NL7709976A - Dynamisch geintegreerd halfgeleider geheugen. - Google Patents

Dynamisch geintegreerd halfgeleider geheugen.

Info

Publication number
NL7709976A
NL7709976A NL7709976A NL7709976A NL7709976A NL 7709976 A NL7709976 A NL 7709976A NL 7709976 A NL7709976 A NL 7709976A NL 7709976 A NL7709976 A NL 7709976A NL 7709976 A NL7709976 A NL 7709976A
Authority
NL
Netherlands
Prior art keywords
semiconductor memory
integrated semiconductor
dynamically integrated
dynamically
memory
Prior art date
Application number
NL7709976A
Other languages
English (en)
Dutch (nl)
Original Assignee
Palmir Magometzagirovich Gafar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Palmir Magometzagirovich Gafar filed Critical Palmir Magometzagirovich Gafar
Publication of NL7709976A publication Critical patent/NL7709976A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4097Bit-line organisation, e.g. bit-line layout, folded bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
NL7709976A 1976-09-30 1977-09-12 Dynamisch geintegreerd halfgeleider geheugen. NL7709976A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU762406945A SU928412A1 (ru) 1976-09-30 1976-09-30 Матричный накопитель дл интегрального запоминающего устройства

Publications (1)

Publication Number Publication Date
NL7709976A true NL7709976A (nl) 1978-04-03

Family

ID=20677899

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7709976A NL7709976A (nl) 1976-09-30 1977-09-12 Dynamisch geintegreerd halfgeleider geheugen.

Country Status (8)

Country Link
US (1) US4133048A (xx)
JP (1) JPS5352023A (xx)
DD (1) DD132744A1 (xx)
DE (1) DE2739276C3 (xx)
FR (1) FR2366665A1 (xx)
GB (1) GB1552543A (xx)
NL (1) NL7709976A (xx)
SU (1) SU928412A1 (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2919166C2 (de) * 1978-05-12 1986-01-02 Nippon Electric Co., Ltd., Tokio/Tokyo Speichervorrichtung
JPS58111183A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd ダイナミツクram集積回路装置
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit
US4031522A (en) * 1975-07-10 1977-06-21 Burroughs Corporation Ultra high sensitivity sense amplifier for memories employing single transistor cells

Also Published As

Publication number Publication date
FR2366665B1 (xx) 1979-09-07
DE2739276B2 (de) 1979-10-11
DE2739276C3 (de) 1981-03-12
US4133048A (en) 1979-01-02
GB1552543A (en) 1979-09-12
JPS5352023A (en) 1978-05-12
DE2739276A1 (de) 1978-04-06
SU928412A1 (ru) 1982-05-15
DD132744A1 (de) 1978-10-25
FR2366665A1 (fr) 1978-04-28

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