DE602004029879D1 - Verfahren zur herstellung einer antireflektiven beschichtung - Google Patents
Verfahren zur herstellung einer antireflektiven beschichtungInfo
- Publication number
- DE602004029879D1 DE602004029879D1 DE602004029879T DE602004029879T DE602004029879D1 DE 602004029879 D1 DE602004029879 D1 DE 602004029879D1 DE 602004029879 T DE602004029879 T DE 602004029879T DE 602004029879 T DE602004029879 T DE 602004029879T DE 602004029879 D1 DE602004029879 D1 DE 602004029879D1
- Authority
- DE
- Germany
- Prior art keywords
- group
- alkoxy
- bonded
- silicon atom
- acyloxy silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000006117 anti-reflective coating Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- -1 acyloxy silane Chemical compound 0.000 abstract 3
- 125000003545 alkoxy group Chemical group 0.000 abstract 3
- 229910000077 silane Inorganic materials 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003377 acid catalyst Substances 0.000 abstract 1
- 125000003118 aryl group Chemical group 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Silicon Polymers (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Paints Or Removers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US45973003P | 2003-04-02 | 2003-04-02 | |
PCT/US2004/010330 WO2004090965A2 (en) | 2003-04-02 | 2004-03-31 | Organosilicate resin formulation for use in microelectronic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004029879D1 true DE602004029879D1 (de) | 2010-12-16 |
Family
ID=33159680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004029879T Expired - Lifetime DE602004029879D1 (de) | 2003-04-02 | 2004-03-31 | Verfahren zur herstellung einer antireflektiven beschichtung |
Country Status (9)
Country | Link |
---|---|
US (1) | US8178159B2 (de) |
EP (2) | EP1614151B1 (de) |
JP (1) | JP2006522861A (de) |
KR (1) | KR101197526B1 (de) |
CN (1) | CN1768418B (de) |
AT (1) | ATE487231T1 (de) |
DE (1) | DE602004029879D1 (de) |
TW (1) | TW200505966A (de) |
WO (1) | WO2004090965A2 (de) |
Families Citing this family (33)
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TW200505966A (en) | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
US9257302B1 (en) | 2004-03-25 | 2016-02-09 | Novellus Systems, Inc. | CVD flowable gap fill |
CN101072813B (zh) * | 2004-12-17 | 2011-06-08 | 陶氏康宁公司 | 硅氧烷树脂涂料 |
DE602005008100D1 (de) * | 2004-12-17 | 2008-08-21 | Dow Corning | Verfahren zur ausbildung einer antireflexionsbeschichtung |
US7691275B2 (en) * | 2005-02-28 | 2010-04-06 | Board Of Regents, The University Of Texas System | Use of step and flash imprint lithography for direct imprinting of dielectric materials for dual damascene processing |
CN101371196B (zh) | 2006-02-13 | 2012-07-04 | 陶氏康宁公司 | 抗反射涂料 |
JP5007511B2 (ja) * | 2006-02-14 | 2012-08-22 | 富士通株式会社 | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 |
US20070212886A1 (en) * | 2006-03-13 | 2007-09-13 | Dong Seon Uh | Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions |
US7629260B2 (en) * | 2006-03-22 | 2009-12-08 | Cheil Industries, Inc. | Organosilane hardmask compositions and methods of producing semiconductor devices using the same |
KR20070095736A (ko) * | 2006-03-22 | 2007-10-01 | 제일모직주식회사 | 유기실란계 중합체를 포함하는 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
US8581094B2 (en) | 2006-09-20 | 2013-11-12 | Dow Global Technologies, Llc | Electronic device module comprising polyolefin copolymer |
US9245739B2 (en) * | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
JP5470687B2 (ja) * | 2007-08-10 | 2014-04-16 | 富士通株式会社 | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 |
JP5587791B2 (ja) | 2008-01-08 | 2014-09-10 | 東レ・ダウコーニング株式会社 | シルセスキオキサン樹脂 |
CN101910253B (zh) | 2008-01-15 | 2013-04-10 | 陶氏康宁公司 | 倍半硅氧烷树脂 |
KR20100134578A (ko) | 2008-03-04 | 2010-12-23 | 다우 코닝 코포레이션 | 실세스퀴옥산 수지 |
EP2250215B1 (de) | 2008-03-05 | 2020-03-25 | Dow Silicones Corporation | Silsesquioxanharze |
JP5662338B2 (ja) | 2008-12-10 | 2015-01-28 | ダウ コーニング コーポレーションDow Corning Corporation | シルセスキオキサン樹脂 |
JP5062352B2 (ja) | 2010-09-09 | 2012-10-31 | Jsr株式会社 | レジストパターン形成方法 |
US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
US9011591B2 (en) | 2011-09-21 | 2015-04-21 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US9366964B2 (en) | 2011-09-21 | 2016-06-14 | Dow Global Technologies Llc | Compositions and antireflective coatings for photolithography |
US9068086B2 (en) | 2011-12-21 | 2015-06-30 | Dow Global Technologies Llc | Compositions for antireflective coatings |
US8748317B2 (en) | 2012-08-03 | 2014-06-10 | Infineon Technologies Austria Ag | Method of manufacturing a semiconductor device including a dielectric structure |
US8999625B2 (en) * | 2013-02-14 | 2015-04-07 | International Business Machines Corporation | Silicon-containing antireflective coatings including non-polymeric silsesquioxanes |
US9847222B2 (en) | 2013-10-25 | 2017-12-19 | Lam Research Corporation | Treatment for flowable dielectric deposition on substrate surfaces |
US10049921B2 (en) | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
US9502255B2 (en) | 2014-10-17 | 2016-11-22 | Lam Research Corporation | Low-k damage repair and pore sealing agents with photosensitive end groups |
KR101807208B1 (ko) | 2015-08-18 | 2017-12-08 | 주식회사 엘지화학 | 저굴절층 및 이를 포함하는 반사 방지 필름 |
US9916977B2 (en) | 2015-11-16 | 2018-03-13 | Lam Research Corporation | Low k dielectric deposition via UV driven photopolymerization |
US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
KR102016710B1 (ko) | 2016-01-07 | 2019-09-02 | 주식회사 엘지화학 | 반사 방지 필름 |
US20230146910A1 (en) * | 2021-11-11 | 2023-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and compositions for improved patterning of photoresist |
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-
2004
- 2004-03-26 TW TW093108398A patent/TW200505966A/zh unknown
- 2004-03-31 DE DE602004029879T patent/DE602004029879D1/de not_active Expired - Lifetime
- 2004-03-31 KR KR1020057018491A patent/KR101197526B1/ko active IP Right Grant
- 2004-03-31 US US10/549,356 patent/US8178159B2/en not_active Expired - Fee Related
- 2004-03-31 CN CN2004800089433A patent/CN1768418B/zh not_active Expired - Fee Related
- 2004-03-31 WO PCT/US2004/010330 patent/WO2004090965A2/en active Application Filing
- 2004-03-31 EP EP04758855A patent/EP1614151B1/de not_active Expired - Lifetime
- 2004-03-31 JP JP2006509673A patent/JP2006522861A/ja active Pending
- 2004-03-31 EP EP10177841A patent/EP2278611B1/de not_active Expired - Lifetime
- 2004-03-31 AT AT04758855T patent/ATE487231T1/de not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2004090965A2 (en) | 2004-10-21 |
WO2004090965A3 (en) | 2005-04-14 |
JP2006522861A (ja) | 2006-10-05 |
US20070185298A1 (en) | 2007-08-09 |
CN1768418B (zh) | 2011-01-19 |
ATE487231T1 (de) | 2010-11-15 |
EP2278611B1 (de) | 2012-09-19 |
CN1768418A (zh) | 2006-05-03 |
KR20050108417A (ko) | 2005-11-16 |
TW200505966A (en) | 2005-02-16 |
EP1614151B1 (de) | 2010-11-03 |
US8178159B2 (en) | 2012-05-15 |
KR101197526B1 (ko) | 2012-11-09 |
EP2278611A1 (de) | 2011-01-26 |
EP1614151A2 (de) | 2006-01-11 |
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