TW200505966A - Organosilicate resin formulation for use in microelectronic devices - Google Patents

Organosilicate resin formulation for use in microelectronic devices

Info

Publication number
TW200505966A
TW200505966A TW093108398A TW93108398A TW200505966A TW 200505966 A TW200505966 A TW 200505966A TW 093108398 A TW093108398 A TW 093108398A TW 93108398 A TW93108398 A TW 93108398A TW 200505966 A TW200505966 A TW 200505966A
Authority
TW
Taiwan
Prior art keywords
group
alkoxy
bonded
microelectronic devices
resin formulation
Prior art date
Application number
TW093108398A
Other languages
English (en)
Inventor
Kiran K Baikerikar
shao-guang Feng
Jack E Hetzner
John Michael Maher
Michael E Mills
Paul J Popa
Richard J Strittmatter
Larry R Wilson
Original Assignee
Dow Global Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Global Technologies Inc filed Critical Dow Global Technologies Inc
Publication of TW200505966A publication Critical patent/TW200505966A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
TW093108398A 2003-04-02 2004-03-26 Organosilicate resin formulation for use in microelectronic devices TW200505966A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45973003P 2003-04-02 2003-04-02

Publications (1)

Publication Number Publication Date
TW200505966A true TW200505966A (en) 2005-02-16

Family

ID=33159680

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093108398A TW200505966A (en) 2003-04-02 2004-03-26 Organosilicate resin formulation for use in microelectronic devices

Country Status (9)

Country Link
US (1) US8178159B2 (zh)
EP (2) EP2278611B1 (zh)
JP (1) JP2006522861A (zh)
KR (1) KR101197526B1 (zh)
CN (1) CN1768418B (zh)
AT (1) ATE487231T1 (zh)
DE (1) DE602004029879D1 (zh)
TW (1) TW200505966A (zh)
WO (1) WO2004090965A2 (zh)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200505966A (en) 2003-04-02 2005-02-16 Dow Global Technologies Inc Organosilicate resin formulation for use in microelectronic devices
US9257302B1 (en) 2004-03-25 2016-02-09 Novellus Systems, Inc. CVD flowable gap fill
JP5412037B2 (ja) * 2004-12-17 2014-02-12 ダウ・コーニング・コーポレイション シロキサン樹脂、シロキサン樹脂の調製方法および抗反射コーティング組成物
ATE400672T1 (de) * 2004-12-17 2008-07-15 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
US7691275B2 (en) * 2005-02-28 2010-04-06 Board Of Regents, The University Of Texas System Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing
KR101324052B1 (ko) 2006-02-13 2013-11-01 다우 코닝 코포레이션 반사방지 코팅 재료
JP5007511B2 (ja) * 2006-02-14 2012-08-22 富士通株式会社 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置
US20070212886A1 (en) * 2006-03-13 2007-09-13 Dong Seon Uh Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions
US7629260B2 (en) * 2006-03-22 2009-12-08 Cheil Industries, Inc. Organosilane hardmask compositions and methods of producing semiconductor devices using the same
KR20070095736A (ko) * 2006-03-22 2007-10-01 제일모직주식회사 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
US8581094B2 (en) 2006-09-20 2013-11-12 Dow Global Technologies, Llc Electronic device module comprising polyolefin copolymer
US9245739B2 (en) * 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
JP5470687B2 (ja) * 2007-08-10 2014-04-16 富士通株式会社 シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置
WO2009088600A1 (en) 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
US9023433B2 (en) 2008-01-15 2015-05-05 Dow Corning Corporation Silsesquioxane resins and method of using them to form an antireflective coating
CN101990551B (zh) 2008-03-04 2012-10-03 陶氏康宁公司 倍半硅氧烷树脂
KR101541939B1 (ko) 2008-03-05 2015-08-04 다우 코닝 코포레이션 실세스퀴옥산 수지
EP2373722A4 (en) 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
JP5062352B2 (ja) * 2010-09-09 2012-10-31 Ｊｓｒ株式会社 レジストパターン形成方法
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9068086B2 (en) 2011-12-21 2015-06-30 Dow Global Technologies Llc Compositions for antireflective coatings
US8748317B2 (en) 2012-08-03 2014-06-10 Infineon Technologies Austria Ag Method of manufacturing a semiconductor device including a dielectric structure
US8999625B2 (en) * 2013-02-14 2015-04-07 International Business Machines Corporation Silicon-containing antireflective coatings including non-polymeric silsesquioxanes
US9847222B2 (en) 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US10049921B2 (en) 2014-08-20 2018-08-14 Lam Research Corporation Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor
US9502255B2 (en) 2014-10-17 2016-11-22 Lam Research Corporation Low-k damage repair and pore sealing agents with photosensitive end groups
KR101807208B1 (ko) 2015-08-18 2017-12-08 주식회사 엘지화학 저굴절층 및 이를 포함하는 반사 방지 필름
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9916977B2 (en) 2015-11-16 2018-03-13 Lam Research Corporation Low k dielectric deposition via UV driven photopolymerization
KR102016710B1 (ko) 2016-01-07 2019-09-02 주식회사 엘지화학 반사 방지 필름

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954475A (en) 1971-09-03 1976-05-04 Minnesota Mining And Manufacturing Company Photosensitive elements containing chromophore-substituted vinyl-halomethyl-s-triazines
US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
ATE37242T1 (de) 1984-02-10 1988-09-15 Ciba Geigy Ag Verfahren zur herstellung einer schutzschicht oder einer reliefabbildung.
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
US4731605A (en) 1987-02-20 1988-03-15 Nixon James E Remote garage door opener conversion
US5155175A (en) 1989-12-08 1992-10-13 Intellectual Property Law Dept. Crosslinkable fluorinated polyarylene ether composition
US5179188A (en) 1990-04-17 1993-01-12 Raychem Corporation Crosslinkable fluorinated aromatic ether composition
US5115082A (en) 1990-04-17 1992-05-19 Raychem Corporation Fluorinated poly(arylene ether)
JP2667742B2 (ja) * 1990-08-28 1997-10-27 沖電気工業株式会社 感光性樹脂組成物
US5262280A (en) 1992-04-02 1993-11-16 Shipley Company Inc. Radiation sensitive compositions
JPH06148895A (ja) * 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
JPH06145599A (ja) * 1992-11-06 1994-05-24 Toray Ind Inc コーティング用組成物
JP3123351B2 (ja) 1994-06-15 2001-01-09 信越化学工業株式会社 硬化性シリコーン組成物
US5994489A (en) 1994-10-24 1999-11-30 The Dow Chemical Company Adhesion promoter and self-priming arylcyclobutene resin compositions
US5959157A (en) 1995-06-26 1999-09-28 Alliedsignal, Inc. Process for making hydroxy-substituted ethynylated biphenyl compounds
US5986045A (en) 1995-06-26 1999-11-16 Alliedsignal Inc. Poly(arylene ether) compositions and the method for their manufacture
US5874516A (en) 1995-07-13 1999-02-23 Air Products And Chemicals, Inc. Nonfunctionalized poly(arylene ethers)
TW412567B (en) 1995-07-27 2000-11-21 Toray Industries Polyester composition and its film
JP4260882B2 (ja) 1995-09-12 2009-04-30 ダウ グローバル テクノロジーズ インコーポレイティド エチニル置換芳香族化合物、それらの合成、ポリマーおよび使用
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
FR2754921B1 (fr) 1996-10-22 1998-12-18 Dziulko Adolphe Richard Montre services-tennis permettant de visualiser instantanement la vitesse de la balle de service
US6218078B1 (en) 1997-09-24 2001-04-17 Advanced Micro Devices, Inc. Creation of an etch hardmask by spin-on technique
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6184284B1 (en) 1998-08-24 2001-02-06 The Dow Chemical Company Adhesion promoter and self-priming resin compositions and articles made therefrom
KR20010101419A (ko) * 1999-01-07 2001-11-14 크리스 로저 에이취. 유기히드리도실록산 수지로부터 생성된 유전막
US6218317B1 (en) 1999-04-19 2001-04-17 National Semiconductor Corp. Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration
US6509259B1 (en) 1999-06-09 2003-01-21 Alliedsignal Inc. Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices
JP2001022082A (ja) * 1999-07-12 2001-01-26 Jsr Corp レジスト下層膜用組成物の製造方法
JP3361779B2 (ja) * 1999-08-05 2003-01-07 日本山村硝子株式会社 コーティング組成物
US6498399B2 (en) 1999-09-08 2002-12-24 Alliedsignal Inc. Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US7115531B2 (en) * 2000-08-21 2006-10-03 Dow Global Technologies Inc. Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices
US6441491B1 (en) 2000-10-25 2002-08-27 International Business Machines Corporation Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same
US6406794B1 (en) * 2001-02-08 2002-06-18 Jsr Corporation Film-forming composition
JP2002299441A (ja) * 2001-03-30 2002-10-11 Jsr Corp デュアルダマシン構造の形成方法
EP1493183B1 (en) * 2002-04-02 2012-12-05 Dow Global Technologies LLC Process for making air gap containing semiconducting devices and resulting semiconducting device
KR101051276B1 (ko) * 2002-04-02 2011-07-22 다우 글로벌 테크놀로지스 엘엘씨 이중 다마신 배선의 패터닝을 위한 3층 마스킹 구조물
TW200505966A (en) 2003-04-02 2005-02-16 Dow Global Technologies Inc Organosilicate resin formulation for use in microelectronic devices

Also Published As

Publication number Publication date
KR20050108417A (ko) 2005-11-16
US8178159B2 (en) 2012-05-15
EP1614151B1 (en) 2010-11-03
EP1614151A2 (en) 2006-01-11
WO2004090965A2 (en) 2004-10-21
EP2278611B1 (en) 2012-09-19
ATE487231T1 (de) 2010-11-15
DE602004029879D1 (de) 2010-12-16
CN1768418A (zh) 2006-05-03
CN1768418B (zh) 2011-01-19
EP2278611A1 (en) 2011-01-26
KR101197526B1 (ko) 2012-11-09
JP2006522861A (ja) 2006-10-05
WO2004090965A3 (en) 2005-04-14
US20070185298A1 (en) 2007-08-09

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