TWI374480B - - Google Patents

Download PDF

Info

Publication number
TWI374480B
TWI374480B TW093124557A TW93124557A TWI374480B TW I374480 B TWI374480 B TW I374480B TW 093124557 A TW093124557 A TW 093124557A TW 93124557 A TW93124557 A TW 93124557A TW I374480 B TWI374480 B TW I374480B
Authority
TW
Taiwan
Prior art keywords
gas
reaction chamber
reaction tube
cleaning
specific temperature
Prior art date
Application number
TW093124557A
Other languages
English (en)
Chinese (zh)
Other versions
TW200522165A (en
Inventor
Kazuhide Hasebe
Mitsuhiro Okada
Hiromichi Kotsugai
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200522165A publication Critical patent/TW200522165A/zh
Application granted granted Critical
Publication of TWI374480B publication Critical patent/TWI374480B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
TW093124557A 2003-08-29 2004-08-16 Thin film forming apparatus and method of cleaning the same TW200522165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003305722A JP4272486B2 (ja) 2003-08-29 2003-08-29 薄膜形成装置及び薄膜形成装置の洗浄方法

Publications (2)

Publication Number Publication Date
TW200522165A TW200522165A (en) 2005-07-01
TWI374480B true TWI374480B (enExample) 2012-10-11

Family

ID=34372421

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124557A TW200522165A (en) 2003-08-29 2004-08-16 Thin film forming apparatus and method of cleaning the same

Country Status (4)

Country Link
US (1) US7520937B2 (enExample)
JP (1) JP4272486B2 (enExample)
KR (1) KR100893252B1 (enExample)
TW (1) TW200522165A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211235B2 (en) * 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7521705B2 (en) * 2005-08-15 2009-04-21 Micron Technology, Inc. Reproducible resistance variable insulating memory devices having a shaped bottom electrode
US7494943B2 (en) * 2005-10-20 2009-02-24 Tokyo Electron Limited Method for using film formation apparatus
US20070093069A1 (en) * 2005-10-21 2007-04-26 Chien-Hua Tsai Purge process after dry etching
JP4786495B2 (ja) * 2005-11-24 2011-10-05 東京エレクトロン株式会社 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
JP4245012B2 (ja) * 2006-07-13 2009-03-25 東京エレクトロン株式会社 処理装置及びこのクリーニング方法
US20080142046A1 (en) * 2006-12-13 2008-06-19 Andrew David Johnson Thermal F2 etch process for cleaning CVD chambers
KR100864258B1 (ko) * 2007-02-27 2008-10-17 (주)지원테크 유리질 제품의 세정 방법 및 유리질 제품의 세정 장치
JP2010239115A (ja) * 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP5346904B2 (ja) * 2009-11-27 2013-11-20 東京エレクトロン株式会社 縦型成膜装置およびその使用方法
CN102776488B (zh) * 2011-05-10 2014-08-27 北京北方微电子基地设备工艺研究中心有限责任公司 化学气相沉积反应腔装置及具有其的化学气相沉积设备
JP6124724B2 (ja) * 2013-07-25 2017-05-10 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
JP6602699B2 (ja) * 2016-03-14 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
CN113463068B (zh) * 2021-05-31 2023-04-07 上海中欣晶圆半导体科技有限公司 半导体成膜apcvd机台工艺腔体干湿结合的保养方法
US20240145230A1 (en) * 2022-10-28 2024-05-02 Applied Materials, Inc. Semiconductor cleaning using plasma-free precursors

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JP2746448B2 (ja) 1990-02-07 1998-05-06 セントラル硝子株式会社 混合ガス組成物
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置
US5264396A (en) * 1993-01-14 1993-11-23 Micron Semiconductor, Inc. Method for enhancing nitridation and oxidation growth by introducing pulsed NF3
US5350480A (en) * 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
JPH0786242A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体装置の製造方法
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
US5770263A (en) * 1995-11-08 1998-06-23 Micron Technology, Inc. Method for in situ removal of particulate residues resulting from hydrofluoric acid cleaning treatments
JP3400293B2 (ja) * 1996-05-01 2003-04-28 株式会社東芝 Ｃｖｄ装置及びそのクリーニング方法
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US20050188923A1 (en) * 1997-08-11 2005-09-01 Cook Robert C. Substrate carrier for parallel wafer processing reactor
DE19813757C2 (de) * 1998-03-27 2000-12-14 Siemens Ag Verfahren zur Herstellung einer mit Fluor belgten Halbleiteroberfläche
US6383300B1 (en) 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
US6905800B1 (en) * 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
JP2002164335A (ja) 2000-11-27 2002-06-07 Canon Sales Co Inc 半導体製造装置の洗浄方法及び半導体製造装置
KR20040065154A (ko) * 2001-12-13 2004-07-21 쇼와 덴코 가부시키가이샤 반도체 제조장치용 클리닝가스 및 이 가스를 사용한클리닝방법
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
US7361599B2 (en) * 2002-09-03 2008-04-22 Texas Instruments Incorporated Integrated circuit and method
JP2004128281A (ja) * 2002-10-03 2004-04-22 Tokyo Electron Ltd 基板処理方法および基板処理装置
JP3872027B2 (ja) * 2003-03-07 2007-01-24 株式会社東芝 クリーニング方法及び半導体製造装置
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
JP3974547B2 (ja) * 2003-03-31 2007-09-12 株式会社東芝 半導体装置および半導体装置の製造方法
US7479454B2 (en) * 2003-09-30 2009-01-20 Tokyo Electron Limited Method and processing system for monitoring status of system components
US20050211264A1 (en) * 2004-03-25 2005-09-29 Tokyo Electron Limited Of Tbs Broadcast Center Method and processing system for plasma-enhanced cleaning of system components
JP4675127B2 (ja) * 2004-04-23 2011-04-20 東京エレクトロン株式会社 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
US20060017043A1 (en) * 2004-07-23 2006-01-26 Dingjun Wu Method for enhancing fluorine utilization
US7119032B2 (en) * 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
JP2006114780A (ja) * 2004-10-15 2006-04-27 Tokyo Electron Ltd 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム

Also Published As

Publication number Publication date
KR100893252B1 (ko) 2009-04-17
US20050066993A1 (en) 2005-03-31
US7520937B2 (en) 2009-04-21
TW200522165A (en) 2005-07-01
JP2005079218A (ja) 2005-03-24
KR20050021338A (ko) 2005-03-07
JP4272486B2 (ja) 2009-06-03

Similar Documents

Publication Publication Date Title
TWI374480B (enExample)
TWI266811B (en) Cleaning method for thin film formation system
US8080109B2 (en) Film formation apparatus and method for using the same
JP3140068B2 (ja) クリーニング方法
TWI415189B (zh) 膜形成裝置及其使用方法
WO2002041376A1 (fr) Procede de nettoyage de la chambre de traitement d'un appareil de traitement de semi-conducteurs
JP2009544849A (ja) 膜形成装置のクリーニング方法および膜形成装置
WO2002047142A1 (en) Method and apparatus for treating article to be treated
TW202104636A (zh) 成膜方法及成膜裝置
KR20060053275A (ko) 박막 형성 장치의 세정 방법, 박막 형성 장치 및 프로그램
JP4675127B2 (ja) 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
TWI738053B (zh) 清潔方法、半導體裝置之製造方法、基板處理裝置及記錄媒體
JP2008283148A (ja) 薄膜形成装置の洗浄方法、薄膜形成方法及び薄膜形成装置
JP4786495B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム
KR100901053B1 (ko) 박막 형성 장치의 세정 방법, 박막 형성 장치 및 프로그램을 기록한 컴퓨터로 판독 가능한 기록 매체
WO2022080153A1 (ja) 基板処理方法および基板処理装置
WO2002073675A1 (fr) Procede de nettoyage pour dispositif de traitement de substrat et dispositif de traitement de substrat
JP4312198B2 (ja) 薄膜形成装置の洗浄方法、薄膜形成装置及びプログラム
JP2008031510A (ja) 成膜装置のクリーニング方法および成膜装置
JP5661444B2 (ja) 薄膜形成装置、薄膜形成装置の洗浄方法及びプログラム
JP2004343095A (ja) 熱処理装置のクリーニング方法
JP2025158811A (ja) 成膜装置の運用方法及び成膜装置
JP2008211106A (ja) 半導体装置の製造方法、及び基板処理装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees