SU928412A1 - Матричный накопитель дл интегрального запоминающего устройства - Google Patents
Матричный накопитель дл интегрального запоминающего устройства Download PDFInfo
- Publication number
- SU928412A1 SU928412A1 SU762406945A SU2406945A SU928412A1 SU 928412 A1 SU928412 A1 SU 928412A1 SU 762406945 A SU762406945 A SU 762406945A SU 2406945 A SU2406945 A SU 2406945A SU 928412 A1 SU928412 A1 SU 928412A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- memory
- information
- tires
- sampling
- bus
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 6
- 238000005070 sampling Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- 230000036039 immunity Effects 0.000 claims 2
- 230000001186 cumulative effect Effects 0.000 claims 1
- 239000012634 fragment Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU762406945A SU928412A1 (ru) | 1976-09-30 | 1976-09-30 | Матричный накопитель дл интегрального запоминающего устройства |
| DE2739276A DE2739276C3 (de) | 1976-09-30 | 1977-08-31 | Integrierter dynamischer Halbleiterspeicher |
| JP10886877A JPS5352023A (en) | 1976-09-30 | 1977-09-12 | Semiconductor integrated circuit dynamic memory |
| NL7709976A NL7709976A (nl) | 1976-09-30 | 1977-09-12 | Dynamisch geintegreerd halfgeleider geheugen. |
| US05/835,664 US4133048A (en) | 1976-09-30 | 1977-09-22 | Integrated semiconductor dynamic memory |
| FR7728801A FR2366665A1 (fr) | 1976-09-30 | 1977-09-23 | Memoire dynamique a circuits integres a semi-conducteurs |
| DD7700201249A DD132744A1 (de) | 1976-09-30 | 1977-09-28 | Integrierter dynamischer halbleiterspeicher |
| GB40808/77A GB1552543A (en) | 1976-09-30 | 1977-09-30 | Integrated circuit semiconductor dynamic memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU762406945A SU928412A1 (ru) | 1976-09-30 | 1976-09-30 | Матричный накопитель дл интегрального запоминающего устройства |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU928412A1 true SU928412A1 (ru) | 1982-05-15 |
Family
ID=20677899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU762406945A SU928412A1 (ru) | 1976-09-30 | 1976-09-30 | Матричный накопитель дл интегрального запоминающего устройства |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4133048A (enrdf_load_stackoverflow) |
| JP (1) | JPS5352023A (enrdf_load_stackoverflow) |
| DD (1) | DD132744A1 (enrdf_load_stackoverflow) |
| DE (1) | DE2739276C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2366665A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1552543A (enrdf_load_stackoverflow) |
| NL (1) | NL7709976A (enrdf_load_stackoverflow) |
| SU (1) | SU928412A1 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2919166C2 (de) * | 1978-05-12 | 1986-01-02 | Nippon Electric Co., Ltd., Tokio/Tokyo | Speichervorrichtung |
| JPS58111183A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | ダイナミツクｒａｍ集積回路装置 |
| US4494220A (en) * | 1982-11-24 | 1985-01-15 | At&T Bell Laboratories | Folded bit line memory with one decoder per pair of spare rows |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3969706A (en) * | 1974-10-08 | 1976-07-13 | Mostek Corporation | Dynamic random access memory misfet integrated circuit |
| US4031522A (en) * | 1975-07-10 | 1977-06-21 | Burroughs Corporation | Ultra high sensitivity sense amplifier for memories employing single transistor cells |
-
1976
- 1976-09-30 SU SU762406945A patent/SU928412A1/ru active
-
1977
- 1977-08-31 DE DE2739276A patent/DE2739276C3/de not_active Expired
- 1977-09-12 JP JP10886877A patent/JPS5352023A/ja active Pending
- 1977-09-12 NL NL7709976A patent/NL7709976A/xx unknown
- 1977-09-22 US US05/835,664 patent/US4133048A/en not_active Expired - Lifetime
- 1977-09-23 FR FR7728801A patent/FR2366665A1/fr active Granted
- 1977-09-28 DD DD7700201249A patent/DD132744A1/xx unknown
- 1977-09-30 GB GB40808/77A patent/GB1552543A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DD132744A1 (de) | 1978-10-25 |
| FR2366665A1 (fr) | 1978-04-28 |
| DE2739276B2 (de) | 1979-10-11 |
| GB1552543A (en) | 1979-09-12 |
| JPS5352023A (en) | 1978-05-12 |
| US4133048A (en) | 1979-01-02 |
| DE2739276A1 (de) | 1978-04-06 |
| DE2739276C3 (de) | 1981-03-12 |
| NL7709976A (nl) | 1978-04-03 |
| FR2366665B1 (enrdf_load_stackoverflow) | 1979-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4476547A (en) | DRAM with interleaved folded bit lines | |
| US5058058A (en) | Structure for sense amplifier arrangement in semiconductor memory device | |
| US5292678A (en) | Forming a bit line configuration for semiconductor memory | |
| EP0031490B1 (en) | One device field effect transistor ac stable random access memory array | |
| KR920008397B1 (ko) | 반도체 집적회로 장치 | |
| US5815428A (en) | Semiconductor memory device having hierarchical bit line structure | |
| US4996168A (en) | Method for manufacturing P type semiconductor device employing diffusion of boron glass | |
| JP4015968B2 (ja) | 強誘電体メモリ | |
| KR900003939B1 (ko) | 반도체 메모리 장치 | |
| US5229314A (en) | Method of manufacturing field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulation | |
| SU928412A1 (ru) | Матричный накопитель дл интегрального запоминающего устройства | |
| US4922453A (en) | Bit line structure of dynamic type semiconductor memory device | |
| US4384347A (en) | Semiconductor memory device | |
| KR930009075A (ko) | 반도체 장치 및 그 제조방법 | |
| JPH0713864B2 (ja) | 半導体記憶装置 | |
| JPS596516B2 (ja) | 半導体記憶装置 | |
| US4984199A (en) | Semiconductor memory cells having common contact hole | |
| JPS596068B2 (ja) | 半導体メモリ装置 | |
| USRE32236E (en) | One device field effect transistor (FET) AC stable random access memory (RAM) array | |
| EP0169460A2 (en) | Dynamic memory array with segmented and quasi-folded bit lines | |
| JPH0821688B2 (ja) | 半導体メモリ装置 | |
| KR100763336B1 (ko) | 반도체 메모리 장치 및 이 장치의 메모리 셀 어레이의 배치방법 | |
| JPH06104401A (ja) | 半導体メモリ装置 | |
| US5157469A (en) | Field effect transistor having a multilayer interconnection layer therein with tapered sidewall insulators | |
| JPS6267857A (ja) | 半導体記憶装置 |