TW200601345A - Sensing circuit for flash memory device operating at low power supply voltage - Google Patents

Sensing circuit for flash memory device operating at low power supply voltage

Info

Publication number
TW200601345A
TW200601345A TW094117620A TW94117620A TW200601345A TW 200601345 A TW200601345 A TW 200601345A TW 094117620 A TW094117620 A TW 094117620A TW 94117620 A TW94117620 A TW 94117620A TW 200601345 A TW200601345 A TW 200601345A
Authority
TW
Taiwan
Prior art keywords
bit line
cell array
memory device
flash memory
load element
Prior art date
Application number
TW094117620A
Other languages
English (en)
Other versions
TWI261260B (en
Inventor
Se-Eun O
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200601345A publication Critical patent/TW200601345A/zh
Application granted granted Critical
Publication of TWI261260B publication Critical patent/TWI261260B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
TW094117620A 2004-06-29 2005-05-30 Sensing circuit for flash memory device operating at low power supply voltage TWI261260B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040049743A KR100618840B1 (ko) 2004-06-29 2004-06-29 저 전원전압 플래쉬 메모리장치의 감지회로

Publications (2)

Publication Number Publication Date
TW200601345A true TW200601345A (en) 2006-01-01
TWI261260B TWI261260B (en) 2006-09-01

Family

ID=35505494

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094117620A TWI261260B (en) 2004-06-29 2005-05-30 Sensing circuit for flash memory device operating at low power supply voltage

Country Status (5)

Country Link
US (2) US7609555B2 (zh)
JP (1) JP4648111B2 (zh)
KR (1) KR100618840B1 (zh)
CN (1) CN100573721C (zh)
TW (1) TWI261260B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426524B (zh) * 2009-04-03 2014-02-11 Ememory Technology Inc 具有補償電路之感測放大器

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US9047047B2 (en) * 2010-10-01 2015-06-02 Z124 Allowing multiple orientations in dual screen view
KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
US7423476B2 (en) * 2006-09-25 2008-09-09 Micron Technology, Inc. Current mirror circuit having drain-source voltage clamp
US20120225693A1 (en) * 2010-10-01 2012-09-06 Sanjiv Sirpal Windows position control for phone applications
KR101224328B1 (ko) * 2010-12-24 2013-01-21 한양대학교 산학협력단 메모리의 감지 증폭회로
US8339886B2 (en) * 2011-02-14 2012-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Amplifier sensing
US8497710B2 (en) * 2011-05-16 2013-07-30 National Tsing Hua University Low-offset current-sense amplifier and operating method thereof
CN103208300B (zh) * 2012-01-11 2016-06-08 北京兆易创新科技股份有限公司 一种读灵敏放大器比较电路
KR20130090642A (ko) 2012-02-06 2013-08-14 삼성전자주식회사 불휘발성 반도체 메모리 장치의 센스앰프 회로
US9268899B2 (en) * 2013-03-14 2016-02-23 Silicon Storage Technology, Inc. Transistor design for use in advanced nanometer flash memory devices
CN104425011B (zh) * 2013-08-26 2018-05-01 北京兆易创新科技股份有限公司 一种闪存阵列的参考单元、闪存阵列
CN105741874B (zh) * 2014-12-08 2019-10-25 中芯国际集成电路制造(上海)有限公司 用于快闪存储器的双位线读出电路和读出方法
CN112863581A (zh) 2016-09-09 2021-05-28 硅存储技术公司 用于读取阵列中的闪存单元的带位线预充电电路的改进读出放大器
TWI708253B (zh) 2018-11-16 2020-10-21 力旺電子股份有限公司 非揮發性記憶體良率提升的設計暨測試方法

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KR100618840B1 (ko) * 2004-06-29 2006-09-01 삼성전자주식회사 저 전원전압 플래쉬 메모리장치의 감지회로
JP4772363B2 (ja) * 2005-04-12 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
JP2007042193A (ja) * 2005-08-02 2007-02-15 Toshiba Corp 不揮発性半導体記憶装置
KR100826500B1 (ko) * 2006-10-23 2008-05-02 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 데이터 복구 방법
US7724595B2 (en) * 2008-01-08 2010-05-25 Macronix International Co., Ltd. Current-mode sense amplifier and sense amplifying method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426524B (zh) * 2009-04-03 2014-02-11 Ememory Technology Inc 具有補償電路之感測放大器

Also Published As

Publication number Publication date
US7609555B2 (en) 2009-10-27
TWI261260B (en) 2006-09-01
US20050286305A1 (en) 2005-12-29
CN1725381A (zh) 2006-01-25
US20100008147A1 (en) 2010-01-14
CN100573721C (zh) 2009-12-23
JP4648111B2 (ja) 2011-03-09
KR20060000777A (ko) 2006-01-06
US7961521B2 (en) 2011-06-14
KR100618840B1 (ko) 2006-09-01
JP2006019003A (ja) 2006-01-19

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