WO2009072365A1 - 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜 - Google Patents

窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜 Download PDF

Info

Publication number
WO2009072365A1
WO2009072365A1 PCT/JP2008/069715 JP2008069715W WO2009072365A1 WO 2009072365 A1 WO2009072365 A1 WO 2009072365A1 JP 2008069715 W JP2008069715 W JP 2008069715W WO 2009072365 A1 WO2009072365 A1 WO 2009072365A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive film
transparent conductive
semiconductor light
compound semiconductor
gallium nitride
Prior art date
Application number
PCT/JP2008/069715
Other languages
English (en)
French (fr)
Inventor
Kazuyoshi Inoue
Koki Yano
Futoshi Utsuno
Shigekazu Tomai
Original Assignee
Idemitsu Kosan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd. filed Critical Idemitsu Kosan Co., Ltd.
Priority to JP2009544615A priority Critical patent/JPWO2009072365A1/ja
Publication of WO2009072365A1 publication Critical patent/WO2009072365A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　インジウム、亜鉛及びスズからなる群から選ばれる１以上の金属の酸化物と、ハフニウム、タンタル、タングステン、ビスマス及びランタノイド系元素からなる群から選ばれる１以上の元素を含む酸化物を含み、バンドギャップが３．０ｅＶ以上であり、波長４６０ｎｍにおける屈折率が２．１以上であり、仕事関数が５．５ｅＶ以上である窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜。
PCT/JP2008/069715 2007-12-07 2008-10-30 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜 WO2009072365A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009544615A JPWO2009072365A1 (ja) 2007-12-07 2008-10-30 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-316980 2007-12-07
JP2007316980 2007-12-07

Publications (1)

Publication Number Publication Date
WO2009072365A1 true WO2009072365A1 (ja) 2009-06-11

Family

ID=40717546

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069715 WO2009072365A1 (ja) 2007-12-07 2008-10-30 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜

Country Status (3)

Country Link
JP (1) JPWO2009072365A1 (ja)
TW (1) TWI412155B (ja)
WO (1) WO2009072365A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159801A (ja) * 2010-02-01 2011-08-18 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP2014045192A (ja) * 2012-08-24 2014-03-13 Lg Innotek Co Ltd 発光素子
JP2017076825A (ja) * 2010-11-05 2017-04-20 株式会社半導体エネルギー研究所 半導体装置
JP2019064858A (ja) * 2017-09-29 2019-04-25 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、非晶質酸化物半導体薄膜、および薄膜トランジスタ
JP2019064887A (ja) * 2017-10-04 2019-04-25 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、および薄膜トランジスタ
WO2020067235A1 (ja) * 2018-09-26 2020-04-02 出光興産株式会社 酸化物積層体及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113277482A (zh) * 2021-05-10 2021-08-20 中山大学 一种可调控超导电性和电荷密度波的新型过渡金属碲化物及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058911A (ja) * 1998-08-13 2000-02-25 Toshiba Corp 半導体発光装置
JP2001068730A (ja) * 1999-08-25 2001-03-16 Showa Denko Kk ＡｌＧａＩｎＰ発光ダイオード
JP2005150741A (ja) * 2003-11-14 2005-06-09 Samsung Electronics Co Ltd 窒化物系発光素子及びその製造方法
JP2005223326A (ja) * 2004-02-04 2005-08-18 Samsung Electro Mech Co Ltd 電極層、それを具備する発光素子及び電極層の製造方法
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP2007221146A (ja) * 2006-02-16 2007-08-30 Lg Electronics Inc 縦型発光素子及びその製造方法
JP2007294578A (ja) * 2006-04-24 2007-11-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002164570A (ja) * 2000-11-24 2002-06-07 Shiro Sakai 窒化ガリウム系化合物半導体装置
JP4259268B2 (ja) * 2003-10-20 2009-04-30 豊田合成株式会社 半導体発光素子
KR101511231B1 (ko) * 2004-09-13 2015-04-17 스미토모 긴조쿠 고잔 가부시키가이샤 투명도전막과 그 제조방법 및 투명도전성 기재, 발광디바이스

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000058911A (ja) * 1998-08-13 2000-02-25 Toshiba Corp 半導体発光装置
JP2001068730A (ja) * 1999-08-25 2001-03-16 Showa Denko Kk ＡｌＧａＩｎＰ発光ダイオード
JP2005150741A (ja) * 2003-11-14 2005-06-09 Samsung Electronics Co Ltd 窒化物系発光素子及びその製造方法
JP2005223326A (ja) * 2004-02-04 2005-08-18 Samsung Electro Mech Co Ltd 電極層、それを具備する発光素子及び電極層の製造方法
JP2007221146A (ja) * 2006-02-16 2007-08-30 Lg Electronics Inc 縦型発光素子及びその製造方法
JP2007220972A (ja) * 2006-02-17 2007-08-30 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP2007294578A (ja) * 2006-04-24 2007-11-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子の製造方法及び窒化ガリウム系化合物半導体発光素子、並びにランプ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011159801A (ja) * 2010-02-01 2011-08-18 Showa Denko Kk 半導体発光素子及びその製造方法、並びにランプ
JP2017076825A (ja) * 2010-11-05 2017-04-20 株式会社半導体エネルギー研究所 半導体装置
JP2019004172A (ja) * 2010-11-05 2019-01-10 株式会社半導体エネルギー研究所 半導体装置
JP2014045192A (ja) * 2012-08-24 2014-03-13 Lg Innotek Co Ltd 発光素子
JP2019064858A (ja) * 2017-09-29 2019-04-25 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、非晶質酸化物半導体薄膜、および薄膜トランジスタ
JP2019064887A (ja) * 2017-10-04 2019-04-25 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、および薄膜トランジスタ
WO2020067235A1 (ja) * 2018-09-26 2020-04-02 出光興産株式会社 酸化物積層体及びその製造方法
JPWO2020067235A1 (ja) * 2018-09-26 2021-10-14 出光興産株式会社 酸化物積層体及びその製造方法
JP7357883B2 (ja) 2018-09-26 2023-10-10 出光興産株式会社 酸化物積層体及びその製造方法

Also Published As

Publication number Publication date
TW200929623A (en) 2009-07-01
JPWO2009072365A1 (ja) 2011-04-21
TWI412155B (zh) 2013-10-11

Similar Documents

Publication Publication Date Title
WO2009072365A1 (ja) 窒化ガリウム系化合物半導体発光素子用非晶質透明導電膜
KR102547131B1 (ko) 이차원 반도체를 포함하는 박막 트랜지스터 및 이를 포함하는 표시장치
EP3614442A3 (en) Semiconductor device having oxide semiconductor layer and manufactoring method thereof
WO2008059185A3 (fr) Electrode pour dispositif electroluminescent organique, sa gravure acide, ainsi que dispositif electroluminescent organique l'incorporant
JP2011049549A5 (ja) 半導体装置、モジュール、及び電子機器
WO2006089128A3 (en) High reliability etched-facet photonic devices
JP2010062549A5 (ja) 半導体装置の作製方法、及び半導体装置
JP2011049550A5 (ja) 半導体装置
WO2006051994A3 (en) Light-emitting device
TW200802889A (en) Semiconductor device and manufacturing method thereof
TWI559510B (zh) 顯示裝置
MX2012002891A (es) Sustrato protector para un dispositivo que recolecta o emite radiacion.
WO2009041596A1 (ja) エレクトロルミネッセンス素子
WO2009013425A3 (fr) Substrat pour la croissance epitaxiale de nitrure de gallium
TW200713467A (en) Semiconductor device﹑CMOS device and P-type semiconductor device
WO2008093873A1 (ja) ＺｎＯ系半導体素子
WO2009117438A3 (en) Process to make metal oxide thin film transistor array with etch stopping layer
TW200733945A (en) Contact lens packages
TW200802830A (en) Solid state image pickup device, method for manufacturing the same, semiconductor device and method for manufacturing the same
WO2007027533A3 (en) Electron-transporting layer for white oled device
WO2008103581A3 (en) Contextural management of multiple device capabilities in a communication device
KR102654115B1 (ko) 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치
WO2010009716A3 (de) Strahlungsemittierende vorrichtung und verfahren zur herstellung einer strahlungsemittierenden vorrichtung
CN110024135B (zh) 半导体装置
WO2008096736A1 (ja) ベンゾトリアゾール化合物含有組成物及び該組成物を用いてなる発光素子

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08855908

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009544615

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08855908

Country of ref document: EP

Kind code of ref document: A1