ATE161657T1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
ATE161657T1
ATE161657T1 AT90908684T AT90908684T ATE161657T1 AT E161657 T1 ATE161657 T1 AT E161657T1 AT 90908684 T AT90908684 T AT 90908684T AT 90908684 T AT90908684 T AT 90908684T AT E161657 T1 ATE161657 T1 AT E161657T1
Authority
AT
Austria
Prior art keywords
floating gate
electrode
capacitive coupling
semiconductor arrangement
substrate
Prior art date
Application number
AT90908684T
Other languages
English (en)
Inventor
Tadashi Shibata
Tadahiro Ohmi
Original Assignee
Tadashi Shibata
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadashi Shibata filed Critical Tadashi Shibata
Application granted granted Critical
Publication of ATE161657T1 publication Critical patent/ATE161657T1/de

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G06N3/065—Analogue means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Artificial Intelligence (AREA)
  • Computational Linguistics (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AT90908684T 1989-06-02 1990-06-01 Halbleiteranordnung ATE161657T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1141463A JP2662559B2 (ja) 1989-06-02 1989-06-02 半導体装置

Publications (1)

Publication Number Publication Date
ATE161657T1 true ATE161657T1 (de) 1998-01-15

Family

ID=15292470

Family Applications (2)

Application Number Title Priority Date Filing Date
AT90908684T ATE161657T1 (de) 1989-06-02 1990-06-01 Halbleiteranordnung
AT96110650T ATE251343T1 (de) 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT96110650T ATE251343T1 (de) 1989-06-02 1990-06-01 Transistor mit schwebendem gate und mehreren steuergates

Country Status (6)

Country Link
US (2) US5258657A (de)
EP (2) EP0739041B1 (de)
JP (1) JP2662559B2 (de)
AT (2) ATE161657T1 (de)
DE (2) DE69034105T2 (de)
WO (1) WO1990015444A1 (de)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5594372A (en) * 1989-06-02 1997-01-14 Shibata; Tadashi Source follower using NMOS and PMOS transistors
JP2662559B2 (ja) * 1989-06-02 1997-10-15 直 柴田 半導体装置
US5621336A (en) * 1989-06-02 1997-04-15 Shibata; Tadashi Neuron circuit
EP0570584A1 (de) * 1991-01-12 1993-11-24 SHIBATA, Tadashi Halbleiter-vorrichtung
TW203665B (de) * 1991-03-21 1993-04-11 Shibata Naoru
JP3269659B2 (ja) * 1992-05-27 2002-03-25 直 柴田 半導体装置
KR950007353B1 (ko) * 1992-05-30 1995-07-10 정호선 시냅스 모스 트랜지스터
JP3119392B2 (ja) * 1992-06-03 2000-12-18 直 柴田 半導体装置
JP3421365B2 (ja) * 1992-07-29 2003-06-30 直 柴田 半導体装置
JPH0677426A (ja) * 1992-08-26 1994-03-18 Sunao Shibata 半導体集積回路
JP3438241B2 (ja) * 1992-10-29 2003-08-18 直 柴田 半導体神経回路装置
JP3278080B2 (ja) * 1993-02-22 2002-04-30 直 柴田 半導体集積回路
JP3459017B2 (ja) * 1993-02-22 2003-10-20 直 柴田 半導体装置
JP2942088B2 (ja) * 1993-03-19 1999-08-30 ローム株式会社 半導体装置の動作方法、および半導体装置
US6072528A (en) * 1993-09-13 2000-06-06 Olympus Optical Co., Ltd. Solid state image sensor
JP3289748B2 (ja) * 1993-11-30 2002-06-10 直 柴田 半導体装置
JP3289749B2 (ja) * 1993-12-02 2002-06-10 直 柴田 半導体集積回路
JP3611340B2 (ja) * 1993-12-28 2005-01-19 直 柴田 半導体回路
EP0694198A1 (de) * 1994-02-15 1996-01-31 SHIBATA, Tadashi Halbleiter anordnung
JP3501416B2 (ja) * 1994-04-28 2004-03-02 忠弘 大見 半導体装置
JP2846822B2 (ja) * 1994-11-28 1999-01-13 モトローラ株式会社 ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム方法
JP3406949B2 (ja) * 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
WO1996030855A1 (fr) * 1995-03-24 1996-10-03 Tadashi Shibata Circuit arithmetique a semiconducteurs
US5644253A (en) * 1995-03-30 1997-07-01 Fujitsu Limited Multiple-valued logic circuit
JP2937805B2 (ja) * 1995-05-19 1999-08-23 モトローラ株式会社 ２層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム／消去／読出方法
DE69518326T2 (de) * 1995-10-13 2001-01-18 St Microelectronics Srl Niederspannungsneuronalnetzwerk mit sehr niedrigem Leistungsverbrauch
WO1997027632A1 (de) * 1996-01-25 1997-07-31 Siemens Aktiengesellschaft Halbleiterneuron mit variablen eingangsgewichten
DE19609078C1 (de) * 1996-03-08 1997-06-05 Siemens Ag Schwellwertlogik mit verbessertem Signal-Rausch-Abstand
JP3402909B2 (ja) * 1996-03-12 2003-05-06 アルプス電気株式会社 薄膜トランジスタ装置及び液晶表示装置
US5753954A (en) * 1996-07-19 1998-05-19 National Semiconductor Corporation Single-poly neuron MOS transistor
DE19630111C1 (de) * 1996-07-25 1997-08-14 Siemens Ag Vorrichtungen zur selbstjustierenden Arbeitspunkteinstellung in Verstärkerschaltungen mit Neuron-MOS-Transistoren
DE19630112C1 (de) * 1996-07-25 1997-08-14 Siemens Ag Verstärker mit Neuron-MOS-Transistoren
JPH1051007A (ja) * 1996-08-02 1998-02-20 Semiconductor Energy Lab Co Ltd 半導体装置
DE19700983C2 (de) * 1997-01-14 1998-12-03 Siemens Ag Digital/Analog-Umsetzer
JP3628136B2 (ja) 1997-01-30 2005-03-09 富士通株式会社 容量結合を利用した論理回路、ａｄ変換回路及びｄａ変換回路
JPH10224224A (ja) * 1997-02-03 1998-08-21 Sunao Shibata 半導体演算装置
JPH10283793A (ja) * 1997-02-06 1998-10-23 Sunao Shibata 半導体回路
US5806054A (en) * 1997-02-14 1998-09-08 National Semiconductor Corporation Neuron MOSFET module structure for binary logic circuits
JPH10260817A (ja) 1997-03-15 1998-09-29 Sunao Shibata 半導体演算回路及びデ−タ処理装置
JPH10257352A (ja) 1997-03-15 1998-09-25 Sunao Shibata 半導体演算回路
US5864835A (en) * 1997-03-24 1999-01-26 Gorelik; Vladimir A. Apparatus for simulating a biological neuron
US6150851A (en) * 1997-06-06 2000-11-21 Tadahiro Ohmi Charge transfer amplifier circuit, voltage comparator, and sense amplifier
JPH1196276A (ja) 1997-09-22 1999-04-09 Sunao Shibata 半導体演算回路
TW409253B (en) * 1997-09-29 2000-10-21 Siemens Ag Associative memory and its operation method
JP3760614B2 (ja) * 1997-12-26 2006-03-29 ソニー株式会社 半導体装置及びその制御方法
JP3305267B2 (ja) 1998-08-07 2002-07-22 株式会社モノリス シナプス素子、しきい値回路およびニューロン装置
US6470328B1 (en) 1998-08-07 2002-10-22 Monolith Company, Ltd. Artificial neuron on the base of B-driven threshold element
US6430585B1 (en) 1998-09-21 2002-08-06 Rn2R, L.L.C. Noise tolerant conductance-based logic gate and methods of operation and manufacturing thereof
JP3226513B2 (ja) 1999-08-09 2001-11-05 株式会社半導体理工学研究センター 演算回路、演算装置、及び半導体演算回路
JP3199707B2 (ja) 1999-08-09 2001-08-20 株式会社半導体理工学研究センター 半導体演算回路及び演算装置
TW446192U (en) * 2000-05-04 2001-07-11 United Microelectronics Corp Electrostatic discharge protection circuit
US6407425B1 (en) * 2000-09-21 2002-06-18 Texas Instruments Incorporated Programmable neuron MOSFET on SOI
US6501294B2 (en) 2001-04-26 2002-12-31 International Business Machines Corporation Neuron circuit
TW516037B (en) * 2001-07-13 2003-01-01 Macronix Int Co Ltd Buffer and method for compensating adjacent bit threshold voltage
JP3877597B2 (ja) * 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
KR100598049B1 (ko) * 2004-10-28 2006-07-07 삼성전자주식회사 멀티 비트 비휘발성 메모리 셀을 포함하는 반도체 소자 및그 제조 방법
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
JP2007335648A (ja) * 2006-06-15 2007-12-27 Toppan Printing Co Ltd デジタル−アナログ変換器
KR100823450B1 (ko) * 2006-12-27 2008-04-17 동부일렉트로닉스 주식회사 반도체 소자와 이의 제조 방법
US7535758B2 (en) 2007-02-06 2009-05-19 Maxim Integrated Products, Inc. One or multiple-times programmable device
US7719359B1 (en) 2007-07-31 2010-05-18 Maxim Integrated Products, Inc. Low noise variable gain amplifier
US10410117B2 (en) 2008-09-21 2019-09-10 Brainchip, Inc. Method and a system for creating dynamic neural function libraries
JP5858020B2 (ja) 2013-10-03 2016-02-10 株式会社デンソー 群情報記憶認識装置
CN106910773B (zh) * 2017-02-21 2019-08-20 南京大学 多栅极神经元晶体管及其制备方法和构成的神经网络

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL274830A (de) * 1961-04-12
JPS5676559A (en) * 1979-11-29 1981-06-24 Toshiba Corp Semiconductor integrated circuit
JPS59175770A (ja) * 1983-03-25 1984-10-04 Toshiba Corp 半導体論理素子
KR890004211B1 (ko) * 1983-07-08 1989-10-27 후지쓰가부시끼가이샤 콤프리멘타리 로직회로
JPS60117783A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 不揮発性半導体メモリ装置
US5070256A (en) * 1987-06-29 1991-12-03 Digital Equipment Corporation Bus transmitter having controlled trapezoidal slew rate
US5055897A (en) * 1988-07-27 1991-10-08 Intel Corporation Semiconductor cell for neural network and the like
US4951239A (en) * 1988-10-27 1990-08-21 The United States Of America As Represented By The Secretary Of The Navy Artificial neural network implementation
US4999525A (en) * 1989-02-10 1991-03-12 Intel Corporation Exclusive-or cell for pattern matching employing floating gate devices
JP2823229B2 (ja) * 1989-04-05 1998-11-11 株式会社東芝 電子回路、差動増幅回路、及びアナログ乗算回路
JP2662559B2 (ja) * 1989-06-02 1997-10-15 直 柴田 半導体装置
US4961002A (en) * 1989-07-13 1990-10-02 Intel Corporation Synapse cell employing dual gate transistor structure
US5028810A (en) * 1989-07-13 1991-07-02 Intel Corporation Four quadrant synapse cell employing single column summing line
JPH0435224A (ja) * 1990-05-28 1992-02-06 Nec Corp 半導体装置
JPH04192716A (ja) * 1990-11-26 1992-07-10 Mitsubishi Electric Corp Ｍｏｓトランジスタ出力回路

Also Published As

Publication number Publication date
DE69034105D1 (de) 2003-11-06
EP0739041A3 (de) 1996-11-06
EP0739041B1 (de) 2003-10-01
EP0739041A2 (de) 1996-10-23
ATE251343T1 (de) 2003-10-15
DE69034105T2 (de) 2004-04-22
JPH036679A (ja) 1991-01-14
JP2662559B2 (ja) 1997-10-15
US5258657A (en) 1993-11-02
DE69031870T2 (de) 1998-04-16
US5608340A (en) 1997-03-04
EP0516847B1 (de) 1997-12-29
EP0516847A1 (de) 1992-12-09
DE69031870D1 (de) 1998-02-05
EP0516847A4 (de) 1992-03-05
WO1990015444A1 (en) 1990-12-13

Similar Documents

Publication Publication Date Title
ATE161657T1 (de) Halbleiteranordnung
KR860006840A (ko) 반도체 집적회로장치 및 그 제조방법
EP0566739A4 (en) Semiconductor device
FI945242A (fi) LC-elementti, puolijohdelaite ja LC-elementin valmistusmenetelmä
EP0578821A4 (en) Semiconductor device
EP1309006A3 (de) Integrierter Schaltkreis mit enggekoppeltem Hochspannungsausgang und "Offline" Transistorpaar
EP0784345A3 (de) Schaltkreis mit Feldeffekttransistoren
EP0877425A3 (de) Feldeffektanordnung mit einem Kanal aus polykristallinem Silizium
EP0354449A3 (de) Einkristall-Halbleitersubstrat
SE8007492L (sv) Felteffekttransistor av mos-typ
EP0851494A3 (de) Halbleiteranordnung mit einer Schutzschaltung
KR900002462A (ko) 반도체 장치
KR910005448A (ko) 반도체 집적회로
EP0973204A3 (de) MOS-Transistor mit hoher Spannungsfestigkeit und niedrigem Einschaltwiderstand
EP0239250A3 (de) MOS-Transistor mit kurzer Kanallänge
EP0414400A3 (de) MOSFET-Verarmungsanordnung
JPS57204171A (en) Semiconductor device
KR930003414A (ko) 반도체 집적 회로 장치
EP1041635A3 (de) Halbleiter-Speicheranordnung und Verfahren zur Herstellung
DE3370244D1 (en) Stacked mos transistor
GB2011710A (en) Semiconductor structures
EP0905791A3 (de) Miniaturisierung eines Halbleiterchips
KR970008561A (ko) 반도체장치의 입력보호 회로의 트랜지스터
KR850008249A (ko) 반도체 장치
KR930020735A (ko) 듀얼게이트전계효과형 반도체장치

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties