FI945242A0 - LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä - Google Patents
LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmäInfo
- Publication number
- FI945242A0 FI945242A0 FI945242A FI945242A FI945242A0 FI 945242 A0 FI945242 A0 FI 945242A0 FI 945242 A FI945242 A FI 945242A FI 945242 A FI945242 A FI 945242A FI 945242 A0 FI945242 A0 FI 945242A0
- Authority
- FI
- Finland
- Prior art keywords
- electrode
- semiconductor device
- channel
- predetermined shape
- semiconductor substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/008—Electric or magnetic shielding of printed inductances
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0064—Constructional details comprising semiconductor material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0078—Constructional details comprising spiral inductor on a substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/901—Capacitive junction
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Filters And Equalizers (AREA)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30595493A JP3390065B2 (ja) | 1993-11-10 | 1993-11-10 | Lc素子,半導体装置及びlc素子の製造方法 |
JP30595493 | 1993-11-10 | ||
JP32314993 | 1993-11-29 | ||
JP32314993A JP3390070B2 (ja) | 1993-11-29 | 1993-11-29 | Lc素子,半導体装置及びlc素子の製造方法 |
JP35381093A JP3497221B2 (ja) | 1993-12-28 | 1993-12-28 | Lc素子,半導体装置及びlc素子の製造方法 |
JP35381093 | 1993-12-28 | ||
US08/460,165 US5492856A (en) | 1993-11-10 | 1995-06-02 | Method of forming a semiconductor device having a LC element |
US46016595 | 1995-06-02 |
Publications (3)
Publication Number | Publication Date |
---|---|
FI945242A0 true FI945242A0 (fi) | 1994-11-08 |
FI945242A FI945242A (fi) | 1995-05-11 |
FI112406B FI112406B (fi) | 2003-11-28 |
Family
ID=27479911
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI945242A FI112406B (fi) | 1993-11-10 | 1994-11-08 | LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä |
Country Status (3)
Country | Link |
---|---|
US (2) | US5497028A (fi) |
EP (1) | EP0653838B1 (fi) |
FI (1) | FI112406B (fi) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW267260B (fi) * | 1993-12-29 | 1996-01-01 | Tif Kk | |
US6285070B1 (en) * | 1995-12-22 | 2001-09-04 | Micron Technology, Inc. | Method of forming semiconductor die with integral decoupling capacitor |
US6563192B1 (en) | 1995-12-22 | 2003-05-13 | Micron Technology, Inc. | Semiconductor die with integral decoupling capacitor |
US6008713A (en) * | 1996-02-29 | 1999-12-28 | Texas Instruments Incorporated | Monolithic inductor |
US5936299A (en) * | 1997-03-13 | 1999-08-10 | International Business Machines Corporation | Substrate contact for integrated spiral inductors |
US5915188A (en) * | 1997-12-22 | 1999-06-22 | Motorola, Inc. | Integrated inductor and capacitor on a substrate and method for fabricating same |
US6885275B1 (en) * | 1998-11-12 | 2005-04-26 | Broadcom Corporation | Multi-track integrated spiral inductor |
GB2353139B (en) * | 1999-08-12 | 2001-08-29 | United Microelectronics Corp | Inductor and method of manufacturing the same |
US6368933B1 (en) * | 1999-12-15 | 2002-04-09 | Intel Corporation | Tap connections for circuits with leakage suppression capability |
JP4256575B2 (ja) * | 2000-08-15 | 2009-04-22 | パナソニック株式会社 | バイアホールを備えた高周波受動回路および高周波増幅器 |
US6549096B2 (en) | 2001-03-19 | 2003-04-15 | International Business Machines Corporation | Switched inductor/varactor tuning circuit having a variable integrated inductor |
US7235862B2 (en) * | 2001-07-10 | 2007-06-26 | National Semiconductor Corporation | Gate-enhanced junction varactor |
US7081663B2 (en) | 2002-01-18 | 2006-07-25 | National Semiconductor Corporation | Gate-enhanced junction varactor with gradual capacitance variation |
US6960968B2 (en) * | 2002-06-26 | 2005-11-01 | Koninklijke Philips Electronics N.V. | Planar resonator for wireless power transfer |
US7141483B2 (en) * | 2002-09-19 | 2006-11-28 | Applied Materials, Inc. | Nitrous oxide anneal of TEOS/ozone CVD for improved gapfill |
AU2003252737A1 (en) | 2003-07-30 | 2005-02-15 | Nec Corporation | Parallel flat plate line-type element and circuit substrate |
KR100579481B1 (ko) * | 2004-02-14 | 2006-05-15 | 삼성전자주식회사 | 인터디지털 커패시터를 이용한 소형 다층 대역 통과 필터 |
US7196397B2 (en) * | 2004-03-04 | 2007-03-27 | International Rectifier Corporation | Termination design with multiple spiral trench rings |
US7268645B2 (en) | 2005-05-09 | 2007-09-11 | Seiko Epson Corporation | Integrated resonator structure and methods for its manufacture and use |
TWI294681B (en) * | 2006-01-25 | 2008-03-11 | Ind Tech Res Inst | Image ground shielding structure |
DE102006035204B4 (de) * | 2006-07-29 | 2009-10-15 | Atmel Duisburg Gmbh | Monolithisch integrierbare Schaltungsanordnung |
US20080251275A1 (en) * | 2007-04-12 | 2008-10-16 | Ralph Morrison | Decoupling Transmission Line |
US8212155B1 (en) * | 2007-06-26 | 2012-07-03 | Wright Peter V | Integrated passive device |
JP4652434B2 (ja) * | 2007-09-22 | 2011-03-16 | 太陽誘電株式会社 | 可変インダクタ及びこれを回路構成に組み入れた電子回路装置 |
KR102072803B1 (ko) * | 2013-04-12 | 2020-02-04 | 삼성디스플레이 주식회사 | 박막 반도체 장치 및 유기 발광 표시 장치 |
US9461222B1 (en) * | 2015-06-30 | 2016-10-04 | Epistar Corporation | Light-emitting element and the light-emitting module thereof |
US11024454B2 (en) * | 2015-10-16 | 2021-06-01 | Qualcomm Incorporated | High performance inductors |
US9698214B1 (en) * | 2016-03-31 | 2017-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Capacitor structure of integrated circuit chip and method of fabricating the same |
US11164694B2 (en) * | 2019-09-27 | 2021-11-02 | Apple Inc. | Low-spurious electric-field inductor design |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3022472A (en) * | 1958-01-22 | 1962-02-20 | Bell Telephone Labor Inc | Variable equalizer employing semiconductive element |
US3778643A (en) * | 1972-05-18 | 1973-12-11 | Gen Motors Corp | A solid state variable delay line using reversed biased pn junctions |
US5070317A (en) * | 1989-01-17 | 1991-12-03 | Bhagat Jayant K | Miniature inductor for integrated circuits and devices |
US5039964A (en) * | 1989-02-16 | 1991-08-13 | Takeshi Ikeda | Inductance and capacitance noise filter |
US5111169A (en) * | 1989-03-23 | 1992-05-05 | Takeshi Ikeda | Lc noise filter |
JPH02280410A (ja) * | 1989-04-20 | 1990-11-16 | Takeshi Ikeda | Lcノイズフィルタ |
JPH0377360A (ja) * | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | 半導体装置 |
JP3280019B2 (ja) * | 1989-10-26 | 2002-04-30 | 新潟精密株式会社 | Lcノイズフィルタ |
US5126707A (en) * | 1989-12-25 | 1992-06-30 | Takeshi Ikeda | Laminated lc element and method for manufacturing the same |
CA2059864C (en) * | 1991-01-23 | 1995-10-17 | Mitsunobu Esaki | Lc filter |
JPH0677407A (ja) * | 1992-04-06 | 1994-03-18 | Nippon Precision Circuits Kk | 半導体装置 |
-
1994
- 1994-11-02 US US08/335,420 patent/US5497028A/en not_active Expired - Lifetime
- 1994-11-04 EP EP94117428A patent/EP0653838B1/en not_active Expired - Lifetime
- 1994-11-08 FI FI945242A patent/FI112406B/fi not_active IP Right Cessation
-
1995
- 1995-06-02 US US08/460,165 patent/US5492856A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0653838A1 (en) | 1995-05-17 |
FI112406B (fi) | 2003-11-28 |
EP0653838B1 (en) | 2000-08-09 |
US5497028A (en) | 1996-03-05 |
FI945242A (fi) | 1995-05-11 |
US5492856A (en) | 1996-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FI945242A (fi) | LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä | |
ATE251343T1 (de) | Transistor mit schwebendem gate und mehreren steuergates | |
DE69418283T2 (de) | TFT mit niedriger parasitärer Kapazität | |
ATE200365T1 (de) | Verfahren zur herstellung einer integrierten halbleiterschaltungsanordnung mit komplementären feldeffekttransistoren | |
TW346683B (en) | Semiconductor device and process for producing the same | |
EP0510604A3 (en) | Semiconductor device and method of manufacturing the same | |
TW363228B (en) | Metal oxide semiconductor field effect transistor and method of making the same | |
DE3585239D1 (de) | Transistorschaltung fuer halbleitervorrichtung mit hysterese-verhalten und ihre herstellungsverfahren. | |
DE69227050D1 (de) | Halbleitersensor mit elektrostatischer Kapazität | |
KR860002135A (ko) | 반도체기판의 주표면에 凹형 도랑이 형성된 반도체장치 및 그 제조방법 | |
DE69420492D1 (de) | Halbleiterschaltkreisbauelement mit reduziertem Einfluss parasitärer Kapazitäten | |
EP0364393A3 (en) | Power semiconductor device | |
WO1994021102A3 (fr) | Procede de fabrication de transistors a couches minces etages directs | |
DE3751892T2 (de) | Halbleiteranordnung mit zwei Verbindungshalbleitern und Verfahren zu ihrer Herstellung | |
CA2009068A1 (en) | Trench jfet integrated circuit elements | |
SG66275A1 (en) | Semiconductor device containing electrostatic capacitive element and method for manufacturing same | |
TW372340B (en) | Semiconductor apparatus and manufacturing method thereof | |
EP0361121A3 (en) | Semiconductor ic device with improved element isolating scheme | |
EP0208877A3 (en) | Method of manufacturing semiconductor devices having connecting areas | |
DE3786693T2 (de) | Programmierbarer Kontaktfleck. | |
JPS5752144A (en) | Semiconductor device | |
EP0436038A4 (en) | Semiconductor device and method of producing the same | |
SE9504150L (sv) | Förfarande vid tillverkning av en halvledaranordning | |
JPS648657A (en) | Supplementary semiconductor integrated circuit device | |
EP0334659A3 (en) | Conductivity modulated field effect transistor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Transfer of assignment of patent |
Owner name: NIIGATA SEIMITSU CO., LTD. Free format text: NIIGATA SEIMITSU CO., LTD. |
|
MA | Patent expired |