TW200507246A - Non-volatile semiconductor memory device, electronic card, and electronic device - Google Patents

Non-volatile semiconductor memory device, electronic card, and electronic device

Info

Publication number
TW200507246A
TW200507246A TW093118885A TW93118885A TW200507246A TW 200507246 A TW200507246 A TW 200507246A TW 093118885 A TW093118885 A TW 093118885A TW 93118885 A TW93118885 A TW 93118885A TW 200507246 A TW200507246 A TW 200507246A
Authority
TW
Taiwan
Prior art keywords
word lines
electronic
transmitting
transistors
semiconductor memory
Prior art date
Application number
TW093118885A
Other languages
English (en)
Other versions
TWI250641B (en
Inventor
Takuya Futatsuyama
Koji Hosono
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200507246A publication Critical patent/TW200507246A/zh
Application granted granted Critical
Publication of TWI250641B publication Critical patent/TWI250641B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
TW093118885A 2003-07-18 2004-06-28 Non-volatile semiconductor memory device, electronic card, and electronic device TWI250641B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003199374A JP2005039016A (ja) 2003-07-18 2003-07-18 不揮発性半導体記憶装置、電子カード及び電子装置

Publications (2)

Publication Number Publication Date
TW200507246A true TW200507246A (en) 2005-02-16
TWI250641B TWI250641B (en) 2006-03-01

Family

ID=33535566

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118885A TWI250641B (en) 2003-07-18 2004-06-28 Non-volatile semiconductor memory device, electronic card, and electronic device

Country Status (5)

Country Link
US (2) US6839283B1 (zh)
JP (1) JP2005039016A (zh)
KR (1) KR100665162B1 (zh)
CN (1) CN1311555C (zh)
TW (1) TWI250641B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005039016A (ja) * 2003-07-18 2005-02-10 Toshiba Corp 不揮発性半導体記憶装置、電子カード及び電子装置
JP4203372B2 (ja) * 2003-08-26 2008-12-24 富士雄 舛岡 不揮発性半導体記憶装置及びそれを備えてなる液晶表示装置
JP2005100538A (ja) * 2003-09-25 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置及びこれを用いた電子装置
JP2005100548A (ja) * 2003-09-26 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置及び電子カード
JP2005191413A (ja) * 2003-12-26 2005-07-14 Toshiba Corp 不揮発性半導体記憶装置
JP4157065B2 (ja) * 2004-03-29 2008-09-24 株式会社東芝 半導体記憶装置
JP4690713B2 (ja) * 2004-12-08 2011-06-01 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
JP4801986B2 (ja) * 2005-02-03 2011-10-26 株式会社東芝 半導体記憶装置
JP4761872B2 (ja) * 2005-08-01 2011-08-31 株式会社東芝 不揮発性半導体記憶装置
KR100736692B1 (ko) 2006-01-09 2007-07-06 한국과학기술원 저잡음 특성의 광대역 비간섭성 광원을 주입하여 파장잠김된 패브리 페롯 레이저 다이오드의 파장 무의존성동작을 구현하는 파장분할 다중방식 수동형 광 가입자망
JP2007207380A (ja) 2006-02-03 2007-08-16 Renesas Technology Corp 不揮発性半導体記憶装置
JP2008103643A (ja) * 2006-10-20 2008-05-01 Toshiba Corp 不揮発性半導体メモリ
KR100897603B1 (ko) 2007-06-20 2009-05-14 삼성전자주식회사 반도체 메모리 장치
JP5091788B2 (ja) 2008-07-15 2012-12-05 株式会社東芝 Ｎａｎｄ型フラッシュメモリ
JP5305856B2 (ja) * 2008-11-19 2013-10-02 株式会社東芝 不揮発性半導体メモリ
US9142305B2 (en) 2012-06-28 2015-09-22 Sandisk Technologies Inc. System to reduce stress on word line select transistor during erase operation
CN203205073U (zh) 2012-08-31 2013-09-18 株式会社东芝 非易失性半导体存储装置
JP6151504B2 (ja) * 2012-10-17 2017-06-21 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR102242037B1 (ko) 2014-04-07 2021-04-21 삼성전자주식회사 불 휘발성 메모리 장치
JP6559590B2 (ja) 2016-02-03 2019-08-14 東芝メモリ株式会社 半導体記憶装置
JP2020065022A (ja) 2018-10-19 2020-04-23 キオクシア株式会社 半導体装置及び半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2855744C3 (de) * 1978-12-22 1982-02-18 Siemens AG, 1000 Berlin und 8000 München MOS-integrierte Schaltungsanordnung zur Unterdrückung von in Wortleitungstreibern von Halbleiterspeicher fließenden Ruheströmen
KR950010477B1 (ko) * 1992-08-20 1995-09-18 삼성전자주식회사 낸드쎌을 갖는 불휘발성 반도체 메모리 장치
KR970003379B1 (ko) 1993-09-06 1997-03-18 엘지전자 주식회사 팩시밀리의 급지 감지장치 및 급지 제어방법
US5619460A (en) * 1995-06-07 1997-04-08 International Business Machines Corporation Method of testing a random access memory
JP3540640B2 (ja) * 1998-12-22 2004-07-07 株式会社東芝 不揮発性半導体記憶装置
JP4157269B2 (ja) 2000-06-09 2008-10-01 株式会社東芝 半導体記憶装置
JP4503809B2 (ja) 2000-10-31 2010-07-14 株式会社東芝 半導体記憶装置
CN1423278B (zh) * 2001-12-04 2012-05-30 旺宏电子股份有限公司 具有存储器阵列的高密度集成电路
JP2005039016A (ja) * 2003-07-18 2005-02-10 Toshiba Corp 不揮発性半導体記憶装置、電子カード及び電子装置

Also Published As

Publication number Publication date
CN1577862A (zh) 2005-02-09
KR20050009684A (ko) 2005-01-25
US20050058011A1 (en) 2005-03-17
US20050013168A1 (en) 2005-01-20
KR100665162B1 (ko) 2007-01-09
US6839283B1 (en) 2005-01-04
US7133314B2 (en) 2006-11-07
TWI250641B (en) 2006-03-01
CN1311555C (zh) 2007-04-18
JP2005039016A (ja) 2005-02-10

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees