TW200425361A - Method for producing an integrated circuit with a rewiring device and corresponding integrated circuit - Google Patents

Method for producing an integrated circuit with a rewiring device and corresponding integrated circuit Download PDF

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TW200425361A
TW200425361A TW092132458A TW92132458A TW200425361A TW 200425361 A TW200425361 A TW 200425361A TW 092132458 A TW092132458 A TW 092132458A TW 92132458 A TW92132458 A TW 92132458A TW 200425361 A TW200425361 A TW 200425361A
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Harry Hedler
Roland Irsigler
Thorsten Meyer
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Infineon Technologies Ag
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Description

200425361 五、發明說明(1) 本發明係有關具重繞裝置積體電路之製造方法及對應 積體電路。 現今主流晶片尺寸封裝(C S P s )係被建構於預製基板條 上。依據如微球格柵陣列(Tessera /zBGA)之基板為基礎之 已知晶片尺寸封裝技術,重繞(重分配線路)或其至少部份 係已被整合入預製基板。呈現於基板上之該重繞係接著藉 由連接線或TAB連接被接觸連接至積體電路或晶片。基板 製造係需增加基板成本之複雜及昂貴處理步驟。再者,製 造及後續處理係以低度平行化,也就是具小於丨5〇晶片之 平板或狹條來實施。在此兩者成因係避免進一步降低晶片 尺寸封裝製造成本。扇出重繞亦可藉由基板為基礎之晶片 尺寸封裝技術,如B G A技術來產生。 晶圓位準封裝技術(WLP)同樣地提供製造晶片尺寸封 裝有效成本技術,但不能提供扇出重繞。晶圓位準封裝技 術基本上可使用前端晶圓,其薄膜技術係被用來製造扇入 重繞,如抗銲阻劑層之絕緣層,及焊接球。雖然被用於針 對金屬化,也就是濺鍍及電子沈積,製造,也就是光微 =及製造保護層,也就是旋轉覆蓋例之此技術步驟係為 :本入密但每晶片之個別成本可因高度平行化而維持很 拮ιΛ/晶固達1 000晶片)。此外’未來更節約成本之印刷 逐漸取代昂貴光微影處理步驟。新印刷 確接觸連接於晶圓_L,例如典型接;==片高度精 米且典型墊片開口包含6。η ΐ f ΐ隔包含130微 蛩月開匕3 6 〇破未。印刷處理因此可被用於重
第7頁 200425361 五、發明說明(2) 繞裝置之製造結構或新面板上之絕緣接線。然而,曰 準封裝技術製造不能被用來製造扇出重繞,也 = 晶片邊緣之重繞。 疋大出於 因此,本發明目的係提供具重繞裝置積體電路 成本方式製造方法及同樣地該積體電路。 即、、,勺 依據本發明’此目的係藉由如申請專利範 具重繞裝置積體電路之製造方&& 負之 19項之具重繞裝置積體電4 =错由如申“利範圍第 本發明概念基礎本質±係包含適當結 =基板為基礎之晶片尺寸封裝技術處理步驟。Π裝 可避免具重繞層之預製基板,重錶 因此, 裝製造處理期間被製造於具高U之單曰曰α尺寸封 板上。 丁仃化之間早,大面積基 本發明中,上述問題係特別藉 電路之製造方法之事實來解決,其具裝置積體 預定或後續被圖案化切口之載體裝置‘體=供具 定切口被放置該積體電路至少—二載體裝置之預 一積體電路顛倒施加至該載體裝置; < 之方式將至少 不被積體電路覆蓋之該载體f 、、居緣政置施加至 -連接裝置,·將被圖案面’刪除該切口中至少 被圖案化抗銲阻劑裝置施絕緣裝置;將 被圖案化焊接球施加至不被該被=化重繞袭置;及將 之區域。 圖案化抗銲阻劑裝置覆蓋 此例優點為重繞或部件尚未必 、自開知被提供於基板 第δ頁 200425361 五、發明說明(3) 或載體裝置。此外,扇出設計可行,也就是突出於晶片邊 緣之重繞。再者,載體裝置尺寸可大於如具積體重繞層之 傳統基板。特別是,該尺寸亦大於晶圓面積,係因即使成 本低廉’ 6 0 0公厘X 4 0 0公厘之面板尺寸亦可被實施。再 者,該載體裝置或面板不必如晶圓般圓,而亦可以順應晶 片幾何方式被形成矩形。 除了這些直接節約成本優點外,本發明亦提供更大自 由選擇可用物質之優點,因為載體裝置總體並不限於制式 晶片’所以亦可製造具不同型式及尺寸之積體電路或晶片 之俗稱多晶片模組之多晶片單元,並可於處理完成後做類 似已知之晶圓位準測試(WLT )及晶圓位準内建(WLB I )多晶 粒測試及燒入。 本發明各主題之具優點發展及改善係被發掘於申請專 利範圍子項中。 依據一較佳發展,載體裝置係為至少一切口被呈現或 隨後製造其中之印出孔型式之薄膜。 依據進一步較佳發展,黏著劑係於施加積體電路之前 被施加至載體裝置。 依據進一步較佳發展,載體裝置係被嵌入如框之嵌入 裝置。 依據進步較佳發展,複數個積體電路係藉由如取置 工具之置放裝置被施加至載體裝置。 尽n a步較佳發展,保護裝置係被施加至載體裝置 至、一被施加積體電路之上。
200425361 五、發明說明(4) 依據進一 印刷處理或灌 依據進一 依據進一步較 或製造。 依據進一 步驟被施加至 置;施加及圖 屬化於不被該 移除該幕罩; 化。 依據進一 幕罩被光微影 或該載體金屬 依據進一 依據進一 依據進一 式被施加且隨 依據進一 係於施加焊接 依據進一 置積體電路係 依據進一 晶片邊緣上之 步較佳發展,保護裝置係以射出成型方法之 注處理被施加於及/或被隨後硬化。 步較佳發展,聚合物係被施加為絕緣裝置。 佳發展,該絕緣裝置係以光微影處理來印刷 步較佳發展,被圖案化重繞裝置係藉由以下 該絕緣裝置:施加載體金屬化至該絕緣裝 案化幕罩於該載體金屬化;施加導體軌道金 被圖案化幕罩覆盖之該載體金屬化區域中; 及依據該導體轨道金屬化圖案化該載體金屬 步較佳發展,該載體金屬化係被濺鍍及/或 圖案化及/或導體軌道金屬化被化學電鍍及/ 化被以蝕刻步驟圖案化。 步較佳發展,抗銲阻劑裝置係具有聚合物。 步較佳發展,抗銲阻劑裝置係被印刷。 步較佳發展,焊接球係以印刷處理圖案化型 後被融化,較佳於爐中而形成焊接球。 步較佳發展’載體裝置上之複數個積體電路 球後被分為個別積體電路或積體電路群組。 步較佳發展’載體裝置上之複數個具重繞裝 於分隔之前進行功能性測試。 步較佳發展’被圖案化重繞裝置係以其外延 方式來圖案化。
200425361 五、發明說明(5) 依據進一步較佳發展,較佳具有不同個別積體電路之 多晶片模組係被形成。 本發明實施例係被描繪於圖示中且被更詳細解釋於以 下g兄明。 圖中,相同參考符號係代表相同或功能性相同組成部 件。 第一圖描繪被提供垂直連續切口 11之載體裝置1 〇。例 如’載體裝置1 〇或基板為薄膜或撓性基板,切口 n係以如 模壓孔型式出現。 依據第二圖,具有在此被提供切口 11之載體裝置10係 被&供黏著劑1 2於頂側且被嵌入框1 3。該框1 3可具有圓及 角形’且其尺寸僅藉由如光微影技術之後續處理步驟要求 來限制。特別是,載體裝置1 〇之尺寸可延伸至晶圓尺寸 ( 200公厘,300公厘),但亦超過此。 依據第二圖之後縯處理步驟中,積體電路1 4係以如積 體電路14之接觸墊片之接觸裝置15被放置於切口 u區域中 之方式被施加及被顛倒放置於黏著劑丨2被施加之載體裝置 1 0上。此例中’積體電路1 4間之距離或切口 11間之距離係 較佳以後續被創造於不被提供黏著劑12之基板薄膜1〇或載 體裝置側面之重繞層可被側面導引晶片邊緣上之方式被選 擇。積體電路14可藉由如取置工具之置放裝置來施加及放 置。 依據第四圖’為了保瘦積體電路1 4,保護裝置1 6係車六 佳被提供於積體電路1 4遠離接觸墊片丨5之側面上。因此^
五、發明說明(6) 若製造重繞裝置之前,白 、 1 4之全部晶片組件適當二載體裝置1 0上 刷方法被提供保護裝置^射出成型方法 果,可獲得類似晶圓之:質=護裝置隨 第五圖顯示施加絕姑 刀 載體裝置10側面上之後之ς置17於不被提 加於載體裝置切口丨丨中 四圖裝置,無 被施加。 <、、邑緣裝置17係被光 依據第六圖,重络胜 17上。重繞裝置18 :=古19係被施 及電子絕緣區段19,導電區段18 ^ ^ ^ 等體轨道區段18被至 =墊片15。、重繞裝置18,”之重繞金 幸化莫罢^賤錄載一體金屬化至絕緣裝置1 7 ; 铲詩* ®無圖示);1化學沉積導體執道 屬化之未被幕罩覆蓋區域;及以 、_、’屬化為導體執道金屬化丨8。此外 可被側面,供於導體轨道區段18之間。因 1 8,1 9可藉由薄膜或印刷技 提供積體電路14之基板薄膜該側匕載 ^ 進步方法步驟之後,依據第七圖, 係於印刷處理中以圖案化型式被施加至重 較佳包含聚合物之該抗銲阻劑裝置2〇係以 兀哀置18,19之導體執道金屬化丨8之預定 複數個積體電路 或另外灌注或印 後被硬化。結 供積體電路1 4之 絕緣裝置1 7被施 觸墊片〔原文如 微影或印刷方法 加於該絕 或導體執 少部份接 屬化係較 施加及光 金屬化1 8 該法餘刻 ,非電導 此,重繞 體裝置10 緣裝置 道區段 觸連接 佳被形 微影圖 於被濺 被圖案 物質19 裝置 或不被 抗銲阻劑裝置2〇 繞裝置1 8,1 9。 切口被提供於重 區段21上之方式
第12頁 200425361 五、發明説明(7) 被圖案化 依據第八圖,銲接球2 2係較佳以印刷處理被施加於導 體執道金屬化18之預定區段21上之抗銲阻劑裝置20中之切 口 2 1 〇 依據第九圖裝置中,這些銲接球22係較佳被融化於逆 流爐中,且隨後被冷卻形成銲接球2 2,。 遵 分為具 依 造之分 板,也 成本來 使用晶 繞裝置 雖 不限於 因 再者, 照第十圖,包含複數個積體電 扇出重 據第十 離積體 就是具 製造之 圓位準 積體電 然本發 此而可 此,特 重繞裝 繞裝置18,19,20之分離積體 一圖裝置中,係詳細顯示依據 電路23。然而,藉由所述程序 有重繞層例方式,可以高度平 重繞技術係被提供。依據本發 封裝技術處理,扇出設計現在 路2 3係較佳被擠型器分隔。 明已在較佳實施例基礎上作以 以多樣修改。 別是已解釋物質(聚合物···)係 置18,19,20,22亦可以替代 οα r\ 電路23 本發明 之類似 行化且 明之此 亦可行 上說明 被视為 方式來 分係被 〇 方法製 預製基 可節約 技術係 。具重 ,但並 例證。製造。
第13頁 200425361 圖式簡單說明 第一至十圖顯示具重繞裝置積體電路製程中之各階段以解 釋本發明實施例之橫斷面圖。 第十一圖顯示具重繞裝置積體電路以放大圖示解釋本發明 實施例之橫斷面圖。 元件符號說明: 10 載 體 裝 置 11 切 V 12 黏 著 劑 13 框 14 積 體 電 路 15 連 接 裝 置 16 保 護 裝 置 17 絕 緣 裝 置 18 傳 導 裝 置 19 非 傳 導 裝置 20 抗 銲 阻 劑裝置 21 區 段/切口 22 、22 , 焊接球 23 分 離 積 體電路
第14頁

Claims (1)

  1. 200425361 六、申請專利範圍 _ ' 1· 一種具重繞裝置(18,19)積體電路(23)之製造方法, 具有以下步驟: 提供具預定或隨後圖案化切口(Π)之載體裝置(1〇); 以該載體裝置(1〇)之該預定切口(11)被放置該積體電 路(14)至少一連接裝置(15)上之方式將至少一該積體電路 (1 4 )顛倒施加至該載體裝置(1 〇 ); 將絕緣裝置(1 7)施加至不被該積體電路(丨4)覆蓋之該 載體裝置(1 〇 )側面,刪除該切口(丨丨)中該至 (15) ; 〇文衣罝 (1 了)將該被圖案化重繞裝置(18,19)施加至該絕緣裝置 裝置(Π1化:銲阻劑裝置(2°)施加至該被圖案化重繞 劑裝H圖)ί ΐ : ί球(22)施加至不被該被圖案化抗銲阻 、 )覆盍之5亥重繞裝置(18)之區段(21)。 Π申請專利範圍第丨項之該方法,其特 (1 0 )係為其中至少_ ΐ77。r Ί^ σ π Α戴體裝置 3如φ上主奎4丨#閣 (1 )被呈現P出孔型式之薄膜0 .如申凊專利範圍第⑷項之該方法 (1 2 )係於施加該積體電 U為黏者劑 (10) 〇 積體電路(14)之刖被施加至該載體裝置 4壯如先前申請專利範圍任一項之該方法,其 裝置(1 〇)係被嵌入如框之嵌入裝置(丨3)。、"為该載體 5.如先前申請專利範圍任一項之該方法 積體電路(丨4)係藉由如取置工具之置放裝置=f為複數個 夂她加至該載
    第15頁 200425361
    六、申請專利範圍 體裝置(10)。 6.如先前申請專利範圍任— 置(1 6 )係被施加至該載體 ' =/ ,/、特徵為保護裝 電路U4)之上。戰體裝置(1°)及被施加之至少一積體 7·如申請專利範圍第6項之該方法,豆 (16)係以射出成型方法或 ,、寺政為該保護裝置 或隨後部份或全部被硬化。卜瞿,主或印刷處理被施加及/ 其特徵為聚合物 其' 特徵為該絕緣 其特徵為該被 L如先前申請專利範圍任一項之該方法 係被施加為該絕緣裝置(丨7 )。 '
    9. 如先前申請專利範圍任—項之該方法, 裝置(1 7)係以光微影處理來印刷或製造: 10. 如先前申請專利範圍任—項之該方法,農 圖案化重繞裝置(18,19)係藉由以下牛驟、特徵為該被 裝置(i 7) : 乂下乂驟被施加至該絕緣 施加載體金屬化至該絕緣裝置(17); 施加及圖案化幕罩於該載體金屬化; 施加導體軌道金屬化於不被該被圖案化 載體金屬化區域中; ’早復盖之只 移除該幕罩;及
    依據該導體執道金屬化結構圖案化該載體金屬化。 11 ·如申請專利範圍第1 〇項之該方法,其特徵為該載體金 屬化係被賤鍍及/或幕罩被光微影圖案化及/或導體執道金 屬化(1 8)被化學電鍍及/或該載體金屬化被以蝕刻步驟圖 案化。
    第16頁 200425361 六、申請專利範圍 其特徵為該抗 其特徵為該抗 1 2 ·如先前申請專利範圍任一項之該方法 銲阻劑裝置(20)係具有聚合物。 1 3 ·如先前申請專利範圍任一項之該方法 銲阻劑裝置(2 0 )係被印刷。 1 4·如先前申請專利範圍任一項之該方法,其特徵為該焊 接球(22)係以印刷處理圖案化型式被施加且隨後被融^匕 較佳於逆流爐中。 15.如先前申請專利範圍任一項之該方法,其特徵為該載 體裝置(1 0 )上之複數個積體電路(i 4)係於施加該焊接球 (22)後被分為個別積體電路(23)或積體電路群組(24)。 16·如申請專利範圍第15項之該方法,其特徵為該載體裝 置(ίο)上之複數個具重繞裝置(18,i9)積體電路(14,^) 係於分隔之前進行功能性測試。 17·如先前申請專利範圍任一項之該方法,其特徵為該被 圖案化重繞裝置(18,19)係以其侧向延伸超出該積體電路 (14)之方式來圖案化。 18.如先前申請專利範圍任一項之該方法,其特徵為較佳 具有不同個別積體電路之多晶片模組係被形成。 19· 一種具重繞裝置(18,19)積體電路(23),具有: 具預定或隨後圖案化切口(11)之載體裝置(1〇); 以該載體裝置(10)之該預定切口(11)被放置該積體電 路(14)至少一連接裝置(15)上之方式顛倒於該載體穿 (10)之至少一該積體電路(14); 载裝置 不被該積體電路(1 4 )覆蓋之該載體裝置(i 〇 )側面上之
    200425361 六、申請專利範圍 絕緣裝置(1 7 ) (15); 刪除該切口( 1 1 )中該至少一連接裝置 该絕緣裝置(1 7)上之該被圖案化重繞裝置(1 8,1 9 ); 該被圖案化重繞裝置(1 8,;1 9 )上之被圖案化抗銲阻劑 裝置(20);及 不被該被圖案化抗銲阻劑裝置(2 〇 )覆蓋之該重繞裝置 (18)之區段(21)上之焊接球(22)。 、
    第18頁
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