TW200414501A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW200414501A
TW200414501A TW092136441A TW92136441A TW200414501A TW 200414501 A TW200414501 A TW 200414501A TW 092136441 A TW092136441 A TW 092136441A TW 92136441 A TW92136441 A TW 92136441A TW 200414501 A TW200414501 A TW 200414501A
Authority
TW
Taiwan
Prior art keywords
pads
semiconductor device
wafer
data input
output
Prior art date
Application number
TW092136441A
Other languages
English (en)
Inventor
Sadayuki Morita
Yoshikazu Saito
Original Assignee
Renesas Tech Corp
Hitachi Ulsi Sys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp, Hitachi Ulsi Sys Co Ltd filed Critical Renesas Tech Corp
Publication of TW200414501A publication Critical patent/TW200414501A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; CARE OF BIRDS, FISHES, INSECTS; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K13/00—Devices for grooming or caring of animals, e.g. curry-combs; Fetlock rings; Tail-holders; Devices for preventing crib-biting; Washing devices; Protection against weather conditions or insects
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; CARE OF BIRDS, FISHES, INSECTS; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K29/00—Other apparatus for animal husbandry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/20—Clinical contact thermometers for use with humans or animals
    • G01K13/25—Protective devices therefor, e.g. sleeves preventing contamination
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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Description

200414501 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於半導體裝置，特別是關於在一個封裝體 搭載複數片半導體晶片的多晶片封裝體的半導體裝置。具 體上是關於，堆疊複數個SRAM( Static Random Ac eess Memory)等之記憶器，或與系統LSI組合層積的技術。 【先前技術】 隨著電子機器的高性能化、大容量化，在一個半導體 封裝體內配設複數片半導體晶片，高密度安裝的多晶片封 裝體（MCP)技術的開發正在快速進展。如此安裝複數片晶 片的技術，其具體方法有：在一片基板成平面狀排列複數 片晶片的方法；及將複數片晶片層積狀堆疊的方法。後者 的堆疊MCP的技術是，在線焊接設於要層積的晶片四邊 的晶片端子或焊墊時，使用間隔片等使要層積的晶片相互 間在高度方向也有一些寬度。同時也揭示，將焊墊配置在 晶片的相鄰接的兩邊，以堆疊複數片該晶片的技術（參照 ，例如，專利文獻1、專利文獻2)。 【專利文獻1】 特開平4 - 1 995 6 6號公報（第1圖） 【專利文獻2】 特開2001 - 196526號公報（第2圖） 本案發明人等在本案之前，爲了回應記憶器大容量化 的需求，注意到應該考量下述各點。亦即’在傳統的 SRAM晶片，因爲晶片上的焊墊是配置在晶片的相對向的 兩邊，因此在堆疊時，必須使用間隔片等使其有—S ® g -5- (2) (2)200414501 ，以確保焊接所需要的高度。因此，封裝體尺寸變大，能 堆疊的數目受到限制。 同時，要在一片晶片上搭載CPU、邏輯電路等的系統 LSI，附加大容量的SRAM晶片時，爲了提高系統LSI的 功能，而要將大容量的SRAM，跟搭載有CPU、邏輯電路 等的系統LSI晶片一起搭載在一片晶片上時’因SRAM晶 片的尺寸較其他晶片大，會招致晶片尺寸的增大。這會連 帶使封裝體尺寸的增大，造成起因於SRAM晶片的產能的 降低。而且，較之SRAM處理程序，系統LSI用處理程序 的配線基本上是多層配線，因此形成在SRAM上的配線層 將成無用之物。 如果改變方式，將SRAM晶片與系統LSI晶片分開， 而將兩晶片層積，因涉及傳統的SRAM晶片的大小或焊接 墊的配置位置，有時會發生無法堆疊的情事。 爲了解決這個問題，如上述專利文獻，將焊墊配置在 相鄰接的兩邊，將層積的晶片斜方向錯開搭載，便可以使 焊接較容易。 但是，使用上述專利文獻所揭示的技術，將SRAM晶 片相互層積時，本發明人等發覺到，有必要考慮位址焊墊 或資料輸入輸出用焊墊的配置位置。而且，考量低成本或 方便性，有必要考慮SRAM封裝體的焊墊位置，使其能夠 將SRAM堆疊在現用的SRAM封裝體。同時，將SRAM 晶片與系統L SI晶片堆疊時，也有必要適當安排焊墊位置 ，使堆疊較爲容易。 -6 - (3) (3)200414501 【發明內容】 本發明是有鑑於上述問題點而完成者，其目的在提供 ’能夠很容易層積系統LSI與SRAM，或使SRAM晶片間 的相互層積較容易的SRAM晶片。 本發明的上述及其他目的以及新穎的特徵，可以從本 說明書的記述及附圖獲得進一步的瞭解。 簡單說明本案所揭示的發明中，具代表性者的槪要如 下。 亦即’一種在具有四邊的半導體晶片上形成有：電路 方塊；從外部向上述電路方塊供應規定的位址信號的複數 個位址焊墊；及對上述電路方塊輸入或輸出資料的複數個 資料輸入輸出用焊墊的半導體裝置，上述複數個資料輸入 輸出用焊墊是，沿半導體晶片的第i邊配置，上述複數個 位址焊墊是，沿跟上述第1邊共有上述半導體晶片的一個 角的第2邊配置，上述第2邊不配置上述資料輸入輸出用焊 塾 〇 【實施方式】 〈實施例1 > 第1圖表示從上面所視的，本案發明第1實施例的半導 體晶片1 0中，堆疊複數片同一種類的晶片，錯開層積使其 不會與後述的層積有焊接墊的其他晶片重疊，搭載於T S 0 型的封裝體2的半導體裝置1，第2圖表示從下面看第i圖的 半導體裝置1，第3圖是沿第1圖的半導體裝置的A - A，面 (4) (4)200414501 的截面，以模式方式所示的截面圖。 在第1圖，半導體晶片10堆疊多片，該半導體晶片的 共有1個角.的兩邊配置有輸入輸出外部的信號用的焊接墊 3 〇，分別面向上述兩邊的邊不配置焊接墊。同時，如後述 ，焊接墊是在一邊配置位址焊墊，在另一邊配置資料輸入 輸出用焊墊，配置位址焊墊的一邊不設資料輸入輸出用焊 墊，配置資料輸入輸出用焊墊的一邊不設位址焊墊。同時 ，層積的各晶片的焊墊是，例如使用A II細線等的焊接線 1 1，將晶片的焊墊相互連接，然後，半導體裝置則以環氧 樹脂等加以封裝。層積在最下面的晶片的焊墊是經由焊接 線11，連接在半導體封裝體的端子12。半導體晶片是用黏 接帶TP連接在端子12，端子12則與可以使半導體晶片與 外部連接的外部端子連接，此外部端子配置有：位址端子 A0〜A22、/ UB、/ LB、寫入起動信號/ WE、/ OE、晶 片選擇信號051、/031、€32、/032等使半導體晶片上 的電路方塊動作的控制信號端子、資料輸入輸出用端子 DQ0〜DQ15供應電源用的VCC電源端子、VSS接地電位 用端子等。 雖不特別限定，但本實施例是將連接焊接墊的外部引 線端子配置在半導體封裝體的相對向的兩邊（短邊），其中 的一邊順序排列有 A 1〜A 7、A 1 8、A 1 9、/ L B、/ U B、 A22' CS2、/ WE、A21、A20、A8 〜A15，位址端子配置 在兩端側，控制信號端子配置在中央部。另一方面，雖不 特別限定，另一邊也順序排列有：AO、/ CS1、VSS、/ 200414501 (5) OE、DQO、DQ8、DQ1、DQ9、DQ2、DQ10、DQ3 、VCC、DQ4、DQ12、DQ5、DQ13、DQ6、DQ14、 DQ15、VSS、A16、A17，在邊端配置位址端子， 號端子或接地電位端子，並由其所夾，配置資料輸 用端子或電源端子。而，封裝體的長邊是配置成與 長邊方向同方向，配置資料輸入輸出用焊墊的邊與 的短邊平行，配置位址焊墊的邊與封裝體的長邊平 在第2圖，配置在半導體封裝體的相對向兩邊 端子中，配置資料輸入輸出用端子的邊的端子中 AO、A16、A17以外，亦即位址端子以外，是以不 導體晶片狀延伸。另一方面，面對配置AO、A 1 6、 及資料輸入輸出端子的邊的邊的端子，則以橫越半 片狀延伸。 第3圖表示，在TSOP型的封裝體的晶片搭載 置端子12，在其上面堆疊複數片本案的SRAM晶片 面圖。被堆疊的晶片的焊墊由焊接線1 1加以連接， ，亦即夾著黏接帶TP裝設在封裝體的引線框架的 焊墊，由焊接線連接在端子1 2。 本案的SRAM晶片是在相鄰接的兩邊配置焊墊 一邊配置位址焊墊，在另一邊配置資料輸入輸出用 藉此，可以不必改變現用的SRAM晶片的插腳位置 以搭載層積的複數片SRAM晶片。這時，搭載的 晶片也是在其一邊設位址焊墊，在另一邊設資料輸 用焊墊，配置位址焊墊的邊不設資料輸入輸出用焊 、DQ 1 1 DQ7、 控制信 入輸出 晶片的 封裝體 行。 的外部 ，除了 橫越半 A1 7、 導體晶 基板配 10的截 最下層 晶片的 ，在其 焊墊， ，便可 SRAM 入輸出 墊，便 -9 - (6) (6)200414501 可以取得封裝體端子與晶片焊墊的匹配性。同時，搭載複 數片同一 S R A Μ晶片時，將晶片斜方向錯開搭載，便可以 不必附設間隔片，能達成低成本化。同時，由於沒有間隔 片’層積的晶片的高度方向不受限制，可以堆疊很多片晶 片。 第4圖表示第1圖所示本案的SRAM晶片的布置的槪 要圖。在該圖表示，構成應用本發明的SRAM的電路方塊 中的主要者，這些可以藉由習知的半導體積體電路的製造 技術，形成在如單晶矽的1個半導體基板上。 雖不特別限定，該圖是將半導體晶片1 0十字狀分成長 邊方向及短邊方向，在各該領域配置複數個記憶器陣列 MA。在記憶器陣列MA的周邊配置：主字元驅動電路 MWD、感測放大器S a、X解碼器XDEC、Y解碼器YDEC 、輸入電路1C、輸出電路OC、電源電路行系救濟溶絲 XFUSE、列系救濟溶絲YFUSE等的周邊電路。記憶器陣 列MA與周邊電路的外側，於半導體晶片的邊配置測試用 的焊墊TEST或焊接墊。 在記憶器陣列MA配置有：複數條字元線WL、複數 條資料線DL、配置在字元線與資料線的交點的記憶單元 MC，第4圖以其中的1條字元線、1條資料線、及丨個記憶 單兀MC來代表。雖不特別限定，但記憶單元MC是由： 一對CMOS反相器的輸入與輸出相互連接而構成的正反器 (具有兩個p通道型負載MOS電晶體與兩個n通道型驅動 MOS電晶體）；將上述正反器的兩個記憶節點選擇性連接 -10- (7) (7)200414501 到資料線的兩個η通道型轉送Μ Ο S電晶體，所構成。η 通道型MOS電晶體的閘電極連接字元線。字元線WL連 接在供應字元線的驅動電壓的副字元驅動電路SWD，副 字元驅動電路連接在選擇性驅動該等的主字元驅動電路 MWD。 配置在半導體晶片的相鄰接的兩邊的焊接墊是由，接 收位址信號的輸入的位址焊墊A ’ 0〜A ’ 2 2 ;接收控制信 號的輸入的控制信號焊墊；輸入輸出記憶單元的資料的資 料輸入輸出用焊墊D Q ’ 0〜D Q ’ 1 5 ;供應電源電壓或接地 電位用電源焊墊VCC’、接地電位用焊墊VSS’；輸入輸出 資料用的輸入輸出緩衝器（緩衝電路）3 6，所構成。此 SRAM進行從記憶單元MC讀出資訊或寫入時，從外部輸 入位址信號，生成列位址信號、行位址信號，分別輸入未 圖示的列位址緩衝電路、行位址緩衝電路，經由列解碼器 、行解碼器選擇記憶器陣列MA內的任意的記憶單元。而 ，輸入輸出資料在寫入動作時經由輸入輸出緩衝電路3 6輸 入，讀出動作時經由感測放大器SA、輸入輸出緩衝電路 36輸出。 在配置位址焊墊的長邊，成焊墊列配置位址焊墊與控 制信號焊墊，並考慮信號的流動方向，配置在與字元線垂 直的方向。另一方面，在配置資料輸入輸出甩焊墊的短邊 ，除了輸入輸出焊墊以外配置有電源焊墊或接地電位焊墊 等，配置在垂直於資料線的方向。同時，由配置焊墊的邊 所夾的角是不配置焊墊。這時，從角偶至焊墊的距離最好 -11 - (8) (8)200414501 是，焊墊的最小間距有輸出緩衝電路的布置寬度以上的間 距。 同時，在上述半導體晶片設有用以監視內部電壓、取 出內部電路方塊的中間信號，分析不良原因等的測試用焊 墊。此等測試用焊墊是藉由探針從晶片取出信號，不會被 焊接。本實施例是在面對配置位址焊墊與資料輸入輸出用 焊墊的邊的兩邊分別具備有測試用焊墊，但不限定如此， 可以依測試用焊墊的數目適度配置。 在本案的 SRAM，因爲配置位址焊墊的邊與資料線， 及配置資料輸入輸出用焊墊的邊與字元線分別成平行，因 此，沿著信號的流向配置焊墊，避免配線複雜化。同時， 將數目較資料輸入輸出用焊墊多的位址焊墊配置在半導體 晶片的長邊，因此，可以緩和配置焊墊的間距。而且，在 配置位址焊墊的邊的中央部配置輸入控制信號的焊墊，在 配置資料輸入輸出用焊墊的邊的端部配置控制信號焊墊與 接地電位焊墊，中央部配置電源焊墊，使其成爲跟上述 TSOP型的封裝體的匹配性良好的焊墊配置，藉此可以很 容易焊接端子與焊墊，同時，可以使用現有的SRAM封裝 體。除此之外，設有禁止配置焊墊領域，而從離開晶片角 部規定距離以上的部位配置焊墊，藉此使其較容易焊接。 再者，本實施例是在半導體晶片的長邊配置位址焊墊 ，在短邊配置資料輸入輸出用焊墊，但也可以在短邊配置 位址焊墊，在長邊配置資料輸入輸出用焊墊。同時，通常 是位址焊墊較資料輸入輸出用焊墊多，但如果無法在長邊 -12· (9) (9)200414501 或短邊完全配置位址焊墊時，也可以將位址焊墊配置在， 鄰接於配置資料輸入輸出用焊墊的另一邊。這時，配置資 料輸入輸出用焊墊的邊，資料輸入輸出用焊墊要成一群配 置，同時，位址焊墊也是要相互鄰接成一群配置，如此便 可以很容易搭機於現有的SRAM封裝體。而且，本實施例 是將焊墊列配置成一列，但也可以配置成兩列，交互交錯 配置成兩列也可以。 〈實施例2〉 第5圖係從上方所視的堆疊複數片本案第2實施例的半 導體 10，而搭載於 BGA(Boll Grid Array)型的 CSP(Chip Scale Package)的半導體裝置1的圖，第6圖係表示第5圖的 半導體裝置1的配線基板。第5圖是堆疊複數片與第4圖所 示的SRAM相同架構者，晶片的焊墊相互間用例如A u細 線等的焊接線1 1焊接。配置在封裝體的最下層的SRAM晶 片的焊墊，使用焊接線1 1焊接在封裝體的內部端子5 5〜 5 9 ’而用樹脂等加以封裝。封裝體的內部端子是由··位址 內部端子55、控制信號內部端子56、資料輸出輸入用端子 57、接地電位端子58、電源端子59所構成，雖不特別限定 ’但此等內部端子是配置在封裝體的相鄰接兩邊。其中的 一邊是在兩端排列位址內部端子，在中央部排列控制信號 內部端子’在另一邊的端部配置控制信號內部端子、接地 電位端子，在其所夾的部位配置資料輸出輸入端子與電源 端子。 -13- (10) (10)200414501 第6圖表示，從內部端子延伸的基板上部的配線5 2通 過通孔54，經過基板下部的配線60連接在焊錫球53，或從 通孔5 4直接連接在焊錫球5 3的情形。焊錫球5 3是排列成 GA(grid array)狀，各焊錫球具有對應內部端子的位址端 子、控制信號端子、資料輸入輸出用端子、接地電位端子 、電源端子的功能。 本實施例除了第1實施例所記載的效果之外，因爲在 封裝體的相鄰接兩邊設內部端子，因此可以很容易焊接本 案的晶片。同時，因爲將本案的SRAM搭載於BGA型的 CSP封裝體，因此可以將大容量的SRAM搭載於小且薄型 的封裝體。 〈實施例3〉 第7圖至第10圖表示將第3圖所示SRAM晶片13與系統 LSI 14晶片層積時的本案第3實施例。本實施例在第7圖表 示SRAM晶片較系統LSI晶片大時，第8圖表示SRAM晶 片與系統LSI晶片差不多同一大小時，第9圖表示SRAM 晶片較系統LSI晶片小時的情形。雖不特別限定，但系統 LSI晶片14是由：CPU 61、記憶器62、邏輯電路63、 CACHE用RAM 64、介面電路65等複數個電路方塊所構成 ，該等是由內部匯流排66連接在一起。在系統LSI晶片的 4邊配置與外部進行信號的輸入輸出的焊墊。配置在系統 LSI晶片的4邊的焊墊中，接在配置SRAM晶片13的焊墊 的兩邊的邊的焊墊’是藉由焊接線連接在SRAM晶片的焊 -14· (11) 200414501 墊。在層積的SRAM晶片與系統LSI晶片爲了設 SRAM晶片、系統LSI晶片均在鄰接的兩邊設有 焊墊，同時，對準兩晶片的相鄰接的兩邊分別共 而將兩片堆疊在一起。 第10圖表示本實施例的系統LSI與SRAM的 的槪略圖。從 CPU、ROM、LOGIC、CACHE 輸 信號或資料信號分別經由內部位址匯流排72、資 73輸入介面電路MCTL。輸入MCTL的信號經由 排72、資料匯流排73，輸入本案的SRAM。另一 SRAM輸出的資料信號則通過上述位址匯流排72 流排73輸入 MCTL，經由資料匯流排分別輸入 LOGIC等。本電路方塊圖中，有關CPU、ROM、 CACHE的部分是在上述的系統LSI晶片上進行 則在本案的SRAM晶片上進行。MCTL則由系統 與SRAM晶片雙方所具備。 本實施例是在搭載大容量SRAM的系統LSI 夠容易層積CPU、LOGIC、ROM等，而將大容. 晶片的焊接墊配置在相鄰接的兩邊，在其一邊配 墊，$另一邊配置資料輸入輸出用焊墊。如此， 數個CPU、LOGIC、CACHE、SRAM晶片等的系 想辦法安排焊接墊的配置位置的自由度較其他E SRAM晶片的焊墊配置位置，堆疊會比較容易。 如本實施例，在記憶晶片的相鄰接的兩邊中 置位址焊墊，在另一邊配置資料輸入輸出用焊墊 置介面， 介面用的 有的角， 電路方塊 出的位址 料匯流排 位址匯流 方面，從 、資料匯 ROM、 LOGIC、 :，SRAM L S I晶片 ，爲了能 量 SRAM 置位址焊 在搭載複 統 LSI， 晶片局的 的一邊配 ，而層積 -15- (12) (12)200414501 在系統L S I晶片’則不論邏輯晶片與記憶晶片的大小如何 ’均可容易層積，焊接。同時，在邏輯晶片與記憶晶片的 相鄰接的兩邊設置介面用的焊墊或緩衝電路，將與記憶晶 片的焊接墊連接的邏輯晶片的焊接墊，配置在共有邏輯晶 片的一個角的兩邊，使焊接或層積較容易。同時，如上述 ，在SRAM晶片的有焊墊的邊所夾的角設禁止配置焊墊領 域，便可以在如第7圖所示，系統 L SI晶片的焊墊較 SRAM晶片的焊墊小時，也能夠很容易焊接兩片晶片。 以上，依據發明的實施形態具體說明本發明人所完成 的發明，但本發明並非限定如上述實施形態，當然可以在 不脫離其主旨之範圍內作各種變更。 例如，本實施例係在SRAM晶片的相鄰接的兩邊具備 焊接墊，在一邊配置位址焊墊，在另一邊配置資料輸入輸 出用焊墊，但也能夠以 DRAM、SSRAM、SDRAM取代 SRAM，特別是，也能夠以通常於晶片4邊配置焊接墊的快 閃記憶器等其他記憶晶片來取代。同時，也可以將DRAM 相互堆疊，或SRAM與DRAM堆疊，取代SRAM相互間 堆疊。同時，搭載於系統LSI的記億器是SRAM，但搭載 於系統LSI的記憶器也可以不限定爲SRAM，也可以用其 他記憶晶片。同時，堆疊的晶片數在堆疊系統LSI與 SRAM時是兩層，SRAM相互堆疊時是也是兩層，但堆疊 安裝用半導體裝置可以是較兩層多的多層架構。 而且，本案是說明的堆疊 SRAM的封裝體，是以 TSOP型與BGA型的封裝體爲例子進行說明，但也可以搭 •16- (13) (13)200414501 載於QFP等的各種封裝體。 兹簡單說明，從本案所揭示的發明中具代表性者獲得 的效果如下。亦即，在層積複數片晶片的半導體裝置，因 爲在該晶片的相鄰接的兩邊配置焊接墊，在其一邊配置位 址焊墊’在其另一邊配置資料輸入輸出用焊墊，藉此可以 使層積晶片，及焊接很容易。 【圖式簡單說明】 第1圖係第1實施例之堆疊複數片本案的SRAM晶片， 將其安裝在 TSOP (Thin Small Outline Package)的上面圖 ο 第2圖係第1實施例之堆疊複數片本案的SRAM晶片， 將其安裝在TSOP的上面圖。 第3圖係第1實施例之堆疊複數片本案的S RAM晶片， 將其安裝在TSOP的截面圖。 第4圖係第1實施例之本案的SRAM晶片的槪要圖。 第5圖係第2實施例之堆疊複數片本案的SRAM晶片， 將其安裝在 CSP (Chip Scale Package)的上面圖。 第6圖係第2實施例之本案的CSP的基板配線的槪要 圖。 第7圖係令第3實施例之本案的SRAM晶片與較該 SRAM晶片小的系統LSI晶片層積的槪要圖。 第8圖係令第3實施例之本案的SRAM晶片與該SRAM 晶片差不多同一大小的系統LSI晶片層積的槪要圖。 -17- (14) 200414501 第9圖係令第3實施例之本案的SRAM晶片與較該 SRAM晶片大的系統LSI晶片層積的槪要圖。
SRAM晶片與系統LSI
第1 0圖係第3實施例之本案的 的電路塊的槪要圖。 [圖號說明] 1 :半導體裝置 2 :半導體封裝體 1 0、A、B :半導體晶片 1 1 :焊接線 12 :端子 13: SRAM 晶片 14 :系統LSI晶片 3 0 :焊接墊 3 6 :輸入輸出緩衝電路 5 1 :基板 5 2、6 0 :配線 5 3 :焊錫球配置位置 54 :通孔 5 5 :位址內部端子 5 6 :控制信號內部端子 5 7 :資料輸出輸入用端子 5 8 :接地電位端子 5 9 :電源端子 -18- (15)200414501 CS2 CS’2
61 : CPU
6 2 : 記憶、器 63 :邏輯） 64： CACHE 6 5 :介面電路-72 :位址匯流排 7 3 :資料匯流排 A0〜A22 :位址端子· A，0〜A，2 2 :位址焊墊- /UB、/ LB、/ WE、/ OE、CS1、/ CS1、CS2、/ :控制信號用端子 /UB，、/ LB，、/ WE，、/ OE，、CS，1、/ CS，1、 、/ C S ’ 2 :控制信號用焊墊 DQ0〜DQ15 :資料輸入輸出用端子 DQ’ 0〜DQ’ 15:資料輸入輸出用焊墊 VCC :電源端子 V C C，：電源焊墊） VSS :接地電位用端子 V S S，：接地電位用焊墊 TEST :測試用焊墊 TP :接合用黏接帶 MA :記憶器陣列 MWD :主字元驅動電路 SWD :副字元驅動電路
-19- (16)200414501
XDEC :列解碼器 YDEC :行解碼器 MWDEC:主字元驅動電路 I/OC:輸入輸出電路 XFUSE ： X救濟溶絲 YFUSE ： Y救濟溶絲 W L :字元線 DL :資料線 C C :控制電路 V C :電源電路 YS :行開關 SA :感測放大器
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Claims (1)

  1. (1) 200414501 拾、申請專利範圍 1. 一種半導體裝置，在具有四邊的半導體晶片上形成 有：電路方塊；從外部向上述電路方塊供應規定的位址信 號的複數個位址焊墊；及對上述電路方塊輸入或輸出資料 的複數個資料輸入輸出用焊墊，其特徵爲， 上述複數個資料輸入輸出用焊墊是，沿半導體晶片的 第1邊配置， 上述複數個位址焊墊中的至少一個是，沿跟上述第1 邊共有上述半導體晶片的一個角的第2邊配置， 在面向上述第1邊的第3邊，與面向上述第2邊的第4邊 ，不配置上述複數個位址焊墊，及上述複數個資料輸入輸 出用焊墊。 2. 如申請專利範圍第1項所述之半導體裝置，其中 藉由焊接輸入或輸出上述半導體晶片外部的信號用的 焊墊，不配置在上述第3邊及上述第4邊， 不焊接的內部電路測試用焊墊配置在上述第3邊及上 述第4邊。 3. 如申請專利範圍第1項所述之半導體裝置，其中 令上述電路方塊動作所需要的控制信號及供應電源用 的焊墊是，配置在上述第1邊或第2邊，或者上部第1及第2 邊 要 需 所 作 e,w> 3M3 塊 方 路 電 述 上 令 置 配 不 則 邊 4 第 及 3 第 述 上 中 其 置 裝 導 半 之 述 所 用第 源圍 電範 應利 供專 及請 號申 信如 制 4 控 的 墊 焊 -21 - (2) (2)200414501 上述第2邊不配置上述複數個資料輸入輸出用焊墊。 5 ·如申請專利範圍第4項所述之半導體裝置，其中 上述第1邊不配置上述複數個位址焊墊。 6. —種半導體裝置，具備有，包含第1及第2晶片的層 積的複數片晶片，其特徵爲， 上述第1晶片是四方形的晶片，具備有，包含複數個 第1位址焊墊，與複數個資料輸入輸出用焊墊的複數個焊 接墊， 上述複數個資料輸入輸出用焊墊配置在上述四邊形的 晶片的第1邊， 上述複數個第1位址焊墊配置在，與上述第1邊共有上 述四邊形晶片的一個角的第2邊， 上述第2邊不配置上述複數個資料輸入輸出用焊墊， 面向上述第1邊的第3邊，與面向上述第2邊的第4邊， 不配置藉由焊接輸入或輸出外部的信號用的焊墊。 7. 如申請專利範圍第6項所述之半導體裝置，其中 上述第1晶片進一步具有，配置在上述第1邊的複數個 第2位址焊墊， 上述複數個第2位址焊墊的數目，較上述複數個資料 輸入輸出用焊墊的數目少。 8. 如申請專利範圍第7項所述之半導體裝置，其中 在上述第1邊，上述複數個資料輸入輸出用焊墊是相 互鄰接配置成爲一群，同時，上述複數個位址焊墊是相S 鄰接配置成爲一群。 -22- (3) (3)200414501 9.如申請專利範圍第6項所述之半導體裝置，其中 上述第1邊不配置輸入位址信號用的焊接墊。 10如申請專利範圍第9項所述之半導體裝置，其中 上述第1晶片包含，具有設在複數條字元線與複數條 位元線的交點的複數個記憶單元的記億體陣列， 上述複數條資料線配置在與上述第2邊平行的方向。 1 1 .如申請專利範圍第1 〇項所述之半導體裝置，其中 上述第1晶片呈長方形， 上述第2邊是上述第1晶片的長邊 12. 如申請專利範圍第1 1項所述之半導體裝置，其中 上述複數個焊接墊進一步含有：向上述第1晶片輸入 控制信號的控制信號用焊墊；及向上述第1晶片供應規定 的電位的電源用焊墊， 上述控制信號用焊墊，與上述電源用焊墊，配置在上 述第1及第2邊，不配置在上述第3及第4邊。 13. —種半導體裝置，申請專利範圍第6項之半導體裝 置進一步具有· 搭載上述複數片晶片的封裝體， 上述封裝體具有，與上述複數個焊接墊連接的複數個 外部引線端子’ 上述複數個外部引線端子配置在上述封裝體的對向的 兩邊。 14. 如申請專利範圍第13項所述之半導體裝置，其中 配置上述複數個資料輸入輸出用焊墊的邊，與上述封 •23- (4) (4)200414501 裝體的短邊方向平行。 15.如申請專利範圍第14項所述之半導體裝置，其中 上述複數個外部引線端子配置在上述封裝體的短邊。 1 6 ·如申請專利範圍第1 5項所述之半導體裝置，其中 配置在上述短邊中的一邊的上述複數個外部引線端子 ’分別連接在上述複數個資料輸入輸出用焊墊， 配置在上述短邊中的另一邊的上述複數個外部引線端 子，不連接在上述複數個資料輸入輸出用焊墊。 17. —種半導體裝置，申請專利範圍第6項之半導體裝 置進一步具有： 包含搭載上述複數片晶片的基板的封裝體， 上述基板具有，與上述第1晶片的上述複數個焊接墊 連接的焊墊， 配置在上述基板的焊墊配置在上述封裝體的相鄰接的 兩邊。 18. 如申請專利範圍第17項所述之半導體裝置，其中 上述複數個資料輸入輸出用焊墊，與沿上述基板的第 1邊配設的複數個焊墊連接， 在上述基板的跟上述第1邊不同的另一邊，不配設與 上述複數個資料輸入輸出用焊墊連接的焊墊。 19. 如申請專利範圍第6項所述之半導體裝置，其中 上述複數片晶片是同種的晶片， 上述複數片晶片是分別錯開層積，使配置各晶片的上 述第1與第2邊的上述複數個焊接墊，不與層積的其他晶片 -24- (5) (5)200414501 重疊。 2〇. 一種半導體裝置，層積有包含’具有4邊的記憶晶 片，及具有4邊的邏輯晶片的複數片晶片，其特徵爲， 上述記憶晶片是四邊形的晶片’具備有：包含複數個 第1位址焊墊、及複數個資料輸入輸出用焊墊的複數個第】 焊接墊， 上述複數個資料輸入輸出用'焊墊配置在上述記憶晶片 的第1邊， 上述複數個第1位址焊墊配置在’與上述第1邊共有上 述四邊形的晶片的一個角的第2邊’ 上述第2邊不配置上述複數個資料輸入輸出用焊墊， 在面對上述第1邊的第3邊，及面對上述第2邊的上述 第4邊，不配置藉由焊接輸入或輸出外部的信號用的焊墊 ， 上述邏輯晶片是四邊形的晶片，4邊具有複數個第2焊 接塾， 配置於上述邏輯晶片上述複數個第2焊接墊中，與上 述記憶晶片連接的焊接墊，是配置在與上述邏輯晶片共有 〜個角的兩邊。 -25-
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