TW200620633A - Stacked semiconductor memory device - Google Patents
Stacked semiconductor memory deviceInfo
- Publication number
- TW200620633A TW200620633A TW094121194A TW94121194A TW200620633A TW 200620633 A TW200620633 A TW 200620633A TW 094121194 A TW094121194 A TW 094121194A TW 94121194 A TW94121194 A TW 94121194A TW 200620633 A TW200620633 A TW 200620633A
- Authority
- TW
- Taiwan
- Prior art keywords
- memory cell
- stacked semiconductor
- memory device
- semiconductor memory
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004190317A JP4662740B2 (ja) | 2004-06-28 | 2004-06-28 | 積層型半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200620633A true TW200620633A (en) | 2006-06-16 |
TWI291226B TWI291226B (en) | 2007-12-11 |
Family
ID=35504701
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094121194A TWI291226B (en) | 2004-06-28 | 2005-06-24 | Stacked semiconductor memory device |
Country Status (4)
Country | Link |
---|---|
US (1) | US7221614B2 (zh) |
JP (1) | JP4662740B2 (zh) |
CN (1) | CN100543864C (zh) |
TW (1) | TWI291226B (zh) |
Families Citing this family (52)
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US10013371B2 (en) | 2005-06-24 | 2018-07-03 | Google Llc | Configurable memory circuit system and method |
US8060774B2 (en) | 2005-06-24 | 2011-11-15 | Google Inc. | Memory systems and memory modules |
US8130560B1 (en) | 2006-11-13 | 2012-03-06 | Google Inc. | Multi-rank partial width memory modules |
US8111566B1 (en) | 2007-11-16 | 2012-02-07 | Google, Inc. | Optimal channel design for memory devices for providing a high-speed memory interface |
US8386722B1 (en) | 2008-06-23 | 2013-02-26 | Google Inc. | Stacked DIMM memory interface |
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
US9507739B2 (en) | 2005-06-24 | 2016-11-29 | Google Inc. | Configurable memory circuit system and method |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
US8041881B2 (en) | 2006-07-31 | 2011-10-18 | Google Inc. | Memory device with emulated characteristics |
US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
US8081474B1 (en) | 2007-12-18 | 2011-12-20 | Google Inc. | Embossed heat spreader |
US7580312B2 (en) * | 2006-07-31 | 2009-08-25 | Metaram, Inc. | Power saving system and method for use with a plurality of memory circuits |
US8090897B2 (en) | 2006-07-31 | 2012-01-03 | Google Inc. | System and method for simulating an aspect of a memory circuit |
US8327104B2 (en) | 2006-07-31 | 2012-12-04 | Google Inc. | Adjusting the timing of signals associated with a memory system |
US20080082763A1 (en) | 2006-10-02 | 2008-04-03 | Metaram, Inc. | Apparatus and method for power management of memory circuits by a system or component thereof |
US8438328B2 (en) | 2008-02-21 | 2013-05-07 | Google Inc. | Emulation of abstracted DIMMs using abstracted DRAMs |
US8089795B2 (en) | 2006-02-09 | 2012-01-03 | Google Inc. | Memory module with memory stack and interface with enhanced capabilities |
US8796830B1 (en) | 2006-09-01 | 2014-08-05 | Google Inc. | Stackable low-profile lead frame package |
US7386656B2 (en) | 2006-07-31 | 2008-06-10 | Metaram, Inc. | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
US8055833B2 (en) | 2006-10-05 | 2011-11-08 | Google Inc. | System and method for increasing capacity, performance, and flexibility of flash storage |
US7392338B2 (en) | 2006-07-31 | 2008-06-24 | Metaram, Inc. | Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits |
US8077535B2 (en) | 2006-07-31 | 2011-12-13 | Google Inc. | Memory refresh apparatus and method |
US7827345B2 (en) * | 2005-08-04 | 2010-11-02 | Joel Henry Hinrichs | Serially interfaced random access memory |
CN101248363B (zh) * | 2005-08-23 | 2012-01-18 | 日本电气株式会社 | 半导体器件、半导体芯片、芯片间互连测试方法以及芯片间互连切换方法 |
GB2444663B (en) | 2005-09-02 | 2011-12-07 | Metaram Inc | Methods and apparatus of stacking drams |
JP2007200963A (ja) * | 2006-01-24 | 2007-08-09 | Hitachi Ltd | 半導体記憶装置 |
US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
KR100809689B1 (ko) | 2006-06-16 | 2008-03-06 | 삼성전자주식회사 | 기판 관통 전극을 내재한 인터페이스 칩을 실장하는 반도체장치 |
US7724589B2 (en) | 2006-07-31 | 2010-05-25 | Google Inc. | System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits |
JP4364226B2 (ja) * | 2006-09-21 | 2009-11-11 | 株式会社東芝 | 半導体集積回路 |
JP4245180B2 (ja) | 2006-10-30 | 2009-03-25 | エルピーダメモリ株式会社 | 積層メモリ |
US8233303B2 (en) | 2006-12-14 | 2012-07-31 | Rambus Inc. | Multi-die memory device |
WO2008079910A2 (en) | 2006-12-20 | 2008-07-03 | Rambus Inc. | Strobe acquisition and tracking |
US8209479B2 (en) | 2007-07-18 | 2012-06-26 | Google Inc. | Memory circuit system and method |
US8080874B1 (en) | 2007-09-14 | 2011-12-20 | Google Inc. | Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween |
KR101448150B1 (ko) | 2007-10-04 | 2014-10-08 | 삼성전자주식회사 | 메모리 칩이 적층된 멀티 칩 패키지 메모리, 메모리 칩의적층 방법 및 멀티 칩 패키지 메모리의 동작 제어 방법 |
KR101519061B1 (ko) | 2008-01-21 | 2015-05-11 | 삼성전자주식회사 | 하나의 고전압 레벨 쉬프터를 공유하는 로우 디코더를 갖는플래쉬 메모리 장치 |
KR101393311B1 (ko) * | 2008-03-19 | 2014-05-12 | 삼성전자주식회사 | 프로세스 변화량을 보상하는 멀티 칩 패키지 메모리 |
JP5632584B2 (ja) * | 2009-02-05 | 2014-11-26 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置 |
DE202010017690U1 (de) | 2009-06-09 | 2012-05-29 | Google, Inc. | Programmierung von Dimm-Abschlusswiderstandswerten |
US7982504B1 (en) | 2010-01-29 | 2011-07-19 | Hewlett Packard Development Company, L.P. | Interconnection architecture for multilayer circuits |
WO2011093863A1 (en) | 2010-01-29 | 2011-08-04 | Hewlett-Packard Development Company, L.P. | Three dimensional multilayer circuit |
TW201207852A (en) * | 2010-04-05 | 2012-02-16 | Mosaid Technologies Inc | Semiconductor memory device having a three-dimensional structure |
US8854865B2 (en) * | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
US9558791B2 (en) * | 2013-12-05 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company Limited | Three-dimensional static random access memory device structures |
JP7102119B2 (ja) | 2017-09-29 | 2022-07-19 | キヤノン株式会社 | 半導体装置および機器 |
US11004477B2 (en) * | 2018-07-31 | 2021-05-11 | Micron Technology, Inc. | Bank and channel structure of stacked semiconductor device |
CN115151972A (zh) * | 2020-02-28 | 2022-10-04 | 华为技术有限公司 | 一种存储器和电子设备 |
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US4398248A (en) * | 1980-10-20 | 1983-08-09 | Mcdonnell Douglas Corporation | Adaptive WSI/MNOS solid state memory system |
JPH02116084A (ja) * | 1988-10-25 | 1990-04-27 | Nec Corp | 半導体記憶装置 |
JPH04196263A (ja) | 1990-11-27 | 1992-07-16 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2605968B2 (ja) * | 1993-04-06 | 1997-04-30 | 日本電気株式会社 | 半導体集積回路およびその形成方法 |
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KR100278653B1 (ko) * | 1998-01-23 | 2001-02-01 | 윤종용 | 이중 데이터율 모드 반도체 메모리 장치 |
JP2001035152A (ja) | 1999-07-22 | 2001-02-09 | Hitachi Ltd | 半導体記憶装置 |
JP2002026283A (ja) | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | 多層構造のメモリ装置及びその製造方法 |
JP2002025250A (ja) * | 2000-07-03 | 2002-01-25 | Hitachi Ltd | 半導体記憶装置 |
US6487102B1 (en) * | 2000-09-18 | 2002-11-26 | Intel Corporation | Memory module having buffer for isolating stacked memory devices |
JP2002251884A (ja) * | 2001-02-21 | 2002-09-06 | Toshiba Corp | 半導体記憶装置及びそのシステム装置 |
JP3872320B2 (ja) * | 2001-08-22 | 2007-01-24 | 松下電器産業株式会社 | 半導体記憶装置およびその貼り合わせ方法 |
US6504742B1 (en) | 2001-10-31 | 2003-01-07 | Hewlett-Packard Company | 3-D memory device for large storage capacity |
JP2003204030A (ja) | 2002-01-07 | 2003-07-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2003338200A (ja) * | 2002-05-17 | 2003-11-28 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JP4499982B2 (ja) | 2002-09-11 | 2010-07-14 | 株式会社日立製作所 | メモリシステム |
JP4045506B2 (ja) * | 2004-01-21 | 2008-02-13 | セイコーエプソン株式会社 | 積層型半導体記憶装置 |
-
2004
- 2004-06-28 JP JP2004190317A patent/JP4662740B2/ja not_active Expired - Lifetime
-
2005
- 2005-06-14 US US11/151,220 patent/US7221614B2/en active Active
- 2005-06-24 TW TW094121194A patent/TWI291226B/zh not_active IP Right Cessation
- 2005-06-28 CN CNB2005100810298A patent/CN100543864C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7221614B2 (en) | 2007-05-22 |
JP4662740B2 (ja) | 2011-03-30 |
US20050285174A1 (en) | 2005-12-29 |
JP2006012337A (ja) | 2006-01-12 |
CN100543864C (zh) | 2009-09-23 |
TWI291226B (en) | 2007-12-11 |
CN1725366A (zh) | 2006-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |