SG66275A1 - Semiconductor device containing electrostatic capacitive element and method for manufacturing same - Google Patents

Semiconductor device containing electrostatic capacitive element and method for manufacturing same

Info

Publication number
SG66275A1
SG66275A1 SG1996006850A SG1996006850A SG66275A1 SG 66275 A1 SG66275 A1 SG 66275A1 SG 1996006850 A SG1996006850 A SG 1996006850A SG 1996006850 A SG1996006850 A SG 1996006850A SG 66275 A1 SG66275 A1 SG 66275A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
capacitive element
device containing
manufacturing same
region
Prior art date
Application number
SG1996006850A
Other languages
English (en)
Inventor
Hiroshi Yuzurihara
Shin Kikuchi
Shunsuke Inoue
Yoshio Nakamura
Yukihiko Sakashita
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Publication of SG66275A1 publication Critical patent/SG66275A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
SG1996006850A 1990-05-31 1991-05-29 Semiconductor device containing electrostatic capacitive element and method for manufacturing same SG66275A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP13961590 1990-05-31
JP13961990 1990-05-31
JP30854490 1990-11-16

Publications (1)

Publication Number Publication Date
SG66275A1 true SG66275A1 (en) 1999-07-20

Family

ID=27317902

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996006850A SG66275A1 (en) 1990-05-31 1991-05-29 Semiconductor device containing electrostatic capacitive element and method for manufacturing same

Country Status (9)

Country Link
US (1) US5541454A (fr)
EP (1) EP0463741B1 (fr)
KR (1) KR950000142B1 (fr)
CN (1) CN1040265C (fr)
AT (1) ATE155928T1 (fr)
DE (1) DE69126925T2 (fr)
ES (1) ES2103778T3 (fr)
MY (1) MY115269A (fr)
SG (1) SG66275A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352744B2 (ja) * 1993-01-18 2002-12-03 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
TW403972B (en) 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
KR970007967B1 (en) * 1994-05-11 1997-05-19 Hyundai Electronics Ind Fabrication method and semiconductor device
US5595928A (en) * 1995-09-18 1997-01-21 Vanguard International Semiconductor Corporation High density dynamic random access memory cell structure having a polysilicon pillar capacitor
US6025226A (en) * 1998-01-15 2000-02-15 International Business Machines Corporation Method of forming a capacitor and a capacitor formed using the method
US6177305B1 (en) 1998-12-17 2001-01-23 Lsi Logic Corporation Fabrication of metal-insulator-metal capacitive structures
DE10130934A1 (de) * 2001-06-27 2003-01-16 Infineon Technologies Ag Grabenkondensator und entsprechendes Herstellungsverfahren
EP1294021A1 (fr) * 2001-08-31 2003-03-19 Infineon Technologies AG Condensateur pour un dispositif de circuit semiconducteur et sa méthode de fabrication
US7350292B2 (en) * 2004-03-19 2008-04-01 Hewlett-Packard Development Company, L.P. Method for affecting impedance of an electrical apparatus
JP4667030B2 (ja) 2004-12-10 2011-04-06 キヤノン株式会社 固体撮像装置用の半導体基板とその製造方法
KR101912286B1 (ko) * 2017-03-27 2018-10-29 삼성전기 주식회사 커패시터 부품

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
NL173572C (nl) * 1976-02-12 1984-02-01 Philips Nv Halfgeleiderinrichting.
US4169270A (en) * 1976-12-09 1979-09-25 Fairchild Camera And Instrument Corporation Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
US4352239A (en) * 1980-04-17 1982-10-05 Fairchild Camera And Instrument Process for suppressing electromigration in conducting lines formed on integrated circuits by control of crystalline boundary orientation
DE3217026A1 (de) * 1981-05-06 1982-12-30 Mitsubishi Denki K.K., Tokyo Halbleitervorrichtung
FR2526225B1 (fr) * 1982-04-30 1985-11-08 Radiotechnique Compelec Procede de realisation d'un condensateur integre, et dispositif ainsi obtenu
JPS58215067A (ja) * 1982-06-08 1983-12-14 Nec Corp 半導体集積回路装置
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS61156865A (ja) * 1984-12-28 1986-07-16 Nec Corp 半導体装置
US4811076A (en) * 1985-05-01 1989-03-07 Texas Instruments Incorporated Device and process with doubled capacitors
JPS62259466A (ja) * 1986-05-02 1987-11-11 Sony Corp メモリ装置
KR920005632B1 (ko) * 1987-03-20 1992-07-10 가부시기가이샤 히다찌세이사꾸쇼 다층 산화 실리콘 질화 실리콘 유전체의 반도체장치 및 그의 제조방법
JPS6437051A (en) * 1987-07-31 1989-02-07 Nec Corp Manufacture of semiconductor device
JPH01120035A (ja) * 1987-11-02 1989-05-12 Nec Corp 半導体装置及びその製造方法
JP2670288B2 (ja) * 1988-03-24 1997-10-29 株式会社東芝 半導体装置の製造方法
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0330474A (ja) * 1989-06-28 1991-02-08 Nec Corp シリコン半導体装置

Also Published As

Publication number Publication date
KR950000142B1 (ko) 1995-01-10
CN1056955A (zh) 1991-12-11
ES2103778T3 (es) 1997-10-01
MY115269A (en) 2003-05-31
CN1040265C (zh) 1998-10-14
EP0463741A2 (fr) 1992-01-02
ATE155928T1 (de) 1997-08-15
DE69126925D1 (de) 1997-08-28
DE69126925T2 (de) 1997-11-20
EP0463741A3 (en) 1992-11-19
KR910020924A (ko) 1991-12-20
EP0463741B1 (fr) 1997-07-23
US5541454A (en) 1996-07-30

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