DE69227050D1 - Halbleitersensor mit elektrostatischer Kapazität - Google Patents

Halbleitersensor mit elektrostatischer Kapazität

Info

Publication number
DE69227050D1
DE69227050D1 DE69227050T DE69227050T DE69227050D1 DE 69227050 D1 DE69227050 D1 DE 69227050D1 DE 69227050 T DE69227050 T DE 69227050T DE 69227050 T DE69227050 T DE 69227050T DE 69227050 D1 DE69227050 D1 DE 69227050D1
Authority
DE
Germany
Prior art keywords
electrostatic capacitance
semiconductor
semiconductor sensor
pair
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69227050T
Other languages
English (en)
Other versions
DE69227050T2 (de
Inventor
Yutaka Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69227050D1 publication Critical patent/DE69227050D1/de
Application granted granted Critical
Publication of DE69227050T2 publication Critical patent/DE69227050T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Measuring Fluid Pressure (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69227050T 1991-02-25 1992-02-24 Halbleitersensor mit elektrostatischer Kapazität Expired - Fee Related DE69227050T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3030394A JPH04268725A (ja) 1991-02-25 1991-02-25 力学量検出センサおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69227050D1 true DE69227050D1 (de) 1998-10-29
DE69227050T2 DE69227050T2 (de) 1999-04-29

Family

ID=12302713

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69227050T Expired - Fee Related DE69227050T2 (de) 1991-02-25 1992-02-24 Halbleitersensor mit elektrostatischer Kapazität

Country Status (5)

Country Link
US (1) US5285097A (de)
EP (1) EP0501359B1 (de)
JP (1) JPH04268725A (de)
AT (1) ATE171566T1 (de)
DE (1) DE69227050T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151956B2 (ja) * 1992-09-04 2001-04-03 株式会社村田製作所 加速度センサ
US5549785A (en) * 1992-09-14 1996-08-27 Nippondenso Co., Ltd. Method of producing a semiconductor dynamic sensor
DE4341662C2 (de) * 1992-12-08 1997-01-23 Murata Manufacturing Co Beschleunigungssensor
JPH06307955A (ja) * 1993-04-21 1994-11-04 Tokai Rika Co Ltd 圧力センサ用ダイヤフラム及びその製造方法
JP3385688B2 (ja) * 1993-12-13 2003-03-10 株式会社デンソー 半導体ヨーレートセンサおよびその製造方法
DE69432396T2 (de) * 1993-12-27 2004-03-04 Hitachi, Ltd. Beschleunigungsmessaufnehmer
JP3269274B2 (ja) * 1994-03-15 2002-03-25 株式会社デンソー 加速度センサ
JPH0874028A (ja) * 1994-09-01 1996-03-19 Matsushita Electric Ind Co Ltd 薄膜形成装置および薄膜形成方法
JP3435850B2 (ja) * 1994-10-28 2003-08-11 株式会社デンソー 半導体力学量センサ及びその製造方法
US6316796B1 (en) * 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
EP0762128B1 (de) * 1995-09-04 2000-05-17 Murata Manufacturing Co., Ltd. Beschleunigungsdetektionsvorrichtung
US5792954A (en) * 1996-09-30 1998-08-11 Texas Instruments Incorporated Condition responsive sensor
US6887732B2 (en) * 2001-05-07 2005-05-03 Applied Materials, Inc. Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS device
US20040035206A1 (en) * 2002-03-26 2004-02-26 Ward Paul A. Microelectromechanical sensors having reduced signal bias errors and methods of manufacturing the same
US20050172717A1 (en) * 2004-02-06 2005-08-11 General Electric Company Micromechanical device with thinned cantilever structure and related methods
US7124643B2 (en) * 2004-10-18 2006-10-24 Silverbrook Research Pty Ltd Pressure sensor with non-planar membrane
US7159467B2 (en) 2004-10-18 2007-01-09 Silverbrook Research Pty Ltd Pressure sensor with conductive ceramic membrane
US7121145B2 (en) * 2004-10-18 2006-10-17 Silverbrook Research Pty Ltd Capacitative pressure sensor
US7093494B2 (en) * 2004-10-18 2006-08-22 Silverbrook Research Pty Ltd Micro-electromechanical pressure sensor
US7089797B2 (en) * 2004-10-18 2006-08-15 Silverbrook Research Pty Ltd Temperature insensitive pressure sensor
US7089798B2 (en) * 2004-10-18 2006-08-15 Silverbrook Research Pty Ltd Pressure sensor with thin membrane
US7234357B2 (en) * 2004-10-18 2007-06-26 Silverbrook Research Pty Ltd Wafer bonded pressure sensor
US7143652B2 (en) * 2004-10-18 2006-12-05 Silverbrook Research Pty Ltd Pressure sensor for high acceleration environment
US7538401B2 (en) * 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US7628309B1 (en) 2005-05-03 2009-12-08 Rosemount Aerospace Inc. Transient liquid phase eutectic bonding
US20070013014A1 (en) * 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US9494477B2 (en) 2014-03-31 2016-11-15 Infineon Technologies Ag Dynamic pressure sensor
JP7127513B2 (ja) * 2018-11-30 2022-08-30 トヨタ自動車株式会社 センサシステムおよびロボットハンド

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4357834A (en) * 1980-09-03 1982-11-09 Hokushin Electric Works, Ltd. Displacement converter
CH642461A5 (fr) * 1981-07-02 1984-04-13 Centre Electron Horloger Accelerometre.
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
JPS5938621A (ja) * 1982-08-27 1984-03-02 Nissan Motor Co Ltd 振動分析装置
FI74350C (fi) * 1984-02-21 1988-01-11 Vaisala Oy Kapacitiv absoluttryckgivare.
FI71015C (fi) * 1984-02-21 1986-10-27 Vaisala Oy Temperaturoberoende kapacitiv tryckgivare
JPS6184537A (ja) * 1984-10-02 1986-04-30 Yokogawa Hokushin Electric Corp 容量式センサの製造方法
DE3727142C2 (de) * 1987-08-14 1994-02-24 Kernforschungsz Karlsruhe Verfahren zur Herstellung von Mikrosensoren mit integrierter Signalverarbeitung
FI78784C (fi) * 1988-01-18 1989-09-11 Vaisala Oy Tryckgivarkonstruktion och foerfarande foer framstaellning daerav.
US5012304A (en) * 1989-03-16 1991-04-30 Bell Communications Research, Inc. Semiconductor devices having strain-induced lateral confinement of charge carriers
US5048343A (en) * 1990-04-30 1991-09-17 Allied-Signal Inc. Temperature-compensated strain-gauge amplifier

Also Published As

Publication number Publication date
EP0501359A3 (en) 1994-05-18
EP0501359A2 (de) 1992-09-02
JPH04268725A (ja) 1992-09-24
EP0501359B1 (de) 1998-09-23
ATE171566T1 (de) 1998-10-15
US5285097A (en) 1994-02-08
DE69227050T2 (de) 1999-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee