TW200522165A - Thin film forming apparatus and method of cleaning the same - Google Patents
Thin film forming apparatus and method of cleaning the same Download PDFInfo
- Publication number
- TW200522165A TW200522165A TW093124557A TW93124557A TW200522165A TW 200522165 A TW200522165 A TW 200522165A TW 093124557 A TW093124557 A TW 093124557A TW 93124557 A TW93124557 A TW 93124557A TW 200522165 A TW200522165 A TW 200522165A
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- thin film
- cleaning
- reaction chamber
- reaction tube
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 50
- 239000010409 thin film Substances 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 178
- 239000007789 gas Substances 0.000 claims abstract description 159
- 238000010438 heat treatment Methods 0.000 claims abstract description 58
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 15
- 239000010408 film Substances 0.000 claims description 42
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- 238000005406 washing Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 230000004913 activation Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 43
- 235000012431 wafers Nutrition 0.000 description 40
- 239000004065 semiconductor Substances 0.000 description 26
- 229910052757 nitrogen Inorganic materials 0.000 description 22
- 238000010926 purge Methods 0.000 description 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 9
- 239000007795 chemical reaction product Substances 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 239000003085 diluting agent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- -1 for example Chemical compound 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical class Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002221 fluorine Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003305722A JP4272486B2 (ja) | 2003-08-29 | 2003-08-29 | 薄膜形成装置及び薄膜形成装置の洗浄方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200522165A true TW200522165A (en) | 2005-07-01 |
| TWI374480B TWI374480B (enExample) | 2012-10-11 |
Family
ID=34372421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093124557A TW200522165A (en) | 2003-08-29 | 2004-08-16 | Thin film forming apparatus and method of cleaning the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7520937B2 (enExample) |
| JP (1) | JP4272486B2 (enExample) |
| KR (1) | KR100893252B1 (enExample) |
| TW (1) | TW200522165A (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
| US7521705B2 (en) * | 2005-08-15 | 2009-04-21 | Micron Technology, Inc. | Reproducible resistance variable insulating memory devices having a shaped bottom electrode |
| US7494943B2 (en) * | 2005-10-20 | 2009-02-24 | Tokyo Electron Limited | Method for using film formation apparatus |
| US20070093069A1 (en) * | 2005-10-21 | 2007-04-26 | Chien-Hua Tsai | Purge process after dry etching |
| JP4786495B2 (ja) * | 2005-11-24 | 2011-10-05 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
| JP4245012B2 (ja) * | 2006-07-13 | 2009-03-25 | 東京エレクトロン株式会社 | 処理装置及びこのクリーニング方法 |
| US20080142046A1 (en) * | 2006-12-13 | 2008-06-19 | Andrew David Johnson | Thermal F2 etch process for cleaning CVD chambers |
| KR100864258B1 (ko) * | 2007-02-27 | 2008-10-17 | (주)지원테크 | 유리질 제품의 세정 방법 및 유리질 제품의 세정 장치 |
| JP2010239115A (ja) * | 2009-03-10 | 2010-10-21 | Hitachi Kokusai Electric Inc | 基板処理装置 |
| JP5346904B2 (ja) * | 2009-11-27 | 2013-11-20 | 東京エレクトロン株式会社 | 縦型成膜装置およびその使用方法 |
| CN102776488B (zh) * | 2011-05-10 | 2014-08-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 化学气相沉积反应腔装置及具有其的化学气相沉积设备 |
| JP6124724B2 (ja) * | 2013-07-25 | 2017-05-10 | 株式会社日立国際電気 | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム |
| JP6602699B2 (ja) * | 2016-03-14 | 2019-11-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム |
| CN113463068B (zh) * | 2021-05-31 | 2023-04-07 | 上海中欣晶圆半导体科技有限公司 | 半导体成膜apcvd机台工艺腔体干湿结合的保养方法 |
| US20240145230A1 (en) * | 2022-10-28 | 2024-05-02 | Applied Materials, Inc. | Semiconductor cleaning using plasma-free precursors |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
| JP2746448B2 (ja) | 1990-02-07 | 1998-05-06 | セントラル硝子株式会社 | 混合ガス組成物 |
| JP3227522B2 (ja) * | 1992-10-20 | 2001-11-12 | 株式会社日立製作所 | マイクロ波プラズマ処理方法及び装置 |
| US5264396A (en) * | 1993-01-14 | 1993-11-23 | Micron Semiconductor, Inc. | Method for enhancing nitridation and oxidation growth by introducing pulsed NF3 |
| US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
| JPH0786242A (ja) * | 1993-09-10 | 1995-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5439553A (en) * | 1994-03-30 | 1995-08-08 | Penn State Research Foundation | Controlled etching of oxides via gas phase reactions |
| US5770263A (en) * | 1995-11-08 | 1998-06-23 | Micron Technology, Inc. | Method for in situ removal of particulate residues resulting from hydrofluoric acid cleaning treatments |
| JP3400293B2 (ja) * | 1996-05-01 | 2003-04-28 | 株式会社東芝 | Ｃｖｄ装置及びそのクリーニング方法 |
| US5804259A (en) * | 1996-11-07 | 1998-09-08 | Applied Materials, Inc. | Method and apparatus for depositing a multilayered low dielectric constant film |
| US20050188923A1 (en) * | 1997-08-11 | 2005-09-01 | Cook Robert C. | Substrate carrier for parallel wafer processing reactor |
| DE19813757C2 (de) * | 1998-03-27 | 2000-12-14 | Siemens Ag | Verfahren zur Herstellung einer mit Fluor belgten Halbleiteroberfläche |
| US6383300B1 (en) | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
| US6905800B1 (en) * | 2000-11-21 | 2005-06-14 | Stephen Yuen | Etching a substrate in a process zone |
| JP2002164335A (ja) | 2000-11-27 | 2002-06-07 | Canon Sales Co Inc | 半導体製造装置の洗浄方法及び半導体製造装置 |
| KR20040065154A (ko) * | 2001-12-13 | 2004-07-21 | 쇼와 덴코 가부시키가이샤 | 반도체 제조장치용 클리닝가스 및 이 가스를 사용한클리닝방법 |
| US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
| US7361599B2 (en) * | 2002-09-03 | 2008-04-22 | Texas Instruments Incorporated | Integrated circuit and method |
| JP2004128281A (ja) * | 2002-10-03 | 2004-04-22 | Tokyo Electron Ltd | 基板処理方法および基板処理装置 |
| JP3872027B2 (ja) * | 2003-03-07 | 2007-01-24 | 株式会社東芝 | クリーニング方法及び半導体製造装置 |
| JP4430918B2 (ja) * | 2003-03-25 | 2010-03-10 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法及び薄膜形成方法 |
| JP3974547B2 (ja) * | 2003-03-31 | 2007-09-12 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US7479454B2 (en) * | 2003-09-30 | 2009-01-20 | Tokyo Electron Limited | Method and processing system for monitoring status of system components |
| US20050211264A1 (en) * | 2004-03-25 | 2005-09-29 | Tokyo Electron Limited Of Tbs Broadcast Center | Method and processing system for plasma-enhanced cleaning of system components |
| JP4675127B2 (ja) * | 2004-04-23 | 2011-04-20 | 東京エレクトロン株式会社 | 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム |
| US20060017043A1 (en) * | 2004-07-23 | 2006-01-26 | Dingjun Wu | Method for enhancing fluorine utilization |
| US7119032B2 (en) * | 2004-08-23 | 2006-10-10 | Air Products And Chemicals, Inc. | Method to protect internal components of semiconductor processing equipment using layered superlattice materials |
| JP2006114780A (ja) * | 2004-10-15 | 2006-04-27 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム |
-
2003
- 2003-08-29 JP JP2003305722A patent/JP4272486B2/ja not_active Expired - Fee Related
-
2004
- 2004-08-16 TW TW093124557A patent/TW200522165A/zh not_active IP Right Cessation
- 2004-08-26 US US10/927,415 patent/US7520937B2/en not_active Expired - Fee Related
- 2004-08-27 KR KR1020040067670A patent/KR100893252B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100893252B1 (ko) | 2009-04-17 |
| US20050066993A1 (en) | 2005-03-31 |
| US7520937B2 (en) | 2009-04-21 |
| JP2005079218A (ja) | 2005-03-24 |
| KR20050021338A (ko) | 2005-03-07 |
| JP4272486B2 (ja) | 2009-06-03 |
| TWI374480B (enExample) | 2012-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5044579B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| TWI415189B (zh) | 膜形成裝置及其使用方法 | |
| JP5008957B2 (ja) | シリコン窒化膜の形成方法、形成装置、形成装置の処理方法及びプログラム | |
| JP4918452B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| TW200522165A (en) | Thin film forming apparatus and method of cleaning the same | |
| JP2009544849A (ja) | 膜形成装置のクリーニング方法および膜形成装置 | |
| JP5700538B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 | |
| JP2006114780A (ja) | 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム | |
| TW202104636A (zh) | 成膜方法及成膜裝置 | |
| JP4675127B2 (ja) | 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム | |
| JP2008283148A (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 | |
| JP4786495B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| KR100901053B1 (ko) | 박막 형성 장치의 세정 방법, 박막 형성 장치 및 프로그램을 기록한 컴퓨터로 판독 가능한 기록 매체 | |
| JP5710033B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| JP5250141B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| JP2008031510A (ja) | 成膜装置のクリーニング方法および成膜装置 | |
| JP4312198B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム | |
| JP5661444B2 (ja) | 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム | |
| JP5465802B2 (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム | |
| JP2002080967A (ja) | コールドウォール形成膜処理装置のクリーニング方法 | |
| JP2012209411A (ja) | 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |