SG44754A1 - Circuit for driving a half-bridge - Google Patents

Circuit for driving a half-bridge

Info

Publication number
SG44754A1
SG44754A1 SG1996007024A SG1996007024A SG44754A1 SG 44754 A1 SG44754 A1 SG 44754A1 SG 1996007024 A SG1996007024 A SG 1996007024A SG 1996007024 A SG1996007024 A SG 1996007024A SG 44754 A1 SG44754 A1 SG 44754A1
Authority
SG
Singapore
Prior art keywords
bridge
driving
circuit
Prior art date
Application number
SG1996007024A
Other languages
English (en)
Inventor
Anand Jaanswamy
Rajsekhar Jayaraman
Ihor Wacyk
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Publication of SG44754A1 publication Critical patent/SG44754A1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/31—Indexing scheme relating to amplifiers the switching power stage comprising circuitry for emulating the behaviour of a bootstrap diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Electronic Switches (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
SG1996007024A 1993-05-07 1994-05-04 Circuit for driving a half-bridge SG44754A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6017693A 1993-05-07 1993-05-07
US08/155,053 US5373435A (en) 1993-05-07 1993-11-19 High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator

Publications (1)

Publication Number Publication Date
SG44754A1 true SG44754A1 (en) 1997-12-19

Family

ID=26739651

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996007024A SG44754A1 (en) 1993-05-07 1994-05-04 Circuit for driving a half-bridge

Country Status (11)

Country Link
US (1) US5373435A (de)
EP (1) EP0649579B1 (de)
JP (1) JPH07508873A (de)
KR (1) KR100341702B1 (de)
CN (1) CN1043106C (de)
CA (1) CA2139229A1 (de)
DE (1) DE69412414T2 (de)
ES (1) ES2122266T3 (de)
SG (1) SG44754A1 (de)
TW (1) TW306093B (de)
WO (1) WO1994027370A1 (de)

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US5502632A (en) * 1993-05-07 1996-03-26 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
US5666280A (en) * 1993-05-07 1997-09-09 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode
US5572096A (en) * 1994-05-27 1996-11-05 Sgs-Thomson Microelectronics, Inc. Method and circuit for clamping the recirculation current in stator windings
JP2896342B2 (ja) * 1995-05-04 1999-05-31 インターナショナル・レクチファイヤー・コーポレーション 半波ブリッジ構成における複数のパワートランジスタを駆動し、かつ出力ノードの過度の負の振動を許容する方法及び回路、並びに上記回路を組み込む集積回路
US5502412A (en) * 1995-05-04 1996-03-26 International Rectifier Corporation Method and circuit for driving power transistors in a half bridge configuration from control signals referenced to any potential between the line voltage and the line voltage return and integrated circuit incorporating the circuit
EP0743752B1 (de) * 1995-05-17 2004-07-28 STMicroelectronics S.r.l. Laden eines Bootstrap-Kondensators mittels eines lateralen DMOS-Transistors
DE69502093T2 (de) * 1995-06-30 1998-10-08 Sgs Thomson Microelectronics Versorgungsspannungsregler für Bootstrapleitung ohne Filterkondensator
US5680017A (en) * 1996-05-03 1997-10-21 Philips Electronics North America Corporation Driving scheme for minimizing ignition flash
US5742134A (en) * 1996-05-03 1998-04-21 Philips Electronics North America Corp. Inverter driving scheme
US5696431A (en) * 1996-05-03 1997-12-09 Philips Electronics North America Corporation Inverter driving scheme for capacitive mode protection
EP0887931A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Schutzschaltung zur Steuerung der Gatterspannung eines Hochspannungs-LDMOS-Transistors
EP0887932A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Steuerung der Körperspannung eines Hochspannungs-LDMOS-Transistors
EP0887933A1 (de) * 1997-06-24 1998-12-30 STMicroelectronics S.r.l. Schaltung zum Abschalten eines LDMOS-Transistors in Anwesenheit von einem Gegenstrom
US5903142A (en) * 1997-06-27 1999-05-11 Cypress Semiconductor Corp. Low distortion level shifter
EP0978143B1 (de) * 1997-10-28 2010-07-14 Nxp B.V. Halbleiterbauelement mit einem halbbrücken-schaltkreis
DE19900153A1 (de) * 1998-01-05 1999-07-15 Int Rectifier Corp Integrierte Gate-Treiberschaltung
GB9907021D0 (en) * 1999-03-27 1999-05-19 Koninkl Philips Electronics Nv Switch circuit and semiconductor switch for battery-powered equipment
DE19917364A1 (de) * 1999-04-16 2000-10-19 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Schaltungsanordnung mit Halbbrücke
DE19929728B4 (de) * 1999-06-29 2015-08-06 Infineon Technologies Ag Schaltungsanordnung zur Ansteuerung eines Motors
JP4397602B2 (ja) 2002-05-24 2010-01-13 三菱電機株式会社 半導体装置
US6643145B1 (en) * 2002-07-26 2003-11-04 Intersil Americas Inc. High resolution digital diode emulator for DC-DC converters
US6812782B2 (en) * 2002-10-25 2004-11-02 Texas Instruments Incorporated Switch mode converter that allows 100% duty cycle on gate driver
KR100894320B1 (ko) 2003-03-24 2009-04-24 페어차일드코리아반도체 주식회사 고전압 집적 회로에 의해 게이트가 구동되는 스위칭소자를 포함하는 인버터 회로
US7301370B1 (en) * 2003-05-22 2007-11-27 Cypress Semiconductor Corporation High-speed differential logic to CMOS translator architecture with low data-dependent jitter and duty cycle distortion
DE60335180D1 (de) * 2003-07-04 2011-01-13 Dialog Semiconductor Gmbh Hochspannungschnittstelle und Steuerschaltung dafür
US6781422B1 (en) * 2003-09-17 2004-08-24 System General Corp. Capacitive high-side switch driver for a power converter
US7215189B2 (en) * 2003-11-12 2007-05-08 International Rectifier Corporation Bootstrap diode emulator with dynamic back-gate biasing
US7205751B2 (en) * 2004-03-12 2007-04-17 Intersil America's Inc. Enable and disable of diode emulation in a DC/DC converter
JP4610941B2 (ja) * 2004-06-18 2011-01-12 三菱電機株式会社 半導体装置
US7106105B2 (en) * 2004-07-21 2006-09-12 Fairchild Semiconductor Corporation High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator
US20060044051A1 (en) * 2004-08-24 2006-03-02 International Rectifier Corporation Bootstrap diode emulator with dynamic back-gate biasing and short-circuit protection
US20070146020A1 (en) * 2005-11-29 2007-06-28 Advanced Analogic Technologies, Inc High Frequency Power MESFET Gate Drive Circuits
US7667491B2 (en) * 2006-02-24 2010-02-23 Freescale Semiconductor, Inc. Low voltage output buffer and method for buffering digital output data
US7456658B2 (en) * 2006-04-07 2008-11-25 International Rectifier Corporation Circuit to optimize charging of bootstrap capacitor with bootstrap diode emulator
DE102006034679A1 (de) * 2006-07-24 2008-01-31 Infineon Technologies Ag Halbleitermodul mit Leistungshalbleiterchip und passiven Bauelement sowie Verfahren zur Herstellung desselben
US7889002B2 (en) * 2006-10-20 2011-02-15 Nxp B.V. Power amplifier
US20080290841A1 (en) * 2007-05-23 2008-11-27 Richtek Technology Corporation Charging Circuit for Bootstrap Capacitor and Integrated Driver Circuit Using Same
FR2947976B1 (fr) * 2009-07-07 2011-07-22 Sagem Defense Securite Circuit d'excitation de capteurs a courant continu
US8154334B2 (en) * 2009-07-21 2012-04-10 Intersil America Inc. System and method for pre-charging a bootstrap capacitor in a switching regulator with high pre-bias voltage
JP5488256B2 (ja) * 2010-06-25 2014-05-14 三菱電機株式会社 電力用半導体装置
JP5511594B2 (ja) 2010-08-31 2014-06-04 スパンション エルエルシー 出力スイッチング回路
JP5994939B2 (ja) 2013-06-14 2016-09-21 富士電機株式会社 半導体装置
CN104300784B (zh) * 2013-07-19 2017-06-09 力智电子股份有限公司 电源转换器的驱动器及其驱动控制方法
TWI509964B (zh) * 2013-07-19 2015-11-21 Upi Semiconductor Corp 電源轉換器的驅動器及其驅動控制方法
JP6228428B2 (ja) * 2013-10-30 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
US9667245B2 (en) 2014-10-10 2017-05-30 Efficient Power Conversion Corporation High voltage zero QRR bootstrap supply
US10629587B2 (en) * 2015-04-30 2020-04-21 Mitsubishi Electric Corporation Protection circuit and protection circuit system
ITUB20155707A1 (it) 2015-11-18 2017-05-18 St Microelectronics Srl Circuito di pilotaggio, circuito integrato e dispositivo corrispondenti
JP6646490B2 (ja) * 2016-03-23 2020-02-14 キヤノン株式会社 電源回路及び画像形成装置
JP6839280B2 (ja) * 2016-12-01 2021-03-03 エフィシエント パワー コンヴァーション コーポレーション ＧａＮトランジスタに基づく電力コンバータのためのブートストラップキャパシタ過電圧管理回路
DE102017117031A1 (de) * 2017-07-27 2019-01-31 Dr. Ing. H.C. F. Porsche Aktiengesellschaft Nachladeschaltung für modulare Multilevelkonverter
JP2018022922A (ja) * 2017-10-13 2018-02-08 ルネサスエレクトロニクス株式会社 半導体装置
US10536070B1 (en) 2018-08-01 2020-01-14 Infineon Technologies Ag Driver for switching gallium nitride (GaN) devices
US10924106B2 (en) * 2019-01-02 2021-02-16 General Electric Company Miller transition control gate drive circuit
DE102019200965A1 (de) * 2019-01-25 2020-07-30 Danfoss Silicon Power Gmbh Leistungsmodul, das eine aktive miller-clamp-funktion aufweist
JP7300968B2 (ja) * 2019-11-14 2023-06-30 三菱電機株式会社 半導体装置
JP7388317B2 (ja) * 2020-08-27 2023-11-29 三菱電機株式会社 駆動回路およびインバータ装置
CN114268219B (zh) * 2021-12-20 2023-09-12 中国电子科技集团公司第五十八研究所 一种驱动高边nmos管的自举电路
US20230387796A1 (en) * 2022-05-24 2023-11-30 Psemi Corporation Charging Circuit for Bootstrap Capacitors

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Also Published As

Publication number Publication date
JPH07508873A (ja) 1995-09-28
DE69412414T2 (de) 1999-03-11
EP0649579B1 (de) 1998-08-12
ES2122266T3 (es) 1998-12-16
DE69412414D1 (de) 1998-09-17
KR100341702B1 (ko) 2002-11-13
WO1994027370A1 (en) 1994-11-24
CA2139229A1 (en) 1994-11-24
US5373435A (en) 1994-12-13
KR950702759A (ko) 1995-07-29
CN1043106C (zh) 1999-04-21
CN1109699A (zh) 1995-10-04
EP0649579A1 (de) 1995-04-26
TW306093B (de) 1997-05-21

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