SG54606A1 - Polishing composition - Google Patents
Polishing compositionInfo
- Publication number
- SG54606A1 SG54606A1 SG1997004210A SG1997004210A SG54606A1 SG 54606 A1 SG54606 A1 SG 54606A1 SG 1997004210 A SG1997004210 A SG 1997004210A SG 1997004210 A SG1997004210 A SG 1997004210A SG 54606 A1 SG54606 A1 SG 54606A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing composition
- polishing
- composition
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32561696A JPH10172935A (ja) | 1996-12-05 | 1996-12-05 | 研磨用組成物 |
JP32561496A JPH10172934A (ja) | 1996-12-05 | 1996-12-05 | 研磨用組成物 |
JP32561996A JPH10172937A (ja) | 1996-12-05 | 1996-12-05 | 研磨用組成物 |
JP32561896A JPH10172936A (ja) | 1996-12-05 | 1996-12-05 | 研磨用組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG54606A1 true SG54606A1 (en) | 1998-11-16 |
Family
ID=27480359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1997004210A SG54606A1 (en) | 1996-12-05 | 1997-12-01 | Polishing composition |
Country Status (6)
Country | Link |
---|---|
US (1) | US6027669A (de) |
EP (1) | EP0846741A1 (de) |
KR (1) | KR19980063805A (de) |
CN (4) | CN1185471A (de) |
SG (1) | SG54606A1 (de) |
TW (1) | TW373015B (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6338743B1 (en) * | 1997-04-17 | 2002-01-15 | Merck Patent Gesellschaft Mit Beschrankter Haftung | Buffer solutions for suspensions used in chemical-mechanical polishing |
US6149696A (en) * | 1997-11-06 | 2000-11-21 | Komag, Inc. | Colloidal silica slurry for NiP plated disk polishing |
JP4163785B2 (ja) | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
JP4113282B2 (ja) * | 1998-05-07 | 2008-07-09 | スピードファム株式会社 | 研磨組成物及びそれを用いたエッジポリッシング方法 |
JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
JP4163788B2 (ja) * | 1998-06-25 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
FR2781922B1 (fr) * | 1998-07-31 | 2001-11-23 | Clariant France Sa | Procede de polissage mecano-chimique d'une couche en un materiau a base de cuivre |
JP2000080350A (ja) | 1998-09-07 | 2000-03-21 | Speedfam-Ipec Co Ltd | 研磨用組成物及びそれによるポリッシング加工方法 |
US6447693B1 (en) * | 1998-10-21 | 2002-09-10 | W. R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces |
WO2000023534A1 (en) * | 1998-10-21 | 2000-04-27 | W.R. Grace & Co.-Conn. | Slurries of abrasive inorganic oxide particles and method for adjusting the abrasiveness of the particles |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
SG73683A1 (en) | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
KR100574259B1 (ko) * | 1999-03-31 | 2006-04-27 | 가부시끼가이샤 도꾸야마 | 연마제 및 연마 방법 |
TW486514B (en) | 1999-06-16 | 2002-05-11 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
US6595834B2 (en) | 1999-06-25 | 2003-07-22 | Corning Incorporated | Method of making <200nm light transmitting optical fluoride crystals for transmitting less than 200nm light |
JP3721497B2 (ja) | 1999-07-15 | 2005-11-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
CN1125861C (zh) * | 1999-07-16 | 2003-10-29 | 长兴化学工业股份有限公司 | 半导体加工用化学机械研磨组合物 |
US6159077A (en) * | 1999-07-30 | 2000-12-12 | Corning Incorporated | Colloidal silica polishing abrasive |
US6458289B1 (en) * | 1999-10-06 | 2002-10-01 | Agere Systems Guardian Corp. | CMP slurry for polishing semiconductor wafers and related methods |
US6436830B1 (en) | 1999-10-06 | 2002-08-20 | Agere Systems Guardian Corp. | CMP system for polishing semiconductor wafers and related method |
US7229927B1 (en) | 1999-11-23 | 2007-06-12 | Corning Incorporated | Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics |
JP3563017B2 (ja) | 2000-07-19 | 2004-09-08 | ロデール・ニッタ株式会社 | 研磨組成物、研磨組成物の製造方法及びポリシング方法 |
DE10060697B4 (de) | 2000-12-07 | 2005-10-06 | Siltronic Ag | Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens |
US6669536B2 (en) * | 2000-12-11 | 2003-12-30 | Corning Incorporated | Method of making optical fluoride laser crystal components |
US6612911B2 (en) | 2001-01-16 | 2003-09-02 | Cabot Microelectronics Corporation | Alkali metal-containing polishing system and method |
US6726534B1 (en) | 2001-03-01 | 2004-04-27 | Cabot Microelectronics Corporation | Preequilibrium polishing method and system |
US7582564B2 (en) | 2001-03-14 | 2009-09-01 | Applied Materials, Inc. | Process and composition for conductive material removal by electrochemical mechanical polishing |
JP3804009B2 (ja) * | 2001-10-01 | 2006-08-02 | 触媒化成工業株式会社 | 研磨用シリカ粒子分散液、その製造方法および研磨材 |
US6805812B2 (en) | 2001-10-11 | 2004-10-19 | Cabot Microelectronics Corporation | Phosphono compound-containing polishing composition and method of using same |
US6705926B2 (en) | 2001-10-24 | 2004-03-16 | Cabot Microelectronics Corporation | Boron-containing polishing system and method |
JP2003142435A (ja) | 2001-10-31 | 2003-05-16 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
KR101004525B1 (ko) * | 2002-08-19 | 2010-12-31 | 호야 가부시키가이샤 | 마스크 블랭크용 글래스 기판 제조 방법, 마스크 블랭크제조방법, 전사 마스크 제조 방법, 반도체 디바이스제조방법, 마스크 블랭크용 글래스 기판, 마스크 블랭크,및 전사 마스크 |
DE10239144A1 (de) * | 2002-08-27 | 2004-03-18 | Degussa Ag | Dispersion |
JP2004247428A (ja) * | 2003-02-12 | 2004-09-02 | Fujimi Inc | 研磨用組成物及びそれを用いる研磨方法 |
JP4202172B2 (ja) * | 2003-03-31 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US7390429B2 (en) * | 2003-06-06 | 2008-06-24 | Applied Materials, Inc. | Method and composition for electrochemical mechanical polishing processing |
JP4668528B2 (ja) * | 2003-09-05 | 2011-04-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20050087451A1 (en) * | 2003-10-24 | 2005-04-28 | Berman Michael J. | Abrasive electrolyte |
US20050109980A1 (en) * | 2003-11-25 | 2005-05-26 | Hongyu Wang | Polishing composition for CMP having abrasive particles |
JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
US20100009889A1 (en) * | 2004-04-20 | 2010-01-14 | Smith William L | Dry Delivery Hypochlorite |
JP4808394B2 (ja) * | 2004-10-29 | 2011-11-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20060249394A1 (en) * | 2005-05-05 | 2006-11-09 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
JP4955253B2 (ja) * | 2005-06-02 | 2012-06-20 | 日本化学工業株式会社 | デバイスウエハエッジ研磨用研磨組成物、その製造方法、及び研磨加工方法 |
US20070039926A1 (en) * | 2005-08-17 | 2007-02-22 | Cabot Microelectronics Corporation | Abrasive-free polishing system |
JP2007103514A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
WO2007047454A2 (en) * | 2005-10-14 | 2007-04-26 | Applied Materials, Inc. | Process and composition for electrochemical mechanical polishing |
US20070117497A1 (en) * | 2005-11-22 | 2007-05-24 | Cabot Microelectronics Corporation | Friction reducing aid for CMP |
CN101368070A (zh) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | 微晶玻璃加工用的纳米二氧化硅磨料抛光液 |
DE102008044646B4 (de) | 2008-08-27 | 2011-06-22 | Siltronic AG, 81737 | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009058436A1 (de) | 2009-12-16 | 2011-01-20 | Siltronic Ag | Verfahren zur beidseitigen Politur einer Halbleiterscheibe |
CN102101981B (zh) * | 2009-12-18 | 2014-08-20 | 安集微电子(上海)有限公司 | 一种用于介质材料平坦化的抛光液 |
JP5168387B2 (ja) * | 2011-06-08 | 2013-03-21 | 旭硝子株式会社 | 磁気記録媒体用ガラス基板の製造方法 |
CN102967632B (zh) * | 2012-11-30 | 2016-01-20 | 淄博包钢灵芝稀土高科技股份有限公司 | 用电导率指导抛光粉生产和产品质量控制的方法 |
CN105778775B (zh) * | 2014-12-23 | 2021-03-02 | 安集微电子(上海)有限公司 | 一种中性胶体二氧化硅的制备方法 |
CN111644989B (zh) * | 2020-07-01 | 2022-01-25 | 东莞市亚马电子有限公司 | 一种抛光盘用抛光材料及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SU457712A1 (ru) * | 1973-04-06 | 1975-01-25 | Предприятие П/Я Х-5594 | Состав дл полировани |
SU859406A1 (ru) * | 1979-12-20 | 1981-08-30 | Бийский Лакокрасочный Завод | Состав дл очистки лакокрасочных покрытий |
SU943264A1 (ru) * | 1980-09-25 | 1982-07-15 | Всесоюзный заочный машиностроительный институт | Состав дл шлифовани и полировани кристаллов |
US5352277A (en) * | 1988-12-12 | 1994-10-04 | E. I. Du Pont De Nemours & Company | Final polishing composition |
RU1781270C (ru) * | 1990-05-14 | 1992-12-15 | Калушское Опытное Производство Института Химии Поверхности Ан Усср | Состав дл химико-механического полировани кремниевых пластин |
ATE120433T1 (de) * | 1991-05-28 | 1995-04-15 | Nalco Chemical Co | Polierbreie aus silika mit geringem gehalt an natrium und an metallen. |
US5376222A (en) * | 1991-09-04 | 1994-12-27 | Fujitsu Limited | Polishing method for polycrystalline silicon |
US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
JPH06163490A (ja) * | 1992-11-19 | 1994-06-10 | Nippon Steel Corp | Siウエハの鏡面加工法 |
US5575837A (en) * | 1993-04-28 | 1996-11-19 | Fujimi Incorporated | Polishing composition |
JPH08107094A (ja) * | 1994-10-05 | 1996-04-23 | Toshiba Corp | 基板の洗浄方法 |
JPH08267356A (ja) * | 1995-04-04 | 1996-10-15 | Mitsubishi Materials Shilicon Corp | 二酸化シリコン膜用研磨剤および二酸化シリコン膜の研磨方法ならびに張り合わせ半導体基板の作製方法 |
-
1997
- 1997-12-01 SG SG1997004210A patent/SG54606A1/en unknown
- 1997-12-03 TW TW86118166A patent/TW373015B/zh active
- 1997-12-03 EP EP97309730A patent/EP0846741A1/de not_active Withdrawn
- 1997-12-04 KR KR1019970065977A patent/KR19980063805A/ko not_active Application Discontinuation
- 1997-12-05 CN CN97126031A patent/CN1185471A/zh active Pending
- 1997-12-05 US US08/985,909 patent/US6027669A/en not_active Expired - Lifetime
-
2001
- 2001-09-30 CN CN01141168A patent/CN1343752A/zh active Pending
- 2001-09-30 CN CN01141166A patent/CN1343750A/zh active Pending
- 2001-09-30 CN CN01141167A patent/CN1343751A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US6027669A (en) | 2000-02-22 |
EP0846741A1 (de) | 1998-06-10 |
CN1343752A (zh) | 2002-04-10 |
KR19980063805A (ko) | 1998-10-07 |
CN1185471A (zh) | 1998-06-24 |
CN1343750A (zh) | 2002-04-10 |
CN1343751A (zh) | 2002-04-10 |
TW373015B (en) | 1999-11-01 |
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