxide layer (TCO) _{is, Al x Ga 3-xy In} 5 + y Sn 2-z O 16-2z ( where, 0 <x <2,0 <y <3,0 <z <2) The high-brightness GaN-based light-emitting diode according to claim 5, wherein   6. The high-brightness GaN-based substrate according to claim 5, wherein the first conductivity type substrate is made of a material composed of any one group of SiC, Si, ZnSe, GaAs, GaP, GaN, AlN, and the like. Light emitting diode.   6. The high-brightness GaN-based light emitting diode according to claim 5, wherein the GaN-based contact layer is made of a material composed of any one group of AlGaN, GaN, InGaN and the like. A translucent insulating substrate;
A first conductivity type GaN formed on the translucent insulating substrate as a first lower binding layer;
An InGaN light emitting layer formed on the first lower constraining layer;
A second conductivity type GaN formed on the light emitting layer as a second upper bound layer;
An AlGnInN-based intermediate layer formed on the second upper constraining layer, which is limited so that the band-gap energy of the material is lower than that of the second conductivity type GaN and has a thickness of 5 to 500 mm. Intermediate layer)
A gallium rich phase GaN-based contact layer formed on the intermediate layer and having a thickness of between 5 and 1000 mm;
A transparent conductive oxide layer (TCO) of an AlGaInSnO system formed on the contact layer as a light transmitting layer and having a thickness of 5 mm or more;
A first electrode formed on the exposed area of the first conductivity type GaN;
A second electrode formed on the photoconductive layer;
A high-brightness GaN-based light-emitting diode comprising: The composition of the transparent conductive oxide layer (TCO) _{is, Al x Ga 3-xy In} 5 + y Sn 2-z O 16-2z ( where, 0 <x <2,0 <y <3,0 <z <2) The high-brightness GaN-based light-emitting diode according to claim 9, wherein 10. The high-brightness GaN according to claim 9, wherein the translucent insulating substrate is made of a material composed of any one group such as Al ₂ O ₃ , LiGaO ₂ , LiAlO ₂ and MgAl ₂ O _4. Light emitting diode.   10. The high-brightness GaN-based light emitting diode according to claim 9, wherein the GaN-based contact layer is made of a material composed of any one group of AlGaN, GaN, InGaN and the like.   The high-brightness GaN-based light-emitting diode according to claim 9, wherein the intermediate layer is made of a material composed of any one group of AlGaInN, InGaN, InN, and the like. A translucent insulating substrate;
A first conductivity type GaN formed on the translucent insulating substrate as a first lower binding layer;
An InGaN light emitting layer formed on the first lower constraining layer;
A second conductivity type GaN formed on the light emitting layer as a second upper bound layer;
A gallium rich phase GaN-based contact layer formed on the second top constraining layer and having a thickness of between 5 and 1000 mm;
A transparent conductive oxide layer (TCO) of an AlGaInSnO system formed on the contact layer as a light transmitting layer and having a thickness of 5 mm or more;
A transparent conductive window oxidation window layer formed on the photoconductive layer;
A first electrode formed on the exposed area of the first conductivity type GaN;
A second electrode formed on the transparent conductive oxidation window layer;
A high-brightness GaN-based light-emitting diode comprising: The composition of the transparent conductive oxide layer (TCO) _{is, Al x Ga 3-xy In} 5 + y Sn 2-z O 16-2z ( where, 0 <x <2,0 <y <3,0 <z <2) The high-brightness GaN-based light-emitting diode according to claim 14, wherein 15. The high-brightness GaN according to claim 14, wherein the translucent insulating substrate is made of a material composed of any one group such as Al ₂ O ₃ , LiGaO ₂ , LiAlO _2, and MgAl ₂ O _4. Light emitting diode.   15. The high-brightness GaN-based light emitting diode according to claim 14, wherein the GaN-based contact layer is made of a material composed of any one group of AlGaN, GaN, InGaN and the like. Transparent conductive oxide window layer is composed of _{SnO 2, In 2 O 3,} ITO, Cd 2 SnO 4, ZnO, consisting of _{CuAlO 2, CuCaO 2, SrCuO 2} , any one of a group, such as NiO and AgCoO ₂ material The high-brightness GaN-based light-emitting diode according to claim 14.

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