JP4259268B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP4259268B2 JP4259268B2 JP2003358993A JP2003358993A JP4259268B2 JP 4259268 B2 JP4259268 B2 JP 4259268B2 JP 2003358993 A JP2003358993 A JP 2003358993A JP 2003358993 A JP2003358993 A JP 2003358993A JP 4259268 B2 JP4259268 B2 JP 4259268B2
- Authority
- JP
- Japan
- Prior art keywords
- gan
- based semiconductor
- layer
- electrode
- type gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003358993A JP4259268B2 (ja) | 2003-10-20 | 2003-10-20 | 半導体発光素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003358993A JP4259268B2 (ja) | 2003-10-20 | 2003-10-20 | 半導体発光素子 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005123501A JP2005123501A (ja) | 2005-05-12 |
JP2005123501A5 JP2005123501A5 (zh) | 2007-08-16 |
JP4259268B2 true JP4259268B2 (ja) | 2009-04-30 |
Family
ID=34615359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003358993A Expired - Fee Related JP4259268B2 (ja) | 2003-10-20 | 2003-10-20 | 半導体発光素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4259268B2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768496A (zh) * | 2017-09-28 | 2018-03-06 | 厦门乾照光电股份有限公司 | 一种led倒装芯片、制备方法及led晶片 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103712A (ja) * | 2005-10-05 | 2007-04-19 | Arima Optoelectronics Corp | 高輝度のGaN系発光ダイオ−ド |
JP5265090B2 (ja) | 2006-04-14 | 2013-08-14 | 豊田合成株式会社 | 半導体発光素子およびランプ |
KR100886819B1 (ko) * | 2006-08-23 | 2009-03-04 | 한국광기술원 | 반사막 전극, 이를 구비하는 화합물 반도체 발광소자 및그의 제조방법 |
KR100853851B1 (ko) * | 2006-10-30 | 2008-08-22 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP5201566B2 (ja) | 2006-12-11 | 2013-06-05 | 豊田合成株式会社 | 化合物半導体発光素子及びその製造方法 |
JP5318353B2 (ja) * | 2007-02-14 | 2013-10-16 | 三菱化学株式会社 | GaN系LED素子および発光装置 |
WO2009072365A1 (ja) * | 2007-12-07 | 2009-06-11 | Idemitsu Kosan Co., Ltd. | 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜 |
JP2009260237A (ja) | 2008-01-24 | 2009-11-05 | Showa Denko Kk | 化合物半導体発光素子及びその製造方法、化合物半導体発光素子用導電型透光性電極、ランプ、電子機器並びに機械装置 |
DE102008035110A1 (de) | 2008-07-28 | 2010-02-11 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
JP2011187616A (ja) * | 2010-03-08 | 2011-09-22 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JP5988568B2 (ja) * | 2011-11-14 | 2016-09-07 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
JP2014011333A (ja) * | 2012-06-29 | 2014-01-20 | Daiichi Jitsugyo Kk | 光半導体素子およびその製造方法 |
JP2014045108A (ja) | 2012-08-28 | 2014-03-13 | Toyoda Gosei Co Ltd | 半導体発光素子 |
JP6067401B2 (ja) * | 2013-02-13 | 2017-01-25 | 学校法人 名城大学 | 半導体発光素子、及び、その製造方法 |
JP7136020B2 (ja) | 2019-06-28 | 2022-09-13 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3009095B2 (ja) * | 1995-10-27 | 2000-02-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JPH10256602A (ja) * | 1997-03-12 | 1998-09-25 | Sharp Corp | 半導体発光素子 |
JPH11204887A (ja) * | 1998-01-19 | 1999-07-30 | Toshiba Corp | 低抵抗電極を有する半導体装置 |
JP2000216431A (ja) * | 1998-11-19 | 2000-08-04 | Sanyo Electric Co Ltd | 発光素子 |
US6287947B1 (en) * | 1999-06-08 | 2001-09-11 | Lumileds Lighting, U.S. Llc | Method of forming transparent contacts to a p-type GaN layer |
AU2001239182A1 (en) * | 2000-02-15 | 2001-08-27 | Osram Opto Semiconductors Gmbh | Semiconductor component which emits radiation, and method for producing the same |
JP2002190621A (ja) * | 2000-10-12 | 2002-07-05 | Sharp Corp | 半導体発光素子およびその製造方法 |
JP2002175030A (ja) * | 2000-12-08 | 2002-06-21 | Canon Inc | 表示装置とその製造方法 |
JP2002313749A (ja) * | 2001-04-10 | 2002-10-25 | Showa Denko Kk | 発光素子用n型電極及びその製造方法並びにそれを用いたIII族窒化物半導体発光素子 |
JP2002353506A (ja) * | 2001-05-23 | 2002-12-06 | Sharp Corp | 半導体発光素子およびその製造方法 |
JP3711055B2 (ja) * | 2001-09-25 | 2005-10-26 | 三洋電機株式会社 | 窒化物系半導体素子の形成方法 |
JP2003101071A (ja) * | 2001-09-25 | 2003-04-04 | Hitachi Cable Ltd | 半導体発光素子 |
JP2003133589A (ja) * | 2001-10-23 | 2003-05-09 | Mitsubishi Cable Ind Ltd | GaN系半導体発光ダイオード |
-
2003
- 2003-10-20 JP JP2003358993A patent/JP4259268B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107768496A (zh) * | 2017-09-28 | 2018-03-06 | 厦门乾照光电股份有限公司 | 一种led倒装芯片、制备方法及led晶片 |
CN107768496B (zh) * | 2017-09-28 | 2019-10-22 | 厦门乾照光电股份有限公司 | 一种led倒装芯片、制备方法及led晶片 |
Also Published As
Publication number | Publication date |
---|---|
JP2005123501A (ja) | 2005-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4259268B2 (ja) | 半導体発光素子 | |
KR100895452B1 (ko) | 반도체 발광소자용 양전극 | |
JP5115425B2 (ja) | Iii族窒化物半導体発光素子 | |
JP4796577B2 (ja) | 反射性ボンディングパッドを有する発光デバイスおよび反射性ボンディングパッドを有する発光デバイスを作製する方法 | |
US7531841B2 (en) | Nitride-based semiconductor light emitting device | |
KR100708934B1 (ko) | 질화물계 반도체 발광소자 | |
US7868344B2 (en) | Nitride semiconductor light emitting device including electrodes of a multilayer structure | |
TWI555225B (zh) | 三族氮化物半導體發光裝置 | |
EP1540744B1 (en) | Light-emitting diode with silicon carbide substrate | |
US7791100B2 (en) | Vertical gallium nitride based light emitting diode with multiple electrode branches | |
JP2007287757A (ja) | 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 | |
US20070010035A1 (en) | Light emitting diode and manufacturing method thereof | |
JP2006066903A (ja) | 半導体発光素子用正極 | |
KR20090015514A (ko) | 반도체 발광소자 | |
TWI446598B (zh) | 半導體發光元件、燈、電子機器及機械裝置 | |
JP2004071655A (ja) | 発光素子 | |
JP2013026426A (ja) | Iii族窒化物半導体発光素子 | |
US8633469B2 (en) | Group III nitride semiconductor light-emitting device | |
KR101483230B1 (ko) | 질화물 반도체 발광 소자 | |
JP4341623B2 (ja) | 発光素子及びその製造方法 | |
KR101616905B1 (ko) | 반도체 발광 소자 | |
KR101115533B1 (ko) | 플립칩 구조의 발광 소자 및 이의 제조 방법 | |
KR101333332B1 (ko) | 발광 다이오드 및 그 제조 방법 | |
KR100813598B1 (ko) | 질화물계 반도체 발광다이오드 | |
CN109148661B (zh) | 半导体结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051227 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070702 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080918 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080924 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081110 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090120 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090202 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120220 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4259268 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120220 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130220 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140220 Year of fee payment: 5 |
|
LAPS | Cancellation because of no payment of annual fees |