TW200802816A - Non-volatile memory and manufacturing method thereof - Google Patents
Non-volatile memory and manufacturing method thereofInfo
- Publication number
- TW200802816A TW200802816A TW95123084A TW95123084A TW200802816A TW 200802816 A TW200802816 A TW 200802816A TW 95123084 A TW95123084 A TW 95123084A TW 95123084 A TW95123084 A TW 95123084A TW 200802816 A TW200802816 A TW 200802816A
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- gate
- disposed
- volatile memory
- manufacturing
- Prior art date
Links
Abstract
A non-volatile memory is described. The non-volatile memory includes a memory cell disposed on a substrate. The memory cell includes a tunneling dielectric layer, a floating gate, a control gate, an inter-gate dielectric layer, two doping regions, an erase gate, a first dielectric layer and a second dielectric layer. The tunneling dielectric layer is disposed on the substrate. The floating gate is disposed on the tunneling dielectric layer. The control gate is disposed on the floating gate. The inter-gate dielectric layer is disposed between the floating gate and the control gate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95123084A TW200802816A (en) | 2006-06-27 | 2006-06-27 | Non-volatile memory and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95123084A TW200802816A (en) | 2006-06-27 | 2006-06-27 | Non-volatile memory and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200802816A true TW200802816A (en) | 2008-01-01 |
Family
ID=44765490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW95123084A TW200802816A (en) | 2006-06-27 | 2006-06-27 | Non-volatile memory and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200802816A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140187A (en) * | 2015-08-04 | 2015-12-09 | 武汉新芯集成电路制造有限公司 | Embedded flash memory structure and preparation method thereof |
| CN105161492A (en) * | 2015-08-04 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | Floating gate flash memory structure and preparation method thereof |
| CN106449389A (en) * | 2016-10-21 | 2017-02-22 | 武汉新芯集成电路制造有限公司 | Embedded flash memory structure and manufacturing method thereof |
| TWI584469B (en) * | 2015-01-22 | 2017-05-21 | 超捷公司 | High density split-gate memory cell |
| US10312248B2 (en) | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
| US11315635B2 (en) | 2020-09-30 | 2022-04-26 | Silicon Storage Technology, Inc. | Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same |
-
2006
- 2006-06-27 TW TW95123084A patent/TW200802816A/en unknown
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10312248B2 (en) | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
| US11380698B2 (en) | 2014-11-12 | 2022-07-05 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
| US11849577B2 (en) | 2014-11-12 | 2023-12-19 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
| TWI584469B (en) * | 2015-01-22 | 2017-05-21 | 超捷公司 | High density split-gate memory cell |
| US10658027B2 (en) | 2015-01-22 | 2020-05-19 | Silicon Storage Technology, Inc. | High density split-gate memory cell |
| CN105140187A (en) * | 2015-08-04 | 2015-12-09 | 武汉新芯集成电路制造有限公司 | Embedded flash memory structure and preparation method thereof |
| CN105161492A (en) * | 2015-08-04 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | Floating gate flash memory structure and preparation method thereof |
| CN106449389A (en) * | 2016-10-21 | 2017-02-22 | 武汉新芯集成电路制造有限公司 | Embedded flash memory structure and manufacturing method thereof |
| CN106449389B (en) * | 2016-10-21 | 2019-09-17 | 武汉新芯集成电路制造有限公司 | Embedded flash memory structure and preparation method thereof |
| US11315635B2 (en) | 2020-09-30 | 2022-04-26 | Silicon Storage Technology, Inc. | Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same |
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