JP2002175030A - Display device and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a display device of small size and of high definition, utilizing injection type light emission, and further to provide a full-color display device of a small size and of high definition. SOLUTION: The display device is provided with a luminous layer 104, a first electrode group and a second electrode group, constituted of a plurality of first electrodes 110 and of a plurality of second electrodes 111 which hold the luminous layer 104 therebetween and are arranged in parallel, in directions crossing each other and a specified part of the luminous layer is selectively made to emit light. Further, display of full color is enabled by using the luminous layer of ultraviolet ray emission and a phosphor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a display device using injection light emission. More specifically, the present invention relates to a small-sized, high-definition display device using injection light emission, which can be driven by a simple matrix.

[0002]

2. Description of the Related Art A display device using injection type light emission, such as an LED (light emitting diode) display device, is a self-luminous type, does not require a backlight, and has high performance.
It is expected that a compact display device can be realized. In fact, a large-screen outdoor full-color LED display device or the like achieves high luminance and high contrast by arranging red, green, and blue light-emitting individual LEDs in a two-dimensional array.

[0003]

However, the conventional method of arraying individual injection type light emitting elements has a problem in realizing a small and high-definition display. This is because miniaturization and high definition of a display device are limited by the size of individual elements to be arrayed, the size of a wiring portion for driving them, and the like.

In order to solve this problem, for example, Japanese Patent Laid-Open No.
In Japanese Patent Application No. 0-12932, an LED array is formed directly on a semiconductor substrate on which an LED is formed, and pads serving as electrodes for driving the LED are stacked on the same surface as the LED, and the array portion is further driven. By attaching to the device, the display device is reduced in size and higher in definition.

However, even in the above method, the size and number of the electrode pads for driving the LED, the area of the LED display,
The degree of integration of pixels is limited, and there remains a problem in realizing a smaller and higher definition display device.

Further, the above-mentioned method is for realizing display by an array of single-wavelength LEDs, and has not yet been proposed for a small, full-color, high-definition display device.

An object of the present invention is to provide a small, high-definition display device using injection-type light emission, and to provide a small, full-color, high-definition display device using injection-type light emission. It is in.

[0008]

A first aspect of the present invention is a display having at least a light emitting layer formed by laminating a plurality of types of semiconductors, and a first electrode group and a second electrode group sandwiching the light emitting layer. A method for manufacturing a device, comprising: forming a semiconductor porous layer by making a portion including at least one surface of a semiconductor substrate porous; and forming a semiconductor single crystal layer on the semiconductor porous layer; Forming the light emitting layer on the semiconductor single crystal layer by an epitaxial growth method, and forming a plurality of first electrodes on the light emitting layer with a line width of 100 μm or less and an interval of 50 μm.
Forming a first electrode group by arranging them in parallel,
A step of forming a first insulating layer on the electrode group, a step of bonding the first insulating layer and the base, a step of separating the semiconductor substrate from the light emitting layer, and a step of separating the light emitting layer from the first electrode group. A plurality of second electrodes on the surface, a line width of 100 μm or less, and an interval of 50 μm
Forming a second electrode group in parallel with a direction intersecting with the first electrode group.

The above-mentioned light-emitting layer refers to an entire semiconductor layer generally used for a light-emitting diode or the like and formed by laminating a plurality of types of semiconductors that generate injection-type light emission by applying a voltage to both ends.

A second aspect of the present invention is a method of manufacturing a display device having at least a light emitting layer formed by laminating a plurality of types of semiconductors, and a first electrode group and a second electrode group sandwiching the light emitting layer. A step of forming a semiconductor porous layer by making a portion including at least one surface of the semiconductor substrate porous, a step of forming a semiconductor single crystal layer on the semiconductor porous layer, Forming the light emitting layer by an epitaxial growth method, forming a first electrode group on the light emitting layer by arranging a plurality of first electrodes in parallel with a line width of 100 μm or less and an interval of 50 μm or less; Forming a first insulating layer on the group, bonding the first insulating layer to the base, separating the semiconductor substrate from the light emitting layer, and a surface of the light emitting layer opposite to the first electrode group A plurality of second electrodes with a line width of 100 μm or less Forming a second electrode group in parallel with a direction intersecting with the first electrode group at an interval of 50 μm or less; and applying ultraviolet light to one of the outside of the first electrode group and the outside of the second electrode group. And forming a fluorescent layer that emits visible light upon receiving the light.

A third aspect of the present invention is a display device having at least a light emitting layer formed by laminating a plurality of kinds of semiconductors, and a first electrode group and a second electrode group sandwiching the light emitting layer. The light-emitting layer is formed by an epitaxial growth method. The first electrode group includes a plurality of first electrodes having a line width of 100 μm or less, and is arranged in parallel with an interval of 50 μm or less. The second electrode group includes a second electrode having a line width of 100 μm or less. A plurality of electrodes are arranged in parallel in a direction intersecting with the first electrode group at an interval of 50 μm or less.
A display device having a plurality of pixel portions defined by an intersection region of an electrode and a second electrode, and manufactured using the manufacturing method according to claim 1.

The above-mentioned intersection region is defined as an electrode in the first electrode and the second electrode such that the region where the electrode is formed overlaps when the region where the electrode is formed is projected perpendicularly to the other surface of the light emitting layer. Refers to the area.

According to the third aspect of the present invention, a first electrode group and a first electrode group are provided.
An insulating layer and the base are transparent to visible light; a first insulating layer and the base are transparent to visible light; Wherein the second electrode group is transparent to visible light, the second electrode has an opening in the pixel portion, and in at least one of the first electrode group and the second electrode group, It is preferable that the line width other than the portion is smaller than the line width of the pixel portion.

A fourth aspect of the present invention is a display device having at least a light emitting layer formed by laminating a plurality of types of semiconductors, and a first electrode group and a second electrode group sandwiching the light emitting layer. The light emitting layer is formed by an epitaxial growth method, and the first electrode group is formed by arranging a plurality of first electrodes having a line width of 100 μm or less in parallel on the light emitting layer at an interval of 50 μm or less, and the second electrode group is 100 μm or less in line width Are arranged in parallel in a direction intersecting with the first electrode group at an interval of 50 μm or less, and have a plurality of pixel portions defined by an intersection region between the first electrode and the second electrode. A fluorescent layer that receives ultraviolet light and emits visible light on one of the outside of the electrode group or the outside of the second electrode group, and is manufactured using the manufacturing method according to claim 2. Display device.

[0015] In the fourth aspect of the present invention, the light emitting layer may be formed of Si.
On the single crystal layer, an AlN buffer layer and an n-type Al _x Ga
_(1-x) N (0 <x <1) cladding layer, non-doped Al _y G
a _(1-y) N (0 ≦ y <1) active layer, p-type Al _z Ga _(1-z) N
(0 <z <1) that the cladding layer is formed by sequentially epitaxially growing the cladding layer as a preferred embodiment.

According to the fourth aspect of the present invention, when the fluorescent layer is formed outside the first electrode group, the first electrode group, the first insulating layer, and the base are arranged such that And that the first insulating layer and the substrate are transparent to ultraviolet light, and that the first electrode has an opening in the pixel portion.

According to a fourth aspect of the present invention, when the fluorescent layer is formed outside the second electrode group, the second electrode group is transparent to ultraviolet light, and the second electrode is Having an opening in a portion is included as a preferred embodiment.

Further, in the fourth aspect of the present invention, in at least one of the first electrode group and the second electrode group, the line width other than the pixel portion is smaller than the line width of the pixel portion. In a preferred embodiment, the phosphor layer selectively includes, on the pixel portion, a phosphor that emits visible light of a different color in response to ultraviolet light.

[0019]

DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to reduce the size and increase the definition of a display device using injection type light emission, it is effective to use a light emitting layer having high luminous efficiency manufactured by an epitaxial growth method. In the conventional method of sequentially depositing all layers from a semiconductor substrate, it is necessary to epitaxially grow various semiconductors on an electrode group, and it is very difficult to form a high-performance light emitting layer with good crystallinity. . Therefore, according to the manufacturing method of the present invention, which includes a step of forming a light emitting layer and an electrode group on a semiconductor substrate and then separating the semiconductor substrate, on both surfaces of a light emitting layer having good crystallinity manufactured by an epitaxial growth method, An electrode group having a line width and a line interval according to the present invention can be formed. In addition, by forming a semiconductor single crystal layer on a semiconductor porous layer and then forming a light emitting layer by an epitaxial growth method as in the characteristic process of the present invention, the lattice constant and thermal expansion of the semiconductor substrate differ from those of the semiconductor of the semiconductor substrate. Even if the light emitting layer is made of a semiconductor having a coefficient, epitaxial growth can be performed with good crystallinity, and a high-performance light emitting layer having high luminous efficiency can be manufactured.

As described above, if the manufacturing method of the present invention is used, electrodes can be formed on both surfaces of the light emitting layer having good crystallinity. Therefore, both the first electrode and the second electrode have a very fine width of, for example, about 10 μm and 5 μm. Even if the pixel portions are arranged at a pitch of, for example, about 15 μm, the first
Sufficient light emission is obtained from the light emitting region defined by the light emitting layer in the portion of the electrode and the second electrode sandwiched between the pixel portions, and this is the first time using the injection type light emission having the configuration as in the present invention. A small, high-definition display device can be realized.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.

FIG. 1 shows the main structure of the display device according to the present invention.
This will be described with reference to FIG. 1 and 2, 1
01 is a base, 102 is a first insulating layer, 104 is a light emitting layer.
Of an active layer. 109 is the second insulating layer, 110 is the first insulating layer.
The electrode 111 is a second electrode. FIG. 3 is a top view of the first electrode group, and FIG. 4 is a top view of the second electrode group.

The third main component of the present invention is the light emitting layer 10
4 and a first electrode group and a second electrode group sandwiching the light emitting layer 104. The first electrode group and the second electrode group each include a plurality of first electrodes 110 and a plurality of second electrodes 111. The main component of the fourth aspect of the present invention includes, in addition to the main component of the third aspect of the present invention, a fluorescent layer formed on one of the outside of the first electrode group and the outside of the second electrode group. (Not shown in FIGS. 1 to 4).

The light emitting layer 104 may have any light emitting layer structure as long as it is made of a material that can be stacked on the semiconductor single crystal layer by epitaxial growth. Terrorism, a quantum well, a multiple quantum well structure, etc. may be used.

As the structure of the visible light emitting layer, for example, the following structure of a light emitting layer used in a light emitting diode can be used. For red light emission, GaP-based, AlGaAs-based, Ga-based
GaP is used for green light emission of the AsP red light emitting diode.
nN system, GaP system, ZnSe system, ZnSSe system, ZnM
The nSSe-based green light emitting diode emits blue light with Ga
InN, GaN, SiC, CdZnSSe, A
This is the configuration of the light emitting layer of the 1GaInN-based blue light emitting diode.

As the ultraviolet light emitting layer, for example, AlGaN
, An AlGaInN-based, or a ZnO-based light-emitting layer can be used.

A plurality of first electrodes 110 are arranged in parallel in the first electrode group as shown in FIG. 3, and a plurality of second electrodes 111 are arranged in the second electrode group as shown in FIG. They are arranged in parallel in the direction crossing the group. It is preferable that the two electrode groups, which are arranged crossing each other, display images without distortion easily if they are orthogonal to each other. The two electrode groups have a line width of 100 μm or less and a line spacing of 5 to realize high definition.
0 μm or less, preferably a line width of 20 μm or less and a line interval of 10 μm or less. In order to function as a display device, the lower limit is about 10 μm in line width and about 5 μm in line interval.

With the above configuration, the first electrode group serves as a column drive electrode for sequentially or selectively emitting light from the light emitting region, and the second electrode group sequentially or selectively emits light from the light emitting region. It becomes a row drive electrode for
Simple matrix driving becomes possible.

In order to efficiently extract the generated light defined by the light emitted from the light emitting region, it is preferable to adopt the respective configurations in the following two cases.

When an observer observes the light emitting layer from the first electrode side, the first electrode 110, the first insulating layer 102, and the base 101 are transparent to the generated light, or The first insulating layer 102 and the base 101 are transparent to the generated light, and the first electrode 110 has an opening in the pixel portion. Further, the second electrode 111 has a property of reflecting the generated light.

When the observer observes the light emitting layer from the second electrode side, the second electrode 111 is transparent to the generated light, or the second electrode has an opening in the pixel portion. . Further, the first electrode 110 has a property of reflecting the generated light.

In order to obtain a clear display, it is preferable that the fluorescent layer necessary when the light emitting layer emits ultraviolet light is formed outside the electrode on the observer side.

In order to make the first electrode or the second electrode transparent to visible light or ultraviolet light, for example, a metal oxide such as ITO (indium tin oxide), ZnO, SnO ₂ , 200 metals such as Au, Ag, Cu
There is a method of patterning with a film thickness of about 以下 or less.

As a material for forming the first insulating layer transparent to visible light and ultraviolet light, SiO _x , SiN _x or the like can be used.

Glass, sapphire, and the like can be used as the material of the substrate transparent to visible light and ultraviolet light.

As a method for giving the first electrode group or the second electrode group a property of reflecting the light emitted from the light emitting layer,
For example, there is a method of forming a metal such as Au, Ag, and Cu with a thickness of about 200 ° or more.

As shown in FIGS. 3 and 4, at least one and preferably both of the first electrode and the second electrode are formed such that the line width other than the pixel portion is smaller than the line width of the pixel portion. In addition, the area of the electrodes other than the pixel portion can be reduced, and excess light emission from regions other than the light emitting region due to current flowing from the electrodes other than the pixel portion can be suppressed.

The fluorescent layer required in the fourth aspect of the present invention includes:
A phosphor emitting visible light of an appropriate color on the pixel portion,
Design and arrange the color scheme according to the application. For example, if phosphors emitting red, green, and blue visible light, which are the three primary colors of light, are arranged on three adjacent pixel portions, and these are periodically arranged, a full-color image display becomes possible. preferable.

Next, an embodiment of a method for manufacturing a display device according to the present invention will be specifically described with reference to FIG.

Step 5- (a) A portion including the surface of the semiconductor substrate 401 is made porous, and a semiconductor porous layer 402 is formed.

Step 5- (b) A semiconductor single crystal layer 403 of the same type as the substrate is formed on the surface of the semiconductor porous layer 402.

Step 5- (c) A plurality of compound semiconductors are epitaxially grown on the semiconductor single crystal layer 403 to form light emitting layers 404 to 406, and a contact layer suitable for the structure of the semiconductor used thereon is formed thereon. 407 is formed.

Further, a first electrode group is formed thereon.

Then, an insulating layer 409 serving as a first insulating layer is formed thereon.

Step 5- (d) The insulating layer 409 and the base 410 are joined.

Step 5- (e) The semiconductor substrate 401 is cut off by etching. The semiconductor porous layer 402 has a myriad of pores of several nanometers in size,
Since the surface area of the semiconductor is large, the etching speed is significantly increased. Therefore, the semiconductor substrate 401 can be easily separated by etching.

Step 5- (f) A second electrode group is formed.

An insulating layer 412 is formed thereon if necessary.

The above is one embodiment of the display device manufacturing method of the present invention.

Next, another embodiment of the method for manufacturing a display device of the present invention will be described in detail with reference to FIG.

Step 6- (a) A portion including the surface of the semiconductor substrate 501 is made porous, and a semiconductor porous layer 502 is formed.

Step 6- (b) A semiconductor single crystal layer 503 is formed on the surface of the semiconductor porous layer 502.

Step 6- (c) A buffer layer 504 and a buffer layer 504 are formed on the semiconductor single crystal layer 503.
A light emitting layer represented by 5 to 507 and a contact layer 5
08 are sequentially formed. Furthermore, the first electrode group 50
9 is formed. Then, an insulating layer 510 serving as a first insulating layer
Is formed thereon.

Step 6- (d) The insulating layer 510 and the base 511 are joined.

Step 6- (e) The semiconductor substrate 501 is cut off by etching.

Step 6- (f) The buffer layer 504 is removed by etching to form a second electrode group 512.

An insulating layer 513 is formed thereon if necessary.

Further, a phosphor that emits visible light in response to ultraviolet light is arranged thereon to form a phosphor layer 514.

The above is another embodiment of the display device manufacturing method of the present invention.

As the semiconductor substrate, a Si substrate or a GaAs substrate is used. A porous layer is formed on these substrates, and a thin single-crystal layer having a thickness of several nm is formed on the porous layer, thereby forming a substrate on which a light-emitting layer is grown. With the substrate having such a structure, the light-emitting layer can be grown without deterioration of the crystal due to lattice irregularity or difference in thermal expansion coefficient.

As a method for making the semiconductor substrate porous, there is, for example, anodization. Specifically, after the semiconductor substrate is ultrasonically cleaned with isopropyl alcohol, methyl alcohol, or the like, In or the like is deposited on the back surface according to the type of the semiconductor substrate, and electrical contact is established. Further, this substrate is subjected to HCl, H
Dip into an aqueous solution such as F and apply a current. The voltage applied at this time was gradually increased, and finally the current value was 5 to 7 mA /
An electric current is supplied for about 10 to 15 minutes by setting the current to about cm ² . Thus, a semiconductor porous layer having a porosity of about 20%
It can be formed only to a thickness of about 13 μm.

For forming a semiconductor single crystal layer on the semiconductor porous layer, for example, the following method is available.

One is Si having a porous semiconductor layer formed thereon.
Alternatively, a GaAs semiconductor substrate may be converted into Si, A, or B by using an MBE (Molecular Beam Epitaxy) apparatus according to the type of the semiconductor substrate.
The temperature of the substrate is gradually increased while irradiating a beam such as s.
Hold for a minute. This forms a semiconductor single crystal layer on the surface of the porous layer.

As another method, the Si substrate on which the porous layer is formed is oxidized at 400 ° C. for 1 hour in an oxygen atmosphere, and then oxidized at 1050 ° C. and 101.3 kPa in an H ₂ atmosphere.
Heat treatment for a minute.

As a method of forming the first electrode group, for example, an electrode material such as Au, Cu, or Al is deposited on the entire surface,
As shown in FIG. 3, the pitch of the pixel portion is set so that the line width other than the pixel portion is smaller than the line width of the pixel portion. For example, the pixel portion has a width of about 10 μm and the other portions have a width of about 5 μm. Is patterned in such a form as to be about 15 μm.

As a method of forming the second electrode group, for example, an electrode material such as Au, Cu, or Al is deposited on the entire surface,
As shown in FIG. 4, the line width other than the pixel portion is smaller than the line width of the pixel portion. For example, the pixel portion has a width of about 10 μm and has an opening of about 4 μm square, For example, patterning is performed in such a manner that the pixel portion has a pitch of about 15 μm so as to have a width of about 5 μm. In order to efficiently extract generated light, the opening is preferably provided in the center of the pixel portion. The larger the opening, the better, but at the same time, it is necessary to supply a sufficient current. The ratio of the dimensions is preferably about 1/3 to 2/3.

[0067]

(Embodiment 1) A first embodiment of the present invention will be described with reference to FIG.

First, a 2-inch GaAs substrate 401 having a thickness of 450 μm and having an n-type (100) orientation is sequentially treated with isopropyl alcohol and methyl alcohol.
After ultrasonic cleaning, In was attached to the back surface to make electrical contact. Further, the substrate was anodized with an aqueous HCl solution. At this time, the current value was measured while gradually increasing the applied voltage. GaAs porous layer 402 after anodizing for 10 minutes at a current of 5 mA / cm ²
Had a thickness of 10 μm and a porosity of 20%.

Next, the substrate was carried into an MBE apparatus, and while irradiating an arsenic beam with a solid source, the temperature of the substrate was gradually increased, finally raised to 600 ° C., and held for 20 minutes. At this time, when the RHEED (reflection high-speed electron beam diffraction) pattern was simultaneously observed, the pattern gradually changed from a halo pattern to a spot pattern and a streak pattern, and finally a 4 × 2 surface reconstruction was confirmed.

Next, the n-ZnMgSSe clad layer 40
4 is 0.5 μm, non-doped ZnCdSSe active layer 40
5 is 5 nm, the p-ZnMgSSe cladding layer 406 is 0.5 μm, and the p-ZnSe contact layer 407 is 0.1 μm.
μm. The growth temperature was 300 ° C. The n-type impurity was Cl, and the p-type impurity was N. N was added to the crystal by introducing active radicals generated by RF plasma discharge during epitaxial growth. Thus, a light emitting layer that emits light in the blue region was formed.

Next, gold was deposited on the entire surface to a thickness of about 500 nm, and was patterned so as to have a line width of 10 μm for pixels and a line width of 5 μm for other portions as shown in FIG.
The pixel pitch was 15 μm both vertically and horizontally. The patterned electric conductor becomes a column drive electrode.

An SiO _x insulating layer 409 was deposited thereon by the CVD method.

Next, the SiO _x insulating layer and the glass substrate 410
(Joining pressurized the whole substrate, and further 200 ° C
Heating was carried out as described above).

Next, GaAs was added with a sulfuric acid-based etchant.
The substrate was etched to remove the substrate. Since the semiconductor porous layer of the GaAs substrate is composed of holes and GaAs having a size of several nm, the surface area of GaAs in the semiconductor porous layer is large, and the etching speed is significantly increased. Therefore, the GaAs substrate and the light emitting layer are separated by the GaAs porous layer.

Next, about 500 nm of gold and indium were deposited on the n-ZnMgSSe clad layer 404 as a growth layer. Further, as shown in FIG. 4, the column drive electrode has a pattern perpendicular to the column drive electrode and
The opening was 4 μm square while having a width of μm, and the other portions were patterned with a width of 5 μm. The pitch was set to 15 μm, and the position of the pixel portion, that is, the portion having a width of 10 μm was formed so as to overlap with the column drive electrode. This becomes the row drive electrode.

Further, the SiO _x insulating layer 4 is formed by the CVD method.
12 were deposited.

Through the above steps, a display device emitting blue light using injection light emission was manufactured.

(Embodiment 2) FIG. 6 shows a second embodiment of the present invention.
This will be described with reference to FIG.

An n-type (11) having a thickness of 450 μm
1) A 2-inch Si substrate 501 having an orientation was ultrasonically cleaned with isopropyl alcohol and methyl alcohol sequentially, and then anodized with an aqueous solution of HF diluted with alcohol. At this time, the current was measured while gradually increasing the applied voltage. Apply a current of 7 mA / cm ²
The thickness of the porous Si layer 502 after anodizing for 10 minutes was 10 μm, and the porosity was 20%.

Next, the substrate is placed in an oxygen atmosphere at 400
Oxidation was performed at 1 ° C. for 1 hour. By this oxidation, the inner wall surface of the porous Si hole was covered with a thin oxide film. This was heat-treated at 1050 ° C. and 101.3 kPa for 10 minutes in an H ₂ atmosphere. By this heat treatment, the oxide film on the surface of the porous Si is removed, and the Si single crystal layer 503 having a thickness of 10 nm or less is further formed.
Was formed.

Next, this substrate was carried into the MBE apparatus, and the temperature of the substrate was gradually increased, finally raised to 900 ° C., and held for 20 minutes. Next, the substrate temperature is set to 75
The temperature is lowered to 0 ° C., and the AlN buffer layer 504 is
_{m, n-Al x Ga (} 1-x) N (0 <x <1) cladding layer 5
05 0.5 [mu] m, a non-doped _{Al y Ga (1-y)} N (0 ≦
y <1, y <x) The active layer 506 is, for example, 5 nm, p-Al _z
The Ga _(1-z) N (0 <z <1, y <z) cladding layer 507 was grown in order of, for example, 0.5 μm, and the p-GaN contact layer 508 was grown in order of, for example, 0.1 μm. The n-type impurity was Si and the p-type impurity was Mg. The N source introduced active radicals generated by the RF plasma discharge into the growth chamber. Thus, a light emitting layer emitting light in the ultraviolet region was formed.

Next, a gold electrode was deposited on the entire surface to a thickness of about 500 nm, and was patterned so as to have a width of 10 μm for a pixel and 5 μm for other portions as shown in FIG. The pixel pitch was 15 μm both vertically and horizontally. This is the column drive electrode section.

Further, an SiO _x insulating layer 510 was deposited by a CVD method.

Next, the SiO _x insulating layer 510 and the glass substrate 511 were joined. Bonding presses the whole substrate, and further 2
The heating was performed at a temperature of 00 ° C. or more.

Next, the Si is etched with a hydrofluoric acid-based etchant.
The substrate 501 was etched to remove the substrate. For the same reason as described in the first embodiment, the Si substrate and the light emitting layer
i Separated by the porous layer.

Next, the AlN buffer layer 50 as a growth layer
4 to form an n-AlGaN cladding layer 505
A gold electrode was deposited to a thickness of about 500 nm thereon. Further, as shown in FIG. 4, the pattern is orthogonal to the above-mentioned column drive electrodes, the pixel portion has a 10 μm width and an opening of 4 μm square, and the other portions have a 5 μm width.
Patterned with a width of m. The pitch was set to 15 μm, and the pixel portion, that is, the position of the portion having a width of 10 μm, was manufactured so as to overlap the column drive electrode. This becomes the row drive electrode.

Further, the SiO _x insulating layer 5 is formed by the CVD method.
13 were deposited.

Next, a layer containing a phosphor emitting red light by ultraviolet rays, a layer containing a phosphor emitting green light, and a layer containing a phosphor emitting blue light are sequentially deposited while sandwiching a flattening layer.
By patterning, a phosphor layer 514 was formed.

Through the above steps, a full-color display device using injection type light emission was manufactured.

[0090]

As described above, according to the present invention, since the size and pitch of the pixel can be determined by the electrode pattern, it is possible to obtain a small-sized and high-definition display device using injection light emission. . Further according to the invention,
By using an ultraviolet light emitting layer, a small, high-definition, full-color display device using injection light emission can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a typical configuration of the present invention.

FIG. 2 is a schematic sectional view of a representative configuration of the present invention.

FIG. 3 is a top view of a first electrode group.

FIG. 4 is a top view of a second electrode group.

FIG. 5 is a process chart of one embodiment of a method for manufacturing a display device of the present invention.

FIG. 6 is a process chart of another embodiment of the method of manufacturing the display device of the present invention.

[Explanation of symbols]

 Reference Signs List 101 Base 102 First insulating layer 104 Light emitting layer 105, 107 Cladding layer 106 Active layer 109 Second insulating layer 110 First electrode 111 Second electrode 401 Semiconductor substrate 402 Semiconductor porous layer 403 Semiconductor single crystal layer 404 Cladding layer 405 Active layer 406 Cladding layer 407 Contact layer 408 First electrode 409, 412 Insulating layer 410 Base 411 Second electrode 501 Semiconductor substrate 502 Semiconductor porous layer 503 Semiconductor single crystal layer 504 Buffer layer 505 Cladding layer 506 Active layer 507 Cladding layer 508 Contact layer 509 First electrode 510, 513 Insulating layer 511 Base 512 Second electrode 514 Fluorescent layer

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Seiichi Miyazawa 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 5C094 AA05 AA06 AA08 AA10 AA15 BA23 CA19 HA08 5F041 AA14 AA47 CA33 CA34 CA35 CA36 CA37 CA38 CA66 CA74 CA83 CA88 CB22 EE25 FF06 5G435 AA00 AA02 AA03 AA04 AA18 BB04 CC12 KK05 KK10

Claims (15)

[Claims] A light emitting layer formed by stacking a plurality of types of semiconductors; a first electrode group and a second electrode group sandwiching the light emitting layer;
A method for manufacturing a display device having at least a step of forming a semiconductor porous layer by making a portion including at least one surface of a semiconductor substrate porous, and forming a semiconductor single crystal layer on the semiconductor porous layer Forming the light emitting layer on the semiconductor single crystal layer by an epitaxial growth method; and forming a plurality of first electrodes on the light emitting layer with a line width of 100 mm.
μm or less, forming a first electrode group in parallel with an interval of 50 μm or less, forming a first insulating layer on the first electrode group, joining the first insulating layer and the base, Separating the light emitting layer from the semiconductor substrate;
A plurality of second electrodes having a line width of 100 on the surface opposite to the electrode group
forming a second electrode group in parallel with a direction intersecting the first electrode group at a distance of 50 μm or less and a distance of 50 μm or less. 2. The method according to claim 1, further comprising the step of forming a fluorescent layer that emits visible light by receiving ultraviolet light on one of the outside of the first electrode group and the outside of the second electrode group. 2. A method for manufacturing the display device according to item 1. 3. A light emitting layer formed by stacking a plurality of types of semiconductors; a first electrode group and a second electrode group sandwiching the light emitting layer;
Wherein the light emitting layer is formed by an epitaxial growth method, the first electrode group comprises a plurality of first electrodes having a line width of 100 μm or less, and a plurality of first electrodes arranged in parallel at an interval of 50 μm or less. Is composed of a plurality of second electrodes having a line width of 100 μm or less, arranged in parallel in a direction intersecting with the first electrode group at an interval of 50 μm or less, and a plurality of pixel portions defined by an intersection region between the first electrodes and the second electrodes. A display device, comprising: the display device having the manufacturing method according to claim 1. 4. The display device according to claim 3, wherein the first electrode group, the first insulating layer, and the base are transparent to visible light. 5. The display according to claim 3, wherein the first insulating layer and the base are transparent to visible light, and the first electrode has an opening in the pixel portion. apparatus. 6. The display device according to claim 3, wherein the second electrode group is transparent to visible light. 7. The display device according to claim 3, wherein the second electrode has an opening in the pixel portion. 8. A light emitting layer formed by stacking a plurality of types of semiconductors; a first electrode group and a second electrode group sandwiching the light emitting layer;
Wherein the light emitting layer is formed by an epitaxial growth method, and the first electrode group includes a plurality of first electrodes having a line width of 100 μm or less on the light emitting layer.
The second electrode group is a plurality of second electrodes having a line width of 100 μm or less, and the second electrode group is arranged in parallel in a direction intersecting with the first electrode group at an interval of 50 μm or less. It has a plurality of pixel portions defined by the intersection region of the second electrode, and has a fluorescent layer that emits visible light by receiving ultraviolet light on one of the outside of the first electrode group and the outside of the second electrode group. A display device manufactured using the manufacturing method according to claim 2. 9. The light-emitting layer according to claim 1, wherein the light-emitting layer comprises an Al single crystal layer
N buffer layer and n-type Al _x G n-type impurity of Si
_{a (1-x) N (} 0 <x <1) cladding layer, an undoped Al _y
A Ga _(1-y) N (0 ≦ y <1) active layer and a p-type Al _z Ga _(1-z) N (0 <z <1) cladding layer in which the p-type impurity is Mg are sequentially epitaxially grown and formed. The display device according to claim 8, wherein 10. The method according to claim 1, wherein the fluorescent layer is formed outside a first electrode group, and the first electrode group, the first insulating layer, and the base are transparent to ultraviolet light. The display device according to claim 8, wherein: 11. The fluorescent layer is formed outside a first electrode group, the first insulating layer and the base are transparent to ultraviolet light, and the first electrode is formed in the pixel portion. The display device according to claim 8, further comprising an opening. 12. The method according to claim 8, wherein the fluorescent layer is formed outside the second electrode group, and the second electrode group is transparent to ultraviolet light. The display device according to the above. 13. The pixel according to claim 8, wherein the fluorescent layer is formed outside a second electrode group, and the second electrode has an opening in the pixel portion. Display device. 14. The fluorescent layer according to claim 8, wherein a fluorescent material that emits visible light of a different color in response to ultraviolet light is selectively disposed on the pixel portion. The display device according to claim 1. 15. A pixel according to claim 3, wherein at least one of the first electrode group and the second electrode group has a line width other than the pixel portion smaller than a line width of the pixel portion. The display device according to claim 1.