TW200508801A - Silicon-containing polymer, resist composition and patterning process - Google Patents
Silicon-containing polymer, resist composition and patterning processInfo
- Publication number
- TW200508801A TW200508801A TW093115133A TW93115133A TW200508801A TW 200508801 A TW200508801 A TW 200508801A TW 093115133 A TW093115133 A TW 093115133A TW 93115133 A TW93115133 A TW 93115133A TW 200508801 A TW200508801 A TW 200508801A
- Authority
- TW
- Taiwan
- Prior art keywords
- alkyl
- silicon
- resist composition
- containing polymer
- formula
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/007—Explosive cutting or perforating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F30/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal
- C08F30/04—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal
- C08F30/08—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium or a metal containing a metal containing silicon
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/109—Polyester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/11—Vinyl alcohol polymer or derivative
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003148656A JP4114064B2 (ja) | 2003-05-27 | 2003-05-27 | 珪素含有高分子化合物、レジスト材料及びパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200508801A true TW200508801A (en) | 2005-03-01 |
TWI308260B TWI308260B (zh) | 2009-04-01 |
Family
ID=33447663
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093115133A TW200508801A (en) | 2003-05-27 | 2004-05-27 | Silicon-containing polymer, resist composition and patterning process |
Country Status (4)
Country | Link |
---|---|
US (1) | US6994946B2 (zh) |
JP (1) | JP4114064B2 (zh) |
KR (1) | KR100658031B1 (zh) |
TW (1) | TW200508801A (zh) |
Cited By (2)
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---|---|---|---|---|
TWI422972B (zh) * | 2006-09-25 | 2014-01-11 | Fujifilm Corp | 光阻組成物、用於光阻組成物之樹脂、用於合成該樹脂之化合物、及使用該光阻組成物之圖案形成方法 |
US8679724B2 (en) | 2005-12-09 | 2014-03-25 | Fujifilm Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
Families Citing this family (34)
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JP2005272506A (ja) * | 2004-03-23 | 2005-10-06 | Daikin Ind Ltd | 含フッ素シルセスキオキサン重合体 |
US7901864B2 (en) * | 2004-09-23 | 2011-03-08 | International Business Machines Corporation | Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition |
JP4368319B2 (ja) * | 2005-03-14 | 2009-11-18 | 富士フイルム株式会社 | 絶縁膜とそれを製造する方法、およびそれを用いた電子デバイス |
TWI332122B (en) * | 2005-04-06 | 2010-10-21 | Shinetsu Chemical Co | Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process |
JP4595688B2 (ja) * | 2005-06-10 | 2010-12-08 | ソニー株式会社 | レジスト材料の製造方法およびレジスト材料ならびに露光方法 |
TWI403843B (zh) * | 2005-09-13 | 2013-08-01 | Fujifilm Corp | 正型光阻組成物及使用它之圖案形成方法 |
JP5083444B2 (ja) * | 2005-09-28 | 2012-11-28 | Jnc株式会社 | フッ素系重合体および樹脂組成物 |
US7687593B2 (en) * | 2005-09-28 | 2010-03-30 | Chisso Corporation | Fluorinated polymer and polymer composition |
KR101280478B1 (ko) * | 2005-10-26 | 2013-07-15 | 주식회사 동진쎄미켐 | 감광성 수지 조성물 |
EP1780198B1 (en) * | 2005-10-31 | 2011-10-05 | Shin-Etsu Chemical Co., Ltd. | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process |
EP1780199B1 (en) * | 2005-10-31 | 2012-02-01 | Shin-Etsu Chemical Co., Ltd. | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process |
JP4929687B2 (ja) * | 2005-11-16 | 2012-05-09 | Jnc株式会社 | 感光性化合物、添加用化合物、これらを含有するポジ型感光性組成物、及びこのポジ型感光性組成物の膜を有する表示素子 |
JP4881687B2 (ja) * | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7951524B2 (en) * | 2006-04-28 | 2011-05-31 | International Business Machines Corporation | Self-topcoating photoresist for photolithography |
US8945808B2 (en) * | 2006-04-28 | 2015-02-03 | International Business Machines Corporation | Self-topcoating resist for photolithography |
US8034532B2 (en) | 2006-04-28 | 2011-10-11 | International Business Machines Corporation | High contact angle topcoat material and use thereof in lithography process |
JP5124805B2 (ja) | 2006-06-27 | 2013-01-23 | 信越化学工業株式会社 | 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
JP5124806B2 (ja) * | 2006-06-27 | 2013-01-23 | 信越化学工業株式会社 | 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法 |
US8148043B2 (en) * | 2006-06-28 | 2012-04-03 | Dow Corning Corporation | Silsesquioxane resin systems with base additives bearing electron-attracting functionalities |
KR101216060B1 (ko) | 2006-06-28 | 2012-12-28 | 도쿄 오카 고교 가부시키가이샤 | 전자 유인성 관능 그룹을 갖는 염기 첨가제를 함유한 실세스퀴옥산 수지 시스템 |
US8178287B2 (en) * | 2006-09-08 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist composition and method of forming a resist pattern |
KR101035742B1 (ko) * | 2006-09-28 | 2011-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법 |
JP4509080B2 (ja) | 2006-09-28 | 2010-07-21 | 信越化学工業株式会社 | シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法 |
JP2008106165A (ja) * | 2006-10-26 | 2008-05-08 | Chisso Corp | インクジェット用インクおよび当該インクにより得られる硬化膜 |
US7560222B2 (en) * | 2006-10-31 | 2009-07-14 | International Business Machines Corporation | Si-containing polymers for nano-pattern device fabrication |
JP2008218631A (ja) * | 2007-03-02 | 2008-09-18 | Fujifilm Corp | 絶縁膜形成用組成物および絶縁膜 |
US8013077B2 (en) | 2007-03-02 | 2011-09-06 | Fujifilm Corporation | Insulating film forming composition and production method of insulating film |
KR101041145B1 (ko) * | 2008-07-09 | 2011-06-13 | 삼성모바일디스플레이주식회사 | 폴리실세스퀴옥산 공중합체, 그의 제조방법, 이를 이용하는폴리실세스퀴옥산 공중합체 박막, 및 이를 이용하는유기전계발광표시장치 |
US8263709B2 (en) * | 2009-11-16 | 2012-09-11 | University Of Massachusetts | Crystal nucleating agents, crystalline polymer composition, methods of manufacture thereof, and articles thereof |
JP5761175B2 (ja) * | 2010-03-17 | 2015-08-12 | Jsr株式会社 | 感放射線性樹脂組成物及びレジストパターン形成方法 |
US20110287593A1 (en) * | 2010-05-20 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming semiconductor film and method for manufacturing semiconductor device |
JP5794243B2 (ja) | 2013-02-18 | 2015-10-14 | 信越化学工業株式会社 | パターン形成方法 |
JP5842841B2 (ja) | 2013-02-18 | 2016-01-13 | 信越化学工業株式会社 | パターン形成方法 |
KR20150101074A (ko) * | 2014-02-26 | 2015-09-03 | 삼성전자주식회사 | 포토레지스트 조성물, 이를 이용한 패턴 형성 방법 및 반도체 소자의 제조 방법 |
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US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
US5310619A (en) | 1986-06-13 | 1994-05-10 | Microsi, Inc. | Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable |
DE3750275T3 (de) | 1986-06-13 | 1998-10-01 | Microsi Inc | Lackzusammensetzung und -anwendung. |
JPH02118651A (ja) | 1988-10-28 | 1990-05-02 | Matsushita Electric Ind Co Ltd | パターン形成材料 |
JPH04330709A (ja) | 1991-04-25 | 1992-11-18 | Matsushita Electric Ind Co Ltd | 微細パターン形成材料およびパターン形成方法 |
EP0523957A1 (en) | 1991-07-17 | 1993-01-20 | Japan Synthetic Rubber Co., Ltd. | Radiation-sensitive composition |
EP0537524A1 (en) | 1991-10-17 | 1993-04-21 | Shipley Company Inc. | Radiation sensitive compositions and methods |
JPH05158239A (ja) | 1991-12-03 | 1993-06-25 | Fuji Photo Film Co Ltd | ネガ型感光性組成物 |
JP3010607B2 (ja) | 1992-02-25 | 2000-02-21 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JP2976414B2 (ja) | 1992-04-10 | 1999-11-10 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
JPH05257282A (ja) | 1992-03-12 | 1993-10-08 | Toray Ind Inc | 微細加工用レジスト組成物 |
JPH05289322A (ja) | 1992-04-10 | 1993-11-05 | Hitachi Ltd | パタン形成材料及びそれを用いたパタン形成方法 |
US5886119A (en) | 1995-08-08 | 1999-03-23 | Olin Microelectronic Chemicals, Inc. | Terpolymers containing organosilicon side chains |
JP3505990B2 (ja) | 1997-01-31 | 2004-03-15 | 信越化学工業株式会社 | 高分子シリコーン化合物、化学増幅ポジ型レジスト材料及びパターン形成方法 |
JP3533951B2 (ja) | 1997-08-06 | 2004-06-07 | 信越化学工業株式会社 | 高分子シリコーン化合物、レジスト材料及びパターン形成方法 |
JP2000231195A (ja) | 1999-02-09 | 2000-08-22 | Fuji Photo Film Co Ltd | ポジ型シリコーン含有感光性組成物 |
JP3965547B2 (ja) | 1999-12-01 | 2007-08-29 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP3839218B2 (ja) | 2000-03-31 | 2006-11-01 | 信越化学工業株式会社 | 珪素含有化合物、レジスト組成物およびパターン形成方法 |
JP3410707B2 (ja) | 2000-04-19 | 2003-05-26 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
JP4019247B2 (ja) | 2000-06-02 | 2007-12-12 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
US7261992B2 (en) | 2000-12-21 | 2007-08-28 | International Business Machines Corporation | Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions |
JP4598948B2 (ja) | 2000-12-26 | 2010-12-15 | トッパン・フォームズ株式会社 | 再剥離性情報担持用シート |
TWI245774B (en) | 2001-03-01 | 2005-12-21 | Shinetsu Chemical Co | Silicon-containing polymer, resist composition and patterning process |
JP3874070B2 (ja) | 2001-03-01 | 2007-01-31 | 信越化学工業株式会社 | 珪素含有高分子化合物、レジスト材料及びパターン形成方法 |
JP3915895B2 (ja) | 2001-03-01 | 2007-05-16 | 信越化学工業株式会社 | 珪素含有高分子化合物、レジスト材料及びパターン形成方法 |
US6919161B2 (en) * | 2002-07-02 | 2005-07-19 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing polymer, resist composition and patterning process |
JP3912512B2 (ja) | 2002-07-02 | 2007-05-09 | 信越化学工業株式会社 | 珪素含有高分子化合物、レジスト材料及びパターン形成方法 |
-
2003
- 2003-05-27 JP JP2003148656A patent/JP4114064B2/ja not_active Expired - Fee Related
-
2004
- 2004-05-25 KR KR1020040037262A patent/KR100658031B1/ko not_active IP Right Cessation
- 2004-05-26 US US10/853,783 patent/US6994946B2/en active Active
- 2004-05-27 TW TW093115133A patent/TW200508801A/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8679724B2 (en) | 2005-12-09 | 2014-03-25 | Fujifilm Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
US9081279B2 (en) | 2005-12-09 | 2015-07-14 | Fujifilm Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
US9709891B2 (en) | 2005-12-09 | 2017-07-18 | Fujifilm Corporation | Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition |
TWI422972B (zh) * | 2006-09-25 | 2014-01-11 | Fujifilm Corp | 光阻組成物、用於光阻組成物之樹脂、用於合成該樹脂之化合物、及使用該光阻組成物之圖案形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100658031B1 (ko) | 2006-12-15 |
US20040242821A1 (en) | 2004-12-02 |
KR20040101931A (ko) | 2004-12-03 |
US6994946B2 (en) | 2006-02-07 |
TWI308260B (zh) | 2009-04-01 |
JP4114064B2 (ja) | 2008-07-09 |
JP2004352743A (ja) | 2004-12-16 |
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