SMAP201100062A - Sensore di campo magnetico triassiale - Google Patents

Sensore di campo magnetico triassiale

Info

Publication number
SMAP201100062A
SMAP201100062A SM201100062T SM201100062T SMAP201100062A SM AP201100062 A SMAP201100062 A SM AP201100062A SM 201100062 T SM201100062 T SM 201100062T SM 201100062 T SM201100062 T SM 201100062T SM AP201100062 A SMAP201100062 A SM AP201100062A
Authority
SM
San Marino
Prior art keywords
magnetic field
field sensor
triaxial magnetic
triaxial
sensor
Prior art date
Application number
SM201100062T
Other languages
English (en)
Other versions
SMP201100062B (it
Inventor
Phillip Mather
Jon Slaughter
Nicholas Rizzo
Original Assignee
Everspin Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everspin Technologies Inc filed Critical Everspin Technologies Inc
Publication of SMAP201100062A publication Critical patent/SMAP201100062A/it
Publication of SMP201100062B publication Critical patent/SMP201100062B/it

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/02Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09Magnetoresistive devices
    • G01R33/093Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B61/00Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/10Magnetoresistive devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
SM201100062T 2009-09-25 2011-12-14 Sensore di campo magnetico triassiale. SMP201100062B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/567,496 US8390283B2 (en) 2009-09-25 2009-09-25 Three axis magnetic field sensor
PCT/US2010/050398 WO2011038343A1 (en) 2009-09-25 2010-09-27 Three axis magnetic field sensor

Publications (2)

Publication Number Publication Date
SMAP201100062A true SMAP201100062A (it) 2012-01-18
SMP201100062B SMP201100062B (it) 2012-09-07

Family

ID=43779581

Family Applications (1)

Application Number Title Priority Date Filing Date
SM201100062T SMP201100062B (it) 2009-09-25 2011-12-14 Sensore di campo magnetico triassiale.

Country Status (8)

Country Link
US (4) US8390283B2 (it)
JP (2) JP6089272B2 (it)
KR (1) KR101849516B1 (it)
CN (1) CN102292773B (it)
DE (1) DE112010003775B4 (it)
SM (1) SMP201100062B (it)
TW (2) TWI591361B (it)
WO (1) WO2011038343A1 (it)

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US8390283B2 (en) 2013-03-05
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US20110074406A1 (en) 2011-03-31

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