ATE251343T1 - Transistor mit schwebendem gate und mehreren steuergates - Google Patents

Transistor mit schwebendem gate und mehreren steuergates

Info

Publication number
ATE251343T1
ATE251343T1 AT96110650T AT96110650T ATE251343T1 AT E251343 T1 ATE251343 T1 AT E251343T1 AT 96110650 T AT96110650 T AT 96110650T AT 96110650 T AT96110650 T AT 96110650T AT E251343 T1 ATE251343 T1 AT E251343T1
Authority
AT
Austria
Prior art keywords
floating gate
transistor
control gates
multiple control
electrode
Prior art date
Application number
AT96110650T
Other languages
English (en)
Inventor
Shibata Tadashi
Ohmi Tadahiro
Original Assignee
Shibata Tadashi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibata Tadashi filed Critical Shibata Tadashi
Application granted granted Critical
Publication of ATE251343T1 publication Critical patent/ATE251343T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Biophysics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computational Linguistics (AREA)
  • Mathematical Physics (AREA)
  • Neurology (AREA)
  • Artificial Intelligence (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT96110650T 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates ATE251343T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1141463A JP2662559B2 (ja) 1989-06-02 1989-06-02 半導体装置

Publications (1)

Publication Number Publication Date
ATE251343T1 true ATE251343T1 (de) 2003-10-15

Family

ID=15292470

Family Applications (2)

Application Number Title Priority Date Filing Date
AT90908684T ATE161657T1 (de) 1989-06-02 1990-06-01 Halbleiteranordnung
AT96110650T ATE251343T1 (de) 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT90908684T ATE161657T1 (de) 1989-06-02 1990-06-01 Halbleiteranordnung

Country Status (6)

Country Link
US (2) US5258657A (de)
EP (2) EP0739041B1 (de)
JP (1) JP2662559B2 (de)
AT (2) ATE161657T1 (de)
DE (2) DE69034105T2 (de)
WO (1) WO1990015444A1 (de)

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US5621336A (en) * 1989-06-02 1997-04-15 Shibata; Tadashi Neuron circuit
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
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TW208086B (de) * 1991-03-21 1993-06-21 Shibata Naoru
JP3269659B2 (ja) * 1992-05-27 2002-03-25 直 柴田 半導体装置
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JP3119392B2 (ja) * 1992-06-03 2000-12-18 直 柴田 半導体装置
JP3421365B2 (ja) * 1992-07-29 2003-06-30 直 柴田 半導体装置
JPH0677426A (ja) * 1992-08-26 1994-03-18 Sunao Shibata 半導体集積回路
JP3438241B2 (ja) * 1992-10-29 2003-08-18 直 柴田 半導体神経回路装置
JP3278080B2 (ja) * 1993-02-22 2002-04-30 直 柴田 半導体集積回路
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
JP2942088B2 (ja) * 1993-03-19 1999-08-30 ローム株式会社 半導体装置の動作方法、および半導体装置
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JP3289749B2 (ja) * 1993-12-02 2002-06-10 直 柴田 半導体集積回路
JP3611340B2 (ja) * 1993-12-28 2005-01-19 直 柴田 半導体回路
WO1995022145A1 (en) * 1994-02-15 1995-08-17 Tadashi Shibata Semiconductor device
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
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JP3406949B2 (ja) * 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
US6456992B1 (en) * 1995-03-24 2002-09-24 Tadashi Shibata Semiconductor arithmetic circuit
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JPH10224224A (ja) * 1997-02-03 1998-08-21 Sunao Shibata 半導体演算装置
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JPH10260817A (ja) 1997-03-15 1998-09-29 Sunao Shibata 半導体演算回路及びデ−タ処理装置
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US6150851A (en) * 1997-06-06 2000-11-21 Tadahiro Ohmi Charge transfer amplifier circuit, voltage comparator, and sense amplifier
JPH1196276A (ja) 1997-09-22 1999-04-09 Sunao Shibata 半導体演算回路
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JP3760614B2 (ja) * 1997-12-26 2006-03-29 ソニー株式会社 半導体装置及びその制御方法
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JP3877597B2 (ja) * 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
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KR100823450B1 (ko) * 2006-12-27 2008-04-17 동부일렉트로닉스 주식회사 반도체 소자와 이의 제조 방법
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US7719359B1 (en) 2007-07-31 2010-05-18 Maxim Integrated Products, Inc. Low noise variable gain amplifier
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JP5858020B2 (ja) 2013-10-03 2016-02-10 株式会社デンソー 群情報記憶認識装置
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Also Published As

Publication number Publication date
EP0516847A4 (de) 1992-03-05
ATE161657T1 (de) 1998-01-15
DE69034105T2 (de) 2004-04-22
JPH036679A (ja) 1991-01-14
US5258657A (en) 1993-11-02
US5608340A (en) 1997-03-04
EP0739041B1 (de) 2003-10-01
DE69031870D1 (de) 1998-02-05
EP0516847B1 (de) 1997-12-29
EP0739041A3 (de) 1996-11-06
EP0516847A1 (de) 1992-12-09
DE69031870T2 (de) 1998-04-16
DE69034105D1 (de) 2003-11-06
WO1990015444A1 (en) 1990-12-13
EP0739041A2 (de) 1996-10-23
JP2662559B2 (ja) 1997-10-15

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