TW200625316A - Non-volatile memory device, methods of fabricating and operating the same - Google Patents

Non-volatile memory device, methods of fabricating and operating the same

Info

Publication number
TW200625316A
TW200625316A TW094147555A TW94147555A TW200625316A TW 200625316 A TW200625316 A TW 200625316A TW 094147555 A TW094147555 A TW 094147555A TW 94147555 A TW94147555 A TW 94147555A TW 200625316 A TW200625316 A TW 200625316A
Authority
TW
Taiwan
Prior art keywords
gate electrode
memory device
volatile memory
insulation layer
gate
Prior art date
Application number
TW094147555A
Other languages
English (en)
Other versions
TWI313866B (en
Inventor
Hee-Seog Jeon
Seung-Beom Yoon
Jeong-Uk Han
Yong-Tae Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200625316A publication Critical patent/TW200625316A/zh
Application granted granted Critical
Publication of TWI313866B publication Critical patent/TWI313866B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
TW094147555A 2004-12-30 2005-12-30 Non-volatile memory device, mehtods of fabricating and operating the same TWI313866B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040116845A KR100614644B1 (ko) 2004-12-30 2004-12-30 비휘발성 기억소자, 그 제조방법 및 동작 방법

Publications (2)

Publication Number Publication Date
TW200625316A true TW200625316A (en) 2006-07-16
TWI313866B TWI313866B (en) 2009-08-21

Family

ID=36755606

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094147555A TWI313866B (en) 2004-12-30 2005-12-30 Non-volatile memory device, mehtods of fabricating and operating the same

Country Status (4)

Country Link
US (3) US7492002B2 (zh)
JP (1) JP2006191049A (zh)
KR (1) KR100614644B1 (zh)
TW (1) TWI313866B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI406226B (zh) * 2007-04-24 2013-08-21 Iucf Hyu 驅動顯示面板的方法
TWI837743B (zh) * 2021-07-26 2024-04-01 新加坡商新加坡優尼山帝斯電子私人有限公司 使用半導體元件的記憶裝置

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TWI263308B (en) * 2005-01-28 2006-10-01 Powerchip Semiconductor Corp Method of fabricating non-volatile memory
KR100823165B1 (ko) * 2006-11-29 2008-04-18 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
KR20100080243A (ko) * 2008-12-31 2010-07-08 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
KR101187641B1 (ko) * 2011-03-04 2012-10-08 에스케이하이닉스 주식회사 비휘발성 메모리 장치, 그 제조 방법, 및 그 동작 방법
US8711636B2 (en) * 2011-05-13 2014-04-29 Silicon Storage Technology, Inc. Method of operating a split gate flash memory cell with coupling gate
CN102956643A (zh) * 2011-08-24 2013-03-06 硅存储技术公司 制造非易失浮栅存储单元的方法和由此制造的存储单元
KR20130104540A (ko) * 2012-03-14 2013-09-25 에스케이하이닉스 주식회사 반도체 메모리 소자의 제조방법
US9343471B2 (en) * 2012-03-21 2016-05-17 Broadcom Corporation Embedded flash memory
WO2013147811A1 (en) 2012-03-29 2013-10-03 Intel Corporation Method and system to obtain state confidence data using multistrobe read of a non-volatile memory
US8878281B2 (en) * 2012-05-23 2014-11-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for non-volatile memory cells
US9876086B2 (en) * 2013-12-13 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. Non-volatile memory device with floating gate having a tip corner
US9917165B2 (en) * 2015-05-15 2018-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell structure for improving erase speed
CN107305892B (zh) * 2016-04-20 2020-10-02 硅存储技术公司 使用两个多晶硅沉积步骤来形成三栅极非易失性闪存单元对的方法
EP3459114B1 (en) * 2016-05-17 2022-01-26 Silicon Storage Technology, Inc. Array of three-gate flash memory cells with individual memory cell read, program and erase
CN108122920B (zh) * 2017-12-13 2019-03-26 武汉新芯集成电路制造有限公司 提高浮栅型闪存擦除效率的方法以及浮栅型闪存
US10964398B2 (en) * 2018-09-28 2021-03-30 Samsung Electronics Co., Ltd. Memory device and a storage system using the same
US10762966B2 (en) * 2018-10-30 2020-09-01 Globalfoundries Singapore Pte. Ltd. Memory arrays and methods of forming the same
JP7186684B2 (ja) 2019-09-17 2022-12-09 株式会社東芝 半導体装置
TWI693602B (zh) * 2019-11-13 2020-05-11 億而得微電子股份有限公司 低電流電子抹除式可複寫唯讀記憶體陣列的操作方法

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JPH084114B2 (ja) * 1986-06-20 1996-01-17 工業技術院長 半導体不揮発性ｒａｍ
JPS6329589A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 半導体集積回路装置
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JP2597719B2 (ja) * 1989-07-31 1997-04-09 株式会社東芝 不揮発性半導体記憶装置およびその動作方法
JP2602575B2 (ja) * 1990-07-06 1997-04-23 シャープ株式会社 不揮発性半導体記憶装置
JPH04364077A (ja) * 1991-06-11 1992-12-16 Toshiba Corp 不揮発性半導体記憶素子および不揮発性半導体記憶装置
US5910912A (en) * 1992-10-30 1999-06-08 International Business Machines Corporation Flash EEPROM with dual-sidewall gate
US5422504A (en) * 1994-05-02 1995-06-06 Motorola Inc. EEPROM memory device having a sidewall spacer floating gate electrode and process
US6876031B1 (en) * 1999-02-23 2005-04-05 Winbond Electronics Corporation Method and apparatus for split gate source side injection flash memory cell and array with dedicated erase gates
JP2001085544A (ja) * 1999-09-14 2001-03-30 Sanyo Electric Co Ltd スプリットゲート型メモリセル
KR100376864B1 (ko) * 2000-08-17 2003-03-19 주식회사 하이닉스반도체 반도체장치의 비휘발성 메모리소자 및 그 제조방법
KR100665834B1 (ko) 2000-12-06 2007-01-09 삼성전자주식회사 스플리트 게이트형 플래시 메모리 소자 제조방법
TW480676B (en) 2001-03-28 2002-03-21 Nanya Technology Corp Manufacturing method of flash memory cell
TW527652B (en) 2002-02-06 2003-04-11 Taiwan Semiconductor Mfg Manufacturing method of selection gate for the split gate flash memory cell and its structure
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US6525369B1 (en) * 2002-05-13 2003-02-25 Ching-Yuan Wu Self-aligned split-gate flash memory cell and its contactless flash memory arrays
US6635533B1 (en) 2003-03-27 2003-10-21 Powerchip Semiconductor Corp. Method of fabricating flash memory
US7315056B2 (en) * 2004-06-07 2008-01-01 Silicon Storage Technology, Inc. Semiconductor memory array of floating gate memory cells with program/erase and select gates
KR100598047B1 (ko) * 2004-09-30 2006-07-07 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI406226B (zh) * 2007-04-24 2013-08-21 Iucf Hyu 驅動顯示面板的方法
TWI837743B (zh) * 2021-07-26 2024-04-01 新加坡商新加坡優尼山帝斯電子私人有限公司 使用半導體元件的記憶裝置

Also Published As

Publication number Publication date
US8059473B2 (en) 2011-11-15
KR20060078146A (ko) 2006-07-05
US20060170028A1 (en) 2006-08-03
KR100614644B1 (ko) 2006-08-22
US20100289071A1 (en) 2010-11-18
US7492002B2 (en) 2009-02-17
JP2006191049A (ja) 2006-07-20
TWI313866B (en) 2009-08-21
US20090141562A1 (en) 2009-06-04
US7791951B2 (en) 2010-09-07

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