SG75147A1 - Porous region removing method and semiconductor substrate manufacturing method - Google Patents
Porous region removing method and semiconductor substrate manufacturing methodInfo
- Publication number
- SG75147A1 SG75147A1 SG1998005829A SG1998005829A SG75147A1 SG 75147 A1 SG75147 A1 SG 75147A1 SG 1998005829 A SG1998005829 A SG 1998005829A SG 1998005829 A SG1998005829 A SG 1998005829A SG 75147 A1 SG75147 A1 SG 75147A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor substrate
- substrate manufacturing
- porous region
- region removing
- ultrasonic wave
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1924—Preparing SOI wafers with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP00339798A JP3847935B2 (ja) | 1998-01-09 | 1998-01-09 | 多孔質領域の除去方法及び半導体基体の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG75147A1 true SG75147A1 (en) | 2000-09-19 |
Family
ID=11556241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1998005829A SG75147A1 (en) | 1998-01-09 | 1998-12-15 | Porous region removing method and semiconductor substrate manufacturing method |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6127281A (https=) |
| EP (1) | EP0938132B1 (https=) |
| JP (1) | JP3847935B2 (https=) |
| KR (1) | KR100354918B1 (https=) |
| AT (1) | ATE293284T1 (https=) |
| AU (1) | AU745396B2 (https=) |
| DE (1) | DE69829738T2 (https=) |
| SG (1) | SG75147A1 (https=) |
| TW (1) | TW440950B (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148119B1 (en) * | 1994-03-10 | 2006-12-12 | Canon Kabushiki Kaisha | Process for production of semiconductor substrate |
| US6391067B2 (en) | 1997-02-04 | 2002-05-21 | Canon Kabushiki Kaisha | Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus |
| JPH10223585A (ja) * | 1997-02-04 | 1998-08-21 | Canon Inc | ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法 |
| US6767840B1 (en) * | 1997-02-21 | 2004-07-27 | Canon Kabushiki Kaisha | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| JP3218564B2 (ja) | 1998-01-14 | 2001-10-15 | キヤノン株式会社 | 多孔質領域の除去方法及び半導体基体の製造方法 |
| AU5210300A (en) * | 1999-04-27 | 2000-11-10 | Gebruder Decker Gmbh & Co. Kg | Device for treating silicon wafers |
| JP3810968B2 (ja) * | 1999-12-03 | 2006-08-16 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| JP2004228150A (ja) * | 2003-01-20 | 2004-08-12 | Canon Inc | エッチング方法 |
| US7040330B2 (en) * | 2003-02-20 | 2006-05-09 | Lam Research Corporation | Method and apparatus for megasonic cleaning of patterned substrates |
| TWI227932B (en) * | 2003-06-23 | 2005-02-11 | Promos Technologies Inc | Method for forming a bottle-shaped trench |
| US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
| US20050181572A1 (en) * | 2004-02-13 | 2005-08-18 | Verhoeven Tracy B. | Method for acoustically isolating an acoustic resonator from a substrate |
| JP2005327856A (ja) * | 2004-05-13 | 2005-11-24 | Komatsu Electronic Metals Co Ltd | 半導体ウェーハのエッチング装置 |
| JP4955264B2 (ja) | 2005-03-11 | 2012-06-20 | エルピーダメモリ株式会社 | 多孔質単結晶層を備えた半導体チップおよびその製造方法 |
| US8327861B2 (en) * | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
| DE102008003453A1 (de) * | 2008-01-08 | 2009-07-09 | Robert Bosch Gmbh | Verfahren zur Herstellung poröser Mikrostrukturen, nach diesem Verfahren hergestellte poröse Mikrostrukturen sowie deren Verwendung |
| CN102125921B (zh) * | 2010-01-20 | 2012-09-05 | 常州瑞择微电子科技有限公司 | 一种光掩模在清洗过程中的传输方法 |
| JP7276036B2 (ja) * | 2019-09-19 | 2023-05-18 | 大日本印刷株式会社 | エッチング装置およびエッチング方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05217824A (ja) * | 1992-01-31 | 1993-08-27 | Canon Inc | 半導体ウエハ及びその製造方法 |
| JP3352340B2 (ja) * | 1995-10-06 | 2002-12-03 | キヤノン株式会社 | 半導体基体とその製造方法 |
| US5593505A (en) * | 1995-04-19 | 1997-01-14 | Memc Electronic Materials, Inc. | Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface |
| US6103598A (en) * | 1995-07-13 | 2000-08-15 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate |
| JPH09331049A (ja) * | 1996-04-08 | 1997-12-22 | Canon Inc | 貼り合わせｓｏｉ基板の作製方法及びｓｏｉ基板 |
-
1998
- 1998-01-09 JP JP00339798A patent/JP3847935B2/ja not_active Expired - Fee Related
- 1998-12-15 US US09/211,559 patent/US6127281A/en not_active Expired - Fee Related
- 1998-12-15 SG SG1998005829A patent/SG75147A1/en unknown
- 1998-12-16 TW TW087120966A patent/TW440950B/zh not_active IP Right Cessation
- 1998-12-18 AT AT98310437T patent/ATE293284T1/de not_active IP Right Cessation
- 1998-12-18 DE DE69829738T patent/DE69829738T2/de not_active Expired - Lifetime
- 1998-12-18 EP EP98310437A patent/EP0938132B1/en not_active Expired - Lifetime
- 1998-12-24 AU AU98188/98A patent/AU745396B2/en not_active Ceased
- 1998-12-26 KR KR1019980058992A patent/KR100354918B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6127281A (en) | 2000-10-03 |
| JP3847935B2 (ja) | 2006-11-22 |
| EP0938132A2 (en) | 1999-08-25 |
| DE69829738D1 (de) | 2005-05-19 |
| TW440950B (en) | 2001-06-16 |
| DE69829738T2 (de) | 2006-02-09 |
| AU745396B2 (en) | 2002-03-21 |
| KR100354918B1 (ko) | 2002-11-18 |
| KR19990066873A (ko) | 1999-08-16 |
| AU9818898A (en) | 1999-07-29 |
| ATE293284T1 (de) | 2005-04-15 |
| EP0938132A3 (en) | 1999-12-22 |
| EP0938132B1 (en) | 2005-04-13 |
| JPH11204494A (ja) | 1999-07-30 |
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